Autor: Majkusiak, B. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers
Autorzy:: Walczak, J.
Majkusiak, B.
Powiązania:: https://bibliotekanauki.pl/articles/308021.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: ultrathin SOI
scattering mechanisms
electron mobility
Opis:: Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 39-49
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electron mobility and drain current in strained-Si MOSFET
Autorzy:: Walczak, J.
Majkusiak, B.
Powiązania:: https://bibliotekanauki.pl/articles/308631.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electron mobility
strained-Si MOSFET
Opis:: Electron mobility and drain current in a strained-Si MOSFET have been calculated and compared with the mobility and drain current obtained for the relaxed material. In the first step, our mobility model has been calibrated to the "universal mobility" according to the available experimental data for unstrained Si MOSFETS. Then, employing the mobility parameters derived in the calibration process, electron mobility and the drain current have been calculated for strained-Si MOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 84-87
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
Autorzy:: Janik, T.
Jakubowski, A.
Majkusiak, B.
Korwin-Pawłowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/308423.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structures
ultrathin dielectrics
high-k dielectrics
Opis:: Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 65-69
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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