Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "UJ" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 55
Tytuł:
Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:
Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy
Autorzy:
Zubiaga, A.
Tuomisto, F.
Zúñiga-Pérez, J.
Muñoz-San José, V.
Powiązania:
https://bibliotekanauki.pl/articles/1811964.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
68.55.Ln
68.37.-d
78.70.Bj
Opis:
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high $10^{17} cm^{-3}$ to low $10^{17} cm^{-3}$) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about $2×10^{17} cm^{-3}$ in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1257-1264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:
Zubel, I.
Kramkowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807532.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.Hn
61.72.uj
64.70.kg
Opis:
In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-105-S-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of ZnO Nanowires Doped with Magnesium
Autorzy:
Zhuang, H.
Wang, J.
Liu, H.
Li, J.
Xu, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505046.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.Km
61.72.uj
81.15.Gh
78.67.-n
Opis:
ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 819-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Carbon Nanoparticles Morphology on Physical Properties of Polymer Composites
Autorzy:
Wróblewski, G.
Słoma, M.
Janczak, D.
Młożniak, A.
Jakubowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1197547.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.uj
81.05.ue
81.05.uf
61.48.De
Opis:
The paper presents influence of diverse shapes and dimensions of carbon nanostructures on physical properties of polymer composites. Graphene nanoplatelets, carbon nanotubes, graphite nanofibers, and graphite microflakes have been investigated as fillers in polymethacrylate resin. Layers were deposited with printing techniques used in printed electronics technology such as screen printing and spray coating, both elaborated in our earlier works. Different sets of measurements have been performed for obtained layers with particular carbon nanofillers. Thickness and topography have been examined using optical profilometer. Morphology of nanostructures has been observed with scanning electron microscope. Moreover, sheet resistivity and optical transmission in visible wavelength have been measured. Also mechanical properties have been characterized for each polymer composite by conducting fatigue test which consisted of multiple bending cycles.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 861-863
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1382904.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the outcome of the research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony of resistivities ρ=0.01 Ω cm and ρ=10 Ω cm, strongly defected by the implantation of $Ne^{+}$ ions (D=1.5 × $10^{14}$ $cm^{-2}$, E=100 keV). On the basis of results obtained for samples annealed at the temperature $T_{a}$=598 K and measured at the testing temperature $T_{p}$=298 K and frequency f=1 MHz it was possible to carry out an analysis of mechanisms of electric conduction depending on the type and concentration of dopant. Obtained results confirmed the occurrence of hopping conductivity mechanism in strongly defected semiconductors, which is typical for high frequency values.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1392-1395
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Temperature on Electrical Parameters of GaAs in the Aspect of Applications in Photovoltaics
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402217.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article describes the results of the research on thermal stability of electrical parameters of n-type gallium arsenide doped with tellurium, defected by ion implantation, measured at the operating temperature ranging from 77 K to 373 K. The aim of the work is to investigate the character of changes in the values of such electrical parameters as resistivity, capacity and loss tangent of the tested GaAs samples, exposed to different thermal conditions. Temperature dependences analyzed in the paper could be taken as a basis to formulate general speculations concerning potential applications of the tested material as a substrate in the process of photovoltaic cells production. The phenomenon of conversion of solar energy into electricity is strongly connected with electrical properties of photovoltaic cell substrate material and its internal structure. Moreover, the efficiency of photoconversion is affected by such factors as charge carrier lifetime distribution and diffusion length in the base material. Therefore, it is necessary to confirm what is the character of the influence of operating temperature on the electrical parameters of GaAs and what modification could be introduced in the material in order to increase the efficiency of photoconversion.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with $Ne^{++}$ Neon Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504000.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of $Ne^{++}$ neon ions. An analysis of electrical properties recorded at the annealing temperature of $T_{a}$ = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 122-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with $Ne^{+}$ Ions
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400487.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of $Ne^{+}$ ions (D = $1.5 \times 10^{14} cm^{-2}$, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of $T_{a}$ = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 948-951
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402240.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 943-945
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rozwój poglądów na projektowanie XIX-wiecznych szpitali akademickich i jego wpływ na powstanie I Kliniki Chirurgicznej UJ w Krakowie
Autorzy:
Waszczyszyn, E.
