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Wyświetlanie 1-15 z 27
Tytuł:
A Structural Characterization of GaAs MBE Grown on Si Pillars
Autorzy:
Frigeri, C.
Bietti, S.
Scaccabarozzi, A.
Bergamaschini, R.
Falub, C.
Grillo, V.
Bollani, M.
Bonera, E.
Niedermann, P.
von Känel, H.
Sanguinetti, S.
Miglio, L.
Powiązania:
https://bibliotekanauki.pl/articles/1361238.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.16.Rf
61.72.Ff
61.72.Lk
61.72.Nn
68.37.Lp
Opis:
Growth on deeply patterned substrates, i.e. on pillars instead of a continuous substrate, is expected to be very promising to get crack free epilayers on wafers without any bowing. We report here on a structural investigation of GaAs MBE deposited on patterned (001) offcut Si, consisting of pillars 8 μm high and 5 to 9 μm wide, to check mostly the behaviour of the threading dislocations. It is found that only very rarely they propagate up to the GaAs top that will serve as active region in devices. Twins were also detected which sometimes reached the topmost part of GaAs. However, as twins have no associated dangling bonds, they should not be electrically active. Rare antiphase boundaries exist at the interface, hence not harmful for device operation.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 986-990
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge
Autorzy:
Trautman, P.
Pakuła, K.
Witowski, A. M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044548.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.40.Fy
78.30.Fs
78.66.Fd
81.05.Ea
Opis:
Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 903-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calculation Method for the Bandgap of Antimonide Based Multicomponent Alloys
Autorzy:
An, N.
Liu, C.
Fan, C.
Dong, X.
Song, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1030612.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
42.55.Px
81.15.Hi
Opis:
As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the In_xGa_{1-x}As_ySb_{1-y} films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 118-120
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Catalytic compositions based on chlorides of d metals and natural aluminosilicates for the low-temperature sulfur dioxide oxidation with air oxygen
Autorzy:
Rakitskaya, T.
Kiose, T.
Golubchik, K.
Dzhiga, G.
Ennan, A.
Volkova, V.
Powiązania:
https://bibliotekanauki.pl/articles/1052764.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
33.20.Ea
81.05.Ni
Opis:
Samples of natural bentonite and clinoptilolite modified with copper(II), iron(III), and palladium(II) were characterized by both X-ray phase and the Fourier transform infrared spectral methods. The activity of monometallic compositions M_{i}L_{j}/S(M = Co(II), Fe(III), and Pd(II); L = NO₃¯, Cl¯, and SO₄²¯; S = N-CLI or N-Bent) in the reaction with sulfur dioxide was found to depend on the nature of both a metal ion and a support. For bimetallic compositions Cu(II)-Fe(III) and Cu(II)-Pd(II) based on the natural aluminosilicates, a certain synergism in the action of metals forming these pairs towards the reaction of sulfur dioxide oxidation with oxygen was determined.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 1074-1078
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:
Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD
Autorzy:
Kröncke, H.
Figge, S.
Hommel, D.
Epelbaum, B.
Powiązania:
https://bibliotekanauki.pl/articles/1811948.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
01.30.Cc
61.05.cp
81.05.Ea
65.40.De
Opis:
We measured the lattice constants of bulk aluminum nitride crystals at various temperatures by high resolution X-ray diffraction. By the use of a high temperature chamber and a X-ray cryostat a temperature regime from 20 to 1210 K was available. Furthermore, the measured data were fitted by Einstein- and Debye models which yield reliable parameters for the calculation of the thermal expansion coefficients of AlN.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1193-1200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964092.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz
Opis:
The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by nanoindentation
Autorzy:
Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, D.
Borgieł, W.
Räisänen, J.
Nowak, R.
Powiązania:
https://bibliotekanauki.pl/articles/1075863.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Jj
62.20.F-
81.15.Hi
81.05.Ea
Opis:
The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1131-1133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Microscopy of Cracks in $In_{x}Ga_{1-x}As//GaAs(001)$ Multi-Quantum Wells
Autorzy:
Atici, Y.
Yildiz, K.
Akgul, U.
Powiązania:
https://bibliotekanauki.pl/articles/1402651.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.07.St
81.70.-q
61.72.Ff
Opis:
We studied cracks in two different $In_{x}Ga_{1-x}As//GaAs(001)$ multi-quantum-well structures by electron microscopy. Transmission and scanning electron microscopy analyses of the sample-1 revealed that the epilayers associated with cracks. Detailed experimental works on the cracks were carried out by conventional and high-resolution electron microscopy. It was found that the epilayers were very effective on stopping the cracks in sample-1. Many dislocations were observed around the cracks and cracks tips. SEM images showed that the cracks formed an orthogonal set array accompanying with slits and pits. However, there were not observed any cracks in the sample-2.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 859-862
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride
Autorzy:
Azarko, I.
Ignatenko, O.
Karpovich, I.
Odzhaev, V.
Kozlova, E.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400479.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.-v
81.05.Ea
61.72.J-
Opis:
Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 923-925
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of InAs Quantum Dots during Annealing Process
Autorzy:
Guo-zhi, Jia
Jiang-hong, Yao
Yong-chun, Shu
Xiao-dong, Xin
Pi-Biao, -
Powiązania:
https://bibliotekanauki.pl/articles/1812057.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Dn
81.05.Ea
73.21.La
Opis:
InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under $N_2$ atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed by a prompt decrease as annealing temperature increases. It was found that the photoluminescence signal on quantum dots capped with GaAs layer was first slightly red-shifted and then blue-shifted with an increase in annealing temperature. The blue-shift can be attributed to In/Ga interdiffusion in annealing process. Red-shift of optical features indicates the change of the quantum dots compostion, size, and strain from the barrier.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 919-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Investigation of Resistive Sensor for High Power Millimetre Wave Pulse Measurement
Autorzy:
Simniškis, R.
Dagys, M.
Kancleris, Ž.
Tamošiūnas, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813483.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
An experimental investigation of a high power millimetre wave pulse sensor is presented. Two groups of sensors with a flat frequency response were fabricated according to results of the optimisation. The frequency response and voltage standing wave ratio were measured and compared with results of the electrodynamical simulations. The largest measured sensitivity variation of the best sensors within waveguide frequency range was±8%. The reasonable agreement between measured and simulated values of the sensitivity was obtained.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1091-1094
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813498.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
81.05.Ea
81.15.Cd
Opis:
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Porous $n-A_3B_5$ Compounds
Autorzy:
Šimkiene, I.
Kindurys, A.
Treideris, M.
Sabataityte, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813482.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors,
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1085-1090
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method
Autorzy:
Jumidali, M.
Hashim, M.
Abdul Aziz, A.
Abd Rahim, A.
Powiązania:
https://bibliotekanauki.pl/articles/1193093.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.10.Bk
81.15.-z
Opis:
Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000°C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio frequency magnetron sputtering technique. Scanning electron microscopy results showed that the increase in deposition time resulted in a variation in surface morphology. Energy dispersive X-ray spectrometer analysis found that the GI samples composed of Ni element indicating the role of Ni in uniform Ge islands formation. The X-ray diffraction pattern spectra revealed that the GIs exhibited a Ge cubic structure and the intensity of Ge peaks varies with deposition time. In-plane strain indicated that the strain caused by the substrate is tensile and changed to compressive strain at the longer deposition time. The Raman spectra exhibited a red shift in the Ge-Ge peak, compared with the bulk Ge, as a result of compressive strain of the GIs. Fourier transform infrared spectrum analysis also indicated that the optical band gap Eg values of GIs can be varied by deposition time.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1068-1071
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

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