Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs