Current-Voltage Characteristics of Nanowires Formed at the $Co-Ge_{99.99}Ga_{0.01}$ Interface

We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the $Co-Ge_{99.99}Ga_{0.01}$ interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and $Ge_{99.99}Ga_{0.01}$. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.