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Tytuł:
Temperature-dependence of cathodoluminescence of zinc oxide monolayers obtained by atomic layer deposition
Autorzy:
Witkowski, B S
Wachnicki, L
Nowakowski, P
Suchocki, A
Godlewski, M
Powiązania:
https://bibliotekanauki.pl/articles/173941.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
zinc oxide
cathodoluminescence
profiling
temperature-dependence
localization
Opis:
We performed cathodoluminescence (CL) investigations of zinc oxide monolayers obtained by atomic layer deposition. Layers of different thickness were deposited on commercial GaN/sapphire templates. Scanning electron microscopy (SEM) system equipped with CL allows direct comparison of SEM images and CL maps, taken from exactly the same areas of samples. In addition to SEM and CL images, CL profiling was performed by collecting the CL spectra at different accelerating voltages. The CL profiling allows to distinguish the emissions from a surface and volume of samples. An inter-link between samples microstructure and emission properties is investigated. Shifts of emission bands, associated by us with the localization effects, are observed. CL investigations are supported by photoluminescence (PL) measurements, which are characterized by a higher spectral resolution. PL investigations allow determination of the origin of emission bands.
Źródło:
Optica Applicata; 2013, 43, 1; 187-194
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
Autorzy:
Witkowski, B.
Wachnicki, Ł.
Jakieła, R.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492546.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
77.55.hf
68.37.Hk
61.72.Ff
Opis:
Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of ZnO Nanorods Grown by the Ultra-Fast and Low Temperature Hydrothermal Process
Autorzy:
Witkowski, B.
Ivanov, V.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185890.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
61.46.+w
81.10.Dn
77.84.Bw
Opis:
The results of photoluminescence investigations of zinc oxide nanorods are reported. These nanorods grown on undoped silicon substrates were obtained by low temperature and ultra-fast version of a microwave-assisted hydrothermal method. The photoluminescence investigations show very high quality of the obtained material. From photoluminescence studies we conclude the lack of carrier localization effects. The photoluminescence is dominated by band gap edge emission of bound excitonic (donor bound excitons) origin. Thus, the photoluminescence quenching observed at increased temperatures is associated with thermal ionization of shallow donors. From photoluminescence analysis (changes of photoluminescence line width) a strength of exciton-acoustic phonon coupling is evaluated.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1199-1201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
Autorzy:
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Figge, S.
Hommel, D.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1399138.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Kk
61.05.cp
81.05.Dz
Opis:
An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 869-872
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
Autorzy:
Wachnicki, Ł.
Dużyńska, A.
Domagala, J.
Witkowski, B.
Krajewski, T.
Przeździecka, E.
Guziewicz, M.
Wierzbicka, A.
Kopalko, K.
Figge, S.
Hommel, D.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492723.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Aa
61.05.cp
81.05.Dz
Opis:
Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
Autorzy:
Wachnicki, Ł.
Witkowski, B.
Gierałtowska, S.
Kopalko, K.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492916.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Bc
82.47.Rs
68.55.-a
81.15.Aa
Opis:
Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 905-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Synthesis Pressure on Properties of Eu-Doped ZnO Nanopowders Prepared by Microwave Hydrothermal Method
Autorzy:
Rosowska, J.
Kaszewski, J.
Witkowski, B.
Wachnicki, Ł.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185714.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
81.07.Wx
81.20.Ka
78.60.Hk
Opis:
In the current research, europium doped ZnO nanopowders prepared by a microwave hydrothermal method are investigated. The effects of synthesis pressure on the morphologies, crystal structures, and optical properties of Eu-doped ZnO were analyzed by scanning electron microscopy, X-ray diffraction, cathodo- and photoluminescence. From our investigations it can be concluded that the synthesis pressure strongly influences the surface morphology. With the increase of the synthesis pressure from 2 MPa to 10 MPa significant changes can be observed. An increase of the mean crystallites sizes and change of the intensity ratio between the near band edge and defect related deep level emission band of ZnO were observed.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1205-1208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
Autorzy:
Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1400467.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p
Opis:
The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
Autorzy:
Łukasiewicz, M.
Wójcik-Głodowska, A.
Guziewicz, E.
Jakieła, R.
Krajewski, T.
Łusakowska, E.
Paszkowicz, W.
Minikayev, R.
Kiecana, M.
Sawicki, M.
Godlewski, M.
Wachnicki, Ł.
Szczepanik, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811957.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1235-1240
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Wachnicki, Ł.
Kopalko, K.
Gierałtowska, S.
Wittlin, A.
Jaworski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492571.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
Autorzy:
Łuka, G.
Krajewski, T.
Szczerbakow, A.
Łusakowska, E.
Kopalko, K.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Fidelus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811956.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
73.40.Lq
81.05.Lg
Opis:
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1229-1234
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Król, K.
Kwietniewski, N.
Gierałtowska, S.
Wachnicki, Ł.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1033217.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Pr
77.84.Bw
77.55.dj
Opis:
The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 329-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:
Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Si/ZnO nanorods with Ag nanoparticles/AZO heterostructures in PV applications
Autorzy:
Gwóźdź, K.
Płaczek-Popko, E.
Gumienny, Z.
Zielony, E.
Pietruszka, R.
Witkowski, B. S.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Chang, L. B.
Powiązania:
https://bibliotekanauki.pl/articles/201432.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
solar cells
ZnO
Si
heterojunction
nanorods
nanoparticles
ogniwa słoneczne
nanopręty
nanocząstki
Opis:
Our studies focus on test structures for photovoltaic applications based on zinc oxide nanorods grown using a low-temperature hydrothermal method on a p-type silicon substrate. The nanorods were covered with silver nanoparticles of two diameters – 20–30 nm and 50–60 nm – using a sputtering method. Scanning electron microscopy (SEM) micrographs showed that the deposited nanoparticles had the same diameters. The densities of the nanorods were obtained by means of atomic force microscope (AFM) images. SEM images and Raman spectroscopy confirmed the hexagonal wurtzite structure of the nanorods. Photoluminescence measurements proved the good quality of the samples. Afterwards an atomic layer deposition (ALD) method was used to grow ZnO:Al (AZO) layer on top of the nanorods as a transparent electrode and ohmic Au contacts were deposited onto the silicon substrate. For the solar cells prepared in that manner the current-voltage (I-V) characteristics before and after the illumination were measured and their basic performance parameters were determined. It was found that the spectral characteristics of a quantum efficiency exhibit an increase for short wavelengths and this behavior has been linked with the plasmonic effect.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 529-533
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
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