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    Wyświetlanie 1-23 z 23
    Tytuł:
    Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
    Autorzy:
    Vasallo, B.
    González, T.
    Pardo, D.
    Mateos, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505612.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.30.Tv
    Opis:
    The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 193-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters
    Autorzy:
    Diabi, A.
    Hocini, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401300.pdf
    Data publikacji:
    2015-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.35.Kt
    85.30.Tv
    Opis:
    In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier ($\Phi_{SB}$) capacity of oxide layer $(C_{INS})$ and geometrical parameter (nanotube diameter $(d_{CNT})$) on the static performance $(I_\text{ON}//I_\text{OFF})$ of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics$ (I_{D}=f(V_{DS})$ for different values of $V_{GS}$, and also the characteristics $(I_{D}=f(V_{GS}))$ for different values of $V_{DS}$. All these circuits are studied for a fixed value of $\Phi_{SB}=0.275 eV$.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 4; 1124-1127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultra-low voltage VDCC design by using DTMOS
    Autorzy:
    Başak, M.
    Kaçar, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1068583.pdf
    Data publikacji:
    2016-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    84.30.Vn
    Opis:
    In this paper, a new ultralow voltage and ultralow power voltage differencing current conveyor based on dynamic threshold voltage MOS transistors was proposed. The simulations were performed by using LTSpice Program with TSMC CMOS 0.18 μ m process parameters. A new notch filter configuration was also presented as an application for the proposed voltage differencing current conveyor. The power consumption of proposed voltage differencing current conveyor was simply 12.42 nW at symmetric ± 0.2 V supply voltage. The simulation results were found in close agreement with the theoretical results.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 1; 223-225
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
    Autorzy:
    Boratyński, B.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tłaczała, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1585274.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Hd
    85.30.De
    85.30.Tv
    Opis:
    AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× $10^{12} cm^{-2}$ and mobility of 1600 $cm^{2}$/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 800-805
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors
    Autorzy:
    Dyakonova, N.
    El Fatimy, A.
    Meziani, Y.
    Coquillat, D.
    Knap, W.
    Teppe, F.
    Buzatu, P.
    Diforte-Poisson, M.
    Dua, C.
    Piotrowicz, S.
    Morvan, E.
    Delage, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492956.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    Opis:
    The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 924-926
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
    Autorzy:
    Videlier, H.
    Dyakonova, N.
    Teppe, F.
    Consejo, C.
    Chenaud, B.
    Knap, W.
    Lusakowski, J.
    Tomaszewski, D.
    Marczewski, J.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492958.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    Opis:
    We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 927-929
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors
    Autorzy:
    Teppe, F.
    Consejo, C.
    Torres, J.
    Chenaud, B.
    Solignac, P.
    Fathololoumi, S.
    Wasilewski, Z.
    Zholudev, M.
    Dyakonova, N.
    Coquillat, D.
    El Fatimy, A.
    Buzatu, P.
    Chaubet, C.
    Knap, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492959.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    07.57.Kp
    52.35.-g
    Opis:
    We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 930-932
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
    Autorzy:
    But, D.
    Dyakonova, N.
    Coquillat, D.
    Teppe, F.
    Knap, W.
    Watanabe, T.
    Tanimoto, Y.
    Boubanga Tombet, S.
    Otsuji, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409591.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    85.30.Tv
    73.43.Qt
    Opis:
    Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1080-1082
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
    Autorzy:
    Vasallo, B.
    Rodilla, H.
    González, T.
    Lefebvre, E.
    Moschetti, G.
    Grahn, J.
    Mateos, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506159.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.De
    85.30.Tv
    Opis:
    We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage $V_{DS}$ is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current $I_{D}$ increases, leading to the kink effect in the I-V characteristics.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 222-224
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transport Phenomena in Two-Dimensional Structures with Quantum Dots
    Autorzy:
    Požela, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041644.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.63.Hs
    73.63.Kv
    85.35.Be
    85.30.Tv
    Opis:
    A model that explains the unusual characteristics of the AlGaAs/GaAs modulation-doped field-effect transistor (MODFET) with InAs quantum dots incorporated in the GaAs channel is presented. It is shown that the negative charge of electrons confined in quantum dots decreases the threshold gate-drain voltage at which the channel is fully depleted. This provides an impact ionization of quantum dots at a low drain voltage. Because of the quantum dot ionization, the quantum dot MODFET transconductance becomes large and negative. The increased transconductance, due to the additional doping of the GaAs and InAs channels by impurities, exceeds 10$\text{}^{3}$ mS/mm. It is shown that the insertion of InAs quantum well with quantum dots into the GaAs quantum well increases the electron maximum drift velocity up to 10$\text{}^{8}$ cm/s, and consequently, quantum dot MODFET current gain cut-off frequency up to few hundred gigahertz.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 118-127
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Detection by the Entire Channel of High Electron Mobility Transistors
    Autorzy:
    Sakowicz, M.
