Autor: Bugajski, M - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Theoretical Analysis of Optical Gain in Quantum Well Lasers Including Valence-Band Mixing Effect
Autorzy:: Łepkowski, S.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1968351.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Dx
42.55.Px
Opis:: The linear optical gain in the AlGaAs/GaAs quantum well lasers is studied theoretically, taking into account the valence-band mixing effect. Our approach is based on the multiband effective-mass theory (k p method) and the density-matrix formalism. In order to obtain the valence bands' structure we employ the 4×4 Luttinger-Kohn Hamiltonian, neglecting the coupling to the split-off band. The spectral dependence of the linear optical gain is calculated using the density-matrix method with interband relaxation. Finally, we analyse the spatial distribution of the optical gain in the quantum well region for the photon energy corresponding to the peak value of the linear gain.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 903-907
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Electronic States in Type-II Superlattices
Autorzy:: Machowska-Podsiadlo, E.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1807643.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.15.Dx
73.21.Cd
78.67.Pt
85.35.Be
Opis:: In this paper the electronic states in type-II superlattices are demonstrated. Band dispersions of InAs/GaSb periodic structure were calculated with the respect of the light and the heavy holes states mixing at InAs/GaSb interfaces. The effect of narrow energy band gap of InAs was taken into account and the wavelengths corresponding to optical transitions in the superlattice were presented.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-65-S-68
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Monte Carlo Studies of Quantum Cascade Lasers
Autorzy:: Borowik, P.
Thobel, J.
Bugajski, M.
Adamowicz, L.
Powiązania:: https://bibliotekanauki.pl/articles/1807675.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.-d
72.20.Jv
73.63.-b
78.67.-n
Opis:: Results of multi particle Monte Carlo studies of a mid-infrared QCL structure, for the first time fabricated by Page et al., are presented. It has been demonstrated that for the considered structure design at least 9 electron energy levels per laser segment should be used to correctly describe the electric current properties. Mechanisms responsible for electron population on higher laser level are discussed.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-49-S-51
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: High Resistivity AlGaAs Grown by Low Temperature MBE
Autorzy:: Radomska, D.
Ratajczak, J.
Regiński, K.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1992076.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ey
Opis:: Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n$\text{}^{+}$/LT grown layer /n$\text{}^{+}$ resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 10$\text{}^{9}$ Ω cm, were monocrystalline, uniformly precipitated and without dislocations.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 492-496
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
Autorzy:: Wójcik-Jedlińska, A.
Muszalski, J.
Bugajski, M.
Łukowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1812025.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
85.35.Be
78.67.De
42.55.Sa
42.55.Xi
Opis:: In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1437-1443
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
Autorzy:: Wójcik-Jedlińska, A.
Gradkowski, K.
Kosiel, K.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/378431.pdf
Data publikacji:: 2006
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:: lasery
AlGaAs
lasery kaskadowe
fotoluminescencja
modelowanie numeryczne
spektroskopa
lasers
Quantum Cascade Laser (QCL)
photoluminescence
numerical simulations
spectroscopy
Opis:: The properties of quantum cascade laser (QCL) structures have been investigated by optical technique based on spontaneous emission measurements: photoluminescence excitation (PLE) spectroscopy. Three types of test structures used for obtaining final QCL device were examined , i.e., single sequence of coupled quantum wells, which form an active region of the device, 30 sequences of this active region separated by 25 nm thick AlGaAs barriers and finally complete, undoped structure consisting of 30 of sequences repeated active regions and superlattice injectors. The results has been compared with numerical simulations. The role of such measurements has also been discussed.
Źródło:: Electron Technology : Internet Journal; 2005-2006, 37/38, 10; 1-4
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:: Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1992051.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Fd
78.20.-e
Opis:: We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Visible Light Emission from Porous Silicon
Autorzy:: Bugajski, M.
Wesołowski, M.
Lewandowski, W.
Ornoch, J.
Kątcki, J.
Powiązania:: https://bibliotekanauki.pl/articles/1924257.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.65.-s
Opis:: The aim of this paper is the study of porous Si prepared by preferential anodic dissolution in concentrated HF acid solutions. Porous silicon layers exhibited extremely efficient luminescence in the 700-900 nm range at room temperature. Basic characteristics of this luminescence strongly suggest the intrinsic origin of the process, directly related to quantum confinement. The additional transmission-electron-microscopy and electron-diffraction studies - were performed to support hypothesis that luminescence originates from silicon nanostructures.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 914-918
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Resonant Cavity Enhanced Photonic Devices
Autorzy:: Bugajski, M.
Muszalski, J.
Ochalski, T.
Kątcki, J.
Mroziewicz, B.
Powiązania:: https://bibliotekanauki.pl/articles/2030303.pdf
Data publikacji:: 2002-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Fs
78.66.Fd
78.55.-m
78.67.De
78.45.+h
78.47.+p
Opis:: In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In$\text{}_{x}$Ga$\text{}_{1-x}$As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.
Źródło:: Acta Physica Polonica A; 2002, 101, 1; 105-118
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: The influence of MBE growth conditions on optical properties of InGlGaAs/AlGaAs structures
Autorzy:: Kosiel, K.
Regiński, K.
Szerling, A.
Piwoński, T.
Bugajski, M.
Powiązania:: https://bibliotekanauki.pl/articles/378399.pdf
Data publikacji:: 2004
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:: Optical properties of compressively strained In₀.₂₄Al₀.₁₉Ga₀.₅₇As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (T_s) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate T_s for InAlGaAs were experimentally found.
Źródło:: Electron Technology : Internet Journal; 2004, 36, 4; 1-3
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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