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Tytuł:
MOCVD Growth of InP-Related Materials Using TEA and TBP
Autorzy:
Czub, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1933730.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ce
Opis:
High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, InGaAlP have been grown by low-pressure metalorganic chemical vapor deposition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm $\text{}^{2}$/(V s) for n = 1.5 × 10$\text{}^{15}$ /cm$\text{}^{-3}$ and a thickness of 2 μm. Comparable photoluminescence parameters of InGaP between layers grown with TBP and PH$\text{}_{3}$ were achieved, but for InGaAlP (TBP) photoluminescence intensity was significantly lower than for InGaAlP (PH$\text{}_{3}$). The promising results allow one to apply of ΤΒA and TBP for developing of device structures.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 695-698
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport of Photoexcited Electron-Hole Plasma in GaN/AlGaN Quantum Well
Autorzy:
Korona, K.
Caban, P.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1791352.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
72.40.+w
Opis:
We report spatially resolved photocurrent measurements showing transport of excitation on long distances in plane of a 6 nm GaN/$Al_{0.1}Ga_{0.9}N$ quantum well. The strong field present in nitrides (due to large spontaneous and piezoelectric polarizations) leads to lower recombination rates of electrons and holes, so in the case of electron-hole pairs excited by light, relatively long-lived electron-hole plasma could be generated. In the case of the investigated quantum well, lifetime of few μs was expected. The thermal measurements showed that barriers were low enough, so all excited carriers could reach the electrode (thermal activation energy of 0.11 eV was found). The diffusion length for unbiased structure was about 40 μm. It was observed that the charge transport could be clearly accelerated by bias. In the biased quantum well, the transport range was of the order of 100 μm under both positive and negative bias. The reported effect of long transport range is very important for electronic devices made on the GaN/AlGaN structures.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 927-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rentgenowska metoda określania profilu składu chemicznego w heterostrukturach GaN/InGaN otrzymywanych metodą MOCVD na podłożu szafirowym
HRXRD investigation of the chemical composition profile in the GaN/InGaN heterostructures grown by the MOCVD method on a sapphire substrate
Autorzy:
Wójcik, M.
Strupiński, W.
Rudziński, M.
Gaca, J.
Powiązania:
https://bibliotekanauki.pl/articles/192140.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
HRXRD
heterostruktura
interfejs
GaN
InGaN
heterostructure
interface
Opis:
Opracowano procedurę graficznego modelowania profilu składu chemicznego w obszarze interfejsu dla związków AIIIN, która w znacznym stopniu ułatwia i skraca proces tworzenia modelu kryształu wielowarstwowego InGaN/GaN. Procedurę tę wykorzystano w trójstopniowej metodzie modelowania heterostruktur InGaN/GaN i z powodzeniem zastosowano do zbadania realnej struktury systemów epitaksjalnych wytworzonych w ITME.
A procedure for forming a graphical chemical composition profile in the interface region was developed for AIIIN compounds. It greatly simplifies and shortens the process of creating the model of InGaN/GaN heterostructures. The three-step-method was successfully worked out and used for modeling the InGaN/GaN structure, and finally applied to the investigation of the real structure of epitaxial systems produced at ITME by means of the MOCVD technique.
Źródło:
Materiały Elektroniczne; 2012, T. 40, nr 4, 4; 48-57
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microscopic Investigation of SiC Epitaxial Layers οn On-Axis 4H-SiC Substrates Using Kelvin Probe Force Microscopy
Autorzy:
Kościewicz, K.
Bożek, R.
Strupiński, W.
Olszyna, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807654.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.bg
81.15.-z
34.20.-b
61.05.J-
Opis:
We report on Kelvin probe force microscopy and electron backscatter diffraction measurements of 3C-SiC epitaxial layers grown on exactly oriented Si-face 4H-SiC (0001) substrates in a horizontal hot-wall chemical vapor deposition reactor, in the temperature range from 1150°C to 1620°C, under $H_{2}$ or $H_{2}$ $+SiH_{4}$ atmosphere. The investigated layers were doped with nitrogen (for n-type) and aluminium (for p-type). The electron backscatter diffraction analysis revealed structure of polytype 3C blocks with a relative rotation of 60 and/or 120°. The Kelvin probe force microscopy measurements revealed cubic substructure as a equilateral triangle objects contrast which is characteristic of 3C silicon carbide polytype. The surface potential contrast was found to be dependent on the type and concentration of doping, which could be explained in terms of the impurities accumulation at block boundaries.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-69-S-71
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
Autorzy:
Binder, J.
