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    Wyświetlanie 1-10 z 10
    Tytuł:
    High Temperature Surface Conductivity of Hydrogenated Diamond Films Exposed to Humid Air
    Autorzy:
    Stec, K.
    Szroeder, P.
    Benzhour, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1536522.pdf
    Data publikacji:
    2010-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.25.+i
    81.05.ug
    Opis:
    Surface conductivity of thin diamond films was measured as a function of temperature up to 450°C. Hydrogenated diamond was synthesized by chemical vapor deposition in hydrogen/carbon plasma. Low values of charge carrier activation energy ( ≈ 10 meV) were observed, when hydrogenated diamond films were exposed to the ambient humid air. However, the activation energy increased by two orders of magnitude as film temperature exceeded 300°C. We have attributed this behavior to the desorption of the $H_2O$ adlayer. The jump of the activation energy did not occur, when experiment was performed in vacuum. We have also shown that donor doping leads to the up-shift of the Fermi level much above the acceptor-like band gap levels induced by surface C-H bonds, which cannot be compensated by transfer of electrons from diamond to the double $H-H_2O$ layer.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 3; 511-514
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through two step passivation technique
    Autorzy:
    Michalczewski, K.
    Ivaldi, F.
    Kubiszyn, Ł.
    Benyahia, D.
    Boguski, J.
    Kębłowski, A.
    Martyniuk, P.
    Piotrowski, J.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055156.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    73.25.+i
    82.45.Cc
    Opis:
    We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 325-328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of Laser Ablated YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties
    Autorzy:
    Perrin, A.
    Guilloux-Viry, M.
    Castel, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964240.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.25.+i
    81.15.-z
    68.55.Jk
    Opis:
    The graphoepitaxial growth of c-axis YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: ⟨100⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 0}$ notation or ⟨110⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 45}$ notation. The ratio of c$\text{}_{⊥ 45}$/c$\text{}_{⊥ 0}$ in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channeling patterns and reflection high energy electron diffraction diagrams. The coexistence of c$\text{}_{⊥ 0}$ and c$\text{}_{⊥ 45}$ domains creates high angle grain boundaries. No degradation of T$\text{}_{c}$, residual resistance ratio (RRR) or ΔT$\text{}_{c}$ is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (R$\text{}_{S}$ at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susceptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then R$\text{}_{S}$ are discussed.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 115-125
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces
    Autorzy:
    Marinskiy, D.
    Edelman, P.
    Snider, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363397.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.-g
    73.61.-r
    68.37.Ps
    73.25.+i
    Opis:
    Ionic diffusion of $(H_2O)_{n}^{+}$ and $CO¯_3$ on $SiO_2$ surfaces has been quantified using Kelvin force microscopy measurement of ion distribution change after small spot corona charge. For both positive and negative ionic species, the concentration profiles versus time follow the two-dimensional surface diffusion enabling a determination of corresponding diffusion coefficients. On a thermally grown $SiO_2$ surface, diffusion coefficients of $(H_2O)_{n}^{+}$ and $CO¯_3$ ions were 2.2 × $10^{-11} cm^2$/s and 4.8 × $10^{-12} cm^2$/s, respectively. On a chemically cleaned $SiO_2$ surface, diffusion coefficients of $(H_2O)_{n}^{+}$ and $CO¯_3$ ions were 7.5 × $10^{-9} cm^2$/s and 2.4 × $10^{-9} cm^2$/s, respectively. Mathematical analysis of the surface potential decay yields an additional parameter - capacitance equivalent thickness.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 997-1002
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electric Conductivity of Carbon Nanoparticles Stimulated by Electric Field
    Autorzy:
    Markowski, D.
    Kempiński, W.
    Kempiński, M.
    Trybuła, Z.
    Kaszyńska, K.
    Śliwińska-Bartkowiak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535906.pdf
    Data publikacji:
    2010-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.Pr
    73.21.La
    73.23.Hk
    73.25.+i
    73.63.-b
    73.23.-b
    Opis:
    Host-guest interactions can be the unique method of spin manipulation in nanoscale. Strong changes in spin localization are generated when potential barriers between nanographitic units of activated carbon fibers are modified by interaction with adsorbed molecules. Stronger modifications occur when dipolar guest molecules are stimulated with external electric field. We report experimental results which show the influence of electric field on the spin localization in activated carbon fibers.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 3; 457-458
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs
    Autorzy:
    Havare, A.
    Okur, S.
    Yagmurcukardes, N.
    Can, M.
    Aydin, H.
    Seker, M.
    Demic, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400033.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Hb
    73.20.Mf
    73.21.-b
    73.22.-f
    73.25.+i
    73.40.Ei
    73.40.Jn
    73.40.Ns
    Opis:
    In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 456-458
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spin-Resolved Photoemission Spectroscopy
    Autorzy:
    Kakizaki, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1963305.pdf
    Data publikacji:
    1997-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.-r
    75.25.+z
    79.60.-i
    Opis:
    The spin-resolved photoemission spectroscopy is utilized to study the spin dependent electronic structures of solids and solid surfaces. The spin- and angle-resolved valence band spectra of ferromagnetic Ni are investigated by comparing with an atomic model and a one-electron band calculation. The electron correlation effects which appear in the spin-resolved photoemission spectra are discussed. The spin dependent electronic structures of S atoms adsorbed on Fe(100) surface are also investigated.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 4; 649-658
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Single Particle and Collective Spin Excitations in Semimagnetic Quantum Wells
    Autorzy:
    Perez, F.
    Jusserand, B.
    Richards, D.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038315.pdf
    Data publikacji:
    2004-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.25.Dc
    73.21.-b
    75.70.-i
    78.30.-j
    Opis:
    Collective and single-particle spin-flip excitations of a two-dimensional electron gas in a semimagnetic Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well are observed by resonant Raman scattering. Application of a magnetic field splits the spin-subbands and a spin-polarization is induced in the electron gas. Above some critical field, a collective spin-flip mode, which disperses with in-plane wave vector, dominates the spectra. The energy of this mode is given by the bare Zeeman energy at vanishing wave vector as predicted by Larmor's theorem and its in-plane dispersion is well described by a model of the interacting polarizability of a spin polarized electron gas when both exchange and correlation are taken into account.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 3; 311-317
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of $SiO_2$/n-Type 4H-SiC Interface
    Autorzy:
    Król, K.
    Sochacki, M.
    Szmidt, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1363825.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    68.55.ag
    72.20.-i
    72.25.-b
    Opis:
    Silicon carbide (SiC) is the only wide-bandgap semiconductor capable of forming native dielectric layer of $SiO_2$ by thermal oxidation. This unique property of SiC combined with its high thermal conductivity and high critical field makes this semiconductor material suitable for high power electronic devices. Unfortunately, the state-of-the art technology does not use the full benefits of the material, especially in the case of MOSFET transistors. This is caused by insufficient electrical parameters of $SiO_2$/SiC interface. Two-component structure of the material and its high density result in high level of interface traps reducing the surface mobility and thus increasing series resistance of the device. One of the proposed methods of reducing the trap density in SiC MOS structure is a shallow nitrogen implantation prior to oxidation. This technique is based on the observation that introducing nitrogen into the $SiO_2$/SiC system results in significant reduction of trap states density and increase of the channel effective mobility. The shallow implantation technique has been reported to be as much effective as nitric oxide annealing which is one of the most effective techniques for oxide quality improvement in case of SiC. Unlike the diffusion based techniques, like postoxidation annealing, implantation of the nitrogen prior oxidation has the possibility of nitrogen concentration control near the oxide interface during oxidation process itself. This property is important since it was shown that the improvement degree is directly proportional to amount of nitrogen built in the vicinity of $SiO_2$/SiC interface during oxidation. However, previous investigations about this technique were inconclusive about the influence of implantation parameters and process conditions on observed effects. Both improvement and deterioration of interface quality was observed by different researchers. This behavior was never explained clearly. The primary objective of this research is to analyze the impact of implantation conditions on electrical properties of $SiO_2$/SiC MOS structure. This analysis is used to evaluate a hypothetical description of physical phenomena during oxidation of shallowly implanted substrates.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1033-1037
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MFM Investigations of $[NiFe//Au//Co//Au]_N$ Multilayers
    Autorzy:
    Bazarnik, M.
    Dabrowski, J.
    Czajka, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1810474.pdf
    Data publikacji:
    2009-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Ac
    74.25.Ha
    75.30.Gw
    75.60.Ch
    75.70.-i
    75.70.Rf
    Opis:
    Magnetic force microscopy measurements combined with computer simulations were applied to investigate the strengths of magnetic field over the $[NiFe//Au//Co//Au]_N$ multilayers with in-plane and out-of-plane anisotropy observed for NiFe and Co layers, respectively. All measurements were performed in air atmosphere at room temperature. Dimensions and density of magnetic domains were estimated. The distribution of magnetization directions was deduced from comparison of magnetic force microscopy with the simulation results. Some sort of modulation in stray magnetic field was observed, but till now it is of unknown origin.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 1; 220-222
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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