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Wyświetlanie 1-15 z 31
Tytuł:
Effect of Uniaxial Pressure on the Ferroelectric Phase Transition in Pb$\text{}_{5}$Ge$\text{}_{3}$O$\text{}_{11}$:Ba Crystals
Autorzy:
Molak, A.
Koralewski, M.
Saunders, G. A.
Juszczyk, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043697.pdf
Data publikacji:
2005-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.80.Bh
77.84.Bw
Opis:
The effect of uniaxial pressure up to 1 kbar applied perpendicular and parallel to c-axis, on the Curie temperature and electric permittivityε$\text{}_{c}$ of Ba-doped Pb$\text{}_{5}$Ge$\text{}_{3}$O$\text{}_{11}$ single crystals was investigated. The Curie temperature decreases with uniaxial pressure and the coefficientγ$\text{}_{i}$ (γ$\text{}_{i}$ ≡ δ T$\text{}_{c}$/δ X$\text{}_{i}$) is determined as -7 and -11 K kbar$\text{}^{-1}$ for the b- and c-axes, respectively. It was found that uniaxial pressure increases the phase transition diffuseness and the tricritical point cannot be achieved for this pyroelectric and ferroelectric single crystal.
Źródło:
Acta Physica Polonica A; 2005, 108, 3; 513-520
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Imaging Approach to the Study of Ferroelectric Domains and Raman Spectra of Multiferroic Boracites
Autorzy:
Iliev, M.
Hadjiev, V.
Íñiguez, J.
Pascual, J.
Powiązania:
https://bibliotekanauki.pl/articles/1807797.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
77.84.Bw
Opis:
The boracites with general formula $M_3B_7O_{13}X$ (M = divalent metal, X = Cl, Br, I), shortly denoted as M-X, are among the first known multiferroic materials. They exhibit a sequence of transitions from the high temperature paraelectric cubic phase to ferroelectric orthorhombic, monoclinic, trigonal phases, and finally to a monoclinic phase at low temperatures, where both ferroelectric and magnetic orders coexist. The lattice dynamics of boracites has been scarcely studied with the Raman spectroscopy, the main problem with non-cubic phases being the coexistence of twin variants with different crystallographic and polarization orientation. In this work, on the example of $Co_3B_7O_{13}Cl (Co-Cl)$, $Co_3B_7O_{13}Br (Co-Br)$ and $Ni_3B_7O_{13}Br (Ni-Br)$ we demonstrate that using the Raman microscopy imaging one can visualize the twin variants, follow their transformation through the crystallographic transitions, obtain Raman spectra from untwinned domains in exact scattering configurations, determine the Raman mode symmetries, and assign Raman lines to definite atomic motions. The effects of structural transitions and elemental substitution are discussed in close comparison with results of ab initio calculations of the phonon structure of the cubic phase.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 19-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The influence of partial isomorphic substitution on electronic and optical parameters of ABSO₄ group crystals
Autorzy:
Shchepanskyi, P.
Gaba, V.
Stadnyk, V.
Rudysh, M.
Brezvin, R.
Piasecki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1052706.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
77.84.-s
77.84.Bw
Opis:
First principles calculations of band energy, density of states and dielectric function of K_{1.75}(NH₄)_{0.25}SO₄ single crystals in Pnma structure is performed in the framework of density functional theory. In order to describe the exchange-correlation interaction the general gradient approximation and local density approximation are used. Character and genesis of main energy bands of the crystal are discussed and comparison with data set for K₂SO₄ isomorphic crystal performed. The influence of partial isomorphic substitution K→ NH₄ found itself mainly in altering the bottom of conduction band and decrease of band gap value. From the dielectric functions dependences, the refractive indices dispersion and absorption coefficient spectra are deduced. Obtained refractive indices satisfactorily agree with experimental data in the visible spectrum region.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 819-823
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric relaxation in Nb₆VSb₃O₂₅-ceramics
Autorzy:
Groń, T.
Filipek, E.
Piz, M.
Kukuła, Z.
Pawlus, S.
Powiązania:
https://bibliotekanauki.pl/articles/1070621.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.22.Ch
77.22.Gm
77.84.Bw
Opis:
Broadband dielectric spectroscopy measurements of Nb₆VSb₃O₂₅ showed that in both the real (ε') and imaginary (ε'') components of permittivity there is visible relaxation process strongly obscured by dc conductivity. Application of the electric modulus representation of the data enables to study temperature evolution of this relaxation together with conductivity relaxation. It was showed that the activation energies for both processes are close. Low-frequency loss tangent increases strongly with temperature, suggesting that in the compound under study additional energy losses are associated with the conduction of electric current, as determined by the Joule-Lenz law.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 355-358
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Król, K.
Kwietniewski, N.
Gierałtowska, S.
Wachnicki, Ł.
Sochacki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1033217.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Pr
77.84.Bw
77.55.dj
Opis:
The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 329-331
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric and AC Conductivity οf Potassium Perchlorate, $KCLO_{4}$
Autorzy:
Abdelmoneim, H.
Powiązania:
https://bibliotekanauki.pl/articles/1537744.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ph
77.22.Ch
77.84.Bw
Opis:
The AC conductivity σ (ω) and the complex dielectric permittivity ε*(ω) were studied as function of temperature 300 K < T < 600 K and at some selected frequencies (1-20 kHz) for polycrystalline sample of $KClO_4$. The differential thermal analysis (DTA) thermograph was also performed. The combined data support each other and indicate the existence of a structural phase transition at ≈ 575 K. Moreover, the temperature dependence of the ac conductivity behaves in accordance with Arrhenius relation, whereas the frequency dependent conductivity obeys the power law $σ(ω) = Aω^{s(T)}$. The behavior of s with temperature suggests that the hopping over the barrier model prevails. No evidence for the existence of a ferroelectric phase transition at the transition temperature.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 936-940
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
Autorzy:
Król, K.
Konarski, P.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1376053.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Pr
77.84.Bw
77.55.Dj
Opis:
This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1100-1103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Ferroelectric Properties of BiFeO₃/BaTiO₃ Heterostructures
Autorzy:
Aleszkiewicz, M.
Dybko, K.
Dynowska, E.
Dluzewski, P.
Przyslupski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1398586.pdf
Data publikacji:
2016-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.85.+t
77.80.-e
77.84.-s
77.84.Bw
Opis:
We report on preparation and electrical characterization of the epitaxial BaTiO₃ (BTO), BiFeO₃ (BFO) thin films and BFO/BTO bi- and multilayers, grown on (001) SrTiO₃ (STO) and $(LaAlO_3)_{0.3}(Sr_2TaAlO_6)_{0.7}$ (LSAT) substrates. The ferroelectric properties were characterized using the electric force microscopy method to image and switch the electric domains. This fabrication process opens the routes towards wide study of magnetoelectric effect in complex oxide heterostructures.
Źródło:
Acta Physica Polonica A; 2016, 130, 2; 511-515
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Crystal and Magnetic Structure of BiFeO$\text{}_{3}$ Using Neutron Diffraction
Autorzy:
Sosnowska, I.
Przeniosło, R.
Fischer, P.
Murashov, V. A.
Powiązania:
https://bibliotekanauki.pl/articles/1931685.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.84.Bw
61.12.Gz
75.50.Ee
Opis:
Polycrystalline material obtained from the ground single crystal of BiFeO$\text{}_{3}$ reported as not having the superstructure, shows the superstructure reflections in neutron diffraction pattern. The determined magnetic moment of antiferromagnetically ordered Fe$\text{}^{3+}$ ions is μ$\text{}_{Fe}$ = (3.70±0.03)μ$\text{}_{B}$ at 293 K.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 629-631
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Concentration of Defects at Grain Boundaries in Sintered Alumina Determined by Positron Annihilation Lifetime Spectroscopy
Autorzy:
Kansy, J.
Si Ahmed, A.
Liebault, J.
Moya, G.
Powiązania:
https://bibliotekanauki.pl/articles/2028969.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
77.84.Bw
61.72.Mm
Opis:
Sintered alumina samples of grain diameters spanning from 1.2 to 4.5μm have been investigated by positron annihilation lifetime spectroscopy. One series of samples was produced from material containing about 150 ppm impurities (mainly SiO$\text{}_{2}$). The second one was made from material having about 2700 ppm of various elements (SiO$\text{}_{2}$, MgO, CaO). Two models of positron trapping at grain boundaries are compared: The first one relates to the diffusion-limited regime; and the other one - to the transition-limited regime of trapping. As a result the relative change of surface concentration of defects at grain boundaries is determined. Additionally, the positron diffusion constant in bulk alumina at room temperature, D$\text{}_{+}$=0.36±10 cm$\text{}^{2}$/s, is estimated.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 737-742
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Characterization of ZnO Nanorods Grown by the Ultra-Fast and Low Temperature Hydrothermal Process
Autorzy:
Witkowski, B.
Ivanov, V.
Wachnicki, Ł.
Gierałtowska, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1185890.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
61.46.+w
81.10.Dn
77.84.Bw
Opis:
The results of photoluminescence investigations of zinc oxide nanorods are reported. These nanorods grown on undoped silicon substrates were obtained by low temperature and ultra-fast version of a microwave-assisted hydrothermal method. The photoluminescence investigations show very high quality of the obtained material. From photoluminescence studies we conclude the lack of carrier localization effects. The photoluminescence is dominated by band gap edge emission of bound excitonic (donor bound excitons) origin. Thus, the photoluminescence quenching observed at increased temperatures is associated with thermal ionization of shallow donors. From photoluminescence analysis (changes of photoluminescence line width) a strength of exciton-acoustic phonon coupling is evaluated.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1199-1201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conduction Mechanism of 4-Aminoantipyrine as a New Organic Semiconductor
Autorzy:
Yahia, I.
Powiązania:
https://bibliotekanauki.pl/articles/1198658.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Me
78.40.Fy
72.10.Fk
77.84.Bw
Opis:
X-ray diffraction pattern of 4-aminoantipyrine was studied and it is a single phase with a polycrystalline structure. 4-aminoantipyrine has hexagonal structure with space group P6/mcc. The electrical properties of 4-aminoantipyrine were studied in the temperature range (303-373 K) below the melting point of the studied compound and in the frequency range (100 Hz-100 kHz). The obtained results of dc conductivity showed a positive temperature coefficient at the lower temperatures and a negative temperature coefficient at the higher temperatures. The ac conductivity obeys the power law. Ac conductivity can be reasonably interpreted in terms of overlapping-large polaron tunneling model and the correlated barrier hopping model. 4-aminoantipyrine is a good candidate for electronic device due to its electrical conductivity and capacitance.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1167-1171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signature of the Spin Triplet Phase in $La_{0.7}Sr_{0.3}MnO_3$/$Yba_2Cu_3O_7$/$La_{0.7}Sr_{0.3}MnO_3$ Trilayers
Autorzy:
Przyslupski, P.
Dybko, K.
Werner-Malento, K.
Aleshkevych, P.
Wojcik, M.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1536907.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.Ha
74.78.Fk
75.70.Cn
77.84.Bw
Opis:
Differential dynamical subgap transport measurements were performed on LSMO/YBCO/LSMO trilayers to probe local evolution of the Andreev bound states which are manifested as the zero bias conductance peak. Dynamical conductivity dI/dV vs. magnetic field measured in current in plane and current perpendicular to plane geometries show nonmonotonic behavior with maximum at about 500 Oe. The shape of the zero bias conductance peak measured in current in plane geometry is sharp, whereas zero bias conductance peak measured in current perpendicular to plane geometry demonstrates V shape. These shapes of the zero bias conductance peak were predicted theoretically for unconventional p-wave spin triplet phase superconductor and superconductor with d-wave symmetry of the order parameter, respectively.
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 313-315
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orthorhombic Phase of $La_{0.5}Bi_{0.5}NiO₃$ Studied by First Principles
Autorzy:
Kaczkowski, J.
Pugaczowa-Michalska, M.
Jezierski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1397031.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
71.20.-b
71.20.Nr
77.84.Bw
Opis:
The aim of presented first principles study of $La_{0.5}Bi_{0.5}NiO₃$ is to investigate electronic structure of orthorhombic phase Pbnm. The calculations show that metallicity and magnetism of the system are strongly related with hybridization between Ni 3d and O 2p. To improve the quality of the electronic structure description of the system, especially the treatment of correlation for the Ni 3d, we employ GGA, LDA, and GGA+U, LDA+U. The LSDA results give good agreement with experiment. Thus, the screening effects originating from the hybridized Ni 3d and O 2p electrons are sufficiently strong that they reduce the electronic correlations in the $La_{0.5}Bi_{0.5}NiO₃$, making it a weakly correlated metal.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 408-410
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 31

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