Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "gallium" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 37
Tytuł:
Beneficiation of Ga from alunite concentrates by selective acid leaching and alkaline precipitation
Autorzy:
Zhu, Mao-Lan
Chen, Hang
Zhong, Shui-Ping
Huang, Zhong-Sheng
Chen, Xi
Hu, Zhi-Biao
Powiązania:
https://bibliotekanauki.pl/articles/110733.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
gallium
selective leaching
precipitation
alunite concentrate
Opis:
In this study beneficiation of Ga from alunite ore was investigated. The effects of the calcination temperature, H2SO4 concentration, leaching temperature and liquid-solid ratio on the dissolution characteristic of Ga, K and Al were studied. The results showed that increasing the calcination temperature, H2SO4 concentration and leaching temperature can improve the solubility of K and Al. However, higher H2SO4 concentration and lower leaching temperature can improve the dissolution of Ga, which was beneficial to recovery of Ga. On the basis of the solubility difference in H2SO4, a two-stage process of selective acid leaching and alkali precipitation of Ga was proposed. The concentration of Ga was increased significantly from 54 g/t in alunite ore to 4100 g/t in alkali precipitation product. The major elements of Al and K in alunite were recovered as the alum crystal with a purity of 99.62%.
Źródło:
Physicochemical Problems of Mineral Processing; 2019, 55, 4; 1028-1038
1643-1049
2084-4735
Pojawia się w:
Physicochemical Problems of Mineral Processing
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of poly-energy implantation with H+ ions for additional energy levels formation in GaAs dedicated to photovoltaic cells
Autorzy:
Węgierek, Paweł
Pietraszek, Justyna
Powiązania:
https://bibliotekanauki.pl/articles/141449.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
energy levels
gallium arsenide
intermediate band solar cells
ion implantation
thermal admittance spectroscopy
Opis:
: The aim of this article is to present the results of research aimed at confirmation whether it is possible to form an intermediate band in GaAs implantation with H+ ions. The obtained results were discussed with particular emphasis on possible applications in the photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of the next generation of semiconductors solar cells. In progress of the research, a series of GaAs samples were subjected to poly-energy implantation of H+ ions, followed by high-temperature annealing. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency in order to localize deep energy levels, introduced by ion implantation. Activation energy ∆E was determined for additional energy levels resulting from the implantation of H+ ions. The method of determining the activation energy value is shown in Fig. 2 and the values read from it are σ0 = 10−9 (Ω·cm)−1 for 1000/T0 = 3.75 K−1 and σ1 = 1.34 × 10−4 (Ω·cm)−1 for 1000/T1 = 2.0 K−1 . As a result, we obtain ∆E ≈ 0.58 eV. It was possible to identify a single deep level in the sample of GaAs implanted with H+ ions. Subsequently, its location in the band gap was determined by estimating the value of ∆E. However, in order to confirm whether the intermediate band was actually formed, it is necessary to perform further analyses. In particular, it is necessary to implement a new analytical model, which takes into consideration the phenomena associated with the thermally activated mechanisms of carrier transport as it was described in [13]. Moreover, the influence of certain parameters of ion implantation, post-implantation treatment and testing conditions should also be considered.
Źródło:
Archives of Electrical Engineering; 2019, 68, 4; 925-931
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Active Damping in Series Connected Power Modules with Continuous Output Voltage
Autorzy:
Ulmer, Sabrina
Schullerus, Gernot
Sönmez, Ertugrul
Powiązania:
https://bibliotekanauki.pl/articles/1955969.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
power electronics
modularity
scalability
GaN
gallium nitride
active filter damping
Opis:
This paper presents a modular and scalable power electronics concept for motor control with continuous output voltage. In contrast to multilevel concepts, modules with continuous output voltage are connected in series. The continuous output voltage of each module is obtained by using gallium nitride (GaN) high electron motility transistor (HEMT)s as switches inside the modules with a switching frequency in the range between 500 kHz and 1 MHz. Due to this high switching frequency a LC filter is integrated into the module resulting in a continuous output voltage. A main topic of the paper is the active damping of this LC output filter for each module and the analysis of the series connection of the damping behaviour. The results are illustrated with simulations and measurements.
Źródło:
Power Electronics and Drives; 2021, 6, 41; 314-335
2451-0262
2543-4292
Pojawia się w:
Power Electronics and Drives
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Desorption of Argon Implanted into Gallium Arsenide
Autorzy:
Turek, Marcin
Droździel, Andrzej
Pyszniak, Krzysztof
Węgierek, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/2201837.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
thermal desorption spectroscopy
gallium arsenide
ion implantation
Opis:
Thermal desorption of Ar implanted with energies 150 keV and 100 keV with fluence 1×10^16 cm^-2 into GaAs is considered. A sudden release of Ar is observed in temperature range 1100 -1180 K as a single narrow peak in TDS (Thermal Desorption Spectroscopy) spectra. This is accompanied by a strong background signal from atmospheric Ar trapped in various parts of the spectrometer. Desorption peak shift analysis allows estimation of desorption activation energy values - these are 3.6 eV and 2.5 eV for implantation energies 150 keV and 100 keV, respectively. These results are comparable to that measured for Ar implanted into germanium target.
Źródło:
Advances in Science and Technology. Research Journal; 2022, 16, 4; 318--326
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Refractive index and salinity sensors by gallium-doped zinc oxide thin film coated on side-polished fibers
Autorzy:
Tien, Chuen-Lin
Mao, Hao-Sheng
Mao, Tzu-Chi
Powiązania:
https://bibliotekanauki.pl/articles/1835762.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
refractive index
thin film
side-polished fiber
lossy mode resonance
gallium-doped zinc oxide
Opis:
This work presents a high-sensitivity refractive index and salinity sensor by using fiber-optic side-polishing and electron-beam evaporation techniques. Thin film coated on the flat surface of side-polished fibers can generate a lossy mode resonance (LMR) effect. A gallium-doped zinc oxide (GZO) thin film was prepared by an electron-beam evaporation with the ion assisted deposition method. The residual thickness of the side-polished fiber was 76.5 μm, and GZO film thickness of 69 nm was deposited on the flat surface of the side-polished fiber to fabricate LMR-based fiber sensors. The variation in the optical spectrum of LMR-based fiber sensors was measured by different refractive index saline solutions. The LMR wavelength shift is caused by the refractive index change, which is nearly proportional to the salinity. The corresponding sensitivity of the proposed fiber-optic sensor was 3059 nm/RIU (refractive index unit) for the refractive index range of 1.333 to 1.398. To evaluate the sensitivity of LMR salinity sensors, the saline solution salinities of 3.6%, 7.3%, 10.9%, 14.6%, 18.2% and 21.9% were measured in this work. The experimental result shows that the sensitivity of the proposed salinity sensor is 9.94 nm/%.
Źródło:
Optica Applicata; 2021, 51, 1; 23-36
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs
Autorzy:
Taube, A.
Sochacki, M.
Szmidt, J.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/226802.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
gallium nitride
MOS-HEMT
high electron mobility
transistor
AlGaN
GaN
simulation
Opis:
The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 3; 253-258
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wpływ powłok HfO2 i Al2O3 na dynamikę sieci nanodrutów GaN. Analiza statystyczna wyników spektroskopii Ramana
Influence of HfO2 and Al2O3 Shells on Lattice Dynamics of GaN Nanowires. Statistical Analysis of the Results of Raman Spectroscopy
Autorzy:
Szymon, Radosław
Zielony, Eunika
Sobańska, Marta
Żytkiewicz, Zbigniew
Lipiński, Tomasz
Nowacki, Krzysztof
Powiązania:
https://bibliotekanauki.pl/chapters/28328178.pdf
Data publikacji:
2023-12-14
Wydawca:
Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
Tematy:
analiza statystyczna
azotek galu
nanodruty
rdzeń-powłoka
skaningowa mikroskopia elektronowa
spektroskopia Ramana
core-shell
gallium nitride
nanowires
Ramana spectroscopy
scanning electron microscopy
statistical analysis
Opis:
