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Wyświetlanie 1-15 z 145
Tytuł:
Ti-Induced Ferromagnetism and the Specific Heat of $CaTi_xRu_{1-x}O_3$ (x=0, 0.005, 0.03)
Autorzy:
Zorkovská, A.
Baran, A.
Kajňaková, M.
Feher, A.
Šebek, J.
Šantavá, E.
Bradarić, I.
Powiązania:
https://bibliotekanauki.pl/articles/1813685.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Pq
75.40.Cx
72.80.Ga
Opis:
The influence of Ti substitution on the specific heat of the $CaTi_xRu_{1-x}O_3$ system at low concentrations x=0, 0.005, and 0.03 was studied in the temperature range of 2-300 K at magnetic fields up to 9 T. Small peak was revealed in the C/T vs. $T^2$ dependence at around 3 K, which are field sensitive (the electronic specific heat coefficient γlinearly decreases with the increase in magnetic field), and might be connected to some kind of magnetic ordering. The coefficient γis suppressed also by Ti substitution.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 355-358
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GA Among Giants. Gans’s Scene of Language and Culture Origin in Reference to Cassirer’s and Heidegger’s Visions of the Human
Autorzy:
Złocka-Dąbrowska, Magdalena
Powiązania:
https://bibliotekanauki.pl/articles/1186434.pdf
Data publikacji:
2020
Wydawca:
Uniwersytet Kardynała Stefana Wyszyńskiego w Warszawie
Tematy:
Eric Gans
GA
Cassirer
Heidegger
scene of origin
representation
language
culture
Opis:
This essay situates Eric Gans’s Generative Anthropology (GA) within Ernst Cassirer’s and Martin Heidegger’s intricate ontologies and validates GA as an applied ontology of language and culture. First, I will follow Gans’s suggestions for placing GA within a philosophical context, in particular, in terms of his situating of GA as a response to Heidegger’s Being and Time. I will then present Gans’s central concept of GA – the rise of language/ culture as the origin of the ‘human as human’ – a way of linking Gans’s system of representation with Cassirer’s system of symbolic forms. The description of the main components of Gans’s ‘scene’, namely: language, sign, community and violence, as responding to Cassirer’s and Heidegger’s respective understandings, will lead us to symbolic representation as opposed to a phenomenology that views forms merely as limitations for Being. I propose a mediating position between the competing claims of Cassirer and Heidegger, respectively, in Gans’s originary thinking, in the ‘explosion of language’ that allows the hermeneutics of the language of being (Dasein) to regain its presence.
Źródło:
Załącznik Kulturoznawczy; 2020, 7; 37-61
2392-2338
Pojawia się w:
Załącznik Kulturoznawczy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Levels Induced by CdTe/ZnTe Quantum Dots
Autorzy:
Zielony, E.
Placzek-Popko, E.
Roznicka, A.
Gumienny, Z.
Szatkowski, J.
Dyba, P.
Pacuski, W.
Kruse, C.
Hommel, D.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048061.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-level defects related with the presence of quantum dots. The capacitance-voltage (C-V) and deep level transient spectroscopy measurements were used to investigate the samples. A reference ZnTe sample (without dots) was also studied for comparison. Both samples were grown by molecular beam epitaxy technique on the n-type GaAs substrate. The quantum dots were formed by a Zn-induced reorganization of a thin CdTe layer. The presence of quantum dot formation was confirmed by micro-photoluminescence measurements. The deep level transient spectra for both samples are complex. In order to characterize individual contributions to the deep level transient spectra the latter have been simulated by separated Gaussian components [1]. The results of the deep level transient spectroscopy measurements yield the conclusion that the same defects are present in both materials but there is an increased concentration of the defects in the quantum dot structures. No deep level associated directly with the quantum dot confinement has been identified.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 630-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Traps in ZnTe with CdTe Quantum Dots
Autorzy:
Zielony, E.
Płaczek-Popko, E.
Gumienny, Z.
Trzmiel, J.
Karczewski, G.
Guziewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791335.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.21.La
73.20.Hb
Opis:
In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 885-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Oxygen Deficient Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{3-δ}$
Autorzy:
Zhang, Y. F.
Sasaki, S.
Yanagisawa, O.
Izumi, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047221.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ga
75.60.-d
75.70.Rf
81.40.Rs
Opis:
We studied magnetic properties of perovskite-type Y$\text{}_{0.33}$Sr$\text{}_{0.67}$ CoO$\text{}_{2.614}$ and Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{2.707}$ prepared under different sintered temperatures at 1250ºC and 1100ºC, respectively. A dc magnetization jump associated with a large thermal hysteresis around 180 K was found in Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{2.614}$, which indicates a kind of magnetic memory effect. On the other hand, Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{2.707}$ shows a larger magnetization with a small magnetization jump around 200 K and lower Curie temperature than those of Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{2.614}$. Rich Co$\text{}^{3+}$ ions in the low temperature sintered Y$\text{}_{0.33}$Sr$\text{}_{0.67}$CoO$\text{}_{2.707}$ possibly introduce large magnetization and high magnetization jump temperature. This may be coming from a surface/volume effect of Co$\text{}^{3+}$ ions appearing in the polycrystalline sample prepared at low temperature. The ferromagnetism resulted from the different surface/volume ratio contributes to a part of magnetization and may result in the change of the Curie temperature.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 79-86
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
Autorzy:
Żakrzewski, A. K.
Dobaczewski, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934051.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
Opis:
N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 961-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport in Submicron Wires of Semiconductors
Autorzy:
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1947015.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Rn
73.20.Fz
73.61.Ga
75.50.Pp
Opis:
We review the methods of fabrication and transport properties of submicron II-VI, IV-VI and III-V semiconductor wires. Devices were prepared by electron-beam lithography and used for detailed magnetotransport studies, carried out at low (down to 30 mK) temperatures. We discuss a number of novel features obtained in ballistic, diffusive and localized transport regimes. In particular, we describe the universal conductance fluctuations for semimagnetic materials (CdMnTe) and discuss the edge channel transport for PbTe, PbSe and GaAs/GaAlAs systems.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 691-701
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Applying artificial intelligence algorithms in MOBA games
Autorzy:
Wiśniewski, M.
Niewiadomski, A.
Powiązania:
https://bibliotekanauki.pl/articles/92952.pdf
Data publikacji:
2016
Wydawca:
Uniwersytet Przyrodniczo-Humanistyczny w Siedlcach
Tematy:
multiplayer online battle arena
MOBA
artificial intelligence
AI
genetic algorithm
GA
computer game
computer game agents
bots
Opis:
Multiplayer Online Battle Arena games focus mainly on struggles between two teams of players. An increasing level of cyberbullying [1] discourages new players from the game and they often chose a different option, that is, a match against opponents controlled by the computer. The behavior of artificial foes can be dynamically fitted to user’s needs, in particular with regard to the difficulty of the game. In this paper we explore different approaches to provide an intelligent behavior of bots basing on more human-like combat predictions rather than instant, scripted behaviors.
Źródło:
Studia Informatica : systems and information technology; 2016, 1-2(20); 53-64
1731-2264
Pojawia się w:
Studia Informatica : systems and information technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Adaptation of Evolutionary Algorithms for Decision Making on Building Construction Engineering (TSP Problem)
Autorzy:
Wazirali, R. A.
Alzughaibi, A. D.
Chaczko, Z.
Powiązania:
https://bibliotekanauki.pl/articles/226730.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
TSP
genetic algorithms
GA
support vector machines
SVM
Opis:
The report revolve on building construction engineering and management, in which there are a lot of requirements such as well supervision and accuracy and being in position to forecast uncertainties that may arise and mechanisms to solve them. It also focuses on the way the building and construction can minimise the cost of building and wastages of materials. The project will be based of heuristic methods of Artificial Intelligence (AI). There are various evolution methods, but report focus on two experiments Pattern Recognition and Travelling Salesman Problem (TSP). The Pattern Recognition focuses Evolutionary Support Vector Machine Inference System for Construction Management. The construction is very dynamic are has a lot of uncertainties, no exact data this implies that the inference should change according to the environment so that it can fit the reality, therefore there a need of Support Vector Machine Inference System to solve these problems. TSP focus on reducing cost of building construction engineering and also reduces material wastages, through its principals of finding the minimum cost path of the salesman.
Źródło:
International Journal of Electronics and Telecommunications; 2014, 60, 1; 125-128
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of soft-sensing model for ash content prediction of flotation tailings by image features tailings based on GA-SVMR
Autorzy:
Wang, Guanghui
He, Ting
Kuang, Yali
Lin, Zhe
Powiązania:
https://bibliotekanauki.pl/articles/1449310.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
GA-SVMR
image features
flotation
ash content
Opis:
Ash content is one of the most important properties of coal quality and the ash prediction of coal slurry in floatation is urgent and important for automation of the floatation process. The aim of this paper is to propose a method of ash content prediction for flotation tailings by the use of image analysis. The mean gray value, energy, skewness and coal slurry concentration are highly correlated with coal slurry ash content by correlation analysis based on experiments while the particles’ size has little effect on the ash. Single variable linear prediction model between coal ash content and mean gray value was developed by the LS and its prediction errors were below 7%. For improving the prediction results, an ash prediction model based on GA-SVMR was established with additional three input parameters: energy, skewness, coal slurry concentration. This model has a higher accuracy with predictive errors all below 5% and 80% of them less than 3%. Results indicate that GA-SVMR model has a higher precision compared with LS model and PSO-SVMR model and soft-sensing model based on image features of the slurry can be used as a new method for ash detection of floatation tailings in automatic control process of coal flotation.
Źródło:
Physicochemical Problems of Mineral Processing; 2020, 56, 4; 590-598
1643-1049
2084-4735
Pojawia się w:
Physicochemical Problems of Mineral Processing
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Electrical Properties of Phosphorus Doped Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals
Autorzy:
Van Khoi, Le
Jaroszyński, J.
Witkowska, B.
Mycielski, A.
Gałązka, R. R.
Cisowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968127.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
71.55.Jv
72.80.Ga
Opis:
The high pressure Bridgman technique was used to grow Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P crystals. Under the N$\text{}_{2}$ pressure of 30 atm., we obtained the p$\text{}^{+}$-Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10$\text{}^{18}$ cm$\text{}^{-3}$ and the room temperature conductivity σ(RT) ≈ 30 Ω$\text{}^{-1}$cm$\text{}^{-1}$. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10$\text{}^{3}$) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 833-836
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Induced Persistent Photoconductivity in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions
Autorzy:
Van Khoi, Le
Dobrowolski, W.
Zakrzewski, A.
Dobaczewski, L.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952039.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V$\text{}^{m}$. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$ Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions can be caused by the bistable nature of the In dopant in the Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn$\text{}_{x}$Cd$\text{}_{1-x}$Te and Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 883-886
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure and Photoemission States of $Bi_{1.96}Mg_{0.04}Se_3$
Autorzy:
Tokarz, W.
Zalecki, R.
Kowalik, M.
Kołodziejczyk, A.
Kozłowski, A.
Miotkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1374118.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.55.Ak
72.80.Ga
75.47.Lx
79.60.-i
Opis:
We present theoretical band structure calculations and ultraviolet electron photoemission spectroscopy of a topological insulator $Bi_{1.96}Mg_{0.04}Se_3$. Our calculations were based on the first-principles density functional theory with general gradient approximation using Wien2k package with the spin-orbit interaction included by a second-variation method. The R3̅m crystal structure was optimized. In consequence, 4% decrease of volume and 3% decrease of ratio c/a was obtained. This modified structure was multiplied three times in a and b direction in order to place proper amount of Mg. Final crystal structure P3m1 with 135 atoms was used for the calculations. As a result metallic band structure was obtained with conduction band extended from -5.6 eV up to 0.16 eV. It composes mostly from Se p states. Comparison of total DOS with ultraviolet photoemission spectrum shows similar features.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-127-A-129
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure and Photoemission States of $La_{2//3}Pb_{1//3}MnO_3$
Autorzy:
Tokarz, W.
Kowalik, M.
Zalecki, R.
Kołodziejczyk, A.
Powiązania:
https://bibliotekanauki.pl/articles/1427488.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.55.Ak
72.80.Ga
75.47.Lx
79.60.-i
Opis:
We present the theoretical study of electronic and magnetic properties in a manganese perovskite $La_{2//3}Pb_{1//3}MnO_3$. The calculations were carried out in frame of the first-principles density functional theory with the general gradient approximation using the WIEN 2K package. The P3c1 crystal structure was taken from the detailed X-ray diffraction data for the perovskite. The exact exchange energy was utilized for Mn d electrons. Density of states was determined by the modified tetrahedron method. As a result we get a valence band for the spin up and down density of states with the gap for the latter of 1.85 eV. We noticed that conduction band is mainly dominated by d spin up manganese electrons and $Mn (d_{xz}, d_{yz})$ states have twice larger contribution than $(d_{x^2 - y^2}, d_{xy})$. We attribute this to $Mn-O_6$ octahedral tilting. From the same reason $d_{3z^2 - r^2}$ state has no contribution to the density of states at the Fermi energy $(E_{F})$. Comparison of total density of states with the ultraviolet photoemission spectroscopy measurements shows similar features especially as far as the lead spectral intensity from the 6s electrons at about - 10 eV is concerned. The calculated total magnetic moment per formula unit is 3.66 $μ_{B}$, the measured one 3.48 $μ_{B}$/f.u.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1151-1153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 145

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