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    Wyświetlanie 1-9 z 9
    Tytuł:
    Conductance Quantization in the Melt-Spun Cubic $RCu_5$ (R = Gd, Ho, Lu) Nanowires
    Autorzy:
    Szorcz, M.
    Susła, B.
    Wawrzyniak, M.
    Lipiński, S.
    Idzikowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810416.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.Ad
    73.21.Hb
    73.63.Rt
    Opis:
    Conductance quantization of heterocontacts between tungsten (W) tip and cubic $RCu_5$ (R = Gd, Ho, Lu) binary compounds prepared by melt-spinning was observed in nanowires produced dynamically using piezoelectric actuator. The conductance stepwise behaviour of the nanowires was directly observed with a storage oscilloscope. Quantum units of the nanowires conductance measured in their paramagnetic states are presented and discussed in terms of the Landauer formalism.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 165-167
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Statistical Investigation of Current-Voltage Characterization in Single Molecule-Metal Junctions
    Autorzy:
    Kirchner, T.
    Briechle, B.
    Scheer, E.
    Wolf, J.
    Huhn, T.
    Erbe, A
    Powiązania:
    https://bibliotekanauki.pl/articles/1490078.pdf
    Data publikacji:
    2012-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.-b
    73.63.Rt
    81.07.Nb
    Opis:
    We show statistical measurements of single molecule-metal contacts using the mechanically controllable break junction technique. The measurements are carried out in a solvent, in order to allow in situ binding of the molecules to the metallic contacts during the measurements. Statistics is gathered by opening and closing the junctions repeatedly and recording current-voltage characteristics at various stages of the opening and closing curves. By modeling the data with a single level model we can extract parameters such as the position of the molecular energy level, which carries the current, and the coupling between the metal and the molecule. In first experiments we use this method to characterize different anchoring groups, which mediate the mechanical and electrical coupling between the metallic electrodes and the molecules. We use tolane molecules, which are structurally simple, as model systems for this purpose.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 2; 410-415
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spin and Charge Current in a Short Semiconducting Chain of Paramagnetic Ionic Blocks
    Autorzy:
    Lehmann-Szweykowska, A.
    Wojciechowski, R.
    Micnas, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810512.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.25.Dc
    73.61.Le
    73.63.Rt
    Opis:
    We deal with the electric current flowing through a short chain of paramagnetic ionic blocks, coupled to metallic electrodes in the serial configuration. An original three-band Hubbard-Anderson Hamiltonian is diagonalised at the level of the single ionic block. A minimal but sufficient set of the latter's four hybridised eigenstates serves as a basis for the determination of the time-ordered temperature-dependent matrix Green functions, in terms of which all the current-voltage (I-V) characteristics can be expressed provided the coupling to the electrodes is weak. The separation of the opposite-spin contributions to the electric current and, consequently, the spin current from the left to right electrode can result from the on-site Coulomb repulsion term of Hubbard-Anderson Hamiltonian, with no spin polarisation at the electrodes, but with the Zeeman-like coupling of the centre to either a molecular or an external magnetic field.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 260-262
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Aharonov-Bohm Effect and Valley Polarization in Nanoscopic Graphene Rings
    Autorzy:
    Rycerz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810559.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.-b
    73.63.Rt
    85.35.Ds
    Opis:
    The conductance of an Aharonov-Bohm interferometer is studied in a tight-binding model of graphene. Two point contacts with zigzag edges, which function as valley filters, are connected by a ring with an irregular boundary. We find that the narrowest rings show strong current suppression and nearly sinusoidal magnetoconductance oscillations, whereas for wide rings higher harmonics are equally represented. In the intermediate width range, oscillations with a basic periodicity are suppressed when two valley filters have opposite polarity, while higher harmonics are unaffected. The effect is interpreted in terms of a relatively weak intervalley scattering in the system.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 322-325
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of External Contacts on Edge Magnetic Moments in Graphene Nanoribbons
    Autorzy:
    Krompiewski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1386979.pdf
    Data publikacji:
    2015-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Vp
    73.63.Rt
    84.32.Dd
    Opis:
    The main problem of interest of this study is the influence of external electrodes on the edge magnetic moments in graphene nanoribbons. The studies are carried out within the framework of tight-binding method (for π -state electrons) and the Landauer-Büttiker formalism combined with the Green function technique. It is shown that the edge atom moments get reduced (and eventually disappear) when the graphene nanoribbon/electrode interface becomes more and more transparent for electrons.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 2; 523-524
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Current-Voltage Characteristics of Nanowires Formed at the $Co-Ge_{99.99}Ga_{0.01}$ Interface
    Autorzy:
    Wawrzyniak, M.
    Maćkowski, M.
    Śniadecki, Z.
    Idzikowski, B.
    Martinek, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1537104.pdf
    Data publikacji:
    2010-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    79.60.Jv
    73.63.Rt
    Opis:
    We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the $Co-Ge_{99.99}Ga_{0.01}$ interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and $Ge_{99.99}Ga_{0.01}$. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 2; 375-378
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Correlation Histograms in Conductance Measurements of Nanowires Formed at Semiconductor Interfaces
    Autorzy:
    Wawrzyniak, M.
    Martinek, J.
    Susła, B.
    Ilnicki, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810603.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    79.60.Jv
    73.63.Rt
    Opis:
    We demonstrate experimentally that conductance steps can occur in nanowires formed at metal-semiconductor junctions, between a cobalt tip and a germanium surface revealing long-duration plateaus at reproducible levels. The high reproducibility of the conductance traces obtained leads to very sharp peaks in the conductance histogram suggesting formation of stable atomic configurations. We develop a new type of correlation analysis of the preferred conductance values that provide new type of information on a few-atomic-nanocontact formation dynamics.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 384-386
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Linear and Non-Linear Response in T-Shaped Electron Waveguides
    Autorzy:
    Bek, M.
    Bułka, B.
    Wróbel, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791289.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.-b
    73.63.Rt
    85.35.Ds
    85.35.Be
    Opis:
    We present theoretical studies of three-terminal ballistic junction in linear and non-linear regime. Various conductance and voltage dips and peaks are observed and their origin is explained as influence of the bend resistance and the threshold effect.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 829-831
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Behaviour of Nanostructured Porous Silicon
    Autorzy:
    Azim-Araghi, M.
    Ashrafabadi, S.
    Kanjuri, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419847.pdf
    Data publikacji:
    2012-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.30.+y
    73.40.Sx
    73.50.-h
    73.90.+f
    73.63.Rt
    68.37.Hk
    Opis:
    The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at $10^2 - 10^5$ Hz frequency range.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 1; 170-173
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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