Rozwój nanotechnologii w przypadku związków półprzewodnikowych z grupy III-V oferuje nowe możliwości wytwarzania wydajniejszych urządzeń optoelektronicznych pracujących w zakresie światła UV. Ich przykładem są nanodruty rdzeń-powłoka na bazie azotku galu (GaN). Cechą nanodrutów jest duży stosunek powierzchni do objętości oraz wysoka jakość struktury krystalicznej. Badania nanostruktur wymagają odpowiedniego przystosowania metod charakteryzacji, których wykorzystanie napotyka ograniczenia technologiczne. Rozwiązaniem jest analiza danych uzyskiwanych podczas pomiarów i zastosowanie metod, które pozwolą potwierdzić występowanie istotnych statystycznie różnic, a także zapewnić odtwarzalność wyników. W niniejszym rozdziale zaproponowano wykorzystanie metod wnioskowania statystycznego w celu zweryfikowania występowania istotnych statystycznie różnic w częstościach wzbudzeń fononowych wyznaczanych na podstawie pomiarów widm Ramana. Pomiary ramanowskie i analizę danych przeprowadzono dla serii próbek nanodrutów typu rdzeń GaN – powłoka Al2O3 lub HfO2, otrzymanych na podłożu krzemowym. Zmierzone częstości wzbudzeń fononowych, w szczególności modu GaN E2high, poddano analizie, wykazując istotne statystycznie różnice pomiędzy próbkami o różnych grubościach powłok. Potwierdzono ich wpływ na właściwości strukturalne i dynamikę sieci krystalicznej nanodrutów. Pokazano również, że wykorzystanie podejścia statystycznego w analizie wyników ramanowskich istotnie zwiększa ich wiarygodność.
The development of nanotechnology of the III-V compounds semicon- ductors provides new opportunities for producing highly-efficient optoelectronic devices that operate in the UV light range. One example is the core-shell nanowires based on gallium nitride (GaN), which have high surface-to-volume ratio and high- quality crystalline structure. However, characterization of nanostructures requires the adaptation of appropriate techniques, which are limited by external factors. To overcome these limitations, data obtained from measurements must be analysed with methods which confirm statistically significant differences, as well as ensure the reproducibility of results. This chapter proposes using statistical inference methods to verify statistically significant differences in the frequencies of phonon excitations, determined with Raman spectra measurements. Raman measurements and data analysis were carried out for a series of GaN nanowires of GaN coated with Al2O3 or HfO2 shells, obtained on a silicon substrate. The analysis of phonon excitation frequencies, especially the GaN E2high mode, confirmed statistically sig- nificant differences between samples. The influence of the shells on the structural properties and crystal lattice dynamics of nanowires was also confirmed. Moreover, the study shows that using a statistical approach in the analysis of Raman results significantly improves their reliability.
Źródło:
Potencjał innowacyjny w inżynierii materiałowej i zarządzaniu produkcją; 69-80
9788371939457
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849000.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849019.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849057.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Lattice Damage and Recovery of Rare-Earth implanted Wide Bandgap Oxides
Autorzy:
Sarwar, Mahwish
Ratajczak, Renata
Ivanov, Vitalii
Mishra, Sushma
Turek, Marcin
Wierzbicka, Aleksandra
Woźniak, Wojciech
Guziewicz, Elżbieta
Powiązania:
https://bibliotekanauki.pl/articles/2204945.pdf
Data publikacji:
2022
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
wide bandgap oxides
zinc oxide
gallium oxide
rare earth
ion implantation
Rutherford backscattering spectrometry
low temperature photoluminescence
Opis:
Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3:RE or ZnO:RE show narrow emission lines in the visible, ultra-violet and infra-red region. Ion implantation is an attractive method to introduce dopant into the crystal lattice with an extraordinary control of the dopant ion composition and location, but it creates the lattice damage, which may render the dopant optically inactive. In this research work, we investigate the post-implantation crystal lattice damage of two matrices of wide-bandgap oxides, β-Ga2O3 and ZnO, implanted with rare-earth (RE) to a fluence of 5 x 10^14, 1 x 10^15 and 3 x 10^15 atoms/cm^2, and post-growth annealed in Ar and O2 atmosphere, respectively. The effect of implantation and annealing on both crystal lattices was investigated by channeling Rutherford backscattering spectrometry (RBS/C) technique. The level of crystal lattice damage caused by implantation with the same RE fluences in the case of β-Ga2O3 seems to be higher than in the case of ZnO. Low temperature photoluminescence was used to investigate the optical activation of RE in both matrices after performed annealing.
