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Wyświetlanie 1-15 z 20
Tytuł:
Effect of Thermal Annealing on Optical Properties of Implanted Gaas
Autorzy:
Kulik, M.
Komarov, F. F.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/2011008.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Fs
61.72.Vv
78.20.-e
Opis:
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10$\text{}^{16}$ cm$\text{}^{-2}$ indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 131-135
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions
Autorzy:
Didyk, A. Y.
Komarov, F. F.
Vlasukova, L. A.
Gracheva, E. A.
Hofman, A.
Yuvchenko, V. N.
Wiśniewski, R.
Wilczyńska, T.
Powiązania:
https://bibliotekanauki.pl/articles/146738.pdf
Data publikacji:
2008
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
semiconductors
gallium arsenide
swift heavy ions
inelastic energy loss
atomic force microscopy (AFM)
Opis:
We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.
Źródło:
Nukleonika; 2008, 53, 2; 77-82
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiation Degradation of Bipolar Transistor Current Gain
Autorzy:
Miskiewicz, S.
Komarov, A.
Komarov, F.
Zayats, G.
Soroka, S.
Powiązania:
https://bibliotekanauki.pl/articles/1033766.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
radiation
numerical simulation
bipolar transistors
lifetime
minority charge carriers
recombination
current gain
Opis:
Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the ⁶⁰Co 1.2 MeV γ -rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7×10⁵ rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 288-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Swift Proton Transmission through Tapered Glass Capillaries
Autorzy:
Komarov, F.
Kamyshan, A.
Pil'ko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1503781.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.35.+a
Opis:
A study of the 150-300 keV proton beam transmission through glass (borosilicate) tapered capillaries with different diameters of the input and output of the capillary was performed. The focusing effect was observed. The areal density of the transmitted beam is enhanced by approximately 20 times. It was shown that changing a taper angle from 0.5 deg to 1.7 deg evidences the increase of the transmission coefficient more than by 300 times keeping the initial energy spectrum of ions.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 16-18
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Simulation of Radiation Effects in SiO₂/Si Structures
Autorzy:
Komarov, F.
Zayats, G.
Komarov, A.
Miskiewicz, S.
Michailov, V.
Komsta, H.
Powiązania:
https://bibliotekanauki.pl/articles/1402212.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
02.30.Hq
02.60.Cb
Opis:
The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 857-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
Autorzy:
Komarov, A.
Velichko, O.
Zayats, G.
Komarov, F.
Miskiewicz, S.
Mironov, A.
Makarevich, Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1400426.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.J-
07.05.Tp
07.05.Bx
Opis:
Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 804-808
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions
Autorzy:
Didyk, A.
Komarov, F.
Vlasukova, L.
Yuvchenko, V.
Hofman, A.
Powiązania:
https://bibliotekanauki.pl/articles/147490.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
InP crystals
GaAs crystals
preliminary disorder
swift ion irradiation
surface topography
macrodefect
Opis:
InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.
Źródło:
Nukleonika; 2006, 51, 2; 105-109
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chemical Composition of Native Oxide Layers on $In^{+}$ Implanted and Thermally Annealed GaAs
Autorzy:
Kulik, M.
Kołodyńska, D.
Żuk, J.
Komarov, F.
Filiks, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400486.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
79.60.-i
82.80.Yc
Opis:
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of $3 \times 10^{16} cm^{-2}$. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction $O^{16}(α,α)O^{16}$ method. The chemical composition of native oxide layers on $In^{+}$ implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. $As_{2}O_{3}$, $As_{2}O_{5}$, $Ga_{2}O_{3}$, $GaAs$, $InAs$ and $InAsO_4$ compounds were detected in these layers.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 943-947
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:
Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition and Microstructure of Surface Layers Produced by Ion Beam Assisted Deposition of Metals from a Pulsed Arc-Discharge Plasma onto Aluminum Substrates
Autorzy:
Poplavsky, V.
Komarov, F.
Luhin, V.
Pil'ko, V.
