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Wyświetlanie 1-10 z 23
Tytuł:
Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes
Autorzy:
Hajdel, Mateusz
Muzioł, Grzegorz
Nowakowski-Szkudlarek, Krzesimir
Siekacz, Marcin
Wolny, Paweł
Skierbiszewski, Czesław
Powiązania:
https://bibliotekanauki.pl/articles/173219.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
InGaN
laser diode
waveguide
injection efficiency
Opis:
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
Źródło:
Optica Applicata; 2020, 50, 2; 311-321
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature
Autorzy:
Veleschuk, V
Vlasenko, A
Kisselyuk, M
Vlasenko, Z
Khmil, D
Borshch, V
Powiązania:
https://bibliotekanauki.pl/articles/174776.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
electroluminescence at reverse bias
InGaN/GaN heterostructures
defect
Opis:
The electroluminescence spectra at reverse biases in LED InGaN/GaN heterostructures at liquid nitrogen temperatures were studied. At the reverse bias and T = 77 K, avalanche microplasmas breakdowns were observed. Electroluminescence spectra demonstrate two peaks caused by the recombination of carriers in different parts of the structure (quantum well and p-GaN layer). The temperature narrowing the half-width and the shift of electroluminescence spectra peaks inherent to microplasmas were observed.
Źródło:
Optica Applicata; 2015, 45, 4; 535-543
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rentgenowska metoda określania profilu składu chemicznego w heterostrukturach GaN/InGaN otrzymywanych metodą MOCVD na podłożu szafirowym
HRXRD investigation of the chemical composition profile in the GaN/InGaN heterostructures grown by the MOCVD method on a sapphire substrate
Autorzy:
Wójcik, M.
Strupiński, W.
Rudziński, M.
Gaca, J.
Powiązania:
https://bibliotekanauki.pl/articles/192140.pdf
Data publikacji:
2012
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
HRXRD
heterostruktura
interfejs
GaN
InGaN
heterostructure
interface
Opis:
Opracowano procedurę graficznego modelowania profilu składu chemicznego w obszarze interfejsu dla związków AIIIN, która w znacznym stopniu ułatwia i skraca proces tworzenia modelu kryształu wielowarstwowego InGaN/GaN. Procedurę tę wykorzystano w trójstopniowej metodzie modelowania heterostruktur InGaN/GaN i z powodzeniem zastosowano do zbadania realnej struktury systemów epitaksjalnych wytworzonych w ITME.
A procedure for forming a graphical chemical composition profile in the interface region was developed for AIIIN compounds. It greatly simplifies and shortens the process of creating the model of InGaN/GaN heterostructures. The three-step-method was successfully worked out and used for modeling the InGaN/GaN structure, and finally applied to the investigation of the real structure of epitaxial systems produced at ITME by means of the MOCVD technique.
Źródło:
Materiały Elektroniczne; 2012, T. 40, nr 4, 4; 48-57
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of InGaN laser diodes based on numerical simulations
Autorzy:
Sakowski, K.
Strak, P.
Krukowski, S.
Marcinkowski, L.
Powiązania:
https://bibliotekanauki.pl/articles/1075368.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
02.60.Cb
Opis:
Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a particular emphasis on efficiency and optical power of the structures was placed. Effect of the aluminum content in an electron blocking layer on the electron overflow and efficiency is discussed. Substantial decrease of efficiency of laser diodes is reported for low aluminum levels. It is also shown that polarization charges existing in AlInGaN heterostructures grown on GaN polar direction and low ionization degree of magnesium acceptors lead to high resistance of these devices. These effects hinder the carriers from reaching an active region and consequently they impose high operating voltages.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-33-A-35
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
Autorzy:
Łepkowski, S.
Bardyszewski, W.
Rodak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1195356.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.22.Dj
Opis:
We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1154-1155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recent Developments in InGaN-Based Blue Leds and Lds
Autorzy:
Nakamura, S.
Powiązania:
https://bibliotekanauki.pl/articles/1994379.pdf
Data publikacji:
1999-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ce
72.80.Ey
73.60.Br
71.55.Eq
Opis:
UV/blue/green/amber InGaN quantum-well structure light-emitting diodes with an external quantum efficiency of 7.5%, 11.2%, 11.6%, and 3.3% were developed. The localization in the InGaN well layer induced by the In composition fluctuations seems to be a key role of the high efficiency of those InGaN-based light-emitting diodes. When the electrons and holes are injected into the InGaN active layer of the light-emitting diodes, these carriers are captured by the localized energy states before they are captured by the nonradiative recombination centers caused by the large number of threading dislocations. InGaN multi-quantum-well structure laser diodes with modulation doped strained-layer superlattice cladding layers grown on the epitaxially lateral overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 hours under room temperature continuouswave operation. When the laser diode was formed on the GaN layer above the SiO$_2$ mask region without any threading dislodations, the threshold current density was as low as 2.7 kA cm$\text{}^{-2}$. When the laser diode was formed on the window region with the high threading dislocation density, the threshold current density was as high as 4.5 to 9 kA cm$\text{}^{-2}$. A leakage current due to a large number of threading dislocations caused the high threshold current density on the window region.
Źródło:
Acta Physica Polonica A; 1999, 95, 1; 153-164
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Efficient Terahertz Emission from InGaN/GaN Heterostructure
Autorzy:
Reklaitis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1505710.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.72.Ai
73.20.Mf
75.70.-i
78.20.Bh
78.47.-p
Opis:
Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 212-214
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Optical Nonlinearities and Carrier Dynamics in In-Rich InGaN Alloys
Autorzy:
Nargelas, S.
Malinauskas, T.
Jarasiunas, K.
Dimakis, E.
Georgakilas, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813196.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.J-
72.20.Jv
Opis:
We present experimental studies of nonequilibrium carrier dynamics in InGaN alloys with 70-90% content of In by using picosecond transient grating technique. The observed faster recombination rate in alloys with higher Ga content and formation of a thermal grating via a lattice heating, being more pronounced for layers with larger band gap, indicated that the main reason of the heating is not the excess energy of photons, but the defect density which increases with Ga content. A gradual decrease in carrier lifetime with excitation or with increasing temperature in 50-300 K range point out the role of potential barriers in carrier recombination.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 839-843
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells
Autorzy:
Łepkowski, S.
Gorczyca, I.
Powiązania:
https://bibliotekanauki.pl/articles/1791301.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.D-
62.50.-p
81.40.Jj
78.67.De
Opis:
We present theoretical study of the pressure coefficient of the light emission $(dE_{E}/dP)$ in compressively strained zinc-blende InGaAs/GaAs and InGaN/GaN quantum wells, grown in a (001) direction. We investigate the contributions to $dE_{E}$/dP arising from (i) third-order (nonlinear) elasticity, (ii) nonlinear elasticity, originating from pressure dependence of elastic constants, and (iii) nonlinear dependence of elastic constants on composition in InGaAs and InGaN alloys. The obtained results indicate that the use of nonlinear elasticity is essential for determination of $dE_{E}$/dP in the strained InGaAs/GaAs and InGaN/GaN quantum wells, while the inclusion of the nonlinear dependence of elastic constants on composition of InGaAs and InGaN alloys does not improve agreement between the theoretical end experimental values of $dE_{E}$/dP in the considered structures.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 857-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics
Autorzy:
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/2043710.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:
The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism - adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600-750ºC, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm$\text{}^{2}$/(V s) at 4.2 K and 2500 cm$\text{}^{2}$/(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5μm wavelengths like electro-optical modulators or all-optical switches.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 635-651
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 23

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