Stępniewski, R.
Strupiński, W.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033795.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
78.67.Wj
73.30.+y
Opis:
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 360-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CVD Growth of Graphene Stacks on 4H-SiC (0001) Surface - X-ray Diffraction and Raman Spectroscopy Study
Autorzy:
Tokarczyk, M.
Kowalski, G.
Grodecki, K.
Urban, J.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399073.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.Gh
61.72.Dd
63.22.Rc
Opis:
Features associated with short and prolonged growth time in the chemical vapor deposition process of growth of graphene stacks on SiC (0001) substrate are reported. In particular general bimodal (as far as $d_{002}$ interlayer spacing is concerned) distribution of graphene species across the surface of the samples is observed. It consists of thin few layer graphene coverage of most of the sample surface accompanied by thick graphite-like island distribution. It points to the two independent channels of graphene stacks growth with two characteristic growth rates.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 768-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Pressure on the Roughness of InGaP Layers
Autorzy:
Dumiszewska, E.
Knyps, P.
Wesolowski, M.
Teodorczyk, M.
Strupinski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1492628.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
78.30.Fs
73.61.Ey
81.10.-h
Opis:
Today, the technology of typical silicon-solar cells is fully developed and mature. In spite of its continuous improvements, the record efficiencies of 25.0% are approaching theoretical solar conversion limits of around 33.7%. Values much beyond this limit are likely to be achieved using III-V semiconductor compounds, electrical and optical properties are more suitable for solar energy conversion. They are the most promising candidates for realizing solar cells, which can achieve efficiencies of 50% and more. In this paper we studied the influence of pressure in the reactor chamber on the roughness of an InGaP "nucleation layer" grown on Ge. The growth of the layers was performed in a metalorganic vapour phase epitaxy reactor AIX 200/4. The source gases were trimethylgallium, trimethylindium and $AsH_3$. The rate of pressure in the reactor was raised from 100 mbar to 400 mbar by 50 mbar. The InGaP layers with the lowest roughness were achieved at the pressure of 400 mbar. The layers were characterized by very low roughness (RMS < 0.3) measured by atomic force microscopy. The quality of the surface was perfect enough to be applied in a solar cell structure.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-050-A-051
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Transformations in Ion Bombarded InGaAsP
Autorzy:
Ratajczak, R.
Turos, A.
Stonert, A.
Nowicki, L.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1504046.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 136-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
Autorzy:
Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811916.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up
Opis:
Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1067-1072
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optymalizacja wytwarzania pierwszego złącza trójzłączowych ogniw słonecznych na bazie związków InGaP/InGaAs/Ge
Optimization of the technology of manufacturing the first junction of triple junction solar cells based on InGaP/InGaAs/Ge compounds
Autorzy:
Dumiszewska, E.
Knyps, P.
Teodorczyk, M.
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/192120.pdf
Data publikacji:
2011
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
ogniwo słoneczne
MOCVD
złącze InGaP/ Ge
solar cells
InGaP/Ge junction
Opis:
W pracy przedstawiono proces wytwarzania pierwszego złącza trójzłączowych ogniw słonecznych opartych o związki AIII-BV z wykorzystaniem technik osadzania MOCVD. Zaprezentowano także wstępne wyniki pomiarów elektrooptycznych pojedynczego złącza struktury Ge/InGaP:Si wykonanego w Instytucie Technologii Materiałów Elektronicznych. Złącze to powstało w wyniku dyfuzji atomów fosforu z warstwy InGaP. Wszystkie prace technologiczne zostały przeprowadzone w ITME.
This work has been devoted to presenting the process of manufacturing the first junction of triple junction solar cells based on AIII-BV compounds using MOCVD deposition techniques. Moreover, preliminary results of electro-optical measurements performed on a single junction of a Ge/InGaP:Si structure produced in the Institute of Electronic Materials Technology have been introduced. This junction has been created as a result of the diffusion of phosphorus atoms from an InGaP layer. All technological processes have been carried out in ITME.
