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Wyświetlanie 1-15 z 55
Tytuł:
Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure
Autorzy:
Pietnoczka, A.
Bacewicz, R.
Slupinski, T.
Antonowicz, J.
Wei, Su-Huai
Powiązania:
https://bibliotekanauki.pl/articles/1431547.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cj
61.72.uj
Opis:
The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional $Te_{As}$ model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Cu Negative Ion Implantation on Physical Properties of $Zn_{1-x}Mn_xTe$ Films
Autorzy:
Pogrebnjak, A.
Shypylenko, A.
Amekura, H.
Takeda, Y.
Opanasyuk, A.
Kurbatov, D.
Kolotova, I.
Klymov, O.
Kozak, C.
Powiązania:
https://bibliotekanauki.pl/articles/1400485.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.72.uj
Opis:
The paper deals with the investigations of structural properties of $Zn_{1-x}Mn_xTe$ films, which were fabricated under various deposition conditions using the thermal evaporation method in a closed volume. The surface morphology of the samples was studied, the phase analysis of their structures was performed, the elemental analysis of the films and the crystal lattice constant were investigated. The texture perfection of the films before and after copper ion implantation was evaluated.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 939-942
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Stress on Defect Transformation in $B^{+}$ and $Ag^{+}$ Implanted HgCdTe/CdZnTe Structures
Autorzy:
Savkina, R.
Smirnov, A.
Gudymenko, A.
Kladko, V.
Sizov, F.
Frigeri, C.
Powiązania:
https://bibliotekanauki.pl/articles/1363515.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
81.16.Rf
Opis:
The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface regions of (111) $Hg_{1-x}Cd_{x}Te$ (x = 0.223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses $(B^{+}$ and $Ag^{+})$ leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum mechanical stresses differing by two orders of magnitude (1.4 × $10^3$ Pa and 2.2 × $10^5$ Pa, respectively). The structural properties of the $Hg_{1-x}Cd_{x}Te$ epilayers were investigated using X-ray high-resolution reciprocal space mapping.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1003-1005
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studia teologiczne Franciszka Karola Blachnickiego w Uniwersytecie Jagiellońskim 1945-1950 oraz początki koncepcji świętości w jego teologii moralnej i pastoralnej
Franciszek Karol Blachnicki’s theological studies at the Jagiellonian University 1945-1950 and the beginning of conception of sainthood (holiness) in his moral- and pastoral theology
Autorzy:
Tytko, Marek M.
Powiązania:
https://bibliotekanauki.pl/articles/1039663.pdf
Data publikacji:
2020-12-13
Wydawca:
Katolicki Uniwersytet Lubelski Jana Pawła II
Tematy:
UJ
Kraków
teologia
biografia
Krakow
theology
biography
Opis:
The article concerns rev. Franciszek Karol Blachnicki (born 1920, died 1987). The paper shows early period of his life, it focus on theological studies, which took place at the Jagiellonian University in years 1945-1950. The author presents unknown (inedited) documents preserved in the Archives of the Jagiellonian University, archival records concerning his education according to the program of the theological studying in the Faculty of Theology and evaluation of his master’s work written by Blachnicki in 1950 year, concerning the essence of sainthood (holiness). The author of the article makes a hypothesis on theme relations between theological, ethical, pedagogical conceptions of Blachnicki’s masters and his own theological, ethical, pedagogical conceptions.
Źródło:
Archiwa, Biblioteki i Muzea Kościelne; 2009, 91; 343-354
0518-3766
2545-3491
Pojawia się w:
Archiwa, Biblioteki i Muzea Kościelne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deposition and Characterization of CdS, CuS and ZnS Thin Films Deposited by SILAR Method
Autorzy:
Guzeldir, B.
Saglam, M.
Ates, A.
Powiązania:
https://bibliotekanauki.pl/articles/1490738.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.05.cp
61.72.uj
Opis:
Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si(111) substrate by successive ionic layer adsorption and reaction method at room temperature. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction, scanning electronic microscope and energy dispersive X-ray analysis methods. The films were polycrystalline and showed preferred orientation. The surface morphology of these films looked relatively smooth and homogeneous in the scanning electron microscope image. The energy dispersive X-ray analysis spectra showed that the expected elements exist in the thin films.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 33-35
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with $H^{+}$ Ions
Autorzy:
Żukowski, P.
Węgierek, P.
Billewicz, P.
Kołtunowicz, T.
Komarov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1504001.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with $H^{+}$ ions, depending on alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen temperature ÷ 373 K) and the temperature of 15 min isochronous annealing (293 ÷ 663 K). It has been found that the obtained dependences σ ($T_{p},$ f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics σ ($T_{p}$, f) have also been discussed.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 125-128
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function of Native Oxide on Ion-Implanted GaAs
Autorzy:
Kulik, M.
Rzodkiewicz, W.
Gluba, Ł.
Kobzev, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400489.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.20.Ci
78.20.-e
Opis:
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with $Ne^{+}$, $Al^{+}$, $Ar^{+}$, or $In^{+}$ ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of $1 \times 10^{16} cm^{-2}$ at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 956-959
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Powiązania:
https://bibliotekanauki.pl/articles/1402239.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 939-942
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research on Thermal Stability of Electrical Parameters of Silicon Used in PV Cells Production Process
Autorzy:
Węgierek, P.
Billewicz, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402240.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
61.72.Cc
72.80.Ey
Opis:
Considering the results of recent research, it is possible to state that the problem of thermal stability of electrical parameters of silicon is very important in the context of efficiency of commonly used photovoltaic cells. Subsequent investigations confirmed that the efficiency of photovoltaic cells is strongly influenced by active defects of silicon crystal lattice. Those defects, arising in the process of photovoltaic cells base material preparation, are responsible for changes in the values of conductivity and activation energy of the tested material. Taking this into consideration, it is reasonable to carry out research oriented at experimental verification of the influence of both operating temperature on the electrical parameters of silicon and annealing temperature on the distribution of radiation defects in the silicon substrate used in the production of photovoltaic cells. The main purpose of this work is a comparative analysis of dependences of electrical parameters of silicon on temperature. The article presents the results of the research on resistivity and capacity of silicon samples (doped with boron and phosphorus) whose structure was modified by the ion implantation process.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 943-945
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Free Carrier Scattering in Metallic n-GaAs in the Presence of Static Lattice Distortions Due to a Partial Chemical Order of Impurities
Autorzy:
Słupiński, T.
Molas, M.
Papierska, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791426.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.sd
61.72.uj
72.20.-i
Opis:
Simple electric transport versus T = 20-400 K in metallic n-GaAs annealed single crystals with Te impurity concentration ∿(0.4-1.7) × $10^{19} cm^{-3}$, which is above the equilibrium doping limit, is reported and compared with modern theory of electron mobility in degenerated n-GaAs by Szmyd, Hanna, Majerfeld. An overcome of the equilibrium doping limit in annealed n-GaAs is manifested by a lowered electrical activation of Te donors and by an onset of ≈ 0.1-1 μm regions of local strain in the crystal lattice known from high resolution X-ray studies. These preliminary results of transport show that the electron mobility μ(T) measured for n-GaAs with local strains is not consistent with predictions of Szmyd et al. model for any degree of compensation assumed. This surprising result indicates that electric transport in materials above the equilibrium doping limit is not well understood assuming the scattering by ionized impurities. The nature of defects responsible for an observed strong reduction of free carrier concentration (here ≈ 80%) in annealed heavily doped n-GaAs seems not to be related with electrical compensation. We point here at the possible role of effects of free carrier scattering due to static lattice distortions (local strains) related to a chemical aggregation of impurity atoms. We also notice that transport in metallic n-GaAs with local strains shows features similar to a weak localization $σ_{xx}$ ∝ log T.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 979-982
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Interaction of Surfactant Molecules with Si(hkl) Planes on the Basis of Anisotropic Etching in Alkaline Solutions
Autorzy:
Zubel, I.
Kramkowska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807532.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.Hn
61.72.uj
64.70.kg
Opis:
In the paper, measurements of surface tension of solutions used for silicon etching and results of etching in the solutions are presented. Based on the obtained results, the analysis of interactions of surfactants with differently oriented silicon planes has been carried out.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-105-S-107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions
Autorzy:
Rzodkiewicz, W.
Kulik, M.
Pyszniak, K.
Kobzev, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807545.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.66.Qn
82.80.Yc
Opis:
The semi-isolating GaAs (100) samples irradiated with fluence 3 × $10^{15}$ ions/$cm^{2}$ of $In^{+}$ ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-129-S-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
Autorzy:
Radović, M.
Dohčević-Mitrović, Z.
Paunović, N.
Šćepanović, M.
Matović, B.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1807838.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.30.-j
75.50.Tt
Opis:
We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 84-87
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Production of $Mo^{+}$ Beams Using an Arc Discharge Ion Source
Autorzy:
Turek, M.
Droździel, A.
Pyszniak, K.
Prucnal, S.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/1383005.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.77.Ka
34.80.Dp
61.72.uj
Opis:
A new method of $Mo^{+}$ ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of $CCl_4$ (or $CHCl_3$) vapor and air was used as the feeding substance. The separated $Mo^{+}$ beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1388-1391
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 55

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