Growth and Electrical Properties of Phosphorus Doped Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals

The high pressure Bridgman technique was used to grow Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P crystals. Under the N$\text{}_{2}$ pressure of 30 atm., we obtained the p$\text{}^{+}$-Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10$\text{}^{18}$ cm$\text{}^{-3}$ and the room temperature conductivity σ(RT) ≈ 30 Ω$\text{}^{-1}$cm$\text{}^{-1}$. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10$\text{}^{3}$) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.