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Tytuł:
Existence of p-Adic Quasi Gibbs Measures for Mixed Type p-Adic Ising λ-Model
Autorzy:
Dogan, M.
Akin, H.
Mukhamedov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1398800.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.50.+q
02.20.Qs
Opis:
We consider nearest-neighbors and next nearest-neighbors p-adic Ising λ-model with spin values {∓ 1} on a Cayley tree of order two. First we prove that the model satisfies the Kolmogorov consistency condition and then we prove that the nonlinear equation corresponding to the model has at least two solutions in $Q_{p}$, where p is a prime number p ≥ 3. One of the roots is in $ε_{p}$ and the others are in $Q_{p}$\$ε_{p}$. If the nonlinear equation has more than one non-trivial solutions for the model then we conclude that p-adic quasi Gibbs measure exists for the model.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A new source of male sterility in rye (Secale cereale L.).
Autorzy:
Warzecha, Roman
Salak-Warzecha, Krystyna
Powiązania:
https://bibliotekanauki.pl/articles/2198914.pdf
Data publikacji:
2003-12-21
Wydawca:
Instytut Hodowli i Aklimatyzacji Roślin
Tematy:
male strility
new sources
rye
type P
type V
Opis:
Pampa cytoplasm has served as the main source of male sterility in hybrid rye breeding programs in Europe for 30 years and there is a need of introducing new CMS sources to prevent cytoplasm uniformity. Several CMS sources were discovered and studied in the former Soviet Union. The CMS sources in rye can be classified into two major groups, the P (Pampa) type and the V (Vavilov) type. The main goal of this study was to widen the “sterile” cytoplasm as a tool for rye hybrid development. ‘Koerntner’ represent the same or similar source of male sterility like CMS ‘CM’ and CMS ‘V type’. This source is genetically different from the sources of male sterility ‘Pampa’ and ‘D. Zlote’-1. In F2 progenies develop by self-pollination F1 plants, of P.6.2-1 × line 113, segregation according to the ratio three male fertile plants to one male sterile, was observed. The segregation ratio in F2 indicate that one or two recessive gene(s) are being involved in the interaction with mutated (S) cytoplasm to cause male sterility.
Źródło:
Plant Breeding and Seed Science; 2003, 48; 61-65
1429-3862
2083-599X
Pojawia się w:
Plant Breeding and Seed Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Note on the congruence of Ankeny-Artin-Chowla type modulo p²
Autorzy:
Jakubec, Stanislav
Powiązania:
https://bibliotekanauki.pl/articles/1390712.pdf
Data publikacji:
1998
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Opis:
The results of [2] on the congruence of Ankeny-Artin-Chowla type modulo p² for real subfields of $ℚ(ζ_p)$ of a prime degree l is simplified. This is done on the basis of a congruence for the Gauss period (Theorem 1). The results are applied for the quadratic field ℚ(√p), p ≡ 5 (mod 8) (Corollary 1).
Źródło:
Acta Arithmetica; 1998, 85, 4; 377-388
0065-1036
Pojawia się w:
Acta Arithmetica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Domieszkowanie monokryształów antymonku galu na typ przewodnictwa n oraz na typ p
Doping gallium antimonide single crystals for n-type and p-type conductivity
Autorzy:
Mirowska, A.
Orłowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/192328.pdf
Data publikacji:
2010
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
GaSb
metoda Cz
Te
Si
Zn
koncentracja domieszek
GDMS
Cz method
doping
dopant concentration
Opis:
Monokryształy antymonku galu domieszkowane na typ przewodnictwa n oraz na typ p orientacji < 100 > otrzymane zostały zmodyfikowaną metodą Czochralskiego zintegrowaną z syntezą in-situ. Zbadano wpływ parametrów technologicznych na skuteczność procesu domieszkowania i dobrano parametry w celu otrzymania monokryształów o pożądanym typie przewodnictwa oraz koncentracji nośników. Uzyskano monokryształy GaSb typu n (domieszkowane tellurem) o koncentracji nośników w zakresie od 1 x 10[indeks górny]17 do 1 x 10[indeks górny]18 cm. Otrzymane monokryształy GaSb typu p posiadały koncentrację w zakresie od 4 x 10[indeks górny]17 do 2 x 10[indeks górny]19 cm³ (domieszkowane krzemem) oraz koncentrację od 2 x 10[indeks górny]18 do 1 x 10[indeks górny]19 cm³ (domieszkowane cynkiem). Zbadano wpływ koncentracji domieszki (Te, Zn, Si), jak też sposobu jej wprowadzania (Si), na własności elektryczne otrzymanych kryształów.
Gallium antimonide (GaSb) single crystals with n--type or p-type conductivity were grown by modified Czochralski method integrated with in-situ synthesis. The influence of technological parameters on doping process and its effectivity was investigated. Tellurium doped n-type GaSb single crystals were obtained with carrier concentration from 1 x 10[sup]17 to 1 x 10[sup]18 cm-³. GaSb p-type single crystals were obtained with carrier concentration from 4 x 10[sup]17 to 2 x 10[19] cm-³ (Si-doped) and from 2 x 10[sup]18 to 1 x 10[sup]19 cm-³ (Zn-doped). Dopant concentration was estimated by GDMS analysis.
Źródło:
Materiały Elektroniczne; 2010, T. 38, nr 1, 1; 17-32
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characteristics of Metal/p-type CdTe Schottky Contacts
Autorzy:
Szatkowski, J.
Sierański, K.
Kasprzak, J. F.
Powiązania:
https://bibliotekanauki.pl/articles/1879831.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Ei
Opis:
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 175-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Realization of p-Type Conductivity in ZnO via Potassium Doping
Autorzy:
Bousmaha, M.
Bezzerrouk, M.
Baghdad, R.
Chebbah, K.
Kharroubi, B.
Bouhafs, B.
