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Wyszukujesz frazę "73.21.Fg" wg kryterium: Temat


Tytuł:
Anisotropy of the Conductivity in the Asymmetric Quantum Wells
Autorzy:
Majchrowski, K.
Paśko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1811959.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.21.Fg
Opis:
Gorbatsevich et al. and Kibis suggested that a number of interesting galvano-magnetic effects could be observed in quantum structures where the symmetry with respect to the space coordinates inversion and time-reversal are broken simultaneously. In the paper of Kibis for example, the infinite triangular quantum well in an external magnetic field was considered and the anisotropy of electron momentum transfer due to interaction with phonons was predicted. The role of magnetic field was to provide the time-invariance breaking. In this work we considered the effect of anisotropy of electron momentum transfer due to interaction with polarized light using more realistic model of finite triangular quantum well. This anisotropy leads to the anisotropy of the real part of photoconductivity and as it follows from our calculations, the effect though not very great, could be measurable for the attainable values of magnetic field B≈5 T and the widths of quantum well.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1241-1246
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells
Autorzy:
Malissa, H.
Jantsch, W.
Mühlberger, M.
Schäffler, F.
Wilamowski, Z.
Draxler, M.
Bauer, P.
Powiązania:
https://bibliotekanauki.pl/articles/2038126.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
85.75.-d
Opis:
We investigate the spin resonance of electrons in one-sided modulation doped Si$\text{}_{1-x}$Ge$\text{}_{x}$ (x=0-10%)) quantum wells defined by Si$\text{}_{0.75}$Ge$\text{}_{0.25}$ barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Quantum Cascade Lasers in Strong Magnetic Field
Autorzy:
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505456.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We have developed a comprehensive rate equations based model for calculating the optical gain in the active region of a quantum cascade laser in magnetic field perpendicular to the structure layers, which takes into account all the relevant scattering channels. The model is applied to gain-optimized quantum cascade laser active region, obtained by a systematic optimization procedure based on the use of genetic algorithm, which we have previously set up for designing novel structures and improving performance of existing ones. It has proven to be very efficient in generating optimal structures which emit radiation at specified wavelengths corresponding to absorption fingerprints of particular harmful pollutants found in the atmosphere. We also illustrate another interesting prospective application of quantum cascade laser-type structures: the design of metamaterials with tunable complex permittivity, based on amplification via intersubband transitions. In this case, the role of the magnetic field is to assist the attainment of sufficient optical gain (population inversion), necessary to effectively manipulate the permittivity and fulfill the conditions for negative refraction (left-handedness).
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 99-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures
Autorzy:
Ryczko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1376073.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
71.55.Eq
Opis:
Using a multiband k·p theory the band structure properties of type-II W-design AlSb/InAs/GaInSb/InAs/AlSb quantum wells on GaSb substrates of various crystallographic orientations have been investigated. Such structures are predicted for the emission in a broad range of mid infrared from below 3 μm to beyond 10 μm. The energy of the fundamental optical transition and the corresponding oscillator strength have been determined in function of the layer structure details and versus the substrate orientation. In addition, the resulting optical anisotropy in such type-II quantum wells has been derived.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1149-1153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dyakonov--Perel Spin Relaxation Suppressed by an Applied Magnetic Field
Autorzy:
Wilamowski, Z.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036865.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Rb
73.21.Fg
85.75.-d
Opis:
We observe a strong anisotropy of spin relaxation and a decrease in the spin relaxation rate with increasing electron mobility in contrast to predictions of the classical D'yakonov-Perel spin relaxation model. We show that for high electron mobility the cyclotron motion causes an additional modulation of spin-orbit coupling, leading to an effective suppression of the spin relaxation rate.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 671-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Exciton-Longitudinal Optical Phonon Interaction οn Exciton Binding Energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ Quantum Wells
Autorzy:
Onodera, C.
Yoshida, M.
Powiązania:
https://bibliotekanauki.pl/articles/1535752.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.20.Bh
81.05.Dz
Opis:
We study the effects of exciton-longitudinal optical phonon interaction on the exciton binding energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells. The heavy- and light-hole exciton binding energies increase to the exciton-logitudinal optical phonon interaction. The increase in the maximum heavy-hole (light-hole) exciton binding energy for x=0.74 is 68.3 meV (55.0 meV). In narrow ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells SQWs, the heavy- and light-hole exciton binding energies exceed the longitudinal optical phonon energy of ZnS when x ≥ 0.1.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 643-647
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrically Detected Magnetic Resonance
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Jantsch, W.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038127.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Pk
72.25.Rb
73.21.Fg
Opis:
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 591-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:
Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:
https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:
The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron-Hole Distribution and Exciton Condensed Phase Formation in Semiconductor Quantum Wells
Autorzy:
Chernyuk, A. A.
Sugakov, V. I.
Powiązania:
https://bibliotekanauki.pl/articles/2046909.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Lk
73.21.Fg
Opis:
We study the development of ring luminescence of indirect excitons at macroscopical distances from the central excitation spot in quantum well structures. The Landau model for exciton condensation generalized for particles with finite lifetimes in conditions of inhomogeneous excitation is proposed. The transition between the fragmented and continuous rings and the temperature dependence of the effects are considered. The irradiation of the system by two spatially separated laser spots is simulated as well.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 169-174
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic structure calculations of InP-based coupled quantum dot-quantum well structures
Autorzy:
Andrzejewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1160527.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.21.Fg
73.22.Dj
74.50.+r
Opis:
In this work we investigate the electronic structure of coupled 0D-2D nanostructures. The respective confined state energy levels in a quantum dot-quantum well system are calculated for various conduction band offsets - between the quantum dot and surrounding material. The calculated electron and hole energy levels with their wave functions allow determining if the wave functions are within the injector quantum well or within the quantum dot and if the carrier positions on the energy scale are appropriate from the point of view of a possible laser structure utilizing the so-called tunnel injection scheme. It is shown that for an adequate width of an injector quantum well and the conduction band offsets designing an optimal tunnel injection structure is possible.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-97-A-99
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure
Autorzy:
Szczepański, T.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402583.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.21.Fg
85.75.Mm
Opis:
We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Autorzy:
Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813388.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
73.21.Fg
73.40.Kp
Opis:
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Electron Mobility and Photoconductivity in Quantum Well $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ οn InP Substrate
Autorzy:
Kulbachinskii, V.
Lunin, R.
Yuzeeva, N.
Galiev, G.
Vasilievskii, I.
Klimov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1399881.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
Isomorphic $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well $In_{0.53}Ga_{0.47}As$ or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Siekacz, M.
Kryśko, M.
Feduniewicz-Żmuda, A.
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Nevou, L.
Kheirodin, N.
Julien, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811923.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.De
68.65.Fg
73.21.Fg
81.15.Hi
Opis:
GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1093-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Binding Energy and Oscillator Strength in a Shallow Quantum Well in an External Magnetic Field
Autorzy:
Zięba, P.
Piętka, B.
Łusakowski, J.
Tralle, I.
Powiązania:
https://bibliotekanauki.pl/articles/1402589.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
75.75.-c
73.21.Fg
62.20.-x
Opis:
We discuss the influence of an external magnetic field on the exciton energy and the exciton oscillator strength in the shallow quantum wells. We include into consideration the Coulomb attraction between electron and hole, which is rarely taken into account. We self-consistently solve the Schrödinger equation to compare the obtained results with the experimental values.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 237-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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