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Wyświetlanie 1-15 z 21
Tytuł:
Interplay between Correlated Electrons and Quantum Phonons in Charge-Ordered and Mott-Insulating Organic Compounds
Autorzy:
Yonemitsu, K.
Maeshima, N.
Tanaka, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1490009.pdf
Data publikacji:
2012-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Bh
71.30.+h
71.45.Lr
71.10.Fd
Opis:
At an early stage of the photoinduced transition from an insulator to a metal in quasi-two-dimensional organic conductors, a coherent motion of electrons is observed in a charge-ordered insulator, but not so far in a Mott insulator. The mechanisms of these different photoinduced charge dynamics are theoretically studied by numerical solutions to the time-dependent Schrödinger equation for exact many-electron-phonon wave functions on small clusters of model systems. We use two-dimensional three-quarter-filled extended Holstein-Hubbard models on anisotropic triangular lattices. For a charge-ordered insulator on a lattice simplified from the structure of $α-\text{(BEDT-TTF)}_2I_3$, we indeed find a low-energy collective electronic motion coupled with quantum phonons even if the energy of photoexcitation is away from this energy. For a Mott insulator on a lattice simplified from the structure of $κ-\text{(BEDT-TTF)}_2X$, however, such a collective motion does not appear, and quantum phonons are hardly excited.
Źródło:
Acta Physica Polonica A; 2012, 121, 2; 372-374
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Time Dynamics Research of Coherent State in Semiconductors by Excitation of Femtoseconds Pulses
Autorzy:
Trukhin, V.
Buyskikh, A.
Powiązania:
https://bibliotekanauki.pl/articles/1506278.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Jn
78.47.jh
82.53.Kp
78.45.+h
Opis:
In this article we present results of research of coherent processes of the ultrashort pulse light reemission in semiconductors. The time dynamics of the amplitude and the phase of the probe light wave reflected from the surface of low temperature GaAs was researched by the pump-probe method. The photodetector sensed the interference figure which shows interaction between probe pulse and pump pulse and also between probe pulse and excited by the pump coherent states in the semiconductor. The pulses wavelength is 800 nm and the pulses width is 15 fs. Thus the energy of excited photoelectrons was higher than conduction-band bottom by 60 to 140 meV. Due to the short duration of the pulse we could observe the coherent scattering of ultrashort light pulses at the room temperature. The impulse relaxation time for photoelectrons was determined by the experiments and it was 40 fs.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 265-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction
Autorzy:
Teisseyre, H.
Szymański, M.
Khachapuridze, A.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Łucznik, B.
Kamler, G.
Kryśko, M.
Suski, T.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047728.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
78.45.+h
78.66.Fd
Opis:
The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm$\text{}^{2}$ for a 700μm long cavity (at room temperature).
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 467-472
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Pumped Low Threshold ZnSe Based Lasers with 2.8 ML CdSe Active Region
Autorzy:
Sorokin, S.
Toropov, A.
Shubina, T.
Lebedev, A.
Sedova, I.
Ivanov, S.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1992195.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.45.+h
Opis:
Room-temperature optically pumped (Zn,Mg)(S,Se)/(Zn,Cd)Se laser structures have been grown by molecular beam epitaxy. Using of alternatively-strained short-period superlattice waveguide results in low threshold power density values over the whole blue-green (470-520 nm) wavelength range. Incorporation of CdSe fractional monolayer active region provides more than fourfold further decrease in threshold with respect to quantum well laser structure. Optical and structural properties of laser structure with 2.8 monolayer CdSe are discussed in detail.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 539-544
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation
Autorzy:
Sedova, I.
Shubina, T.
Sorokin, S.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Willander, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992185.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
Opis:
Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w>0.7 monolayer with the density increasing up to 2.5×10$\text{}^{10}$ cm$\text{}^{-2}$ at w=2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 519-525
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Disordered Nd-Doped Crystals for Diode Pumping
Autorzy:
Ryba-Romanowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1929796.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.55.Hx
Opis:
Some interest has been directed recently to neodymium doped crystals with strong inhomogeneous broadening of absorption bands which are believed to be better suited for diode pumping than the crystals with ordered lattice. The disordered Nd-doped crystals may be obtained in two ways. The first one is to introduce a structural disorder in ordered lattice by substituting partially one or more cations by cations with different charges. Alternatively, the compounds with inherently disordered structure are synthesized and doped with Nd. We consider two wide families of compounds of general formulae ABC$\text{}_{3}$O$\text{}_{7}$ and ABCO$\text{}_{4}$ where A stands for Ca, Sr, Ba, B is Y or rare earth and C stands for Ga or Al. Both the families form the crystals with inherently disordered structure and can accept an appreciable amount of Nd. Results of structural and spectroscopic investigations are used to determine material's parameters relevant to laser performance. Comparison of several disordered crystals is made and their suitability for diode pumping is discussed.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 945-952
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields
Autorzy:
Raguotis, R.