Źródło:
Materiały Elektroniczne; 2011, T. 39, nr 3, 3; 10-14
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanodruty InP do zastosowań w fotowoltaice
InP nanowires for photovoltaic applications
Autorzy:
Dumiszewska, E.
Grodecki, K.
Krajewska, A.
Jóźwik, I.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/192364.pdf
Data publikacji:
2015
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
epitaksja
nanodruty
InP
ogniwa słoneczne
epitaxy
nanowiwires
solar cell
Opis:
W pracy zaprezentowano technologię wytwarzania nanodrutów InP na podłożach InP o orientacji (100) oraz (111)B oraz nanodrutów GaAs na podłożach GaAs o orientacji (100) i (111). Nanodruty zostały wykonane za pomocą metody Epitaksji z Fazy Gazowej z Użyciem Związków Metaloorganicznych (MOVPE). Jako katalizator wzrostu wykorzystano nanocząstki złota o średnicy ~ 30 nm. Wszystkie prace zostały wykonane w zakładzie Epitaksji i Charakteryzacji Związków Półprzewodnikowych ITME.
In this work the production methods of InP nanowires on InP (100) and (111)B substrates and GaAs nanowires on (100) and (100) substrates are presented. The nanowires were grown by Metalorganic Vapor Phase Epitaxy (MOVPE). Gold nanoparticles having a diameter of around 30 nm were used as a growth catalyst. All growth processes were carried out in the Department of Epitaxy and Characterization of ITME.
Źródło:
Materiały Elektroniczne; 2015, T. 43, nr 4, 4; 4-9
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of CVD graphene grown on copper foil and PVD copper
Porównanie własności grafenu otrzymanego metodą CVD na folii miedzianej oraz warstwie PVD miedzi
Autorzy:
Pasternak, I.
Grodecki, K.
Piątkowska, A.
Ciuk, T.
Caban, P.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/192272.pdf
Data publikacji:
2013
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
graphene on copper foils
PVD copper films
grain boundaries
Raman spectroscopy
grafen na folii miedzianej
warstwy PVD miedzi
granice ziaren
spektroskopia ramanowska
Opis:
Graphene synthesis by the CVD method performed on the surface of copper is one of the most promising techniques for producing graphene for low cost and large scale applications. Currently, the most commonly used Cu substrate for graphene growth is foil, however, there is still a need to find new substrates and improve the quality of graphene layers. Sputtered Cu films on insulating substrates are considered as an alternative. Here we show the properties of graphene grown by the CVD method on thin copper foil and PVD copper films on Si/SiO2 substrates. We compare data on the properties of graphene films transferred from different copper substrates onto SiO2/Si substrates. We note that graphene grown on sputtered Cu films creates a multilayer form on the boundaries which can be identified on micro-Raman maps and in SEM images.
Wytwarzanie grafenu metodą CVD na podłożach miedzianych jest jedną z najbardziej perspektywicznych metod otrzymywania grafenu ze względu na niski koszt podłoża oraz szerokie możliwości zastosowania w przemyśle. Obecnie najczęściej stosowanym do wzrostu grafenu podłożem miedzianym jest folia, jednakże ciągle istnieje potrzeba znalezienia nowego podłoża tak by poprawić jakość warstw grafenu. Jako alternatywę rozważa się cienkie warstwy miedzi wytwarzane metodami PVD osadzane na nieprzewodzącym podłożu. W niniejszym artykule przedstawiamy własności grafenu wytwarzanego metodą CVD na cienkiej folii miedzianej oraz na warstwach miedzi osadzonych na Si/SiO2. Porównujemy także wyniki otrzymane dla przeniesionych warstw grafenu z obu rodzajów próbek.
Źródło:
Materiały Elektroniczne; 2013, T. 41, nr 2, 2; 26-33
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor
Autorzy:
Weiss, M.
Walkowiak, M.
Wasiński, K.
Półrolniczak, P.
Kokocińska, B.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1032380.pdf
Data publikacji:
2017-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
81.05.ue
Opis:
Graphene film has been produced on untreated Cu substrate by a chemical vapor deposition technique in ambient pressure with liquid ethanol serving as the carbon precursor. The obtained material has been subjected to morphological study, directly on Cu substrate, by means of optical microscopy, scanning electron microscopy, atomic force microscopy, and a detailed Raman analysis. As a benchmark material, graphene obtained on Cu by a conventional CVD from gaseous methane was used. This simple experimental setup has proved to enable obtaining large area graphene samples with nearly 100% substrate coverage and large domains of one carbon layer. As compared to graphene from gaseous precursor, the presented approach resulted in visibly more defects and impurities. These imperfections are due to more complex precursor molecular structure and lack of Cu pretreatment with hydrogen, the later cause being easy to eliminate in course of further optimization of the method. The described approach can be regarded as a viable, low-cost, and experimentally simple alternative for the existing techniques of producing large area graphene. By providing direct comparison with the conventional method, the paper's intention is to provide deeper insight and to fill gap in the understanding of mechanisms involved in graphene formation on copper.
Źródło:
Acta Physica Polonica A; 2017, 131, 6; 1497-1506
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of Disordered Graphene Layers
Autorzy:
Gryglas-Borysiewicz, M.
Jouault, B.
Tworzydło, J.
Lewińska, S.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791293.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Ac
72.20.Fr
73.43.Qt
73.63.Bd
Opis:
Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity $ρ_{xy}$ is nonlinear as a function of B, which can be described using a many-carrier model.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 838-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of the Thermal Stress on the Magnetophonon Peak Structure in the Parallel Transport of the GaAs/AlGaAs Multiple Quantum Wells
Autorzy:
Tomaka, G.
Cebulski, J.
Sheregii, E. M.
Ściuk, W.
Strupiński, W.
Dobrzański, L.
Powiązania:
https://bibliotekanauki.pl/articles/1992453.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
Opis:
The magnetophonon resonance in parallel transport of two types multiple quantum wells was studied. The transverse magnetoresistance was measured in pulsed magnetic fields up to 30 T (within temperature region from 77 to 340 K). A fine structure of magnetophonon resonance peaks which depends on temperature and does not depend on the type of multiple quantum wells, was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 597-602
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
Autorzy:
Wierzchowski, W.
Wieteska, K.
Mazur, K.
Kościewicz, K.
Balcer, T.
Strupiński, W.
Paulmann, C.
Powiązania:
https://bibliotekanauki.pl/articles/1431659.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 μm/h, 5 μm/h and 11 μm/h at 1540°C on n-doped 8°, 4° and 0° off-cut 4H-SiC (00·1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8° and 4° off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0° off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 915-919
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
Autorzy:
Kachniarz, M.
Petruk, O.
Salach, J.
Ciuk, T.
Strupiński, W.
Bieńkowski, A.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1030244.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
81.05.ue
73.22.Pr
72.80.Vp
Opis:
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1250-1253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Graphene Based Flow Sensors
Autorzy:
Kaźmierczak, P.
Binder, J.
Boryczko, K.
Ciuk, T.
Strupiński, W.
Stępniewski, R.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1195452.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
72.80.Vp
73.30.+y
Opis:
We report on attempts to produce a graphene based liquid flow sensor. Our results indicate that modifications of the electric double layer, formed in the vicinity of the graphene surface, dominate over mechanisms responsible for liquid flow-induced voltage/current generation. Several graphene structures were tested in different measurement configurations, aimed to maximize the generated signal amplitude and its stability. Some realizations of working devices in water as well as in aqueous solutions of NaCl or HCl are presented.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1209-1211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ESR Spectroscopy of Graphene with Adsorbed NaCl Particles
Autorzy:
Karpierz, E.
Drabińska, A.
Bożek, R.
Kaźmierczak, P.
Wysmołek, A
Kamińska, M
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1376214.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.ue
72.10.Fk
78.67.Wj
72.80.Vp
Opis:
Due to its peculiar properties graphene is a good candidate for sensor materials. Therefore, it is important to study influence of different fluids on graphene layer. The presented studies showed pinning of NaCl microcrystals to graphene surface after immersing graphene in NaCl solution and subsequent careful rinsing with distilled water. The atomic force microscopy images revealed presence of many NaCl-related structures over 100 nm high on graphene surface. The electron spin resonance spectrum for magnetic field perpendicular to the graphene layer consisted of several lines originating from NaCl. The pinning of NaCl microcrystals resulted in increase of electron scattering, as confirmed by the Raman spectroscopy (the increase of intensity of D and D' bands) and weak localization measurement (the decrease of coherence length).
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1187-1189
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas
Autorzy:
Korona, K.
Drabińska, A.
Surowiecka, K.
Wołowiec, L.
Borysiuk, J.
Caban, P.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811946.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.55.Cr
72.40.+w
Opis:
We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1179-1186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Studies of Defects in Graphene Grown on SiC
Autorzy:
Grodecki, K.
Bożek, R.
Borysiuk, J.
Strupinski, W.
Wysmolek, A.
Stępniewski, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047919.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.48.Gh
78.30.Fs
Opis:
The Raman scattering studies of multi-layer graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) substrates are presented. Intensity ratio of the D and G bands was used to estimate the average size of the graphene flakes constituting carbon structures. The obtained estimates were compared with flake sizes from atomic force microscopy data. We found that even the smallest structures observed by atomic force microscopy images are much bigger than the estimates obtained from the Raman scattering data. The obtained results are discussed in terms of different average flake sizes inside and on the surface of the multi-layer graphene structure, as well as different type of defects which would be present in the investigated structures apart from edge defects.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 595-596
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
Autorzy:
Mazur, K.
Wierzchowski, W.
Wieteska, K.
Hofman, W.
Sakowska, H.
Kościewicz, K.
Strupiński, W.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1538812.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 272-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie odkształceń sieci krystalicznej w implantowanej warstwie epitaksjalnej GaN osadzonej metodą MOCVD na podłożu szafirowym o orientacji [001]
Lattice strain study in implanted GaN epitaxial layer deposited by means of MOCVD technique on [001] oriented sapphire substrate
Autorzy:
Wójcik, M.
Gaca, J.
Wierzbicka, E.
Turos, A.
Strupiński, W.
Caban, P.
Sathish, N.
Pągowska, K.
Powiązania:
https://bibliotekanauki.pl/articles/192129.pdf
Data publikacji:
2011
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
HRXRD
implementacja jonowa
dyfrakcja
ion implantation
diffraction
Opis:
W pracy zbadano warstwy epitaksjalne GaN o grubości 1000 nm implantowane jonami Ar++ w zakresie dawek od 7 ⋅ 1013 cm-2 do 1 ⋅ 1015 cm-2. Wyznaczono zakres proporcjonalności pomiędzy dawką a średnią zmianą odległości pomiędzy płaszczyznami równoległymi do powierzchni swobodnej implantowanego kryształu GaN. Wyznaczono korelację pomiędzy wielkością dawki jonów a rozkładem odkształceń sieci krystalicznej występujących w kierunku [001] w warstwie epitaksjalnej. Stwierdzono, że odkształcane są płaszczyzny sieciowe równolegle do interfejsu, a komórka elementarna warstwy implantowanej ulega tetragonalizacji.
In the present work 1000 nm epitaxial GaN layer implanted with Ar++ ions in the dose range from 7 ⋅ 1013 cm-2 to 1 ⋅ 1015 cm-2 was investigated. The range of linearity between dose and the average change of interplanar spacing of planes parallel to the surface of the implanted GaN crystal was determined. It was found a correlation between the distribution of displaced atoms and lattice deformation occurring in the [001] direction in the epitaxial layer. It was also observed the tetragonalization of unit cell due to implantation.
Źródło:
Materiały Elektroniczne; 2011, T. 39, nr 4, 4; 22-31
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MOVPE InP based material for millimeter and submillimeter wave generation and amplification
Autorzy:
Strupiński, W.
Kosiel, K.
Jasik, A.
Jakieła, R.
Jeleński, A.
Kollberg, E.
Dillner, L.
Nawaz, M.
Powiązania:
https://bibliotekanauki.pl/articles/308777.pdf
Data publikacji:
2002
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
epitaxy InP
MOVPE
microwave generation
Opis:
The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.
Źródło:
Journal of Telecommunications and Information Technology; 2002, 1; 8-10
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-25 z 35

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