    Łusakowski, J.
    Karpierz, K.
    Knap, W.
    Grynberg, M.
    Köhler, K.
    Valusis, G.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Caban, P.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811985.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.75.+a
    78.20.Ls
    85.30.Tv
    07.57.Kp
    Opis:
    GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1343-1348
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio
    Autorzy:
    Borowicz, L.
    Borowicz, P.
    Rzodkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807595.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Ye
    85.30.Tv
    77.55.-g
    42.60.Mi
    Opis:
    The signal coming from $SiO_{2}$ layer of MOS structure have large noise-to-signal ratio. This has two reasons - first: the dielectric layers have small Raman efficiency, second: the thickness of the dielectric layers are of the order of 10 nm, so the volume of the material irradiated with laser light is small. At the other side spectroscopic and optical data carry the information about important properties of the structure like mechanical stress. Distribution of mechanical stress introduce an important contribution to the electric properties of the electronic systems based on the MOS structures. Therefore, it is important to "distillate" the optical data from the noise. In this contribution the authors discuss some methods of denoising of the Raman signal. The discussed methods compare treatments like wavelet analysis or convolution. The work is illustrated with some examples of the extraction of the data coming from thin layers. The examples of application of the optical data in the description of the properties of the studied structures are presented.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-26-S-29
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
    Autorzy:
    Grigelionis, I.
    Fobelets, K.
    Vincent, B.
    Mitard, J.
    De Jaeger, B.
    Simoen, E.
    Hoffman, T.
    Yavorskiy, D.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492960.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    85.30.Tv
    Opis:
    We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 933-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
    Autorzy:
    Boubanga-Tombet, S.
    Nogajewski, K.
    Teppe, F.
    Knap, W.
    Karpierz, K.
    Łusakowski, J.
    Grynberg, M.
    Dyakonov, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791357.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    84.40.x
    85.30.Tv
    85.35.p
    73.20.Mf
    Opis:
    Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 939-940
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
    Autorzy:
    Kucharski, K.
    Zagrajek, P.
    Tomaszewski, D.
    Panas, A.
    Głuszko, G.
    Marczewski, J.
    Kopyt, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1186027.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    85.60.Gz
    42.79.Pw
    Opis:
    Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1193-1195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Monte Carlo Analysis of the Influence of Different Packaging on MOSFET Energy Response to X-rays and Gamma Radiation
    Autorzy:
    Stanković, S.
    Ilić, R.
    Živanović, M.
    Janković, K.
    Lončar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1418114.pdf
    Data publikacji:
    2012-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.85.Fv
    85.30.Tv
    87.55.kh
    Opis:
    Radiation sensing MOSFETs have found numerous applications as detectors or device components in radiation fields used in nuclear industry, medical applications and space research. Monte Carlo simulations of MOSFET energy response to X-ray and gamma radiation for different packaging were performed. The photon transport Monte Carlo software FOTELP-2K10 has been adapted to obtain the energy deposited in MOSFET structure with microscopic dimensions. In this work the ratio between values of total energy deposited in the sensitive volume (thick $SiO_2$ layer) for cases of MOSFET structure with and without package lid is presented. For this purpose is defined the shielding energy dependence factor (SDEF), and gave its value for kovar and Ti-24Al-11Nb and Ti-13Nb-13Zr alloys as lid materials.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 4; 655-658
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compact Modeling for Submicron Fully Depleted SOI MOSFETs
    Autorzy:
    Remmouche, R.
    Boutaoui, N.
    Bouridah, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491285.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    85.30.Tv
    85.40.Bh
    Opis:
    In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 190-192
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
    Autorzy:
    Kaczmarski, J.