Brazis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1506223.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.30.-j
42.55.-f
72.10.-d
72.20.Ht
Opis:
Electron and phonon distribution in momentum space is modeled using Monte Carlo method. Calculated LO phonon distribution in zinc-blende GaN deviates dramatically from the thermal equilibrium (Planck) function, and well coincides with the phonon number elucidated from the existing anti-Stokes Raman scattering experiments.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 247-249
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Active Ions Distribution in Laser Crystals Using High Resolution Spectroscopy
Autorzy:
Pelletier-Allard, N.
Pelletier, R.
Powiązania:
https://bibliotekanauki.pl/articles/1945492.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.50.Ec
78.55.Hx
Opis:
High resolution spectroscopy techniques are used to investigate the distribution of rare-earth ions inside crystal hosts and their transfer properties. Examples concerning two typical laser materials are treated.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 143-150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
Autorzy:
Onufrijevs, P.
Serevičius, T.
Scajev, P.
Manolis, G.
Medvids, A.
Chernyak, L.
Kuokstis, E.
Yang, C.
Jarasiunas, K.
Powiązania:
https://bibliotekanauki.pl/articles/1506285.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.15.+e
78.45.+h
78.30.Fs
Opis:
We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 274-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality ZnSe and Zn(Se,S) Produced by Low Temperature Physical Vapour Transport
Autorzy:
Mycielski, A.
Szadkowski, A.
Kowalczyk, L.
Zaręba, A.
Powiązania:
https://bibliotekanauki.pl/articles/1952680.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
78.55.Et
78.45.+h
Opis:
High quality, large (25 mm in diameter) crystals of ZnSe and Zn(Se,S) were grown by low-temperature physical vapour transport method and characterized by various techniques, i.e. energy dispersive X-ray fluorescence spectrometry, double-crystal X-ray diffraction rocking curve FWHM, reflectivity measurements in the region of free exciton, electrical measurements and photoluminescence measurements for both low and high excitation densities. The measurement of the photoluminescence related to the neutral-donor-bound exciton revealed superlinear log(photoluminescence intensity) versus log(excitation intensity) dependence, which indicates stimulated emission phenomena.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1050-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
Autorzy:
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/2038288.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.47.+p
78.67.De
Opis:
We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content
Autorzy:
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Springis, M.
Tale, I.
Yang, C. C.
Powiązania:
https://bibliotekanauki.pl/articles/2041743.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.47.+p
78.67.De
Opis:
We report on high-excitation luminescence spectroscopy of In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 256-260
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Studies of Thermally Activated Vertical Hole Transport in ZnCdSe/ZnSSe Superlattice
Autorzy:
Lebedev, A.
Sorokin, S.
Toropov, A.
Shubina, T.
Il'inskaya, N.
Nekrutkina, O.
Ivanov, S.
Pozina, G.
Bergman, P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1991641.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
78.45.+h
71.35.-y
78.47.+p
72.80.Ey
Opis:
Miniband transport in alternatively-strained ZnCdSe/ZnSSe short period superlattices is investigated using a structure with an enlarged quantum well. Temperature dependences of time-resolved and continuous wave photoluminescence have been measured, demonstrating an efficient temperature-induced vertical hole transport. A quantitative description is given for the carrier kinetics in these structures.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 421-426
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated and Laser Emission in CdZnTe/CdMnTe Double Quantum Well Heterostructures
Autorzy:
Kowalczyk, L.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933829.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
71.55.Gs
Opis:
Stimulated emission by optical excitation has been investigated in CdZnTe/CdMnTe quantum well heterostructures. Laser action has been achieved at 4.2 K and at 77 K with relatively low threshold values of the excitation intensity. Photοluminescence excitation spectra of the stimulated emission were obtained indicating that the optical gain involves exciton-exciton inelastic scattering.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 787-790
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission in Zn(Se,S) Single Crystals
Autorzy:
Kowalczyk, L.
Mycielski, A.
Szadkowski, A.
Testelin, C.
Rigaux, C.
Menant, M.
Powiązania:
https://bibliotekanauki.pl/articles/1968254.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
81.10.Bk
78.55.Et
Opis:
Two different types of optically pumped stimulated emission were observed at 1.8 K in the high quality Zn(Se,S) crystals grown by low temperature physical vapour transport. One type, occurring at moderate excitation levels, is ascribed to the recombination of excitons localized because of chemical disorder in the two-anion mixed crystal. The other type, occurring at high excitation levels, is related to the inelastic exciton-exciton scattering.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 871-874
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

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