- Tytuł:
- Distribution of potential barrier height local values at Al-SiO₂ and Si-SiO₂ interfaces of the metal-oxide-semiconductor (MOS) structures
- Autorzy:
-
Piskorski, K.
Przewlocki, H. M. - Powiązania:
- https://bibliotekanauki.pl/articles/378455.pdf
- Data publikacji:
- 2004
- Wydawca:
- Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
- Opis:
- Using the photoelectric measurement methods distributions have been determined of the gate-dielectric EBG(x,y) and semiconductor-dielectric EBS(x, y) barrier height values in square gate (1 x 1 mm²) AI-SiO₂Si(n⁺) structures. Measurements have been made on a series of 26 MOS capacitors with semitransparent gates (tAl= 35 nm), on one silicon wafer. Barrier heights were measured using the modified Powell-Berglund and the modified Fowler methods. Measurement methods were modified in such a way as to allow determination of EBG(x,y) and EBS(x,y) distributions, as described in the text. It has been found that the EBG(x,y) distribution has a characteristic dome-like shape which is identical with the independently determined shape of the effective contact potential difference φMS(x,y) distribution. The EBS(x,y) distribution is of a random character and differences between highest and lowest values of EBS for any of the measured capacitors are much smaller than the respective differences in EBG values. These results show that it is the gate-dielectric barrier height distribution EBG(x,y) which causes the dome-like shape of the FMS(x,y) distribution, observed for several years in our laboratory. This finding supports aur hypothesis that the characteristic FMS(x,y) distribution over the gate area of Al-SiO₂-Si structures resuIts from the mechanical stress distribution under the gate electrode.
- Źródło:
-
Electron Technology : Internet Journal; 2004, 36, 5; 1-5
1897-2381 - Pojawia się w:
- Electron Technology : Internet Journal
- Dostawca treści:
- Biblioteka Nauki
Artykuł