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    Wyświetlanie 1-23 z 23
    Tytuł:
    Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
    Autorzy:
    Hajdel, Mateusz
    Muzioł, Grzegorz
    Nowakowski-Szkudlarek, Krzesimir
    Siekacz, Marcin
    Wolny, Paweł
    Skierbiszewski, Czesław
    Powiązania:
    https://bibliotekanauki.pl/articles/173219.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    InGaN
    laser diode
    waveguide
    injection efficiency
    Opis:
    The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
    Źródło:
    Optica Applicata; 2020, 50, 2; 311-321
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature
    Autorzy:
    Veleschuk, V
    Vlasenko, A
    Kisselyuk, M
    Vlasenko, Z
    Khmil, D
    Borshch, V
    Powiązania:
    https://bibliotekanauki.pl/articles/174776.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    electroluminescence at reverse bias
    InGaN/GaN heterostructures
    defect
    Opis:
    The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.
    Źródło:
    Optica Applicata; 2015, 45, 4; 535-543
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Rentgenowska metoda określania profilu składu chemicznego w heterostrukturach GaN/InGaN otrzymywanych metodą MOCVD na podłożu szafirowym
    HRXRD investigation of the chemical composition profile in the GaN/InGaN heterostructures grown by the MOCVD method on a sapphire substrate
    Autorzy:
    Wójcik, M.
    Strupiński, W.
    Rudziński, M.
    Gaca, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/192140.pdf
    Data publikacji:
    2012
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
    Tematy:
    HRXRD
    heterostruktura
    interfejs
    GaN
    InGaN
    heterostructure
    interface
    Opis:
    Opracowano procedurę graficznego modelowania profilu składu chemicznego w obszarze interfejsu dla związków AIIIN, która w znacznym stopniu ułatwia i skraca proces tworzenia modelu kryształu wielowarstwowego InGaN/GaN. Procedurę tę wykorzystano w trójstopniowej metodzie modelowania heterostruktur InGaN/GaN i z powodzeniem zastosowano do zbadania realnej struktury systemów epitaksjalnych wytworzonych w ITME.
    A procedure for forming a graphical chemical composition profile in the interface region was developed for AIIIN compounds. It greatly simplifies and shortens the process of creating the model of InGaN/GaN heterostructures. The three-step-method was successfully worked out and used for modeling the InGaN/GaN structure, and finally applied to the investigation of the real structure of epitaxial systems produced at ITME by means of the MOCVD technique.
    Źródło:
    Materiały Elektroniczne; 2012, T. 40, nr 4, 4; 48-57
    0209-0058
    Pojawia się w:
    Materiały Elektroniczne
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimization of InGaN laser diodes based on numerical simulations
    Autorzy:
    Sakowski, K.
    Strak, P.
    Krukowski, S.
    Marcinkowski, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1075368.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    02.60.Cb
    Opis:
    Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a particular emphasis on efficiency and optical power of the structures was placed. Effect of the aluminum content in an electron blocking layer on the electron overflow and efficiency is discussed. Substantial decrease of efficiency of laser diodes is reported for low aluminum levels. It is also shown that polarization charges existing in AlInGaN heterostructures grown on GaN polar direction and low ionization degree of magnesium acceptors lead to high resistance of these devices. These effects hinder the carriers from reaching an active region and consequently they impose high operating voltages.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-33-A-35
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
    Autorzy:
    Łepkowski, S.
    Bardyszewski, W.
    Rodak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195356.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    73.22.Dj
    Opis:
    We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1154-1155
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recent Developments in InGaN-Based Blue Leds and Lds
    Autorzy:
    Nakamura, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1994379.pdf
    Data publikacji:
    1999-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ce
    72.80.Ey
    73.60.Br
    71.55.Eq
    Opis:
    UV/blue/green/amber InGaN quantum-well structure light-emitting diodes with an external quantum efficiency of 7.5%, 11.2%, 11.6%, and 3.3% were developed. The localization in the InGaN well layer induced by the In composition fluctuations seems to be a key role of the high efficiency of those InGaN-based light-emitting diodes. When the electrons and holes are injected into the InGaN active layer of the light-emitting diodes, these carriers are captured by the localized energy states before they are captured by the nonradiative recombination centers caused by the large number of threading dislocations. InGaN multi-quantum-well structure laser diodes with modulation doped strained-layer superlattice cladding layers grown on the epitaxially lateral overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 hours under room temperature continuouswave operation. When the laser diode was formed on the GaN layer above the SiO$_2$ mask region without any threading dislodations, the threshold current density was as low as 2.7 kA cm$\text{}^{-2}$. When the laser diode was formed on the window region with the high threading dislocation density, the threshold current density was as high as 4.5 to 9 kA cm$\text{}^{-2}$. A leakage current due to a large number of threading dislocations caused the high threshold current density on the window region.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 1; 153-164
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Efficient Terahertz Emission from InGaN/GaN Heterostructure
    Autorzy:
    Reklaitis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505710.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.72.Ai
    73.20.Mf
    75.70.-i
    78.20.Bh
    78.47.-p
    Opis:
    Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 212-214
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN Alloys
    Autorzy:
    Nargelas, S.
    Malinauskas, T.
    Jarasiunas, K.
    Dimakis, E.
    Georgakilas, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813196.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.J-
    72.20.Jv
    Opis:
    We present experimental studies of nonequilibrium carrier dynamics in InGaN alloys with 70-90% content of In by using picosecond transient grating technique. The observed faster recombination rate in alloys with higher Ga content and formation of a thermal grating via a lattice heating, being more pronounced for layers with larger band gap, indicated that the main reason of the heating is not the excess energy of photons, but the defect density which increases with Ga content. A gradual decrease in carrier lifetime with excitation or with increasing temperature in 50-300 K range point out the role of potential barriers in carrier recombination.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 839-843
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells
    Autorzy:
    Łepkowski, S.
    Gorczyca, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791301.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.D-
    62.50.-p
    81.40.Jj
    78.67.De
    Opis:
    We present theoretical study of the pressure coefficient of the light emission $(dE_{E}/dP)$ in compressively strained zinc-blende InGaAs/GaAs and InGaN/GaN quantum wells, grown in a (001) direction. We investigate the contributions to $dE_{E}$/dP arising from (i) third-order (nonlinear) elasticity, (ii) nonlinear elasticity, originating from pressure dependence of elastic constants, and (iii) nonlinear dependence of elastic constants on composition in InGaAs and InGaN alloys. The obtained results indicate that the use of nonlinear elasticity is essential for determination of $dE_{E}$/dP in the strained InGaAs/GaAs and InGaN/GaN quantum wells, while the inclusion of the nonlinear dependence of elastic constants on composition of InGaAs and InGaN alloys does not improve agreement between the theoretical end experimental values of $dE_{E}$/dP in the considered structures.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 857-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics
    Autorzy:
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043710.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    42.60.By
    73.21.Cd
    Opis:
    The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism - adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600-750ºC, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm$\text{}^{2}$/(V s) at 4.2 K and 2500 cm$\text{}^{2}$/(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5μm wavelengths like electro-optical modulators or all-optical switches.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 635-651
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effects of Nonlinear Elasticity and Electromechanical Coupling on Optical Properties of InGaN/GaN and AlGaN/AlN Quantum Wells
    Autorzy:
    Łepkowski, S. P.
    Majewski, J. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046928.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.De
    62.20.Dc
    77.65.-j
    Opis:
    We present theoretical studies of effects of the nonlinear elasticity and the electromechanical coupling on the optical properties of InGaN/GaN and AlGaN/AlN quantum wells. In these structures, due to the lattice misfit between constituents, the quantum wells are compressively strained and the intrinsic hydrostatic pressure is present. Therefore, the nonlinear elasticity is investigated by taking into account the pressure dependence of elastic stiffness tensor for the strained quantum wells. We show that this effect leads to (i) decrease in the volumetric strain and (ii) increase in the polarization-induced built-in electric field in the quantum wells. Consequently, the interband transition energies in the quantum wells decrease when the nonlinear elasticity of nitrides is considered. On the other hand, we show that the effect of electromechanical coupling, i.e., co-existence of ordinary and converse piezoelectric effects results in increase in the interband transition energies in the considered quantum wells. It turns out that the influence of the nonlinear elasticity on the optical properties is stronger than the influence of electromechanical coupling for InGaN/GaN quantum wells, while for AlGaN/GaN the opposite situation is observed.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 237-242
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Springis, M.