Powiązania:
https://bibliotekanauki.pl/articles/217484.pdf
Data publikacji:
2007
Wydawca:
Stowarzyszenie Konserwatorów Zabytków
Tematy:
projektowanie
szpital
I Klinika Chirurgiczna UJ w Krakowie
designing
hospital
I Department of Surgery Jagiellonian University in Cracow
Opis:
Klinika z naukowego uważana stanowiska, dalszych zaiste sięga celów nad zamiary pospolitych szpitali. Wyższe i liczniejsze niesie pożytki i dlatego też rozmaitych wymaga warunków, bez których nominalną tylko posiada wartość i próżnym chyba pyszni się tytułem. W szeregu nauk lekarskich instytucje kliniczne ostatni zajmują szczebel, do którego dążą wszystkie poprzednie dyscypliny teoretyczne.
Department of scientific regarded position, further indeed reaches the purpose of the common intentions hospitals. Higher and carries numerous benefits and therefore requires different conditions, without which only has a nominal value and vain unless the proud title. In a series of clinical medical sciences institutions occupy the last rung pursued by all previous theoretical discipline.
Źródło:
Wiadomości Konserwatorskie; 2007, 22; 47-55
0860-2395
2544-8870
Pojawia się w:
Wiadomości Konserwatorskie
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
Autorzy:
Vinciūnaitė, V.
Grigonis, A.
Medvid, A.
Zabels, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400457.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.Eb
81.05.uj
81.15.Jj
82.80.Gk
Opis:
Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene-hydrogen gas mixtures. The films were irradiated with a nanosecond Nd:YAG laser working at the first harmonics ($λ_1$=1064 nm), the fourth harmonics ($λ_4$=266 nm) or with a $Nd:YVO_4$ laser working at the third harmonic ($λ_3$=355 nm). The films were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength $λ_1$=1064 nm leads to graphitization and formation of the silicon carbide, because of the silicon substrate decomposition. The samples were strongly modified after the irradiation by $λ_3$=355 nm - the thickness of the films decreased, and silicon carbide was formed. It was observed that nano-structured materials (e.g. carbon nano-onions, nc-diamond) were formed after the irradiation by $λ_4$=266 nm.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 874-876
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studia teologiczne Franciszka Karola Blachnickiego w Uniwersytecie Jagiellońskim 1945-1950 oraz początki koncepcji świętości w jego teologii moralnej i pastoralnej
Franciszek Karol Blachnicki’s theological studies at the Jagiellonian University 1945-1950 and the beginning of conception of sainthood (holiness) in his moral- and pastoral theology
Autorzy:
Tytko, Marek M.
Powiązania:
https://bibliotekanauki.pl/articles/1039663.pdf
Data publikacji:
2020-12-13
Wydawca:
Katolicki Uniwersytet Lubelski Jana Pawła II
Tematy:
UJ
Kraków
teologia
biografia
Krakow
theology
biography
Opis:
The article concerns rev. Franciszek Karol Blachnicki (born 1920, died 1987). The paper shows early period of his life, it focus on theological studies, which took place at the Jagiellonian University in years 1945-1950. The author presents unknown (inedited) documents preserved in the Archives of the Jagiellonian University, archival records concerning his education according to the program of the theological studying in the Faculty of Theology and evaluation of his master’s work written by Blachnicki in 1950 year, concerning the essence of sainthood (holiness). The author of the article makes a hypothesis on theme relations between theological, ethical, pedagogical conceptions of Blachnicki’s masters and his own theological, ethical, pedagogical conceptions.
Źródło:
Archiwa, Biblioteki i Muzea Kościelne; 2009, 91; 343-354
0518-3766
2545-3491
Pojawia się w:
Archiwa, Biblioteki i Muzea Kościelne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Plasma Ion Source with an Internal Evaporator
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/1504137.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current ($I_{a}$ = 1.2 A). The currents of 50 μA $(Al^{+})$ and 70 μA $(Bi^{+})$ were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 184-187
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/1383005.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1388-1391
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 55

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies