Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Bąk- Misiuk, J." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 27
Tytuł:
Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors
Autorzy:
Bąk-Misiuk, J.
Paszkowicz, W.
Domagała, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929715.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Wg
Opis:
An application of X-ray quasi-forbidden reflection method of composition determination for A$\text{}^{II}$B$\text{}^{VI}$ pseudobinary compounds is discussed. Three typical cases of the intensity dependence on the composition, as well as the choice of the most suitable reflection are presented.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 681-684
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First-Principles Calculation of He-H Interaction in c-Si
Autorzy:
Gnidenko, A. A.
Zavodinsky, V. G.
Misiuk, A.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/2044684.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
71.55.Cn
Opis:
We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 353-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
Autorzy:
Janik, E.
Grasza, K.
Mycielski, A.
Bąk-Misiuk, J.
Kachniarz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929755.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
78.55.Et
Opis:
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition Determination of Some A$\text{}^{II}$B$\text{}^{VI}$ Ternary Semiconductors from Quasi-Forbidden Reflection Intensity
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Dynowska, E.
Miotkowska, S.
Paszkowicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931658.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Wg
Opis:
The aim of the present paper is to study the possibility of application of the X-ray quasi-forbidden reflection method to the composition determination of the sphalerite-type Cd$\text{}_{1-x}$M$\text{}_{x}$Te = Mg, Zn, Mn) single crystals. The method is based on the property of quasi-forbidden reflections that their integral intensity is very sensitive to composition and weakly sensitive to crystal lattice defects. An example of application for a Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystal is presented.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 575-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods
Autorzy:
Pełka, J. B.
Górecka, J.
Auleytner, J.
Domagała, J.
Bąk-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1964119.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Jk
Opis:
The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10$\text{}^{16}$ I cm$\text{}^{-2}$ of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 905-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Constant of Doped Semiconductor
Autorzy:
Leszczyński, M.
Litwin-Staszewska, E.
Suski, T.
Bąk-Misiuk, J.
Domagała, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933910.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
65.70.+y
Opis:
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 837-840
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy
Autorzy:
Żytkiewicz, Z. R.
Domagała, J.
Bąk-Misiuk, J.
Dobosz, D.
Leszczyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968459.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.Bs
68.55.Ln
Opis:
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1092-1096
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes of GaP: N Defect Structure under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Kozankiewicz, B.
Misiuk, A.
Adamczewska, J.
Skibska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1924323.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
Opis:
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 87-93
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:
Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1890764.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
61.70.-r
81.40.-z
Opis:
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Kulik, M.
Kobzev, A.
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1538976.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
61.72.uf
66.10.C-
61.80.Jh
81.20.-n
82.80.Yc
85.40.-e
Opis:
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 332-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment
Autorzy:
Szuszkiewicz, W.
Gębicki, W.
Bąk-Misiuk, J.
Domagała, J.
Leszczyński, M.
Hartwig, J.
Powiązania:
https://bibliotekanauki.pl/articles/1964169.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
81.40.-z
73.60.Br
Opis:
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1003-1007
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
Autorzy:
Misiuk, A.
Bąk-Misiuk, J.
Bryja, L.
Kątcki, J.
Ratajczak, J.
Jun, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030659.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.72.Yx
81.40.Vw
Opis:
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 719-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth and Properties of GaMnAs(100) Films
Autorzy:
Sadowski, J.
Domagała, J.
Bąk- Misiuk, J.
Świątek, K.
Kanski, J.
Ilver, L.
Oscarsson, H.
Powiązania:
https://bibliotekanauki.pl/articles/1992165.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
79.60.Bm
71.55.Eq
Opis:
We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 509-513
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E.
Powiązania:
https://bibliotekanauki.pl/articles/1945264.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
65.70.+y
Opis:
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies