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    Wyświetlanie 1-8 z 8
    Tytuł:
    XPS and Raman Characterizations of $Zn_{1-x}Cd_{x}O$ Films Grown at the Different Growth Conditions
    Autorzy:
    Shtepliuk, I.
    Khyzhun, O.
    Lashkarev, G.
    Khomyak, V.
    Lazorenko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403642.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the $Zn_{1-x}Cd_{x}O$ semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the $Zn_{1-x}Cd_{x}O$ films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/$O_2$ gas ratio and dc power.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1034-1038
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
    Autorzy:
    Ievtushenko, A.
    Khyzhun, O.
    Shtepliuk, I.
    Tkach, V.
    Lazorenko, V.
    Lashkarev, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399119.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    77.55.hf
    68.55.Ln
    Opis:
    Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of $Ar//O_2$ Gas Ratio on the Properties of the $Zn_{0.9}Cd_{0.1}O$ Films Prepared by DC Reactive Magnetron Sputtering
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khomyak, V.
    Marianchuk, P.
    Koreniuk, P.
    Myroniuk, D.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492665.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    Opis:
    $Zn_{0.9}Cd_{0.1}O$ ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of $Zn_{0.9}Cd_{0.1}O$ films can be controlled by changing the gas ratio of $Ar//O_2$. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-061-A-065
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding
    Autorzy:
    Shtepliuk, I.
    Lashkarev, G.
    Khyzhun, O.
    Kowalski, B.
    Reszka, A.
    Khomyak, V.
    Lazorenko, V.
    Timofeeva, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492932.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    78.67.Bf
    81.05.Dz
    81.07.Bc
    Opis:
    ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire $c-Al_2O_3$ substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in $Ar-O_2$ atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 914-917
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering
    Autorzy:
    Ievtushenko, A.
    Karpyna, V.
    Lashkarev, G.
    Lazorenko, V.
    Baturin, V.
    Karpenko, A.
    Lunika, M.
    Dan'ko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811931.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    61.05.cp
    68.55.jm
    Opis:
    Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1131-1137
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Detector with High Internal Photocurrent Gain Based on ZnO:N
    Autorzy:
    Kosyachenko, L. A.
    Lashkarev, G. V.
    Ievtushenko, A. I.
    Lazorenko, V. I.
    Sklyarchuk, V. M.
    Sklyarchuk, O. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048107.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.-z
    85.60.Dw
    Opis:
    The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 681-682
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
    Autorzy:
    Myroniuk, D.
    Lashkarev, G.
    Shtepliuk, I.
    Lazorenko, V.
    Maslyuk, V.
    Timofeeva, I.
    Romaniuk, A.
    Strelchuk, V.
    Kolomys, O.
    Khomyak, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399153.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    78.55.Et
    71.55.Gs
    Opis:
    Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 891-894
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
    Autorzy:
    Ievtushenko, A.
    Lashkarev, G.
    Lazorenko, V.
    Karpyna, V.
    Sichkovskyi, V.
    Kosyachenko, L.
    Sklyarchuk, V.
    Sklyarchuk, O.
    Bosy, V.
    Korzhinski, F.
    Ulyashin, A.
    Khranovskyy, V.
    Yakimova, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811930.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    85.60.Dw
    72.40.+w
    Opis:
    Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1123-1129
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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