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Tytuł:
Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates
Autorzy:
Kaygorodov, V. A.
Sorokin, V. S.
Sedova, I. V.
Nekrutkina, O. V.
Sorokin, S. V.
Shubina, T. V.
Toropov, A. A.
Ivanov, S. V.
Powiązania:
https://bibliotekanauki.pl/articles/2028799.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
Opis:
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 443-450
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton States in Type-II ZnSe/BeTe Quantum Wells
Autorzy:
Platonov, A. V.
Yakovlev, D. R.
Zehnder, U.
Kochereshko, V. P.
Ossau, W.
Fischer, F.
Litz, Th.
Waag, A.
Landwehr, G.
Powiązania:
https://bibliotekanauki.pl/articles/1968413.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
78.66.Hf
Opis:
We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 953-957
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Pumped Low Threshold ZnSe Based Lasers with 2.8 ML CdSe Active Region
Autorzy:
Sorokin, S.
Toropov, A.
Shubina, T.
Lebedev, A.
Sedova, I.
Ivanov, S.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1992195.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.45.+h
Opis:
Room-temperature optically pumped (Zn,Mg)(S,Se)/(Zn,Cd)Se laser structures have been grown by molecular beam epitaxy. Using of alternatively-strained short-period superlattice waveguide results in low threshold power density values over the whole blue-green (470-520 nm) wavelength range. Incorporation of CdSe fractional monolayer active region provides more than fourfold further decrease in threshold with respect to quantum well laser structure. Optical and structural properties of laser structure with 2.8 monolayer CdSe are discussed in detail.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 539-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Half-Parabolic Quantum Wells of Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Kutrowski, M.
Wojtowicz, T.
Cywiński, G.
Karczewski, G.
Janik, E.
Dynowska, E.
Kossut, J.
Kossacki, P.
Fiederling, R.
Pfeuffer-Jeschke, A.
Ossau, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968307.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.66.Hf
Opis:
We report on magnetooptical studies of MBE-grown half-parabolic CdTe/Cd$\text{}_{x}$Mn$\text{}_{1-x}$Te quantum well structures. The value of the valence band offset Q$\text{}_{v}$=0.4 ± 0.05 was determined by comparing energies of optical transitions in the absence of a magnetic field with model calculations. This value was verified by fitting the observed spin splitting of the lowest heavy hole (hh) state. We discuss also the temperature dependence of Q$\text{}_{v}$.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 887-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and electrical properties of highly doped ZnO:Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
Autorzy:
Romanyuk, V.
Dmitruk, N.
Karpyna, V.
Lashkarev, G.
Popovych, V.
Dranchuk, M.
Pietruszka, R.
Godlewski, M.
Dovbeshko, G.
Timofeeva, I.
Kondratenko, O.
Taborska,, M.
Ievtushenko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1156366.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.61.Ga
Opis:
Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-36-A-40
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Studies of CdTe/ZnTe Superlattices with Ultrathin ZnTe Layers
Autorzy:
Mariette, H.
Jouneau, P. H
Pelekanos, N. T.
Tardot, A.
Feuilet, G.
Magnea, N.
Powiązania:
https://bibliotekanauki.pl/articles/1929608.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.61.Ga
Opis:
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the study of special superlattice structure, corresponding to a monomolecular plane-host crystal system. Particular attention is given to the strain state control of the inserted ZnTe monolayer. High resolution electron microscopy is used to measure the local lattice distortion: the method yields the location and the total amount of Zn per period, and the results are compared with X-ray diffraction data. Optical properties of these superlattices are also presented. All results show the ability to control ultrathin pseudomorphic layers of ZnTc within CdTe, with limited Zn segregation, and of high crystalline and optical quality. In addition, they can be fitted within the framework of elasticity theory for the structural data, and of a finite quantum well model for the optical ones, even in the ultimate limit of only one nominal ZnTe monolayer.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 423-433
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
δ-Doped CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Multiple Quantum Wells Investigated by Photoreflectance Spectroscopy
Autorzy:
Sitarek, P.
