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Wyświetlanie 1-15 z 17
Tytuł:
Improvement of Anode/HTL Interface Properties Using Self-Assembled Monolayer in Organic Electronic Devices
Autorzy:
Yaman, M.
Yagmurcukardes, N.
Havare, A.
Aydin, H.
Ocakoglu, K.
Okur, S.
Powiązania:
https://bibliotekanauki.pl/articles/1400034.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
Opis:
Fabrication and characterization of highly efficient organic light-emitting diode with surface modification of indium tin oxide anodes by using self-assembled monolayer technique have been studied. Four different self-assembled molecules, K-28 ruthenium complex, octadecylamine hydrochloride, octadecyltrichlorosilane and mercaptohexdecanoic acid are used to modify ITO surface to improve the interface properties. Space charge limited currents measurements have been used to evaluate carrier mobility under steady state current. The results show that the surface properties such as the stability of ITO anode layer have significant effects on charge injection in organic light-emitting diode devices.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 459-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1381776.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1371-1373
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
Autorzy:
Andreev, V.
Bondarenko, G.
Maslovsky, V.
Stolyarov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402221.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
Opis:
Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 887-890
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photo-Effects in In/p-CuInSe$\text{}_{2}$ Schottky-Type Junction
Autorzy:
Opanowicz, A.
Kościelniak-Mucha, B.
Powiązania:
https://bibliotekanauki.pl/articles/1887214.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
72.40.+w
Opis:
The voltage-dependent photocurrent and the short-circuit photocurrent generated by the modulated light in the In/p-CuInSe$\text{}_{2}$ junction were measured. The results suggest that the recombination of carriers occurs in the metal-semiconductor interface as well as in the recombination centres present in the space charge region of the junction. Both the interface recombination and the recombination in the centres can be modified by illumination of the junction.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 411-414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
SiO$\text{}_{2}$ Layer Charge State Variation in Fowler-Nordheim Tunneling Regime
Autorzy:
Strzałkowski, I.
Kowalski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1967939.pdf
Data publikacji:
1997-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
Opis:
The charge build-up and its changes in the amorphous SiO$\text{}_{2}$ layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO$\text{}_{2}$ traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Źródło:
Acta Physica Polonica A; 1997, 92, 3; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor
Autorzy:
Illarionov, Y.
Vexler, M.
Suturin, S.
Fedorov, V.
Sokolov, N.
Powiązania:
https://bibliotekanauki.pl/articles/1490944.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.40.Gk
73.61.Ng
Opis:
Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds $10^3$ approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 158-161
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
Autorzy:
Czapkiewicz, M.
Cywiński, G.
Dybko, K.
Siekacz, M.
Wolny, P.
Gierałtowska, S.
Guziewicz, E.
Skierbiszewski, C.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403637.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
73.61.Ng
73.23.-b
Opis:
We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1026-1028
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Stimulated Emission of Electrons from Deep Traps in SiO$\text{}_{2}$
Autorzy:
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1929724.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
73.60.Hy
Opis:
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO$\text{}_{2}$ layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO$\text{}_{2}$.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 701-704
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Trap Generation in SiO$\text{}_{2}$ Films of Si MOSFETS by Hot Electrons
Autorzy:
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Bąkowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1921597.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
73.60.Hy
Opis:
Trap generation in amorphous SiO$\text{}_{2}$ films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10$\text{}^{19}$ e/cm$\text{}^{-2}$ and injected current density in the range 2-300 μA/cm$\text{}^{2}$ were determined and discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 685-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Description of Electrical Characteristics of Semiconducting Compound-Insulator Interface on the Basis of the Model of Interface States Distributed in Energy and in Space
Autorzy:
Kochowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1921720.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.20.-r
73.40.Qv
Opis:
The calculation results of the influence of interface state parameters on capacitance-voltage and conductance-voltage characteristics of n-GaAs metal insulator semiconductor structures are presented. The U-shaped distribution in the energy dimension and Gaussian-like distribution in the space dimension for insulator-semiconductor interface states are assumed.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 761-764
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Compact Modeling for Submicron Fully Depleted SOI MOSFETs
Autorzy:
Remmouche, R.
Boutaoui, N.
Bouridah, H.
Powiązania:
https://bibliotekanauki.pl/articles/1491285.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
85.30.Tv
85.40.Bh
Opis:
In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 190-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
Autorzy:
Godlewski, M.
Guziewicz, E.
Gierałtowska, S.
Łuka, G.
Krajewski, T.
Wachnicki, Ł.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807598.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.-p
73.40.Lq
73.40.Qv
81.05.Dz
81.15.-z
Opis:
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-19-S-21
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Stress in MOS Structures with Micro-Raman Scattering
Autorzy:
Borowicz, P.
Borowicz, L.
Brzezińska, D.
Powiązania:
https://bibliotekanauki.pl/articles/1807592.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
73.40.Qv
32.70.Jz
78.30.-j
Opis:
Two kinds of samples were investigated with micro-Raman spectroscopy. MOS structures having poly-silicon gates with metallic contact were made of Al with addition of 1% Cu. The other type of the sample was Si wafer subjected to surface oxidation. The position of the sample was changed along z-axis in order to maximize the Raman signal coming from different layers of the structure. Two MOS structures were studied, both prepared in the same process, and after that only one was thermally-treated at temperature 400°C. The spectra coming from different layers of the structure were analyzed numerically using Lorentzian profile. The authors want to point out that the measurements of the Raman signal performed through the metallic contact of the poly-silicon gate gave anomalously large signal coming from silicon structure. This effect was observed only for thermally threated sample. This suggest that in the case of thermally-treated structure the signal observed through the metallic contact was magnified by surface-enhanced Raman scattering phenomenon.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-42-S-44
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:
Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:
Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of $SiO_2$/n-Type 4H-SiC Interface
Autorzy:
Król, K.
Sochacki, M.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1363825.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Qv
68.55.ag
72.20.-i
72.25.-b
Opis:
Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of $SiO_2$ by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of $SiO_2$/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the $SiO_2$/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of $SiO_2$/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of $SiO_2$/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1033-1037
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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