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Tytuł:
Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
Autorzy:
Zhuang, H.
Li, B.
Zhang, S.
Zhang, X.
Xue, Ch.
Wang, D.
Shen, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813498.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.-k
81.05.Ea
81.15.Cd
Opis:
High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 723-730
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An Estimate of the Energy Gap of InN from Measurements of the Fundamental Absorption Edge
Autorzy:
Trautman, P.
Pakuła, K.
Witowski, A. M.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044548.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.40.Fy
78.30.Fs
78.66.Fd
81.05.Ea
Opis:
Optical absorption between 0.4 and 4.5 eV of an InN layer grown by metalorganic vapour phase epitaxy on sapphire was measured at 296 and 12 K. The layer was also characterized by measurements of the Hall effect and of infrared reflectivity in the region of the plasma edge, which determined the concentration, mobility, and effective mass of electrons in the conduction band. The energy gap of InN was estimated to be equal to 0.9±0.2 eV. It was obtained from the spectral position of the fundamental absorption edge. Corrections to the energy gap resulting from the broadening of the fundamental absorption edge, from the Burstein-Moss shift, and from a band-gap shrinkage due to the impurity potential were included.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 903-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental Investigation of Resistive Sensor for High Power Millimetre Wave Pulse Measurement
Autorzy:
Simniškis, R.
Dagys, M.
Kancleris, Ž.
Tamošiūnas, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813483.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
An experimental investigation of a high power millimetre wave pulse sensor is presented. Two groups of sensors with a flat frequency response were fabricated according to results of the optimisation. The frequency response and voltage standing wave ratio were measured and compared with results of the electrodynamical simulations. The largest measured sensitivity variation of the best sensors within waveguide frequency range was±8%. The reasonable agreement between measured and simulated values of the sensitivity was obtained.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1091-1094
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Porous $n-A_3B_5$ Compounds
Autorzy:
Šimkiene, I.
Kindurys, A.
Treideris, M.
Sabataityte, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813482.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.-t
81.05.Rm
81.05.Ea
Opis:
Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors,
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1085-1090
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Catalytic compositions based on chlorides of d metals and natural aluminosilicates for the low-temperature sulfur dioxide oxidation with air oxygen
Autorzy:
Rakitskaya, T.
Kiose, T.
Golubchik, K.
Dzhiga, G.
Ennan, A.
Volkova, V.
Powiązania:
https://bibliotekanauki.pl/articles/1052764.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
33.20.Ea
81.05.Ni
Opis:
Samples of natural bentonite and clinoptilolite modified with copper(II), iron(III), and palladium(II) were characterized by both X-ray phase and the Fourier transform infrared spectral methods. The activity of monometallic compositions M_{i}L_{j}/S(M = Co(II), Fe(III), and Pd(II); L = NO₃¯, Cl¯, and SO₄²¯; S = N-CLI or N-Bent) in the reaction with sulfur dioxide was found to depend on the nature of both a metal ion and a support. For bimetallic compositions Cu(II)-Fe(III) and Cu(II)-Pd(II) based on the natural aluminosilicates, a certain synergism in the action of metals forming these pairs towards the reaction of sulfur dioxide oxidation with oxygen was determined.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 1074-1078
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:
Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:
https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Technology for GaSb-Based optoelectronic Devices
Autorzy:
Piotrowska, A.
Kamińska, E.
Piotrowski, T. T.
Piskorski, M.
Guziewicz, M.
Papis, E.
Gołaszewska-Malec, K.
Kasjuniuk, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952070.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
81.05.Ea
81.40.-z
Opis:
A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 903-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Self-Limiting Growth of GaN at Low Temperatures
Autorzy:
Ozgit, C.
Donmez, I.
Biyikli, N.
Powiązania:
https://bibliotekanauki.pl/articles/1492654.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.15.Gh
82.80.Pv
Opis:
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia $(NH_3)$ as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-055-A-057
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance of Epitaxial InGaAs Quantum Rods
Autorzy:
Nedzinskas, R.
Karpus, V.
Čechavičius, B.
Kavaliauskas, J.
Valušis, G.
Li, L.
Khanna, S.
Linfield, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505523.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
81.05.Ea
Opis:
Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an $As_4$ source is used instead of an $As_2$ source during the molecular beam epitaxial growth.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 164-166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy
Autorzy:
Mizerov, A.
Jmerik, V.
Kaibyshev, V.
Komissarova, T.
Masalov, S.
Sitnikova, A.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811962.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
81.05.Ea
81.15.Hi
Opis:
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature $T_S$ ≈ 760°C and Ga to activated nitrogen flux ratio $F_Ga//F_N^\ast$ ≈ 1.8.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1253-1258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
Autorzy:
Mirowska, A.
Orłowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1409657.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.10.Fq
81.10.-h
81.10.St
72.80.Ey
71.55.Eq
61.72.uj
Opis:
Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1111-1114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Investigation of ZnO Nanowires
Autorzy:
Martínez-Criado, G.
Hernández-Vélez, M.
Letard, I.
Cros, A.
Cantarero, A.
Mínguez-Bacho, I.
Susini, J.
Tucoulou, R.
Sans, J.
Sanz, R.
Vázquez, M.
Powiązania:
https://bibliotekanauki.pl/articles/1539044.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
61.10.Ht
78.70.En
81.05.Ea
Opis:
In this study we report the application of synchrotron X-ray fluorescence, photoluminescence and Raman scattering techniques to the analysis of the incorporation of impurities in unintentionally doped ZnO nanowires. Highly ordered one-dimensional ZnO arrays were fabricated by an oxidation process of Zn metal electrodeposited in nanoporous anodic alumina template. X-ray fluorescence data show the contribution of residual elements into the ZnO nanowires growth. A rough analytical quantification of the main light and heavy chemical contents derives impurity concentrations below 1%. The optical efficiency of ZnO nanowires is strongly affected by non-radiative centers up to temperatures as low as 100 K. The photoluminescence was found to be totally dominated by optical transitions associated with the anodic alumina template. Finally, the Raman scattering provides no evidence of local vibrational modes or secondary phases, but it shows the unambiguous signature of the ZnO hexagonal phase.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 369-373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by nanoindentation
Autorzy:
Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, D.
Borgieł, W.
Räisänen, J.
Nowak, R.
Powiązania:
https://bibliotekanauki.pl/articles/1075863.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Jj
62.20.F-
81.15.Hi
81.05.Ea
Opis:
The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1131-1133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD
Autorzy:
Kröncke, H.
Figge, S.
Hommel, D.
Epelbaum, B.
Powiązania:
https://bibliotekanauki.pl/articles/1811948.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
01.30.Cc
61.05.cp
81.05.Ea
65.40.De
Opis:
We measured the lattice constants of bulk aluminum nitride crystals at various temperatures by high resolution X-ray diffraction. By the use of a high temperature chamber and a X-ray cryostat a temperature regime from 20 to 1210 K was available. Furthermore, the measured data were fitted by Einstein- and Debye models which yield reliable parameters for the calculation of the thermal expansion coefficients of AlN.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1193-1200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

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