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Wyświetlanie 1-15 z 44
Tytuł:
First-Principles Calculations of Structural, Electronic, Optical, and Thermodynamic Properties of CdS, CdTe and Their Ternary Alloys $CdS_{1-x}Te_{x}$ (0.0 ≤ x ≤1.0)
Autorzy:
Ameri, M.
Mesbah, S.
Al-Douri, Y.
Bouhafs, B.
Varshney, D.
Ameri, I.
Powiązania:
https://bibliotekanauki.pl/articles/1364167.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.E-
63.20.dk
04.25.-g
78.66.Hf
73.61.At
Opis:
Using first-principle method, we investigate the structural, electronic, optical, and thermodynamic properties of the $CdS_{1-x}Te_x$ semiconductor alloys using generalized gradient approximation for the exchange-correlation potential calculation. The ground state properties are determined for the bulk materials (CdS and CdTe) in cubic phase. Quantities such as the lattice constants and bulk modulus of interest are calculated. Detailed comparisons are made with published experimental and theoretical data and show generally good agreement. The calculated lattice constants scale linearly with composition (Vegard's law). The microscopic origins of the bowing parameter were explained using the contributions from volume deformation, charge transfer and structural relaxation approach. The refractive index and optical dielectric constant for the alloys of interest were calculated by using different models. In addition, the thermodynamic stability of the alloys was investigated by calculating the critical temperatures of alloys.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1110-1117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dependence of Exciton Linewidth on the Composition of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Layers Grown by MBE
Autorzy:
Bała, W.
Głowacki, G.
Gapiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1933707.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Εt
78.20.Ci
78.66.Hf
Opis:
This work deals with the study of the photoluminescence and reflectivity properties of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers grown on GaAs and ZnTe substrates are dominated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep increase in the linewidth with an increase in Mg concentration are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn$\text{}_{0.78}$Μg$\text{}_{0.22}$Se.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 667-670
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Layers Obtained by Thermal Diffusion of Mg into ZnSe and Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Epilayers Grown by Molecular Beam Epitaxy
Autorzy:
Bała, W.
Firszt, F.
Głowacki, G.
Gapiński, A.
Dzik, J.
Powiązania:
https://bibliotekanauki.pl/articles/1931931.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.20.Ci
78.66.Hf
Opis:
This work deals with the study of photoluminescence properties of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 161-164
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures
Autorzy:
Bertram, F.
Christen, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046894.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
78.66.Hf
81.05.Dz
81.15.Gh
Opis:
The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo- and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 103-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Trions in II-VI Heterostructures
Autorzy:
Cox, R. T.
Huard, V.
Kheng, K.
Lovisa, S.
Miller, R. B.
Saminadayar, K.
Arnoult, A.
Cibert, J.
Tatarenko, S.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968984.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.66.Hf
71.35.Ji
78.20.Ls
Opis:
Optical spectra associated with transitions that create or annihilate charged excitons X$\text{}^{-}$ or X$\text{}^{+}$ can be observed in quantum well heterostructures containing an electron gas or a hole gas, respectively. A review is given of properties of trion states in CdTe quantum wells in zero field and of the magnetic field-dependence of the circular polarization and oscillator strength of the trion optical resonance. The possibility that disorder is needed to stabilise trion states in concentrated 2D electron or hole systems is discussed.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 99-109
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Preparation Technique on the Properties of In:CdS Thin Films
Autorzy:
Dhanam, M.
Kavitha, B.
Maheswari, B.
Jesna, G.
Powiązania:
https://bibliotekanauki.pl/articles/1505169.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
78.66.Hf
61.05.cp
68.37.-d
Opis:
This paper presents the results of the structural, morphological and optical analysis of In:CdS thin films prepared by chemical bath deposition and successive ionic layer adsorption and reaction techniques. X-ray diffraction patterns showed the hexagonal phase of cadmium sulfide and it has been found that the amount of atomic percentage of indium increases the intensity of the preferential orientation (002) plane in chemical bath deposition In:CdS thin films. Compositional analysis confirmed the replacement of Cd ions by In ions and morphological analysis confirmed the lesser grain size and dense morphology in chemical bath deposition In:CdS thin films. Increase in In concentration in successive ionic layer adsorption and reaction In:CdS thin films leads to an increase in the optical transmission up to 80% and the higher band gap and therefore the results of this investigation enabled to understand the significance of preparation technique.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 885-889
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Magnetic Polarons to Ferromagnetism
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/1968985.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
75.70.Cn
78.55.Et
78.66.Hf
Opis:
A brief overview is given on selected effects of the exchange coupling between effective mass electrons and localized spins in II-VI semiconductors containing Mn ions. In the case of a carrier or exciton trapped by an impurity or defect, the exchange interaction leads to zero-field spin-splitting. The current theory of such complexes, known as bound magnetic polarons, describes correctly their spectroscopic and thermodynamic properties as well as their formation dynamics. At the same time, a free magnetic polaron - a delocalized carrier accompanied by a traveling cloud of polarized spins - is not expected to exist for the actual values of the coupling constants. However, hole scattering by thermodynamic and static fluctuations is shown to affect significantly its energy. For a strong coupling, the corresponding renormalization has to be described by a non-perturbative approach. Finally, the influence of the carrier liquid upon the Mn spins is discussed. Here, either optical pumping or p-type doping may lead to a ferromagnetic order, both in bulk and layered structures. Because of a long-range character of the carrier mediated interactions, this ordering is not destroyed by the fluctuations, even in the reduced dimensionality systems.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 111-123
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Thermal Process on Physical Properties of ZnO Films Prepared by Spray Pyrolysis
Autorzy:
Gencyilmaz, O.
Atay, F.
Akyuz, I.