Misiewicz, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933972.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
78.66.Hf
Opis:
Room temperature photoreflectance spectroscopy was used to investigate CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te multiple quantum wells grown by MBE. Structures were indium δ-doped into the well or into the barrier. The value of heavy and light hole subbands splitting was measured and compared to the calculated ones. The influence of the position of δ-doping on the measured spectra was shown.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 901-904
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Related Electronic States on CdTe(110) Observed by Means of Optical Spectroscopy
Autorzy:
Kowalski, B. J.
Orłowski, B. A.
Cricenti, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934063.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
78.66.Hf
Opis:
Surface differential reflectivity together with photoemission and Auger electron spectroscopies have been applied to observe and identify optical transitions among surface related states on CdTe(110) surfaces. The strongest contributions to the band of optical transitions have been revealed at the photon energies of 2.8, 3.4, and 3.9 eV. Their correspondence to excitations from the occupied S1 band to the unoccupied U1 one at the Γ, Χ and Χ' points of the surface Brillouin zone is discussed.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1005-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Zn:Se Ratio on the Properties of Sprayed ZnSe Thin Films
Autorzy:
Öztaş, M.
Bedir, M.
Bakkaloğlu, Ö.
Ormancı, R.
Powiązania:
https://bibliotekanauki.pl/articles/2042122.pdf
Data publikacji:
2005-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.50.Pz
Opis:
The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The ZnSe thin films have been deposited onto glass substrates by the spray pyrolysis method, the substrate temperature kept at 430ºC using mixed aqueous solutions of ZnCl$\text{}_{2}$ and SeO$\text{}_{2}$ with different Zn:Se ratios. Their electrical, structural, and photoconductivity properties have been studied. The values of optical bandgap have been determined from the absorption spectra.
Źródło:
Acta Physica Polonica A; 2005, 107, 3; 525-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se Epilayers Studied by Spectroscopy Methods
Autorzy:
Głowacki, G.
Gapiński, A.
Derkowska, B.
Bała, W.
Sahraoui, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969076.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
78.20.Jq
78.66.Hf
Opis:
Linear optical properties of the Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se (0 ≤ x ≤ 0.4) alloys have been studied using reflectance, spectroscopic ellipsometry and photoluminescence measurements. The refractive indices of Zn$\text{}_{1-x}$Mg$\text{}_{x}$Se epilayers were investigated as a function of Mg composition (0 ≤ x ≤ 0.4). The energies of band gap E$\text{}_{g}$ and spin-orbit splitting E$\text{}_{g}$+Δ, have been determined. These energies are shifted gradually to higher values with increasing Mg content.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 321-325
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy
Autorzy:
Platonov, A. V.
Kochereshko, V. P.
Ivchenko, E. L.
Yakovlev, D.
Ossau, W.
Fischer, F.
Waag, A.
Landwehr, G.
Powiązania:
https://bibliotekanauki.pl/articles/1992063.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.66.-w
78.66.Hf
Opis:
Photoluminescence spectra of type-II ZnSe/BeTe superlattices were studied. A linear polarised photoluminescence has been found in the spectral range of spatially indirect exciton transitions. This observation is interpreted in a model of optical anisotropy of heterostructures with no-common atom at interfaces.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 479-482
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Magneto-Optical Study on Single Quantum Wells, Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te/Cd$\text{}_{1-x'-y}$Zn$\text{}_{x}$'Mn$\text{}_{y}$Te
Autorzy:
Takeyama, S.
Grabecki, G.
Adachi, S.
Takagi, Y.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934045.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.Ls
78.66.Hf
Opis:
Four-single quantum wells composed of the ternary non-magnetic compounds Cd$\text{}_{0.93}$Zn$\text{}_{0.07}$Te (well width = 13, 19, 40, 90 Å), separated by the quaternary magnetic-compound Cd$\text{}_{0.48}$Zn$\text{}_{0.04}$Mn$\text{}_{0.48}$Te on (100)GaAs substrate were grown by MBE, and exhibited clear and distinctive photoluminescence lines corresponding to each quantum well. Double luminescence peaks with closely spaced within one well were observed from 90 Å and 40 Å quantum wells. Temperature and magnetic-field study revealed characteristic luminescence features associated with a bound exciton near the interface rather than with one monolayer fluctuation.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 945-948
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Layers Obtained by Thermal Diffusion of Mg into ZnSe and Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Epilayers Grown by Molecular Beam Epitaxy
Autorzy:
Bała, W.
Firszt, F.
Głowacki, G.
Gapiński, A.
Dzik, J.
Powiązania:
https://bibliotekanauki.pl/articles/1931931.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.20.Ci
78.66.Hf
Opis:
This work deals with the study of photoluminescence properties of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 161-164
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Study of an Asymmetric Double Quantum Well System: CdTe/CdMnTe
Autorzy:
Lawrence, I.
Feuilet, G.
Tuffigo, H.
Bodin, C.
Cibert, J.
Rühle, W. W.
Powiązania:
https://bibliotekanauki.pl/articles/1861487.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.20.Ls
78.47.+p
Opis:
Carrier tunneling through CdMnTe barriers of different thicknesses is investigated in CdTe/CdMnTe asymmetric double quantum wells. Steady-state photoluminescence at 1.8 K and time-resolved photoluminescence experiments between 10 K and 50 K were performed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 637-640
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence Decay in Deep Quantum Wells CdTe/Cd_{0.5}Mn_{0.5}Te at Room Temperature
Autorzy:
Kowalczyk, L.
Fancey, S.
Buller, G.
Massa, J.
Kutrowski, M.
Janik, E.
Karczewski, G.
Wojtowicz, T.
Zakrzewski, A.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876908.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.47.+p
78.55.Et
Opis:
Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd_{0.5}Mn_{0.5}Te single quantum well. The width of the investigated well was 100 A. The study was performed at room temperature. The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd_{0.85}Mn_{0.15}Te quantum wells. A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 508-513
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Scanning Tunneling Spectroscopy and Luminescent Properties of ZnS:Mn,Cu,Cl Thin Films
Autorzy:
Neunert, G.
Kamiński, M.
Susła, B.
Dunaj, T.
Chimczak, E.
Bertrandt-Żytkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/2036945.pdf
Data publikacji:
2003
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Fi
78.66.Hf
68.37.Ef
Opis:
Electrical and luminescent properties of ZnS:Mn,Cu,Cl thin films were investigated. Combined both studies: scanning tunneling microscopy and scanning tunneling spectroscopy were made. The current and differential conductance versus applied voltage were measured for the ZnS:Mn,Cu,Cl thin films. Additionally, the spectral and kinetic properties of the electroluminescent cells based on the ZnS:Mn,Cu,Cl thin films were measured. The maximum of the electroluminescence lies at 586 nm. The electroluminescence was excited by rectangular wave voltage pulses with pulse length from 1μs to 1 ms. It was shown that time dependence of the electroluminescence is well explained assuming energy transfer between monomolecular centres.
Źródło:
Acta Physica Polonica A; 2003, 104, 3-4; 357-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
Autorzy:
Kowalik, I. A.
Guziewicz, E.
Kopalko, K.
Yatsunenko, S.
Godlewski, M.
Wójcik, A.
Osinniy, V.
Krajewski, T.
Story, T.
Łusakowska, E.
Paszkowicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047710.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.66.Hf
81.15.Kk
Opis:
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 401-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dependence of Exciton Linewidth on the Composition of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se Layers Grown by MBE
Autorzy:
Bała, W.
Głowacki, G.
Gapiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1933707.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Εt
78.20.Ci
78.66.Hf
Opis:
This work deals with the study of the photoluminescence and reflectivity properties of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn$\text{}_{x}$Mg$\text{}_{1-x}$Se layers grown on GaAs and ZnTe substrates are dominated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep increase in the linewidth with an increase in Mg concentration are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn$\text{}_{0.78}$Μg$\text{}_{0.22}$Se.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 667-670
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method
Autorzy:
Kim, M.
Yim, K.
Kim, S.
Nam, G.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1491351.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.20.Fw
78.66.Hf
Opis:
Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy $(E_{U})$ was changed inversely with optical band gap of the indium-doped ZnO thin films.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Dependent Conductivity of Ultrathin ZnO Films
Autorzy:
Snigurenko, D.
Kopalko, K.
Krajewski, T.
Łuka, G.
Gierałtowska, S.
Witkowski, B.
Godlewski, M.
Dybko, K.
