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Wyszukujesz frazę "HgCdTe" wg kryterium: Temat


Tytuł:
HgCdTe energy gap determination from photoluminescence and spectral response measurements
Autorzy:
Murawski, Krzysztof
Kopytko, Małgorzata
Madejczyk, Paweł
Majkowycz, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2204344.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
infrared detectors
HgCdTe
photoluminescence
spectral responsivity
semiconductor energy gap
Opis:
The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap. In most of the published reports, the photoluminescence spectrum containing multiple peaks is analyzed using a Gaussian fit to a particular peak. However, the determination of the peak position deviates from the energy gap value. Consequently, it may seem that a blue shift with increasing temperature becomes apparent. In our approach, the main peak was fitted with the expression proportional to the product of the joint density of states and the Boltzmann distribution function. The energy gap determined on this basis coincides in the entire temperature range with the theoretical Hansen dependence for the assumed Cd molar composition of the active layer. In addition, the result coincides well with the bandgap energy determined on the basis of the cut-off wavelength at which the detector response drops to 50% of the peak value.
Źródło:
Metrology and Measurement Systems; 2023, 30, 1; 183--194
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MCT heterostructures for higher operating temperature infrared detectors designed in Poland
Autorzy:
Madejczyk, Paweł
Gawron, Waldemar
Sobieski, Jan
Martyniuk, Piotr
Rutkowski, Jarosław
Powiązania:
https://bibliotekanauki.pl/articles/2204223.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
MCT
HgCdTe
metal organic chemical vapour deposition
infrared detectors
higher operating temperature
Opis:
This paper presents examples of infrared detectors with mercury cadmium telluride elaborated at the Institute of Applied Physics, Military University of Technology and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 μm to 14 μm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode
Autorzy:
Kopytko, Małgorzata
Powiązania:
https://bibliotekanauki.pl/articles/2204220.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
HgCdTe photodiode
non-equilibrium conditions
fully-depleted photodiode
minority carrier lifetime
generation rates
Opis:
The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·10¹⁵ cm¯³, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10¯¹ A/cm² was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144548
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical study of back-to-back avalanche photodiodes for dual-band infrared applications
Autorzy:
Manyk, Tetiana
Majkowycz, Kinga
Rutkowski, Jarosław
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2204171.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
IR detectors
HgCdTe avalanche photodiodes
excess noise
gain
dual-band detectors
Opis:
The dual-band avalanche photodiode (APD) detector based on a HgCdTe material system was designed and analysed in detail numerically. A theoretical analysis of the two-colour APD intended for the mid wavelength infrared (MWIR) and long wavelength infrared (LWIR) ranges was conducted. The main purpose of the work was to indicate an approach to select APD structure parameters to achieve the best performance at high operating temperatures (HOT). The numerical simulations were performed by Crosslight numerical APSYS platform which is designed to simulate semiconductor optoelectronic devices. The current-voltage characteristics, current gain, and excess noise analysis at temperature T = 230 K vs. applied voltage for MWIR (U = 15 V) and LWIR (U = –6 V) ranges were performed. The influence of low and high doping in both active layers and barrier on the current gain and excess noise is shown. It was presented that an increase of the APD active layer doping leads to an increase in the photocurrent gain in the LWIR detector and a decrease in the MWIR device. The dark current and photocurrent gains were compared. Photocurrent gain is higher in both spectral ranges.
Źródło:
Opto-Electronics Review; 2023, 31, 2; art. no. e145093
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Corrigendum to “Van der Waals materials for HOT infrared detectors : a review” [Opto-Electronics Review 30 (2022) e140551]
Autorzy:
Rogalski, Antoni
Powiązania:
https://bibliotekanauki.pl/articles/2063909.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
transition metal dichalcogenides photodetectors
HgCdTe photodiodes
high operating temperature infrared detectors
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141441
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Autorzy:
Manyk, Tetiana
Rutkowski, Jarosław
Madejczyk, Paweł
Gawron, Waldemar
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2074201.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
HgCdTe
MWIR detectors
dark current
I-V characteristics
recombination
Opis:
A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141596
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Van der Waals materials for HOT infrared detectors : a review
Autorzy:
Rogalski, Antoni
Powiązania:
https://bibliotekanauki.pl/articles/2063905.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
transition metal dichalcogenides photodetectors
HgCdTe photodiodes
high operating temperature infrared detectors
Opis:
In the last decade several papers have announced usefulness of two-dimensional materials for high operating temperature photodetectors covering long wavelength infrared spectral region. Transition metal dichalcogenide photodetectors, such as PdSe₂/MoS₂ and WS₂/HfS₂ heterojunctions, have been shown to achieve record detectivities at room temperature (higher than HgCdTe photodiodes). Under these circumstances, it is reasonable to consider the advantages and disadvantages of two-dimensional materials for infrared detection. This review attempts to answer the question thus posed.
Źródło:
Opto-Electronics Review; 2022, 30, 1; art. no. e140551
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Krzysztof
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818197.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Kkrzysztor
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818200.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
2D material infrared and terahertz detectors : status and outlook
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818243.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
terahertz detectors
infrared detectors
graphene
BLIP performance
HgCdTe photodiodes
Opis:
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 107--154
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
2D material infrared and terahertz detectors : status and outlook
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818245.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
terahertz detectors
infrared detectors
graphene
BLIP performance
HgCdTe photodiodes
Opis:
Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 107--154
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
Autorzy:
Rogalski, Antoni
Kopytko, Małgorzata
Martyniuk, Piotr
Hu, Weida
Powiązania:
https://bibliotekanauki.pl/articles/1818250.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
2D material photodetectors
HOT infrared detectors
HgCdTe photodiodes
p-i-n depleted photodiodes
BLIP performance
Opis:
The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
Źródło:
Opto-Electronics Review; 2020, 28, 2; 82--92
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
Autorzy:
Rogalski, A.
Kopytko, M.
Martyniuk, P.
Hu, W.
Powiązania:
https://bibliotekanauki.pl/articles/201444.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
colloidal quantum dot infrared photodetectors
HOT infrared detectors
HgCdTe photodiodes
p-i-n depleted photodiodes
BLIP performance
Opis:
In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 845-855
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Response Hot (111) HGCDTE MWIR Detectors
Autorzy:
Grodecki, K.
Martyniuk, P.
Kopytko, M.
Kowalewski, A.
Stępień, D.
Kębłowski, A.
Piotrowski, A.
Piotrowski, J.
Gawron, W.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/221254.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
HgCdTe
MWIR
photodetector
response time
Opis:
In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N+pP+ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 1012 cm Hz1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
Źródło:
Metrology and Measurement Systems; 2017, 24, 3; 509-514
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response - Operating Under Zero Bias Conditions
Autorzy:
Martyniuk, P.
Kopytko, M.
Madejczyk, P.
Henig, A.
Grodecki, K.
Gawron, W.
Rutkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/221111.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
response time
unbiased condition
HgCdTe
LWIR
higher operating temperature
Opis:
The paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd = 0.19) HgCdTe detector for 300 K was calculated at a level of τs ~ 1 ns for zero bias condition, while the detectivity - at a level of D* ~ 109 cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+ barrier layer play a critical role in order to reach τs ≤ 1 ns. An extra series resistance related to the processing (RS+ in a range 5-10 Ω) increased the response time more than two times (τs ~ 2.3 ns).
Źródło:
Metrology and Measurement Systems; 2017, 24, 4; 729-738
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł

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