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    Wyświetlanie 1-9 z 9
    Tytuł:
    LPT and SLPT Measurement Methods of Flat-Band Voltage (VFB) in MOS Devices
    Autorzy:
    Piskorski, K.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308206.pdf
    Data publikacji:
    2009
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    flat-band voltage
    light pulse technique
    MOS system
    photoelectric methods
    scanned light pulse technique
    Opis:
    The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating the MOS structure with a semitransparent metal gate by a UV light beam, are often competitive for typical electric measurements. The results obtained by different photoelectric methods are, in many cases, more accurate and reproducible than the results of other measurements. The flat-band voltage VFB is an important parameter of any MOS structure since its value influences the threshold voltage VT , which decides for example about power consumption of MOS transistors. One of the methods to measure the VFB value is the electric method of C(V) characteristic. This method involves certain calculations and requires the knowledge about parameters of the investigated sample. The accuracy of this method is rarely better than š100 mV (for higher doping of the substrates the accuracy is worse). The other method of VFB value determination, outlined in this article, is the photoelectric light pulse technique (LPT) method. This method based on the idea proposed by Yun is currently being optimized and verified experimentally.
    Źródło:
    Journal of Telecommunications and Information Technology; 2009, 4; 76-82
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy concepts involved in MOS characterization
    Autorzy:
    Engström, O.
    Gutt, T.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308781.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    C-V technique
    capture cross sections
    interface states
    Meyer-Neldel rule
    MOS
    thermally stimulated current
    Opis:
    Starting from a quantum statistical reasoning, it is demonstrated that entropy properties of silicon/silicon dioxide interface electron traps may have a strong influence on measured distributions of interface states, depending on measurement method used. For methods, where the Fermi-level is used as a probe to define an energy position, the scale is based on free energy. On the other hand, methods based on thermal activation of electrons give the distribution on an enthalpy scale. It is shown that measured interface state distributions are influenced by the distribution of entropy, and that common features of measured energy distributions may be influenced by entropy variations. These results are used to interpret experimental data on the energy distribution of electron capture cross sections with an exponential increase followed by a more or less constant value as the energy distance of the traps from the conduction band edge increases. Such a relation is shown to be consistent with a situation where the emission and capture processes of electrons obey the Meyer-Neldel rule.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 86-91
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures
    Autorzy:
    Piskorski, K.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308661.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    barrier height
    effective contact potential difference
    MOS system
    Opis:
    Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Modification of this method consisted in using a focused UV light beam of a small diameter d =0.3 mm. It was found that the EBG(x, y) distribution has a characteristic dome-like shape which corresponds with the independently determined shape of the effective contact potential difference fMS(x, y) distribution. On the other hand, the EBS(x, y) distribution is of a random character. It is shown that the EBG(x, y) distribution determines the shape of the fMS(x, y) distribution. The model of the EBG and EBS barrier height distributions over the gate area has been proposed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 49-54
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of the barrier height measurements by the Powell method with the phi MS measurement results
    Autorzy:
    Piskorski, K.
    Kudła, A.
    Rzodkiewicz, W.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308846.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    barrier height
    effective contact potential difference
    MOS system
    Opis:
    In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (phi MS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the phi MS measurement results.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 120-123
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of stress annealing on the electrical and the optical properties of MOS devices
    Autorzy:
    Rzodkiewicz, W.
    Kudła, A.
    Rawicki, Z.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308838.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    stress
    MOS
    Si-SiO2 system
    electrical parameters
    refractive index
    Opis:
    In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 115-119
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variability of the local phi MS values over the gate area of MOS devices
    Autorzy:
    Przewłocki, H. M.
    Kudła, A.
    Brzezińska, D.
    Massoud, H. Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/308803.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOS structure
    photoelectric measurements
    electrical parameters
    mechanical stress
    Opis:
    The local value distributions of the effective contact potential difference (ECPD or the phi MS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A modification of the photoelectric phi MS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found that the phi MS distribution was such, that its values were highest far away from the gate edge regions (e.g., in the middle of a square gate), lower in the vicinity of gate edges and still lower in the vicinity of gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed of this distribution in which the experimentally determined phi MS (x; y) distributions, found previously, are attributed to mechanical stress distributions in MOS structures. Model equations are derived and used to calculate phi MS (x; y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions. Comparison of various characteristics calculated using the model with the results of photoelectric and electrical measurements of a wide range of Al-SiO2-Si structures support the validity of the model.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 34-44
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Distribution of potential barrier height local values at Al-SiO₂ and Si-SiO₂ interfaces of the metal-oxide-semiconductor (MOS) structures
    Autorzy:
    Piskorski, K.
    Przewlocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378455.pdf
    Data publikacji:
    2004
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    Using the photoelectric measurement methods distributions have been determined of the gate-dielectric EBG(x,y) and semiconductor-dielectric EBS(x, y) barrier height values in square gate (1 x 1 mm²) AI-SiO₂Si(n⁺) structures. Measurements have been made on a series of 26 MOS capacitors with semitransparent gates (tAl= 35 nm), on one silicon wafer. Barrier heights were measured using the modified Powell-Berglund and the modified Fowler methods. Measurement methods were modified in such a way as to allow determination of EBG(x,y) and EBS(x,y) distributions, as described in the text. It has been found that the EBG(x,y) distribution has a characteristic dome-like shape which is identical with the independently determined shape of the effective contact potential difference φMS(x,y) distribution. The EBS(x,y) distribution is of a random character and differences between highest and lowest values of EBS for any of the measured capacitors are much smaller than the respective differences in EBG values. These results show that it is the gate-dielectric barrier height distribution EBG(x,y) which causes the dome-like shape of the FMS(x,y) distribution, observed for several years in our laboratory. This finding supports aur hypothesis that the characteristic FMS(x,y) distribution over the gate area of Al-SiO₂-Si structures resuIts from the mechanical stress distribution under the gate electrode.
    Źródło:
    Electron Technology : Internet Journal; 2004, 36, 5; 1-5
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The lateral distribution of the effective contact potential difference over the gate area of MOS structures
    Autorzy:
    Przewłocki, H. M.
    Kudła, I.
    Brzezińska, D.
    Borowicz, L.
    Sawicki, Z.
    Massoud, H. Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/378397.pdf
    Data publikacji:
    2003
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    The lateral distribution of the effective contact potential difference (ECPD), often referred to as the work-function difference φMS, was determined experimentally for the first time over the gate area of a metal-oxide-semiconductor (MOS) structure. The photoelectric method for measuring φMS in MOS devices was modified to characterize the lateral distribution of ECPD. In square MOS gates, it is found that φMS values were highest in the center area of the gate, lower along the gate edges, and lowest at the gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed, in which the experimentally determined φ(x,y) distributions, are attributed to mechanical stress distribtitions in MOS structures. Equations are derived allowing calculation of φMS(x,y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions.
    Źródło:
    Electron Technology : Internet Journal; 2003, 35, 6; 1-6
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoelectronic measurement methods and the universal measurement system for precise parameter determination of semiconductor structures
    Autorzy:
    Machalica, P.
    Porębski, S.
    Zając, J.
    Borowicz, L.
    Kudła, A.
    Przewłocki, H. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378409.pdf
    Data publikacji:
    2002
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    In this article a new Multifunctional System for Photoelectric Measurements of Semiconductor Structures (MSPM) is presented. The system enables very accurate photocurrent measurements at levels as low as 10 fA. Measured structures can be biased by sequences of DC voltages and stimulated by light beams of predefined wavelengths and powers. The software controls all the system actions allowing flexibility in retrieving data stored in the related databases.
    Źródło:
    Electron Technology : Internet Journal; 2001-2002, 34, 5; 1-7
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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