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Wyświetlanie 1-15 z 123
Tytuł:
Room and Liquid Nitrogen Temperature Reflectivity Spectra of Ζn$\text{}_{1- x}$ Cο$\text{}_{x}$ Se Mixed Crystals
Autorzy:
Dębowska, D.
Zimnal-Starnawska, M.
Kisiel, A.
Piacentini, M.
Zema, N.
Lama, F.
Giriat, W.
Powiązania:
https://bibliotekanauki.pl/articles/1932097.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
Opis:
The optical properties of the semiconducting compounds Zn$\text{}_{1-x}$Co$\text{}_{x}$Se crystallizing in the zinc-blende structure have been investigated. The reflectivity spectra of these materials for different concentration of Co ions, have been taken out in a wide energy range between 4 and 25 eV at room (RT) and liquid nitrogen temperature (LNT) using synchrotron radiation from ADONE Storage Ring in Frascati. The comparisons between the reflectivity spectra of ternary systems and host crystal ZnSe are made. On the basis of the experimental and theoretical results, the changes of the structures of the reflectivity spectra of host crystal ZnSe caused by the influence of transition metal ions are discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 275-278
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Optical Response of Gasochromic Thin Film Structures through Modelling of Their Transmission Spectra under Presence of Organic Vapor
Autorzy:
Domaradzki, J.
Mazur, M.
Wojcieszak, D.
Kaczmarek, D.
Jedrzejak, T.
Powiązania:
https://bibliotekanauki.pl/articles/1189782.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
Opis:
Properties of chromogenics materials have been of great interest for more than 50 years till now. Some examples of their practical application are photochromic lenses, electrochromic smart windows or even some examples of sensors devices based on gasochromic thin films have already been commercially available on the market. However, recognition of different physical and chemical processes that influence the optical response of such materials under changes in surrounding atmosphere is still an open subject for discussion. This work presents results of experimental and theoretical investigations of optical response of the two selected gasochromic (Ti-V-Ta-W)Ox and (Ti-V-Ta-Nb)Ox oxide thin films under ethanol vapor stimulations. Based on the measured experimental transmission spectra, the complex refraction index characteristics were plotted using optical models elaborated for the VIS-NIR spectral range. The models were further used for the prediction of optical responses of optical gas sensing structures with observed gasochromic behavior.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1702-1705
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design and Characterization of Resonator Mirrors for Microlasers on the Base of $YAlO_3$ Single Crystals Activated with $Nd^{3+}$ and $Tm^{3+}$ Ions
Autorzy:
Ilyina, O.
Hajduchok, V.
Izhnin, O.
Sugak, D.
Kuzmak, R.
Syvorotka, I.
Dyachok, Ya.
Groshovyy, I.
Vakiv, M.
Powiązania:
https://bibliotekanauki.pl/articles/1550635.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
Opis:
Most of the challenges in laser technology can be overcome by using yttrium-aluminum perovskite ($YAlO_3$, YAP). These crystals are characterized by more advantages than typical $Y_3Al_{5}O_{12}$ (YAG) crystals. However, the creation of microlasers with these materials is just under development. The aim of the work was to theoretically design the input and output cavity mirrors for microlasers on the base of $YAlO_3:Nd$ or $YAlO_3:Tm$ single crystals, and to investigate those resonators obtained according to the theoretical design using electron beam evaporation method.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 244-247
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunneling Control of Optical Properties of a Quantum Well from Adjacent Quantum Well by Coherent Population Trapping Effect
Autorzy:
Barantsev, K.
Litvinov, A.
Velichko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1195367.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.40.Fy
Opis:
The coherent population trapping effect in double tunnel-coupled quantum wells is analyzed. One of two quantum wells interacts with the two-frequency laser radiation and low-frequency field, thus forming a closed contour of excitation. It is possible to control the excited level population in such a scheme of excitation by changing relative phases of the fields in the coherent population trapping state. The quantum well is bound to the other quantum well by tunnel coupling of the excited levels, therefore the population and optical properties of the other quantum well depend on the coherent population trapping state in the first quantum well and can be controlled.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1069-1071
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study
Autorzy:
Ochalski, T. J.
Żuk, J.
Vlasukova, L. A.