    Tale, I.
    Yang, C. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041743.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 256-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ITO layer as an optical confinement for nitride edge-emitting lasers
    Autorzy:
    Kuc, M.
    Sokół, A. K.
    Piskorski, Ł.
    Dems, M.
    Wasiak, M.
    Sarzała, R. P.
    Czyszanowski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/200863.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    edge-emitting lasers
    InGaN/GaN
    computer simulation
    ITO
    optical confinement
    Opis:
    This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 147-154
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    InGaN QW in External Electric Field Controlled by Pumping of 2D-Electron Gas
    Autorzy:
    Korona, K.
    Drabińska, A.
    Surowiecka, K.
    Wołowiec, L.
    Borysiuk, J.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811946.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    78.55.Cr
    72.40.+w
    Opis:
    We present investigations of GaInN/GaN/AlGaN structure containing cavity designed so that the electric field inside it can be changed by illumination. Numerical calculations show that illumination can change carrier distributions and consequently change the field and potential. The electric field influences properties of a quantum well placed in the cavity. We confirmed experimentally that the electric field controlled by external bias or by optical pumping, can change energy and occupation of electronic states in the quantum well. The quantum well energy could be changed of about 80 meV by voltage and 15 meV by illumination.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1179-1186
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Waveguide Design for Long Wavelength InGaN Based Laser Diodes
    Autorzy:
    Muzioł, G.
    Turski, H.
    Siekacz, M.
    Sawicka, M.
    Wolny, P.
    Cheze, C.
    Cywiński, G.
    Perlin, P.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403640.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    42.82.Et
    81.15.Hi
    Opis:
    One-dimensional optical waveguide calculations were performed to study the dependence of waveguide design on confinement factor (Γp) and optical losses ($\alpha_i$) of nitride laser diodes for emission wavelength ranging from 405 nm to 520 nm. We found that the conventional waveguide design containing GaN waveguide and AlGaN cladding layers known from violet laser diode does not support sufficient confinement of the optical mode for long wavelength devices (λ > 450 nm). We proposed a new design consisting of a thick InGaN waveguide which enhances the confinement. We compared the theoretical predictions with laser diodes grown by plasma assisted molecular beam epitaxy.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1031-1033
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
    Autorzy:
    Nowakowski-Szkudlarek, Krzesimir
    Muziol, Grzegorz
    Żak, Mikolaj
    Hajdel, Mateusz
    Siekacz, Marcin
    Feduniewicz-Żmuda, Anna
    Skierbiszewski, Czesław
    Powiązania:
    https://bibliotekanauki.pl/articles/173471.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    gallium nitride
    molecular beam epitaxy
    contacts
    Opis:
    We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.
    Źródło:
    Optica Applicata; 2020, 50, 2; 323-330
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
    Autorzy:
    Miasojedovas, S.
    Juršėnas, S.
    Kurilčik, G.
    Žukauskas, A.
    Ivanov, V. Yu.
    Godlewski, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038288.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.45.+h
    78.47.+p
    78.67.De
    Opis:
    We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 273-279
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interplay between Internal and External Electric Field Studied by Photoluminescence in InGaN/GaN Light Emitting Diodes
    Autorzy:
    Staszczak, G.
    Khachapuridze, A.
    Grzanka, S.
    Czernecki, R.
    Piotrzkowski, R.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492901.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Fi
    78.67.De
    85.60.Bt
    85.60.Jb
    Opis:
    We have studied a series of polar InGaN/GaN light emitting diodes, consisting of either a blue (440-450 nm) quantum well, or combination of blue and violet (410 nm) quantum wells (with indium content 18% and 10%, respectively). The blue quantum well was always placed close to p-type region of the particular LED. We found that the electroluminescence induced by low current is characterized by light emission from the blue quantum well only. In comparison, optical excitation of our LEDs leads to light emission with energies characteristic either for blue and/or violet quantum wells. The corresponding microphotoluminescence spectra evolve depending on external polarization and variable light intensity of excitation supplied by He-Cd laser. Interplay between built-in electric field and externally applied polarization/screening decides about the band structure profiles and thus radiative recombination mechanisms.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 891-893
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
    Autorzy:
    Ivaldi, F.
    Kret, S.
    Szczepańska, A.
    Czernecki, R.
    Kryśko, M.
    Grzanka, S.
    Leszczyński, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048084.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.bg
    68.37.Lp
    68.65.Fg
    Opis:
    Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 660-662
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelowanie zjawiska spadku sprawności dla dużych gęstości prądów w diodach elektroluminescencyjnych z azotków
    Modeling of efficiency droop effect in GaN leds
    Autorzy:
    Cegielski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/160001.pdf
    Data publikacji:
    2012
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
    Tematy:
    oświetlenie
    elektroliminescencja
    LED
    GaN
    InGaN
    wewnetrzna sprawność kwantowa
    studnia kwantowa
    rekombinacja
    spadek sprawności
    solid state lighting
    internal quantum efficiency
    quantum well
    recombination
    efficiency droop
    Opis:
    Pomimo rozwoju, który nastąpił w technologii wytwarzania białych elektroluminescencyjnych źródeł światła, w urządzeniach tych ciągle istotną ograniczającą rolę pełni zjawisko spadku sprawności generacji światła dla dużych gęstości prądu. Ponadto wciąż nierozpoznane dostatecznie są jego fizyczne podstawy. W referacie przedstawiono możliwe modele opisujące ten efekt, opierając się na dyskutowanych w literaturze hipotetycznych przyczynach: różnych rodzajach rekombinacji Augera, efektach termicznych, występowaniu silnych pól elektrycznych i asymetrii występowania nośników, itp. Poznanie potencjalnych powodów zjawiska spadku efektywności pozwoli na dalszy rozwój źródeł światła opartych na elektroluminescencji. Przełoży to się na niższy koszt uzyskania zamienników tradycyjnych źródeł światła i większe ich rozpowszechnienie, co w istotny sposób może ograniczyć wzrost światowego zużycia energii.
    Despite the development that occurred in the technology of white Light-Emitting Diodes, this devices are still limited by the phenomenon of the efficiency droop that occurs in light generation for large current densities. Moreover, its physical basis is still not sufficiently recognized. The paper presents possible models describing this effect, based on the hypothetical reasons discussed in the literature: different types of Auger recombination, thermal effects, the presence of strong electric fields and the occurrence of the asymmetry of carriers, etc. Knowing the potential reasons for the droop phenomenon will allow the further development of Solid State Light sources. This leads to lower cost retrofits or replacements of traditional light sources and greater their market penetration, which may significantly reduce global energy consumption increase.
    Źródło:
    Prace Instytutu Elektrotechniki; 2012, 255; 7-18
    0032-6216
    Pojawia się w:
    Prace Instytutu Elektrotechniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
    Autorzy:
    Ivanov, V.
    Godlewski, M.
    Miasojedovas, S.
    Juršėnas, S.
    Kazlauskas, K.
    Žukauskas, A.
    Skierbiszewski, C.
    Siekacz, M.
    Leszczyński, M.
    Perlin, P.
    Suski, T.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1179597.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 225-229
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy
    Autorzy:
    Böttcher, T.
    Einfeldt, S.
    Figge, S.
    Kirchner, V.
    Hommel, D.
    Selke, H.
    Ryder, P. L.
    Bertram, F.
    Riemann, T.
    Christen, J.
    Lunz, U.
    Becker, C. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969025.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Dv
    68.65.+g
    78.20.-e
    78.55.-m
    78.55.Cr
    Opis:
    The luminescence of In$\text{}_{x}$Ga$\text{}_{1-x}$N is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 260-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Goldys, E. M.
    Phillips, M.
    Böttcher, T.
    Figge, S.
    Hommel, D.
    Czernecki, R.
    Prystawko, P.
    Leszczynski, M.
    Perlin, P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036870.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.Mm
    68.37.Hk
    78.60.Hk
    Opis:
    Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 689-694
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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