Powiązania:
https://bibliotekanauki.pl/articles/1398925.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.dk
81.05.Dz
73.20.At
Opis:
Our work focuses on the study of the electronic structure of undoped and K-doped ZnO using density functional theory as implemented in the Wien2k package. Generalized gradient approximation and GGA plus Tran-Blaha-modified Becke-Johnson (TB-mBJ) were used to calculate the exchange-correlation energy. From the electronic properties, ZnO has a direct band gap in (Γ-Γ) direction with a value of 0.76 eV within GGA and 2.63 eV within GGA + TB-mBJ. For the K-doped ZnO (12.5%) the gap was found to be 1.15 eV within GGA and 3.28 eV within GGA + TB-mBJ, we have observed that an emersion of a new narrow band exists in the valence band which is mainly caused by K 3p states with a little Zn 4s and Zn 3d effect.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1155-1158
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiAl-based Ohmic Contacts to p-type 4H-SiC
Autorzy:
Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz
Powiązania:
https://bibliotekanauki.pl/articles/1844507.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ohmic contact
SiC
silicon carbide
TiAl
Opis:
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Purinergic signaling in the pancreas and the therapeutic potential of ecto-nucleotidases in diabetes
Autorzy:
Cieślak, Marek
Roszek, Katarzyna
Powiązania:
https://bibliotekanauki.pl/articles/1039191.pdf
Data publikacji:
2014
Wydawca:
Polskie Towarzystwo Biochemiczne
Tematy:
ATP
adenosine
pancreas
diabetes mellitus
P-type receptors
ecto-nucleotidases
Opis:
It is widely accepted that purinergic signaling is involved in the regulation of functions of all known tissues and organs. Extracellular purines activate two classes of receptors, P1-adenosine receptors and P2-nucleotide receptors, in a concentration-dependent manner. Ecto-enzymes metabolizing nucleotides outside the cell are involved in the termination of the nucleotide signaling pathway through the release of ligands from their receptors. The pancreas is a central organ in nutrient and energy homeostasis with endocrine, exocrine and immunoreactive functions. The disturbances in cellular metabolism in diabetes mellitus lead also to changes in concentrations of intra- and extracellular nucleotides. Purinergic receptors P1 and P2 are present on the pancreatic islet cells as well as on hepatocytes, adipocytes, pancreatic blood vessels and nerves. The ATP-dependent P2X receptor activation on pancreatic β-cells results in a positive autocrine signal and subsequent insulin secretion. Ecto-NTPDases play the key role in regulation of extracellular ATP concentration. These enzymes, in cooperation with 5'-nucleotidase can significantly increase ecto-adenosine concentration. It has been demonstrated that adenosine, through activation of P1 receptors present on adipocytes and pancreatic islets cells, inhibits the release of insulin. Even though we know for 50 years about the regulatory role of nucleotides in the secretion of insulin, an integrated understanding of the involvement of purinergic signaling in pancreas function is still required. This comprehensive review presents our current knowledge about purinergic signaling in physiology and pathology of the pancreas as well as its potential therapeutic relevance in diabetes.
Źródło:
Acta Biochimica Polonica; 2014, 61, 4; 655-662
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Hansen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1992215.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Eq
Opis:
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al$\text{}_{0.5}$Ga$\text{}_{0.5}$As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E$\text{}_{H1}$=0.15 eV, E$\text{}_{H3}$=0.4 eV, and E$\text{}_{H4}$=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 565-569
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$(H_p,L_p)$-type inequalities for the two-dimensional dyadic derivative
Autorzy:
Weisz, Ferenc
Powiązania:
https://bibliotekanauki.pl/articles/1287322.pdf
Data publikacji:
1996
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Tematy:
Hardy spaces
p-atom
interpolation
Walsh functions
dyadic derivative
Opis:
It is shown that the restricted maximal operator of the two-dimensional dyadic derivative of the dyadic integral is bounded from the two-dimensional dyadic Hardy-Lorentz space $H_{p,q}$ to $L_{p,q}$ (2/3 < p < ∞, 0 < q ≤ ∞) and is of weak type $(L_1,L_1)$. As a consequence we show that the dyadic integral of a ∞ function $f ∈ L_1$ is dyadically differentiable and its derivative is f a.e.
Źródło:
Studia Mathematica; 1996, 120, 3; 271-288
0039-3223
Pojawia się w:
Studia Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs
Autorzy:
Kundrotas, J.
Čerškus, A.
Valušis, G.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E.
Powiązania:
https://bibliotekanauki.pl/articles/1813382.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.67.De
71.30.+h
Opis:
We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×$10^{12} cm^{-2}$.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 963-966
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mössbauer investigations of Mn2-xFexP0.5As0.5
Autorzy:
Mitsiuk, V. I.
Tkachenka, T. M.
Budzyński, M.
Surowiec, Z.
Valkov, V. I.
Powiązania:
https://bibliotekanauki.pl/articles/147832.pdf
Data publikacji:
2013
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
Fe2P-type crystal structure
local environment
magnetic interaction
Mössbauer effect
Opis:
Magnetic and Mossbauer measurements were performed for Mn2.xFexP0.5As0.5, 0.5 less-than or equal to x less-than or equal to 1.0. It was shown that with decreasing Fe content magnetic interaction significantly weakens. Low temperature magnetic structure could be explained as a superposition of ferromagnetic and antiferromagnetic contributions to the whole magnetic moment of the alloy.
Źródło:
Nukleonika; 2013, 58, 1; 169-172
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Effect Etching Time on Structure Properties of Nano-Crystalline p-type Silicon
Autorzy:
Hadi, H. A.