Źródło:
Advances in Science and Technology. Research Journal; 2022, 16, 5; 147--154
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cyclotron production of 68Ga via proton-induced reaction on 68Zn target
Autorzy:
Sadeghi, M.
Kakavand, T.
Rajabifar, S.
Mokhtari, L.
Rahimi-Nezhad, A.
Powiązania:
https://bibliotekanauki.pl/articles/146448.pdf
Data publikacji:
2009
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
production
gallium-68
zinc-68
PET
cyclotron
Opis:
68Ga is an important positron-emitting radionuclide for positron emission tomography. In this work 68Ga was produced via the 68Zn(p,n)68Ga nuclear reaction. 68Zn electrodeposition on a copper substrate was carried out by alkaline cyanide baths. 68Zn target was irradiated with a 15 MeV proton beam and a 150 mi A current. The production yield achieved was 136 mCi/ mi Aźh (5.032 GBq/mi Aźh). 68Ga was separated from zinc and copper by a combination of cation exchange chromatography and liquid-liquid extraction methods.
Źródło:
Nukleonika; 2009, 54, 1; 25-28
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production and quality control of 66Ga radionuclide
Autorzy:
Sabet, M.
Rowshanfarzad, P.
Jalilian, A.
Ensaf, M.
Rajamand, A.
Powiązania:
https://bibliotekanauki.pl/articles/146278.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
gallium-66
cyclotron
radiochemical separation
target recovery
Opis:
The purpose of this study was to develop the required targetry and radiochemical methods for production of 66Ga, according to its increasing applications in various fields of science. The 66Zn(p,n)66Ga reaction was selected as the best choice for the production of 66Ga. The targets were bombarded with 15 MeV protons from cyclotron (IBA-Cyclone 30) at the Nuclear Research Center for Agriculture and Medicine (NRCAM) with a current of 180 mA for 67 min. ALICE and SRIM (Stopping and Range of Ions in Matter) nuclear codes were used to predict the optimum energy and target thickness. Targets were prepared by electroplating 95.73% enriched 66Zn on a copper backing. Chemical processing was performed by a no-carrier-added method consisting of ion exchange chromatography and liquid-liquid extraction. Anion exchange chromatography was also used for the recovery of target material. Quality control of the product was carried out in two steps of chemical and radionuclide purity control. The activity of 66Ga was 82.12 GBq at EOB and the production yield was 410.6 MBq/mAh. The radiochemical separation yield was 93% and the yield of chemical recovery of the target material was 97%. Quality control tests showed a radionuclide purity higher than 97% and the amounts of chemical impurities were in accordance with the United States Pharmacopoeiae levels.
Źródło:
Nukleonika; 2006, 51, 3; 147-154
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and evaluation of a [66Ga]gallium chitosan complex in fibrosarcoma bearing animal models
Autorzy:
Pourjavadi, A.
Akhlaghi, M.
Jalilian, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/147067.pdf
Data publikacji:
2011
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
chitosan
gallium-66
internal radiotherapy
fibrosarcoma
intratumoral injection
Opis:
[66Ga]gallium chitosan complex was prepared with a high radiochemical purity (greater than 99%) in dilute acetic acid solution. The radiochemical purity of [66Ga]gallium chitosan complex was checked by using paper chromatography technique. The prepared complex solution was injected intratumoral to fibrosarcoma-bearing mice and the leakage of radioactivity from injection site was investigated. Approximately, 85.4% of the injected dose was retained in the injection site 54 h after injection and most of the leaked radioactivity was accumulated in the blood, liver (0.5%) and lung (6.5%).
Źródło:
Nukleonika; 2011, 56, 1; 35-40
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of photoconductive semiconductor switch parameters with selected switch devices in power systems
Autorzy:
Piwowarski, Karol
Powiązania:
https://bibliotekanauki.pl/articles/1818252.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
electronic devices
electric switch
photoconductive semiconductor switches
gallium phosphide
Opis:
Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 74--81
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 37

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies