Electron Transport in Submicron Wires of Semiconductors

We review the methods of fabrication and transport properties of submicron II-VI, IV-VI and III-V semiconductor wires. Devices were prepared by electron-beam lithography and used for detailed magnetotransport studies, carried out at low (down to 30 mK) temperatures. We discuss a number of novel features obtained in ballistic, diffusive and localized transport regimes. In particular, we describe the universal conductance fluctuations for semimagnetic materials (CdMnTe) and discuss the edge channel transport for PbTe, PbSe and GaAs/GaAlAs systems.