Powiązania:
https://bibliotekanauki.pl/articles/412165.pdf
Data publikacji:
2014
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Porous Silicon
Electrochemical Etching
ECE
XRD
AFM
Opis:
This paper reports the influence of the etching time on structural characteristics of porous silicon manufactured by electrochemical etching (ECE) anodization p-type silicon wafers. Micro and nano-structural features of the samples are mainly investigated by XRD and AFM techniques. The morphological properties of PS layer such as nano-crystalline size, the structure aspect of PS layer and lattice constant have been investigated. Nanocrystals size (grain size) computing from XRD data (145 to 85) nm is resulting the increasing etching time.AFM investigations reveal increase in (RMS) roughness, Sz.(Ten Point height) and average diameter of the porous structure with increase in etching time.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 327-333
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Historia tranzystora polowego, początki i geneza powstania
The history of field effect transistor, beginning and origins
Autorzy:
Czupryniak, J.
Namirowska, P.
Ossowski, T.
Powiązania:
https://bibliotekanauki.pl/articles/134813.pdf
Data publikacji:
2017
Wydawca:
ADVSEO
Tematy:
field effect transistor
FET
MOSFET
unipolar
N-type channel
P-type channel
gateway
Opis:
Automation diagnostic methods and techniques of environmental monitoring combined with higher precision, sensitivity and selectivity of the currently available detection methods evokes a growing interest of medicine and medical diagnostics to produce the miniaturized diagnostic devices and technology which enable automation of medical procedures. Application of different sensors including chemical ones for detecting substance such as: peptides, proteins, ions, heavy metals in biological systems in which is low concentration of analyte is observed, forces us to use a miniaturized chemical nanosensors with high sensitivity and selectivity. This type of sensors are FET, ISFET and MOSFET. The nano-diagnostic devices with ability of molecular recognition that’s today's world most important analytical challenge for designers and chemists in order to obtain rapid and cheap diagnostic methods. In this paper we present the principle of FET and the genesis of the measuring system.
Źródło:
Technical Issues; 2017, 1; 28-33
2392-3954
Pojawia się w:
Technical Issues
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400487.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 948-951
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
73.20.Dx
Opis:
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiobjective variational programming under generalized (V, p)-B-type I functions
Autorzy:
Khazafi, K.
Rueda, N.
Enflo, P.
Powiązania:
https://bibliotekanauki.pl/articles/970961.pdf
Data publikacji:
2009
Wydawca:
Polska Akademia Nauk. Instytut Badań Systemowych PAN
Tematy:
multiobjective variational programming
efficient solution
proper efficient solution
generalized (V, p)-B-type I functions
sufficient conditions
mixed type duality rusults
Opis:
In this paper, we generalize the (V, p)-invexity denned for nonsmooth multiobjective fractional programming by Mishra, Rueda and Giorgi (2003) to variational programming problems by defining new classes of vector- valued functions called (V, p)-B-type I and generalized (V, p)-B-type I. Then we use these new classes to derive various sufficient optimality conditions and mixed type duality results.
Źródło:
Control and Cybernetics; 2009, 38, 2; 555-572
0324-8569
Pojawia się w:
Control and Cybernetics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Density Control by Illumination in Surface Doped, p-Type (Cd,Mn)Te Quantum Wells
Autorzy:
Maślana, W.
Kossacki, P.
Gaj, J. A.
Ferrand, D.
Bertolini, M.
Tatarenko, S.
Cibert, J.
Kutrowski, M.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2046939.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.67.De
61.72.Vv
Opis:
We report both decrease and increase in the 2D carrier gas density in a simple (Cd,Mn)Te/(Cd,Mg)Te heterostructure with (Cd,Mn)Te quantum well. The two effects were achieved by light with different photon energies. The quantum wells were 10 nm wide with 2D hole gas supplied by surface states. For the sample with 25 nm cap layer thickness, it was possible to tune the hole gas concentration from almost empty well (hole density below 1×10$\text{}^{10}$ cm$\text{}^{-2}$) to 45×10$\text{}^{10}$ cm$\text{}^{-2}$. The illumination with 425 nm wavelength almost doubled the hole gas density from the initial 24×10$\text{}^{10}$ cm$\text{}^{-2}$. The depletion mechanism was most effective for illumination with the orange (575 nm) light.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 255-262
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The divergence phenomena of interpolation type operators in $L^p$ space
Autorzy:
Xie, T.
Zhou, S.
Powiązania:
https://bibliotekanauki.pl/articles/1396174.pdf
Data publikacji:
1992
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Tematy:
real distinct nodes
$L^p$ space
divergence phenomenon
approximation
interpolation type operator
Źródło:
Colloquium Mathematicum; 1992, 63, 2; 323-328
0010-1354
Pojawia się w:
Colloquium Mathematicum
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of degradation of electrical properties after thermal oxidation of p-type Cz-silicon wafers
Autorzy:
Maoudj, M.
Bouhafs, D.
Bourouba, N.
Khelifati, N.
El Amrani, A.
Boufnik, R.
Hamida Ferhat, A.
Powiązania:
https://bibliotekanauki.pl/articles/1054957.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
81.16.Pr
88.40.jj
Opis:
In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 725-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Magnetic Studies of $Zn_{x}Mn_{y}Cr_{z}Se_{4}$ p-Type Semiconductors
Autorzy:
Jendrzejewska, I.
Groń, T.
Duda, H.
Zajdel, P.
Pacyna, A.
Maciążek, E.
Powiązania:
https://bibliotekanauki.pl/articles/1791347.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Kz
75.30.Et
Opis:
The structural, electrical and magnetic investigations carried out on the $Zn_{x}Mn_{y}Cr_{z}Se_{4}$ polycrystals with y = 0.19, 0.29 and 0.38 revealed the spinel structure with the Mn ions occupying tetrahedral sites, p-type conduction with polaronic transport at high temperatures and antiferromagnetic order with a Néel temperature of 20 K and a Curie-Weiss temperature of 103 K. With increasing Mn content in a sample both the effective magnetic moment and the re-entrant temperature increase while the first and second critical fields connected with a metamagnetic transition and the breakdown of the conical spin arrangement decrease, respectively. These results are interpreted in terms of giant cubic anisotropy as well as an effect of Mn impurities on the screw structure of $ZnCr_{2}Se_{4}$.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 913-915
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures
Autorzy:
Sitarek, P.
Ryczko, K.
Misiewicz, J.
Reuter, D.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492827.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Pz
78.66.Fd
78.67.De
Opis:
We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
Autorzy:
Abd, Ahmad Naji
Mishjil, Khudheir A.
Abdulsada, Ali Hamid
Habubi, N. F.
Powiązania:
https://bibliotekanauki.pl/articles/1177996.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
AFM
FTIR
TiO2
X-Ray diffraction
XRD
electrochemical etching p-type silicon wafer
nanocrystalline porous silicon
Opis:
In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
Źródło:
World Scientific News; 2018, 96; 134-148
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wibracyjny dozownik sitowy. Cz. 1. Wysyp masowy nasion
Vibration type sieve batcher. P. 1. Volumetric pour of seeds
Autorzy:
Poćwiardowski, W.
Kaniewska, J.
Domoradzki, M.
Powiązania:
https://bibliotekanauki.pl/articles/286561.pdf
Data publikacji:
2011
Wydawca:
Polskie Towarzystwo Inżynierii Rolniczej
Tematy:
dozownik
materiał ziarnisty
dozownik wibracyjny
strumień masowy przesypu nasion
grainy material batcher
vibration type batcher
seed pour mass stream
Opis:
W pracy badano wibracyjny dozownik sitowy. Do regulacji dozowania zastosowano przesłonę zmniejszającą powierzchnię czynną sita do 0,15; 0,30; 0,45; i 1,00 całkowitej czynnej powierzchni sita. Wyznaczono równanie opisujące dozowanie materiału i stwierdzono, że gęstość strumienia masowego wysypu dla poszczególnych frakcji i sit jest funkcją średnicy otworu sita w potędze 2,5, powierzchni i przesłonięcia sita.
A vibration type volumetric sieve batcher was examined in this work. A screen plate was used to control batching, which reduced the active sieve surface to 0.15; 0.30; 0.45 and 1.00 of its total surface. An equation specifying material batching was determined. It has been observed that the density of pour mass stream for individual fractions and sieves is a function of the sieve hole/mesh diameter raised to the power of 2.5, area, and covered the sieve area percentage.
Źródło:
Inżynieria Rolnicza; 2011, R. 15, nr 1, 1; 205-213
1429-7264
Pojawia się w:
Inżynieria Rolnicza
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wibracyjny dozownik sitowy. Cz. 2. Wysyp ilościowy nasion
Vibration type sieve batcher. P. 2. Quantitative pour of seeds
Autorzy:
Poćwiardowski, W.
Kaniewska, J.
Domoradzki, M.
Powiązania:
https://bibliotekanauki.pl/articles/286559.pdf
Data publikacji:
2011
Wydawca:
Polskie Towarzystwo Inżynierii Rolniczej
Tematy:
wibracyjny dozownik sitowy
dozownik ilościowy nasion
quantitative seed batcher
vibration type sieve batcher
Opis:
W pracy badano wibracyjny sitowy dozownik ilościowy. Obliczenia prowadzono dla ilości sztuk dozowanych nasion. Do regulacji dozowania zastosowano przesłonę zmniejszającą powierzchnię czynną sita do 0,15; 0,30; 0,45; i 1,00 całkowitej czynnej powierzchni sita. Wyznaczono równanie opisujące prędkość nasion w otworze wysypowym w szt.źs-1. Stwierdzono że prędkość nasion w otworze U = 7,32*10(8)*d(0,3) zależy od średnicy otworu w potędze 0,3. Ilościowe natężenie dozowania liczone w sztukach nasion zależy od średnicy otworu sita, powierzchni sita, prześwitu i przesłonięcia sita. [wzór w artykule].
A vibration type quantitative sieve batcher was examined in this work. Calculations were carried out for the number of batched seeds. A screen plate was used to control batching, which reduced the active sieve surface to 0.15; 0.30; 0.45 and 1.00 of its total surface. An equation specifying the seeds velocity in pcs. per sec. was determined. It has been observed that the seeds velocity in a hole sized U = 7,32*10(8)*d(0,3) depends on the hole diameter raised to the power of 0.3. Quantitative batching rate calculated in pieces of seeds depends on the sieve hole/mesh diameter, sieve area, clearance, and the covered sieve area percentage.
Źródło:
Inżynieria Rolnicza; 2011, R. 15, nr 1, 1; 215-221
1429-7264
Pojawia się w:
Inżynieria Rolnicza
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solutions to p(x)-Laplace type equations via nonvariational techniques
Autorzy:
Avci, M.
Powiązania:
https://bibliotekanauki.pl/articles/255416.pdf
Data publikacji:
2018
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
Leray-Lions type operator
nonlinear monotone operator
approximation
variable Lebesgue spaces
Opis:
In this article, we consider a class of nonlinear Dirichlet problems driven by a Leray-Lions type operator with variable exponent. The main result establishes an existence property by means of nonvariational arguments, that is, nonlinear monotone operator theory and approximation method. Under some natural conditions, we show that a weak limit of approximate solutions is a solution of the given quasilinear elliptic partial differential equation involving variable exponent.
Źródło:
Opuscula Mathematica; 2018, 38, 3; 291-305
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of the etching time and current density on Capacitance-Voltage characteristics of P-type of porous silicon
Autorzy:
Hadi, Hasan A.
Abood, Tareq H.
Mohi, Ali T.
Karim, Mahmood S.
Powiązania:
https://bibliotekanauki.pl/articles/1178661.pdf
Data publikacji:
2017
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
electrochemical etching
heterojunction
porous silicon
thin films
Opis:
In This paper, electrochemical etching teqniques was using to formation of nano crystalline porous silicon layer on p-type Si substrates. Measurement of capacitance – voltage characteristics at various etching time and current densities were used for calculated built in voltage and type of heterojunction. The built in voltage values were decreased with increasing etching time and current densities for both anisotype Al/PS/p-Si/Al heterojunction. These characteristics are interpreted by assuming the abrupt heterojunction model. The effect of different etching time and current densities on electrical properties of PS have been investigated.
Źródło:
World Scientific News; 2017, 67, 2; 149-160
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Temperature Overheating Effect in SiGe p-Type Quantum Wells. Methods of the Hole-Phonon Energy Relaxation Time Determination
Autorzy:
Berkutov, I.
Powiązania:
https://bibliotekanauki.pl/articles/1506186.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Lh
72.20.Ht
72.20.My
Opis:
The temperature dependence of the hole-phonon energy relaxation time $τ_{hph}$ (T) under hot-hole conditions was studied in SiGe p-type quantum wells. The hot-hole temperature $T_{h}$ was estimated through three different experimental methods: (i) from a comparison of the amplitude of the Shubnikov-de Haas oscillations changed by current and temperature; (ii) from a comparison of the phase relaxation time in the effect of weak localization obtained either at different temperatures and minimum current or at different current at a fixed temperature; (iii) from a comparison of the temperature and current dependences of the sample resistance. The values of $T_{h}$ obtained by all three different methods were used to calculate, from the heat balance equation, the temperature dependence of the hole-phonon energy relaxation time $τ_{hph}$ (T). All three temperature dependences $τ_{hph}$ (T) were almost identical and demonstrated transition of the 2D system from "partial inelasticity" to small angle scattering at lower temperatures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 228-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimized Temperature in Phosphorous Diffusion Gettering Setup of Chromium Transition Metal in Solar Grade Multicrystalline p-Type Silicon Wafer
Autorzy:
Bouhafs, D.
Khelifati, N.
Kouhlane, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1398753.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jj
81.05.Bx
81.65.Tx
87.15.Pc
Opis:
We have investigated in this work the effect of the temperature profile during homogeneous phosphorous diffusion gettering (PDG) on multicrystalline (mc-Si) silicon p-type wafers destined for photovoltaic solar cells. Temperatures were varied from 800°C to 950°C with time cycle of 90 minutes. Phosphorous profile of n⁺p junction was measured by secondary ion mass spectroscopy (SIMS) from 0.45 μm to 2.4 μm. Chromium concentration profile measured on the same samples by SIMS shows a high accumulated concentration of Cr atoms in the gettering layer at 900°C and 950°C, compared to samples obtained at 800°C and 850°C. The effective lifetime $(\tau_\text{eff})$ of minority charge carriers characterized by quasi-steady state photoconductance (QSSPC) is in correlation with these results. From the QSSPC measurements we have observed an amelioration of $\tau_\text{eff}$ from 7 μs before PDG to 26 μs in the samples after PDG, processed at 900°C. This indicates the extraction of a non-negligible concentration (5×10¹⁴ cm¯³ to 5×10¹⁵ cm¯³) of Cr from the bulk to the surface gettering layer, as observed in the chromium SIMS profiles. A light degradation of $\tau_\text{eff}$ (18 μs) is observed in the samples treated at 950°C due probably to a partial dissolution of the metallic precipitates, especially at the grain boundaries and in the dislocations vicinity. The related $\tau_\text{Cr-Impurity}$ lifetime value of about 8.5 μs is extracted, which is the result of interstitial $Cr_{i}$ or $Cr_{i}B_{s}$ pairs, proving their strongest recombination activity in silicon.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 690-693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
p53-dependent suppression of the human calcyclin gene (S100A6): the role of Sp1 and of NFκB
Autorzy:
Króliczak, Weronika
Pietrzak, Maciej
Puzianowska-Kuznicka, Monika
Powiązania:
https://bibliotekanauki.pl/articles/1040715.pdf
Data publikacji:
2008
Wydawca:
Polskie Towarzystwo Biochemiczne
Tematy:
gene suppression
wild type and mutant p53
Sp1
calcyclin gene (S100A6)
NFκB
Opis:
Calcyclin (S100A6) is believed to participate in cell cycle control. It was, however, unclear if its expression depends on p53, a key regulator of apoptosis and cell cycle. We therefore performed transcription regulation assays in HeLa cells and found that wild type p53 suppressed the S100A6 promoter up to 12-fold in a dose-dependent manner. In contrast, the well-characterized V143A, R175H, R249S, and L344A p53 mutants cloned from human cancers suppressed this promoter with a 6 to 9-fold lower efficiency. All the sites mediating the p53-dependent suppression were contained in the -167 to +134 fragment of the S100A6 promoter. Separate overexpression of either Sp1 or of NFκB only partially counteracted the p53 inhibitory effect on the S100A6 promoter, while simultaneous overexpression of both these transactivators resulted in a complete abolishment of the p53 inhibitory effect on this promoter. Sp1 and NFκB binding to the probes resembling their putative binding sites present in the S100A6 promoter was decreased in the presence of wild type p53. We propose that the suppression of S100A6 is yet another mechanism by which p53 inhibits proliferation. Insufficient suppression of this gene by p53 mutants could well be responsible for calcyclin overexpression and cell cycle deregulation observed in cancer tissues.
Źródło:
Acta Biochimica Polonica; 2008, 55, 3; 559-570
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Ga2O3 Nanoparticles Dispersion on Microstructure and Thermoelectric Properties of p-Type BiSbTe Based Alloys
Autorzy:
Kim, E.-B.
Koo, J.-M.
Hong, S.-J.
Powiązania:
https://bibliotekanauki.pl/articles/351366.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
thermoelectric properties
Bi0.5Sb1.5Te3 alloys
Seebeck coefficient
mechanical alloying
spark plasma sintering
Opis:
In this study, p-type Bi0.5Sb1.5Te3 based nanocomposites with addition of different weight percentages of Ga2O3 nanoparticles are fabricated by mechanical milling and spark plasma sintering. The fracture surfaces of all Bi0.5Sb1.5Te3 nanocomposites exhibited similar grain distribution on the entire fracture surface. The Vickers hardness is improved for the Bi0.5Sb1.5Te3 nanocomposites with 6 wt% added Ga2O3 due to exhibiting fine microstructure, and dispersion strengthening mechanism. The Seebeck coefficient of Bi0.5Sb1.5Te3 nanocomposites are significantly improved owing to the decrease in carrier concentration. The electrical conductivity is decreased rapidly upon the addition of Ga2O3 nanoparticle due to increasing carrier scattering at newly formed interfaces. The peak power factor of 3.24 W/mK2 is achieved for the base Bi0.5Sb1.5Te3 sintered bulk. TheBi0.5Sb1.5Te3 nanocomposites show low power factor than base sample due to low electrical conductivity.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2B; 993-997
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:
Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
85.30.Tv
Opis:
We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors
Autorzy:
Ramos, David
Delmas, Marie
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Almqvist, Susanne
Becanovic, Smilja
Hellström, Per-Erik
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204214.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
surface leakage
type-II superlattice
megapixel
n-on-p
Opis:
This work investigates the potential of p-type InAs/GaSb superlattice for the fabrication of full mid-wave megapixel detectors with n-on-p polarity. A significantly higher surface leakage is observed in deep-etched n-on-p photodiodes compared to p-on-n diodes. Shallowetch and two-etch-step pixel geometry are demonstrated to mitigate the surface leakage on devices down to 10 μm with n-on-p polarity. A lateral diffusion length of 16 μm is extracted from the shallow etched pixels, which indicates that cross talk could be a major problem in small pitch arrays. Therefore, the two-etch-step process is used in the fabrication of 1280 × 1024 arrays with a 7.5 μm pitch, and a potential operating temperature up to 100 K is demonstrated.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144556
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
Autorzy:
Nowakowski-Szkudlarek, Krzesimir
Muziol, Grzegorz
Żak, Mikolaj
Hajdel, Mateusz
Siekacz, Marcin
Feduniewicz-Żmuda, Anna
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173471.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
gallium nitride
molecular beam epitaxy
contacts
Opis:
We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.
Źródło:
Optica Applicata; 2020, 50, 2; 323-330
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Microstructure and Thermoelectric Properties of P-Type BiSbTe Alloys by Usage of Different Revolutions Per Minute (RPM) During Mechanical Milling
Autorzy:
Yoon, S.-M.
Madavali, B.
Yoon, Y.-N.
Hong, S.-J.
Powiązania:
https://bibliotekanauki.pl/articles/354749.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Bi0.5Sb1.5Te3 alloys
mechanical alloying
spark plasma sintering
thermoelectric properties
Opis:
In this work, p-type Bi0.5Sb1.5Te3 alloys were fabricated by high-energy ball milling (MA) and spark plasma sintering. Different revolutions per minute (RPM)s were used in the MA process, and their effect on microstructure, and thermoelectric properties of p-type Bi0.5Sb1.5Te3 were systematically investigated. The crystal structure of milled powders and sintered samples were characterized using X-ray diffraction. All the powders exhibited the same morphology albeit with slight differences find at 1100 RPM conditions. A slight grain size refinement was observed on the fracture surfaces from 500 to 1100 RPM specimens. The temperature dependence of Seebeck coefficient, electrical conductivity, and power factors were measured as a function of temperature with different RPM conditions. The power factor shows almost same (~3.5 W/mK2 at RT) for all samples due to unchanged Seebeck and electrical conductivity values. The peak ZT of 1.07 at 375K is obtained for 1100 RPM specimen due to low thermal conductivity.
Źródło:
Archives of Metallurgy and Materials; 2017, 62, 2B; 1167-1171
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reduction of Thermal Conductivity Through Complex Microstructure by Dispersion of Carbon Nanofiber in p-Type Bi0.5Sb1.5Te3 Alloys
Autorzy:
Sharief, P.
Madavali, B.
Sohn, Y.
Han, J. H.
Song, G.
Hong, S. J.
Powiązania:
https://bibliotekanauki.pl/articles/2049341.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
bismuth telluride
carbon nano fiber
grain size
Thermal conductivity
ZT
Opis:
The influence of nano dispersion on the thermoelectric properties of Bi2Te3 was actively investigating to wide-spread thermoelectric applications. Herein this report, we have systematically controlled the microstructure of Bi0.5Sb1.5Te3 (BST) alloys through the incorporation of carbon nanofiber (CNF), and studied their effect on thermoelectric properties, and mechanical properties. The BST/x-CNF (x-0, 0.05, 0.1, 0.2 wt.%) composites powder was fabricated using high energy ball milling, and subsequently consolidated the powder using spark plasma sintering. The identification of CNF in bulk composites was analyzed in Raman spectroscopy and corresponding CNF peaks were recognized. The BST matrix grain size was greatly reduced with CNF dispersion and consistently decreased along CNF percentage. The electrical conductivity was reduced and Seebeck coefficient varied in small-scale by embedding CNF. The thermal conductivity was progressively diminished, obtained lattice thermal conductivity was lowest compared to bare sample due to induced phonon scattering at interfaces of secondary phases as well as highly dense fine grain boundaries. The peak ZT of 0.95 achieved for 0.1 wt.% dispersed BST/CNF composites. The Vickers hardness value of 101.8 Hv was obtained for the BST/CNF composites.
Źródło:
Archives of Metallurgy and Materials; 2021, 66, 3; 803-808
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Denseness of the spaces $Φ_V$ of Lizorkin type in the mixed $L^{p̅}(ℝ^n)$-spaces
Autorzy:
Samko, Stefan
Powiązania:
https://bibliotekanauki.pl/articles/1289371.pdf
Data publikacji:
1995
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Opis:
The spaces Φ_V(ℝ^{n}) are defined to consist of Schwartz test functions φ such that the Fourier transform φ̂ and all its derivatives vanish on a given closed set V ⊂ ℝ^{n}. Under the only assumption that m(V) = 0 it is shown that Φ_V is dense in $C_0(ℝ^{n})$ and in the space $L^{p̅}(ℝ^n)$ with the mixed norm, for $1/p̅$ in a certain pyramid. The result on the denseness for arbitrary $p̅ = (p_1,..., p_n)$, 1 < p_k < ∞, k = 1,...,n,$ is proved for so-called quasibroken sets V.
