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Wyszukujesz frazę "Pimenov, V. G." wg kryterium: Autor

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    Wyświetlanie 1-3 z 3
    Tytuł:
    A numerical solution for a class of time fractional diffusion equations with delay
    Autorzy:
    Pimenov, V. G.
    Hendy, A. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/330624.pdf
    Data publikacji:
    2017
    Wydawca:
    Uniwersytet Zielonogórski. Oficyna Wydawnicza
    Tematy:
    fractional diffusion equation
    difference scheme
    convergence analysis
    równanie dyfuzji ułamkowe
    schemat różnicowy
    analiza zbieżności
    Opis:
    This paper describes a numerical scheme for a class of fractional diffusion equations with fixed time delay. The study focuses on the uniqueness, convergence and stability of the resulting numerical solution by means of the discrete energy method. The derivation of a linearized difference scheme with convergence order O(τ 2−α + h4) in L ∞-norm is the main purpose of this study. Numerical experiments are carried out to support the obtained theoretical results.
    Źródło:
    International Journal of Applied Mathematics and Computer Science; 2017, 27, 3; 477-488
    1641-876X
    2083-8492
    Pojawia się w:
    International Journal of Applied Mathematics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Functional model for the synthesis of nanostructures of the given quality level
    Autorzy:
    Suchikova, Y.O.
    Kovachov, S.S.
    Shishkin, G.O.
    Pimenov, D.O.
    Lazarenko, A.S.
    Bondarenko, V.V.
    Bogdanov, I.T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175807.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    functional model
    electrochemical etching
    quality level
    semiconductors
    nanostructures
    IDEF0 methodology
    model funkcjonalny
    trawienie elektrochemiczne
    poziom jakości
    półprzewodniki
    nanostruktury
    metodologia IDEF0
    Opis:
    Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the nature of changes in the optical characterization produced in sapphire on its irradiation with a pulsed powerful stream of hydrogen ions
    Autorzy:
    Gribkov, V.
    Ivanov, L.
    Maslyaev, S.
    Pimenov, V.
    Sadowski, M.
    Skladnik-Sadowska, E.
    Banaszak, A.
    Kopeć, G.
    Cheblukov, Y.
    Kozodaev, M. A.
    Suvorov, A. L.
    Smirnov, I. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/147991.pdf
    Data publikacji:
    2004
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    optical characteristics
    irradiation
    fast ion stream
    morphology
    Opis:
    Changes in the optical characteristics in synthetic sapphire specimens produced by microsecond pulse irradiation with a stream of hydrogen ions of energies ranging up to tens keV have been observed. Data on decrease in the optical reflection, measured within the wavelength range of 200 900 nm, are presented. This characterization is compared with the data received by optical and atomic force microscopy as well as by lattice structure analysis performed with X-rays. The measurements indicate that the changes of optical parameters are not a consequence of absorption increase and/or sapphire decomposition. They result from modifications of the morphology and structure of surface layer of the sapphire samples, induced by irradiation.
    Źródło:
    Nukleonika; 2004, 49, 2; 43-49
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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