Paszkowicz, W.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1403646.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
81.15.Gh
Opis:
Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1042-1044
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO by ALD - Advantages of the Material Grown at Low Temperature
Autorzy:
Guziewicz, E.
Godlewski, M.
Krajewski, T.
Wachnicki, Ł.
Łuka, G.
Paszkowicz, W.
Domagała, J.
Przeździecka, E.
Łusakowska, E.
Witkowski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791286.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
72.80.Ey
Opis:
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 814-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Binding of Biexcitons in GaAs/AlGaAs Superlattices
Autorzy:
Mizeikis, V.
Birkedal, D.
Langbein, W.
Lyssenko, V. G.
Hvam, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968406.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.50.Md
71.35.Cc
78.66.Hf
Opis:
Binding of the heavy-hole excitons and biexcitons in GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As superlattices is studied using linear and nonlinear optical techniques. High biexciton binding energies characteristic of quasi two-dimensional biexcitons are observed in superlattices with considerable miniband dispersion.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 923-928
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Dynamics in ZnTe Based Semimagnetic Semiconductors and CdMnTe Quantum Wells
Autorzy:
The Khoi, Nguyen
Gaj, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Demianiuk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952068.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
78.66.Hf
73.20.Dx
Opis:
Inelastic scattering of excitons on LO phonons in ZnTe based bulk semimagnetic semiconductors with low concentration of paramagnetic ions (Mn$\text{}^{2+}$, Fe$\text{}^{2+}$ and Cr$\text{}^{2+}$) was studied. A polarization degree of the LO phonon Raman lines was measured as a function of the exciton splitting in a magnetic field, and allowed us to determine the polarization lifetime (polariton flight time). A similar method was used to investigate multiple Mn$\text{}^{2+}$ spin-flip scattering in CdMnTe quantum well. The cascade model seems to be not adequate to interpret the dependence of the polarization degree on the order of scattering.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 899-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Magnetic Polarons to Ferromagnetism
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/1968985.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
75.70.Cn
78.55.Et
78.66.Hf
Opis:
A brief overview is given on selected effects of the exchange coupling between effective mass electrons and localized spins in II-VI semiconductors containing Mn ions. In the case of a carrier or exciton trapped by an impurity or defect, the exchange interaction leads to zero-field spin-splitting. The current theory of such complexes, known as bound magnetic polarons, describes correctly their spectroscopic and thermodynamic properties as well as their formation dynamics. At the same time, a free magnetic polaron - a delocalized carrier accompanied by a traveling cloud of polarized spins - is not expected to exist for the actual values of the coupling constants. However, hole scattering by thermodynamic and static fluctuations is shown to affect significantly its energy. For a strong coupling, the corresponding renormalization has to be described by a non-perturbative approach. Finally, the influence of the carrier liquid upon the Mn spins is discussed. Here, either optical pumping or p-type doping may lead to a ferromagnetic order, both in bulk and layered structures. Because of a long-range character of the carrier mediated interactions, this ordering is not destroyed by the fluctuations, even in the reduced dimensionality systems.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 111-123
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Prosperities of Ag-ZnO Composition Nanofilm Synthesized by Chemical Bath Deposition
Autorzy:
Wang, Y.
Yao, J.
Jia, G.
Lei, H.
Powiązania:
https://bibliotekanauki.pl/articles/1505423.pdf
Data publikacji:
2011-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Lm
78.66.Hf
78.55.Et
68.37.Hk
Opis:
Ag-ZnO composite thin films were prepared on glass substrates by chemical bath deposition at lower temperature. The samples were characterized by X-ray diffraction, scanning electron microscopy, photoluminescence and the optical transmission spectra. The morphology analysis showed that Ag nanoparticles were not deposited on the ZnO nanorods surface but on the glass substrate. The influence of the reaction time on the size and density of Ag nanoparticles was studied, the results showed that the reaction time played an important role in determining of the optical characteristics. There were two obvious photoluminescence peaks located at about 395 nm and 471 nm, respectively. The blue emission centered at 471 nm can be ascribed to the electron transition from $Zn_{i}$ to $V_{Zn}$.
Źródło:
Acta Physica Polonica A; 2011, 119, 3; 451-454
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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