Powiązania:
https://bibliotekanauki.pl/articles/1377852.pdf
Data publikacji:
2014-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
78.66.Hf
73.61.Ga
68.37.Ps
Opis:
ZnO films were deposited on glass substrates by ultrasonic spray pyrolysis technique at a substrate temperature of 300 ± 5°C. All of the films have been annealed at 500°C temperature for different time (1, 2, and 3 h) to improve the optical, electrical and surface properties. The effect of annealing time on the films of physical properties has been investigated. UV-Vis spectrophotometer has been used for transmittance measurements. Also, band gap values of the films have been determined by optical method. Atomic force microscopy has been used to have information the surface morphology and roughness values of the films. Thicknesses, refractive index and extinction coefficient values of the films have been determined by spectroscopic ellipsometry technique. The electrical conduction mechanisms and resistivity of the films were investigated using two probe technique. After all the investigations it was concluded that annealing time has a dramatic effect especially on the surface, optical properties and electrical resistivity values of ZnO films. From the results of these investigations, the application potential of the films for solar cell devices as transparent electrode was searched.
Źródło:
Acta Physica Polonica A; 2014, 126, 6; 1331-1337
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se Epilayers Studied by Spectroscopy Methods
Autorzy:
Głowacki, G.
Gapiński, A.
Derkowska, B.
Bała, W.
Sahraoui, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969076.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
78.20.Jq
78.66.Hf
Opis:
Linear optical properties of the Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se (0 ≤ x ≤ 0.4) alloys have been studied using reflectance, spectroscopic ellipsometry and photoluminescence measurements. The refractive indices of Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se epilayers were investigated as a function of Mg composition (0 ≤ x ≤ 0.4). The energies of band gap E$\text{}_{g}$ and spin-orbit splitting E$\text{}_{g}$+Δ, have been determined. These energies are shifted gradually to higher values with increasing Mg content.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 321-325
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO by ALD - Advantages of the Material Grown at Low Temperature
Autorzy:
Guziewicz, E.
Godlewski, M.
Krajewski, T.
Wachnicki, Ł.
Łuka, G.
Paszkowicz, W.
Domagała, J.
Przeździecka, E.
Łusakowska, E.
Witkowski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791286.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
72.80.Ey
Opis:
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 814-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates
Autorzy:
Kaygorodov, V. A.
Sorokin, V. S.
Sedova, I. V.
Nekrutkina, O. V.
Sorokin, S. V.
Shubina, T. V.
Toropov, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2028799.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
Opis:
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 443-450
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Properties of Bismuth Doped ZnO Thin Films by Sol-Gel Method: Urbach Rule as a Function of Crystal Defects
Autorzy:
Keskenler, E.
Aydın, S.
Turgut, G.
Doğan, S.
Powiązania:
https://bibliotekanauki.pl/articles/1205375.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.66.Hf
78.40.Fy
78.66.Jg
68.37.Yz
68.55.ag
68.60.Bs
Opis:
Bismuth (Bi) doped zinc oxide (ZnO:Bi) thin films were prepared on glass substrates by sol-gel spin coating technique using homogeneous precursor solutions, and effects of Bi doping on the structural and optical properties of ZnO were investigated. The crystalline of ZnO films shifted from polycrystalline nature to amorphous nature with Bi doping. The plane stresses (σ) for hexagonal ZnO and ZnO:Bi crystals were calculated according to the biaxial strain model. The Urbach rule was studied as a function of non-thermal component to the disorder (defects in crystal structures) which is especially observed in the case of non-crystal semiconductors. The calculated Urbach energies and steepness parameters of undoped ZnO and ZnO:Bi films varied between 44.33 meV and 442.67 meV, and 58.3 × $10^{-2}$ and 5.8 × $10^{-2}$, respectively. The Urbach energies of the films increased with an increase in the Bi doping concentration and a great difference was observed for 7.0 mol.% doping. The band gap values of the films exhibited a fluctuated behavior as a result of doping effect.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 782-786
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method
Autorzy:
Kim, M.
Yim, K.
Kim, S.
Nam, G.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1491351.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.20.Fw
78.66.Hf
Opis:
Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy $(E_{U})$ was changed inversely with optical band gap of the indium-doped ZnO thin films.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers
Autorzy:
Koroliov, A.
Arlauskas, A.
Balakauskas, S.
Šoliūnas, M.
Maneikis, A.
Krotkus, A.
Šetkus, A.
Tamošiūnas, V.
Powiązania:
https://bibliotekanauki.pl/articles/1399106.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Li
88.40.jn
77.55.hf
Opis:
In this contribution, we report on investigations of THz emission from $Cu(In,Ga)Se_2$ layers, deposited from a single copper-deficient sputtering target. Emission from $Cu(In,Ga)Se_2$ layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type $Cu(In,Ga)Se_2$ and n-type ZnO layers.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 846-848
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Ions in Studies of Semiconductor Quantum Well Structures
Autorzy:
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/1968988.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.30.Fs
78.66.Hf
71.35.Cc
71.35.Ji
Opis:
A few aspects of a relation between magnetic properties of Mn ion system and electronic states confined in CdTe based quantum wells are discussed. It is shown that the influence of the magnetic fluctuations on the states confined in the quantum well results in the reduction of the relative valence band offset with temperature. Also the decrease in the effective Zeeman splitting is observed by a modulation technique at high temperatures and is explained in terms of the modification of the selection rules for an exciton localised in thermal fluctuations. For the p-doped samples the giant Zeeman splitting is used to tune the polarization of a hole gas by a small magnetic field. The "competition-like" relation between the oscillator strength of exciton (X) and positive trion (X$\text{}^{+}$) is proved experimentally.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 147-154
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 44

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