Partyka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402241.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
68.55.Nq
Opis:
Ion beam assisted deposition of alloying metals (Zn, Cd, Zr, Cr) onto pure aluminum and aluminum alloy substrates from the plasma of a pulsed arc discharge for the purpose of materials corrosion stability was carried out. The Rutherford backscattering spectrometry, electron backscatter diffraction, scanning electron microscopy, and electron probe microanalysis methods were applied to investigate composition and microstructure of the prepared layers. It was found that the obtained layers are characterized by amorphous atomic structure and contain the atoms of deposited metal, substrate material components, as well as impurities of oxygen and carbon; their thickness was measured to be ≈ 30-100 nm.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 946-948
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Thermal Treatment on the Structure and Mechanical Properties of Coatings Based on (Ti, Hf, Nb, Si)N
Autorzy:
Pogrebnjak, A.
Komarov, F.
Sobol, O.
Kaverina, A.
Shypylenko, A.
Karwat, C.
Powiązania:
https://bibliotekanauki.pl/articles/1198976.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
62.20.Qp
62.25.-g
Opis:
Current paper presents the results of investigating of nanostructured cathode arc vacuum evaporation coatings, based on (Ti, Hf, Nb, Si)N. Several methods of the structural and elemental analysis were used: proton microbeam, nano- and micro-electron beam, X-ray diffraction analysis. To determine tribological properties (scratch resistance, adhesive and cohesive strength) of the coatings, scratch testing were conducting. Influence of thermal annealing at temperatures 300, 500, 800, 1000C on elemental composition, microstructure, residual stress, phase composition, profiles of atomic distribution in the coatings were investigated.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1312-1315
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Perspective Composite Coatings by Ion-Beam Assisted Deposition
Autorzy:
Komarov, F.
Pilko, V.
Pogrebnjak, A.
Karvat, C.
Kiszczak, K.
Kozak, C.
Powiązania:
https://bibliotekanauki.pl/articles/1400425.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Nq
Opis:
TiAlN, TiSiN, and TiCrN composite layers were deposited by magnetron sputtering and sliding - angle ion beam sputtering of the inner surface of hollow truncated cones of different compositions. The composition of both type coatings and component depth distributions were studied by the Rutherford backscattering spectrometry. The structural and phase analyses of the deposited films were performed by transmission electron microscopy and diffraction. Microhardness, wear resistance and friction coefficient of the coatings were also measured and discussed in the relationship with the structure and composition. Microhardness tests showed that the registered data varied in the range 10 to 50 GPa, depending on composition and concentration of components. The best wear protection results from the magnetron deposited Ti-Al-N systems in a narrow range of component concentrations. A minimal friction coefficient was revealed for the magnetron sputtered layers.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 800-803
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation and Characterization of Nanostructured Composite Coatings Based on the TiN Phase
Autorzy:
Komarov, F.
Konstantinov, S.
Pogrebnjak, A.
Pilko, V.
Kozak, C.
Opielak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1198880.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Nq
Opis:
Nanostructured thin-film coatings based on titanium nitride, doped with silicon, chromium and aluminium were the object of this study. The creation of a smooth transition layer was carried out by the changing of a supplying nitrogen flow to the vacuum chamber during the application. TiSiN, TiCrN and TiAlN coatings were deposited. The studies of the structure, elemental and phase composition of the coatings were carried out. Also, the performance of coatings was investigated. The results can be used in today's technology, such as mechanical engineering.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1292-1295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Zuk, J.
Pyszniak, K.
Kulik, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504152.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
78.60.Fi
Opis:
We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to $H_2^{+}$ ions (100 keV, 1.2 × $10^{16} cm^{-2}$ in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 204-207
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
Autorzy:
Komarov, F.
Vlasukova, L.
Milchanin, O.
Greben, M.
Komarov, A.
Mudryi, A.
Wesch, W.
Wendler, E.
Zuk, J.
Kulik, M.
Ismailova, G.
Powiązania:
https://bibliotekanauki.pl/articles/1400427.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.72.Ff
63.20.-e
78.66.-w
Opis:
Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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