Źródło:
Studia Mathematica; 1995, 113, 3; 199-210
0039-3223
Pojawia się w:
Studia Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiplicity results for an impulsive boundary value problem of p(t)-Kirchhoff type via critical point theory
Autorzy:
Mokhtari, A.
Moussaoui, T.
O'Regan, D.
Powiązania:
https://bibliotekanauki.pl/articles/255007.pdf
Data publikacji:
2016
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
genus theory
nonlocal problems
impulsive conditions
Kirchhoff equation
p(i)-Laplacian
variational methods
critical point theory
Opis:
In this paper we obtain existence results of k distinct pairs nontrivial solutions for an impulsive boundary value problem of p(t)-Kirchhoff type under certain conditions on the parameter λ.
Źródło:
Opuscula Mathematica; 2016, 36, 5; 631-649
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative study of phenol degradation with a wild-type and genetically modified P. vesicularis (pBR322). plasmid stability and fame profiling
Autorzy:
Mrozik, A.
Swędzioł, Ż.
Miga, S.
Powiązania:
https://bibliotekanauki.pl/articles/207456.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
biodegradation
phenols
comparative studies
fatty acid methyl ester
phenol degradation
plasmid stability
biodegradacja
kwasy tłuszczowe
fenole
badania porównawcze
ester metylowy kwasu tłuszczowego
degradacja fenolu
stabilność plazmidu
Opis:
It was evidenced that P. vesicularis is an efficient degrader of phenol but does not have a reporter system for monitoring bacterial survival in the environment. Therefore, P. vesicularis (pBR322) has been constructed. In this study we experimentally confirmed that introduction of plasmid pBR322 into P. vesicularis did not change its ability to degrade phenol in liquid media and after its inoculation into sterile soil. Moreover, it has been shown that plasmid pBR322 was stable in P. vesicularis during all experiments. Additionally, the pattern of fatty acid methyl esters for P. vesicularis (pBR322) looked similar to that of P. vesicularis under phenol exposure. Some fatty acids, especially branched and cyclopropane ones were sensitive markers of phenol utilization. These findings indicate that P. vesicularis (pBR322) due to the presence of plasmid could be used instead of P. vesicularis in bioaugmentation of phenol-contaminated areas.
Źródło:
Environment Protection Engineering; 2015, 41, 1; 137-155
0324-8828
Pojawia się w:
Environment Protection Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region
Autorzy:
Durlin, Quentin
Aliane, Abdelkader
André, Luc
Kaya, Hacile
Cocq le, Mélanie
Goudon, Valérie
Vialle, Claire
Veillerot, Marc
Hartmann, Jean-Michel
Powiązania:
https://bibliotekanauki.pl/articles/2204221.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
germanium (Ge)
photodiode
shortwave infrared detector
Opis:
Germanium (Ge) PiN photodetectors are fabricated and electro-optically characterised. Unintentionally and p-type doped Ge layers are grown in a reduced-pressure chemical vapour deposition tool on a 200 mm diameter, <001>-oriented, p-type silicon (Si) substrates. Thanks to two Ge growth temperatures and the use of short thermal cycling afterwards, threading dislocation densities down to 10⁷ cmˉ² are obtained. Instead of phosphorous (P) ion implantation in germanium, the authors use in situ phosphorous-doped poly-crystalline Si (poly-Si) in the n-type regions. Secondary ion mass spectrometry revealed that P was confined in poly-Si and did not diffuse in Ge layers beneath. Over a wide range of tested device geometries, production yield was dramatically increased, with almost no short circuits. At 30 °C and at -0.1 V bias, corresponding to the highest dynamic resistance, the median dark current of 10 μm diameter photodiodes is in the 5-20 nA range depending on the size of the n-type region. The dark current is limited by the Shockley-Read-Hall generation and the noise power spectral density of the current by the flicker noise contribution. A responsivity of 0.55 and 0.33 A/W at 1.31 and 1.55 μm, respectively, is demonstrated with a 1.8 μm thick absorption Ge layer and an optimized anti-reflection coating at 1.55 μm. These results pave the way for a cost-effective technology based on group-IV semiconductors.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144550
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reduction of Thermal Conductivity through the Dispersion of TiC Nanoparticles into a p-Type Bi0.5Sb1.5Te3 Alloy by Ball Milling and Spark Plasma Sintering
Autorzy:
Nagarjuna, Cheenepalli
Madavali, Babu
Lee, Myeong-Won
Yoon, Suk-Min
Hong, Soon-Jik
Powiązania:
https://bibliotekanauki.pl/articles/355940.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Bi0.5Sb1.5Te3 alloys
nanocomposites
ball milling
spark plasma sintering
thermoelectric properties
Opis:
The dispersion of nanoparticles in the host matrix is a novel approach to enhance the thermoelectric performance. In this work, we incorporate the TiC (x = 0, 1 and 2 wt.%) nanoparticles into a p-type Bi0.5Sb1.5Te3 matrix, and their effects on microstructure and thermoelectric properties were systematically investigated. The existence of TiC contents in a base matrix was confirmed by energy dispersive X-ray spectroscopy analysis. The grain size decreases with increasing the addition of TiC content due to grain boundary hardening where the dispersed nanoparticles acted as pinning points in the entire matrix. The electrical conductivity significantly decreased and the Seebeck coefficient was slightly enhanced, which attributes to the decrease in carrier concentration by the addition of TiC content. Meanwhile, the lowest thermal conductivity of 0.97 W/mK for the 2 wt.% TiC nanocomposite sample, which is ~16% lower than 0 wt.% TiC sample. The maximum figure of merit of 0.90 was obtained at 350 K for the 0 wt.% TiC sample due to high electrical conductivity. Moreover, the Vickers hardness was improved with increase the addition of TiC contents.
Źródło:
Archives of Metallurgy and Materials; 2019, 64, 2; 551-557
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Existence of positive radial solutions to a p-Laplacian Kirchhoff type problem on the exterior of a ball
Autorzy:
Graef, John R.
Hebboul, Doudja
Moussaoui, Toufik
Powiązania:
https://bibliotekanauki.pl/articles/29519226.pdf
Data publikacji:
2023
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
Kirchhoff problem
p-Laplacian
positive radial solution
variational methods
Opis:
In this paper the authors study the existence of positive radial solutions to the Kirchhoff type problem involving the p-Laplacian $ -(a+b \sum_{\Omega_e} | \nabla u |^p dx) \Delta_p u = \lambda f (|x|, u), x ∈ \Omega_e, u=0 $ on $ \delta \Omega_e $, where λ > 0 is a parameter, $ Ω_e = {x ∈ \mathbb{R}^N : |x| > r_0}, r_0 > 0, N > p > 1, Δp $ is the p-Laplacian operator, and $ f ∈ C([r_0,+∞) × [0,+∞) , \mathbb{R} ) $ is a non-decreasing function with respect to its second variable. By using the Mountain Pass Theorem, they prove the existence of positive radial solutions for small values of λ.
Źródło:
Opuscula Mathematica; 2023, 43, 1; 47-66
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Odpowiedź biologiczna osteoblastów linii Soas-2 inkubowanych na warstwie Ti3P+(Ti-Ni) implantowanej jonami wapnia
Biological response of osteoblast Saos-2 line to calcium ions implanted surface layer Ti3P+(Ti-Ni) type
Autorzy:
Zajączkowska, A.
Borowski, T.
Rajchel, B.
Wierzchoń, T.
Czarnowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/283905.pdf
Data publikacji:
2008
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Polskie Towarzystwo Biominerałów
Tematy:
osteoblasty
biomateriały tytanowe
implanty
osteoblasts
titanium biomaterials
implants
Źródło:
Engineering of Biomaterials; 2008, 11, no. 77-80; 99-101
1429-7248
Pojawia się w:
Engineering of Biomaterials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The effect of sex, storage time and muscle type on the quality French Lop rabbit meat
Wpływ płci, czasu przechowywania i rodzaju mięśnia na jakość mięsa królików rasy baran francuski
Autorzy:
Ludwiczak, A.
Stanisz, M.
Bykowska, M.
Skladanowska, J.
Sikora, L.
Slosarz, P.
Powiązania:
https://bibliotekanauki.pl/articles/843190.pdf
Data publikacji:
2016
Wydawca:
Polskie Towarzystwo Zootechniczne
Opis:
The aim of the study was to analyse the effect of sex, storage time and muscle type (m. longissimus dorsi and m. biceps femoris) on quality traits of the meat of French Lop rabbits. The muscles were obtained from 12 males and 12 females slaughtered at the age of 90 days. The characteristics analysed included pH, colour parameters, water holding capacity and proximate composition. No effect of sex or muscle type was found (P>0.05) on the pH of the meat in any of the periods analysed. The storage time differentiated (P≤0.01) between pH45min and pH24h and between pH45min and pH7days. None of the colour parameters was influenced by sex (P>0.05), but they were significantly affected by storage time (P≤0.01). Redness and yellowness were also influenced by the type of muscle (P≤0.01). The rabbit meat stored for 7 days was characterised by higher drip loss than the meat stored for 24 hours (1.31-1.49% vs. 3.34-3.57%, P≤0.05). The m. biceps femoris of both sexes had a greater capacity to hold water as measured by the pressure method than m. longissimus dorsi (P≤0.01). There was no effect of sex or muscle type (P>0.05) on the level of cooking loss. Sex and muscle type also had no influence (P>0.05) on the proximate composition of French Lop meat.
Celem pracy było określenie wpływu płci, czasu przechowywania i rodzaju mięśnia (m. longissimus dorsi i m. biceps femoris) na cechy jakościowe mięsa królików rasy baran francuski. Mięśnie pozyskano z tusz 12 samców i 12 samic ubitych w wieku 90 dni. Badania obejmowały pomiar pH, parametrów barwy wg CIE L*a*b*, wodochłonności oraz oznaczenie składu chemicznego. Nie stwierdzono wpływu płci i rodzaju mięśnia na pH (P>0,05) w 45 minut, 24 godziny i 7 dni po uboju. Stwierdzono wpływ czasu przechowywania na pH mięśni (P≤0,01) w przyjętych terminach pomiaru po uboju. Parametry barwy mięsa króliczego nie były zróżnicowane w zależności od płci, stwierdzono natomiast istotny wpływ czasu przechowywania (P≤0,01) oraz wpływ rodzaju mięśnia na indeks czerwieni i żółci (P≤0,01). Mięso królicze przechowywane przez 7 dni charakteryzowało się wyższym wyciekiem naturalnym w porównaniu do mięsa badanego 24 godziny po uboju (1,31-1,49% w porównaniu do 3,34-3,57%; P≤0,05). U obu płci mięsień biceps femoris cechował się większą wodochłonnością (cm2) (P≤0,01) w porównaniu do m. longissimus dorsi. Nie wykazano wpływu rodzaju mięśnia oraz płci (P>0,05) na wielkość wycieku termicznego. Nie stwierdzono również wpływu rodzaju mięśnia oraz płci (P>0,05) na skład chemiczny mięsa królików rasy baran francuski.
Źródło:
Roczniki Naukowe Polskiego Towarzystwa Zootechnicznego; 2016, 12, 2
1733-7305
Pojawia się w:
Roczniki Naukowe Polskiego Towarzystwa Zootechnicznego
Dostawca treści:
Biblioteka Nauki
Artykuł
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