    Taube, A.
    Dynowska, E.
    Dyczewski, J.
    Ekielski, M.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399114.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Gc
    81.15.Cd
    85.30.Tv
    72.80.Ng
    73.61.Jc
    Opis:
    In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 855-857
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theory of Magnetotunnelling through Donors in the Quantum Well of Double-Barrier Resonant-Tunnelling Structures
    Autorzy:
    Fromhold, T. M.
    Sheard, F. W.
    Eaves, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1921661.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Gk
    71.55.Eq
    85.30.Tv
    Opis:
    The tunnel current from a two-dimensional electron gas (2DEG) into donor impurities in the quantum well of a double-barrier heterostructure is studied using the Bardeen Transfer-Hamiltonian formalism. Resonant tunnelling occurs when the donor level lies within the energy range of occupied 2DEG states. It is shown that in the presence of a magnetic field B normal to the current flow, the magnetocurrent J(B) is determined by the Fourier probability density of the donor wave function corresponding to the momentum p0 transferred to the tunnelling electrons by the Lorentz force. Then experimental J(B) curves, in principle, directly measure the donor wave function. The magnetocurrent is quenched when p0 greatly exceeds the width of the distribution of momentum Fourier components of the donor wave function.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 737-740
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
    Autorzy:
    Sakowicz, M.
    Łusakowski, J.
    Karpierz, K.
    Grynberg, M.
    Gwarek, W.
    Knap, W.
    Boubanga, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811983.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.40.Ba
    52.40.Fd
    85.30.Tv
    07.57.Kp
    Opis:
    Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1337-1342
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer
    Autorzy:
    Dasgupta, S.
    Dehm, S.
    Kruk, R.
    Hahn, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808330.pdf
    Data publikacji:
    2009-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Eb
    73.63.Bd
    81.07.Bc
    82.45.Vp
    85.30.Tv
    Opis:
    An electrochemically-gated junction field-effect transistor with metallic conducting indium tin oxide nanoparticle array as active layer is reported. Fabrication of a field-effect device with a degenerative semiconductor like indium tin oxide (carrier concentration $10^{20}-10^{21} cm^{-3}$) is possible by exploiting the high surface-to-volume ratio of nanoparticles and high surface charge density achievable by electrochemical gating. The on/off ratio obtained is 325 although the applied potential was restricted to the capacitive double layer region (to ensure high repeatability) without allowing redox reactions to take place at the interface.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 2; 473-476
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of Semiconductor Nanostructures with nextnano$\text{}^{3}$
    Autorzy:
    Birner, S.
    Hackenbuchner, S.
    Sabathil, M.
    Zandler, G.
    Majewski, J. A.
    Andlauer, T.
    Zibold, T.
    Morschl, R.
    Trellakis, A.
    Vogl, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046896.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.43.Cd
    73.21.Fg
    73.61.Ey
    77.65.Ly
    85.30.Tv
    73.40.Mr
    Opis:
    nextnano$\text{}^{3}$ is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of the carrier dynamics a drift-diffusion model based on a quantum-mechanically calculated density is employed. In this paper we present an overview of the capabilities of nextnano$\text{}^{3}$ and discuss some of the main equations that are implemented into the code. As examples, we first discuss the strain tensor components and the piezoelectric effect associated with a compressively strained InAs layer for different growth directions, secondly, we calculate self-consistently the quantum mechanical electron density of a Double Gate MOSFET, then we compare the intersubband transitions in a multi-quantum well structure that have been obtained with a single-band effective mass approach and with an 8-band k·p model, and finally, we calculate the energy spectrum of a structure in a uniform magnetic field.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 111-124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
    Autorzy:
    Baeumler, M.
    Polyakov, V.
    Gütle, F.
    Dammann, M.
    Benkhelifa, F.
    Waltereit, P.
    Reiner, R.
    Müller, S.
    Wespel, M.
    Quay, R.
    Mikulla, M.
    Wagner, J.
    Ambacher, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1197910.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Fi
    85.30.De
    85.30.Tv
    85.40.Bh
    85.40.Qx
    73.40.-c
    73.90.+f
    73.61.Ey
    73.50.Mx
    Opis:
    The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 982-985
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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