Powiązania:
https://bibliotekanauki.pl/articles/1968408.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We present a study of detailed line shapes of photoreflectance spectra for Al$\text{}_{0.3}$Ga$\text{}_{0.7}$ As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As band gaps (E$\text{}_{0}$). The photoreflectance spectra originated in the vicinity of the Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 935-939
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of a Monoclinic Insulator Cu(H₂O)₂(en)SO₄
Autorzy:
Sýkora, R.
Postava, K.
Legut, D.
Tarasenko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1386676.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.40.-q
Opis:
We compare theoretically predicted, by means of ab-initio calculations, dielectric tensor and related experimental values obtained from Mueller-ellipsometry measurements of an insulating monoclinic (optically biaxial) crystal of Cu(H₂O)₂(en)SO₄, en=C₂H₈N₂. We concentrate on the static limit, ω→ 0.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 469-471
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption Edge and Optical Band Gap of $Ag-As_{40}S_{30}Se_{30}$ Amorphous Samples
Autorzy:
Čajko, K.
Lukić-Petrović, S.
Štrbac, D.
Powiązania:
https://bibliotekanauki.pl/articles/1401361.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.66.Jg
Opis:
The paper describes the results of a study of the influence of silver content on the absorption edge and optical band gap of the newly synthesized glasses of the $Ag_{x}(As_{40}S_{30}Se_{30})_{100-x}$ type for x=0, 0.5, 1, 2, 3, 5 at.% and of the corresponding films. The synthesis of bulk samples was performed in a rocking furnace from high-purity elemental components by a melt quenching method. Films were prepared from the synthesized bulk samples by pulsed laser deposition. Transmission spectra of the investigated samples were recorded at room temperature. The absorption edge and the optical band gap were determined by extrapolating the linear parts of the absorption spectra. It was found that the investigated range of Ag doping concentrations has a great influence on the absorption edge and optical band gap. Namely, with the increase of the silver content in the material the optical band gap showed a decrease. For films, it decreased from 2.02 eV, for the glass without silver, to 1.805 eV for the composition with 5 at.% Ag, whereas for the analogous bulk samples this decrease was from 1.84 eV to 1.609 eV.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1286-1288
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Absorption of Some Glycine Crystals and their Aqueous Solutions
Autorzy:
Koralewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2035746.pdf
Data publikacji:
2003-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.40.-q
Opis:
UV absorption spectra of glycine crystals, i.e. triglycine sulphate, selenate, diglycine sulphate as well as their deuterated analogues in solid state and aqueous solutions are given. Results are compared with the electronic transition energies calculated by LCAO INDO method for glycine molecule and ion, assuming their crystal geometry.
Źródło:
Acta Physica Polonica A; 2003, 103, 5; 459-470
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
Autorzy:
Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1992051.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.20.-e
Opis:
We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of 5f$\text{}^{3}$ → 5f$\text{}^{2}$6d$\text{}^{1}$ Transitions in the Absorption Spectrum of U$\text{}^{3+}$ in Cs$\text{}_{2}$NaYCl$\text{}_{6}$
Autorzy:
Drożdżyński, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929803.pdf
Data publikacji:
1993-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.20.Bh
78.20.We
Opis:
The electronic absorption spectrum of a Cs$\text{}_{2}$NaYCl$\text{}_{6}$ :U$\text{}^{3+}$ single crystal was investigated in the 13000-45000 cm$\text{}^{-1}$ spectral range at 300 K. An interpretation of the 5f$\text{}^{3}$ → 5f$\text{}^{2}$6d$\text{}^{1}$ transitions on the basis of the J$\text{}_{iγ}$ interaction enabled the determination of the energy of the first unresolved level of the 5f$\text{}^{2}$6d$\text{}^{1}$ electronic configuration, the distance between the first two levels of the configuration as well as the splitting parameter of the d-electron in the crystal field.
Źródło:
Acta Physica Polonica A; 1993, 84, 5; 975-977
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Characteristics of the Boron Doped MnO Films Deposited by Spray Pyrolysis Method
Autorzy:
Bedir, M.
Tunç, A.
Öztas, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398927.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
78.20.-e
Opis:
Boron doped MnO films were prepared by spray pyrolysis technique at 375°C substrate temperature, which is a low cost and large area technique to be well-suited for the manufacture of solar cells, using boric acid (H₃BO₃) as dopant source, and their properties were investigated as a function of doping concentration. Boron doping was achieved by adding 0.1 M, 0.2 M, 0.3 M, and 0.4 M H₃BO₃ to the starting solution. X-ray analysis showed that the films were polycrystalline fitting well with a cubic structure and have preferred orientation in (111), (220) and (311) directions. Optical band gap of the undoped and B-doped MnO films were found to vary from 2.25 to 2.54 eV. The changes observed in the energy band gap and structural properties of the films related to the boric acid concentration are discussed in detail.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1159-1164
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Ellipsometry Problem for the Substrate-Based Uniaxial Non-Homogeneous Film
Autorzy:
Karpuk, M. M.
Karpuk, S. M.
Powiązania:
https://bibliotekanauki.pl/articles/2029257.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
44.30.+v
Opis:
An iterative procedure of calculation of reflectivities and transmission coefficients of light rays for an uniaxial film with a lapse rate of an index of refraction on a uniaxial substrate was gained by orienting the axis of anisotropy along the normal to the boundary. With its help the dependences of ellipsometric angles Δ and ψ for a linear, quadratic, and sine-shaped profiles of refractive indices of a uniaxial immersing film with optic axis oriented along the normal to the boundary were analyzed. The dependences of angles Δ andψ on quantity of an uptake and anisotropy of the film were also examined. The numerical modelling for ZnO films and Langmuir-Blodgett-like films on a melted quartz was carried out, and this allowed to draw conclusions of practical importance for the ellipsometric investigations of the film structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 6; 859-869
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Photoelectron Emission Yield from Layered Structures in Presence of Resonance-Enhanced X-Ray Propagation Effect
Autorzy:
Pełka, J. B.
Lagomarsino, S.
Cedola, A.
Di Fonzo, S.
Jark, W.
Powiązania:
https://bibliotekanauki.pl/articles/1963396.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.+g
78.20.-e
Opis:
In this work we present the new experimental results of total photoelectric yield as well as energy distribution of photoelectrons excited in a thin carbon film deposited on Ni mirror in the presence of resonance-enhanced X-ray propagation effect. The measurements were performed using conventional X-ray tube as a radiation source for the energy Cu K$\text{}_{α}$ (8047 keV). The spectra were recorded using a flow proportional electron counter with energy resolution of about 15%, and multichannel pulse height analyzer. A comparison with the reflectivity spectra recorded at the same time show an excellent correlation of both kinds of spectra, consistently with the theoretical prediction. A map of electron energy distribution is reported. Although the applied electron counter was of low energetic resolution the recorded spectra show characteristic regularities and indicate that the photoelectron yield excited in the presence of resonance-enhanced X-ray propagation effect can provide depth dependent information about impurity distribution and processes in thin layers.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 851-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoelastic Phenomena in Stressed Laser Heterostructures
Autorzy:
Kulakova, L.
Averkiev, N.
Lutetskiy, A.
Powiązania:
https://bibliotekanauki.pl/articles/1383501.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
78.20.Bh
78.20.hb
Opis:
The theoretical analysis of optical properties change in cubic crystals caused by simultaneous action of longitudinal and shear strains due to the photo-elastic interaction has been performed. The polarization characteristics change of a primary linear polarized light wave during propagation in the crystal has been studied. Results of the calculations were used to analyze photo-elastic phenomena in stressed heterostructures at the introduction of an alternating shear strain. The comparison of photo-elastic and acousto-electron phenomena in the laser heterostructures has been fulfilled. The results have been confirmed by the experiments in the InGaAs/GaAs structures at the action of shear strains excited by the ultrasonic waves.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 87-89
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Contactless Electroreflectance Study of Temperature Dependence of Fundamental Band Gap of ZnSe
Autorzy:
Krystek, W.
Malikova, L.
Pollak, F. H.
Tamargo, M. C.
Dai, N.
Zeng, L.
Cavus, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934065.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Fy
78.20.Wc
78.20.-e
Opis:
We report a systematic study of the temperature variation of the energy [E$\text{}_{0}$(T)] and broadening parameter [Γ$\text{}_{0}$(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E$\text{}_{0}$(T) and Γ$\text{}_{0}$(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E$\text{}_{0}$(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1013-1017
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 123

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