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Wyświetlanie 1-15 z 23
Tytuł:
Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
Autorzy:
Vasallo, B.
González, T.
Pardo, D.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505612.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 193-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters
Autorzy:
Diabi, A.
Hocini, A.
Powiązania:
https://bibliotekanauki.pl/articles/1401300.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.Kt
85.30.Tv
Opis:
In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier ($\Phi_{SB}$) capacity of oxide layer $(C_{INS})$ and geometrical parameter (nanotube diameter $(d_{CNT})$) on the static performance $(I_\text{ON}//I_\text{OFF})$ of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics$ (I_{D}=f(V_{DS})$ for different values of $V_{GS}$, and also the characteristics $(I_{D}=f(V_{GS}))$ for different values of $V_{DS}$. All these circuits are studied for a fixed value of $\Phi_{SB}=0.275 eV$.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1124-1127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultra-low voltage VDCC design by using DTMOS
Autorzy:
Başak, M.
Kaçar, F.
Powiązania:
https://bibliotekanauki.pl/articles/1068583.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
84.30.Vn
Opis:
In this paper, a new ultralow voltage and ultralow power voltage differencing current conveyor based on dynamic threshold voltage MOS transistors was proposed. The simulations were performed by using LTSpice Program with TSMC CMOS 0.18 μ m process parameters. A new notch filter configuration was also presented as an application for the proposed voltage differencing current conveyor. The power consumption of proposed voltage differencing current conveyor was simply 12.42 nW at symmetric ± 0.2 V supply voltage. The simulation results were found in close agreement with the theoretical results.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 223-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation
Autorzy:
Boratyński, B.
Paszkiewicz, B.
Paszkiewicz, R.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/1585274.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Hd
85.30.De
85.30.Tv
Opis:
AlGaN/GaN heterostructure field effect transistors were investigated in terms of microwave and sensor applications. Heterostructure layers grown on sapphire substrates were evaluated using impedance spectroscopy measurements. The 2DEG sheet concentration of 8× $10^{12} cm^{-2}$ and mobility of 1600 $cm^{2}$/(Vs) were obtained. The measured I-V characteristics of the heterostructure field effect transistors devices revealed the saturated drain current 180 mA/mm and the gate pinch-off voltage -2.0 V with the transconductance 200 mS/mm. The structures have been characterized in microwave frequency range with the measured cut-off frequency of 6 GHz for 1 μm gate device. Studies of an AlGaN/GaN heterostructure Schottky diode with a catalytic Pt electrode as a hydrogen gas sensor confirmed high sensitivity of the Schottky barrier on hydrogen adsorption. Differential conductance of the Schottky diode was found to be a convenient parameter to estimate changes of the Schottky barrier height.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 800-805
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors
Autorzy:
Dyakonova, N.
El Fatimy, A.
Meziani, Y.
Coquillat, D.
Knap, W.
Teppe, F.
Buzatu, P.
Diforte-Poisson, M.
Dua, C.
Piotrowicz, S.
Morvan, E.
Delage, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492956.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 924-926
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
Autorzy:
Videlier, H.
Dyakonova, N.
Teppe, F.
Consejo, C.
Chenaud, B.
Knap, W.
Lusakowski, J.
Tomaszewski, D.
Marczewski, J.
Grabiec, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492958.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 927-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors
Autorzy:
Teppe, F.
Consejo, C.
Torres, J.
Chenaud, B.
Solignac, P.
Fathololoumi, S.
Wasilewski, Z.
Zholudev, M.
Dyakonova, N.
Coquillat, D.
El Fatimy, A.
Buzatu, P.
Chaubet, C.
Knap, W.
Powiązania:
https://bibliotekanauki.pl/articles/1492959.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
07.57.Kp
52.35.-g
Opis:
We report on the resonant detection of a 3.1 THz radiation produced by a quantum cascade laser using a 250 nm gate length GaAs/AlGaAs field effect transistor at liquid nitrogen temperature. We show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is enhanced by increasing the drain current and driving the transistor into saturation regime. These results clearly show that plasma wave nanometer-size transistors can be used as detectors in all-solid-state terahertz systems where quantum cascade lasers act as sources.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 930-932
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
Autorzy:
But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T.
Powiązania:
https://bibliotekanauki.pl/articles/1409591.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
85.30.Tv
73.43.Qt
Opis:
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Phenomena in Two-Dimensional Structures with Quantum Dots
Autorzy:
Požela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2041644.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Hs
73.63.Kv
85.35.Be
85.30.Tv
Opis:
A model that explains the unusual characteristics of the AlGaAs/GaAs modulation-doped field-effect transistor (MODFET) with InAs quantum dots incorporated in the GaAs channel is presented. It is shown that the negative charge of electrons confined in quantum dots decreases the threshold gate-drain voltage at which the channel is fully depleted. This provides an impact ionization of quantum dots at a low drain voltage. Because of the quantum dot ionization, the quantum dot MODFET transconductance becomes large and negative. The increased transconductance, due to the additional doping of the GaAs and InAs channels by impurities, exceeds 10$\text{}^{3}$ mS/mm. It is shown that the insertion of InAs quantum well with quantum dots into the GaAs quantum well increases the electron maximum drift velocity up to 10$\text{}^{8}$ cm/s, and consequently, quantum dot MODFET current gain cut-off frequency up to few hundred gigahertz.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 118-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Autorzy:
Vasallo, B.
Rodilla, H.
González, T.
Lefebvre, E.
Moschetti, G.
Grahn, J.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1506159.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage $V_{DS}$ is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current $I_{D}$ increases, leading to the kink effect in the I-V characteristics.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Detection by the Entire Channel of High Electron Mobility Transistors
Autorzy:
Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Knap, W.
Grynberg, M.
Köhler, K.
Valusis, G.
Gołaszewska, K.
Kamińska, E.
Piotrowska, A.
Caban, P.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811985.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.75.+a
78.20.Ls
85.30.Tv
07.57.Kp
Opis:
GaAs/AlGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the Shubnikov-de Haas oscillations of the detection signal. Measurements carried out with a simultaneous modulation of the intensity of the incident THz beam and the transistor gate voltage showed that the detection signal is determined by the electron plasma both in the gated and ungated parts of the transistor channel. This result is of importance for understanding the physical mechanism of the detection in high electron mobility transistors and for development of a proper theoretical description of this process.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1343-1348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of the Experimental Data from MOS Structures in the Case of Large Noise-to-Signal Ratio
Autorzy:
Borowicz, L.
Borowicz, P.
Rzodkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807595.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Ye
85.30.Tv
77.55.-g
42.60.Mi
Opis:
The signal coming from $SiO_{2}$ layer of MOS structure have large noise-to-signal ratio. This has two reasons - first: the dielectric layers have small Raman efficiency, second: the thickness of the dielectric layers are of the order of 10 nm, so the volume of the material irradiated with laser light is small. At the other side spectroscopic and optical data carry the information about important properties of the structure like mechanical stress. Distribution of mechanical stress introduce an important contribution to the electric properties of the electronic systems based on the MOS structures. Therefore, it is important to "distillate" the optical data from the noise. In this contribution the authors discuss some methods of denoising of the Raman signal. The discussed methods compare treatments like wavelet analysis or convolution. The work is illustrated with some examples of the extraction of the data coming from thin layers. The examples of application of the optical data in the description of the properties of the studied structures are presented.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-26-S-29
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:
Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
85.30.Tv
Opis:
We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:
Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:
Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
Autorzy:
Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399114.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc
Opis:
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 23

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