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Wyświetlanie 1-10 z 19
Tytuł:
Znaki i symbole geologiczne - moja pasja
Autorzy:
Werner, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2063384.pdf
Data publikacji:
2004
Wydawca:
Państwowy Instytut Geologiczny – Państwowy Instytut Badawczy
Tematy:
Państwowy Instytut Geologiczny
historia
znaki graficzne
prace geologiczne
Polish Geological Institute
history
graphics
geological works
Źródło:
Biuletyn Państwowego Instytutu Geologicznego; 2004, 410; 69-72
0867-6143
Pojawia się w:
Biuletyn Państwowego Instytutu Geologicznego
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Present status and prospects of research in SINS on the modification of surface properties by pulsed plasma streams
Autorzy:
Langner, J.
Piekoszewski, J.
Stanisławski, J.
Werner, Z.
Powiązania:
https://bibliotekanauki.pl/articles/146758.pdf
Data publikacji:
2000
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
IONOTRON plasma injector
pulsed plasma processing
surface modification
Opis:
The paper presents examples of the most important results obtained in SINS during the last decade, interesting from the point of view of industrial applications. It also indicates some of the most prospective directions in research on modification of the surface properties of materials by means of pulsed plasma streams.
Źródło:
Nukleonika; 2000, 45, 3; 193-197
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An apparatus for sequential pulsed plasma beam treatment in combination with Arc PVD deposition
Autorzy:
Stanisławski, J.
Piekoszewski, J.
Richter, E.
Werner, Z.
Powiązania:
https://bibliotekanauki.pl/articles/147034.pdf
Data publikacji:
2002
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
Arc-PVD
interlayer
pulse plasma treatment
Opis:
A hybrid type of apparatus is described which enables one to form a thin multi-layer film on the surface of any kind of solid substrate. In one process, the surface is treated with a high intensity pulse plasma beam which introduces the chosen kind of atoms into the near-surface layer of the substrate. In the second process, following the first without breaking the vacuum, the coating is formed by arc PVD (physical vapour deposition) process. Two examples of coatings formed on metallic and ceramic substrates are presented.
Źródło:
Nukleonika; 2002, 47, 3; 119-122
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes of tribological properties of Inconel 600 after ion implantation process
Autorzy:
Barlak, M.
Chmielewski, M.
Werner, Z.
Pietrzak, K.
Powiązania:
https://bibliotekanauki.pl/articles/201897.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
foil bearings
ion implantation
Inconel 600
friction coefficient
łożyska z folii
implantacja jonów
współczynnik tarcia
Opis:
Commercial Inconel 600 nickel-chromium alloy was implanted with nitrogen, titanium, chromium, copper with tin (as bronze components) and yttrium ions to doses ranging from 1.6e17 to 3.5e17 cm−2. The aim of this research was to investigate the properties of the modified alloy in the context of its application in foil bearings. The virgin and the treated samples were tribologically tested and examined by Scanning Electron Microscopy, Glow Discharge Mass Spectrometry and Energy Dispersive Spectroscopy. The technological studies were preceded by modelling of concentration values of the introduced elements. The results obtained with the use of ion implantation are discussed. There are two advantages which should be highlighted: good agreement in modelling and experimental results of depth profiles of implanted ions, wear resistance improvement of Inconel 600 surface by implantation of copper and tin ions. The tribological tests indicate that abrasion and corrosion are the predominant mechanisms of surface wear.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 4; 827-833
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal evolution of solid targets irradiated by pulsed plasma beams
Autorzy:
Szymczyk, W.
Piekoszewski, J.
Werner, Z.
Szyszko, W.
Powiązania:
https://bibliotekanauki.pl/articles/147099.pdf
Data publikacji:
2002
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
computer simulation
heat flow
thermal evolution
Opis:
Thermal evolution of various targets irradiated with high intensity pulsed ion or plasma beams was determined by computer simulation i.e. by solving numerically one dimensional heat flow equation. The calculations were carried out using the adopted ETLIT computer code (Energy Transport in Laser Irradiated Targets) based on Finite Element Method. The surface temperature, melt depth and liquid duration were computed as a function of pulse energy density, pulse duration, melting temperature and thermal diffusivity of a given material. In particular, some examples are shown for such materials as: Cu, Al, Zn, Fe, Ti, Mo, W, and Al2O3. Various practical aspects of the obtained results are discussed, with a special attention given to less or no intuitively predictable dependencies.
Źródło:
Nukleonika; 2002, 47, 4; 163-166
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion implantation followed by laser/pulsed plasma/ion beam annealing : a new approach to fabrication of superconducting MgB2 thin films
Autorzy:
Piekoszewski, J.
Werner, Z.
Barlak, M.
Kolitsch, A.
Szymczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/146817.pdf
Data publikacji:
2008
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
MgB2
superconducting films
pulsed plasma annealing
Opis:
The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.
Źródło:
Nukleonika; 2008, 53, 1; 7-10
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
Autorzy:
Ratajczak, R.
Werner, Z.
Barlak, M.
Pochrybniak, C.
Stonert, A.
Zhao, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1402209.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 845-848
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superconductivity of $MgB_2$ Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate
Autorzy:
Trybuła, Z.
Kempiński, W.
Łoś, Sz.
Kaszyńska, K.
Trybuła, M.
Piekoszewski, J.
Werner, Z.
Barlak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1536977.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.-b
74.78.-w
Opis:
The results of investigation of the $MgB_2$ layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%$H_2$ gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous $MgB_2$ layer and the resistivity for all samples fall down to zero below $T_{c}$. The transition temperature $T_{c}$ becomes higher with increasing annealing temperature: $T_{c}$=18 K (for annealing at $T_{A}$=673 K), $T_{c}$=20 K (for annealing at $T_{A}$=773 K), and $T_{c}$=27 K (for annealing at $T_{A}$=873 K).
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 323-325
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Implantation and Transient Melting: A New Approach to Formation of Superconducting MgB$\text{}_{2}$ Phases
Autorzy:
Piekoszewski, J.
Kempiński, W.
Stankowski, J.
Prokert, F.
Richter, E.
Stanisławski, J.
Werner, Z.
Szymczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/2041609.pdf
Data publikacji:
2004-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.-b
74.78.-w
Opis:
An attempt to synthesize superconducting MgB$\text{}_{2}$ inter-metallic compound from the liquid state is presented. The process consists of two steps. In the first one, boron ions are implanted into a magnesium substrate. In the second one, the near-surface region of such system is melted by short, intense hydrogen plasma pulses without necessity of annealing in Mg vapor. A magnetically modulated microwave absorption method was used to detect superconducting regions in the obtained MgB$\text{}_{2}$ layer. Percolation between nano-regions (islands) of MgB$\text{}_{2}$ has not been observed. However, a superconducting state of the insulated islands has been experimentally proven with transition temperatures T$\text{}_{C}$ as high as 31 K.
Źródło:
Acta Physica Polonica A; 2004, 106, 6; 861-868
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
Autorzy:
Werner, Z.
Pochrybniak, C.
Barlak, M.
Piekoszewski, J.
Korman, A.
Heller, R.
Szymczyk, W.
Bocheńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/147018.pdf
Data publikacji:
2011
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
dilute magnetic semiconductors (DMS)
Mn-implanted Si
ion beam induced epitaxial crystallization
Opis:
Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
Źródło:
Nukleonika; 2011, 56, 1; 5-8
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 19

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