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Wyświetlanie 1-15 z 48
Tytuł:
Exciton Binding Energy and Oscillator Strength in a Shallow Quantum Well in an External Magnetic Field
Autorzy:
Zięba, P.
Piętka, B.
Łusakowski, J.
Tralle, I.
Powiązania:
https://bibliotekanauki.pl/articles/1402589.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
75.75.-c
73.21.Fg
62.20.-x
Opis:
We discuss the influence of an external magnetic field on the exciton energy and the exciton oscillator strength in the shallow quantum wells. We include into consideration the Coulomb attraction between electron and hole, which is rarely taken into account. We self-consistently solve the Schrödinger equation to compare the obtained results with the experimental values.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 237-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shake-Up Processes in Photoluminescence of Two-Dimensional Holes in a High Magnetic Field
Autorzy:
Wójs, A.
Bryja, L.
Misiewicz, J.
Potemski, M.
Reuter, D.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047047.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Cc
71.35.Ji
73.21.Fg
Opis:
Recombination of excitons and positive trions is studied by two-beam photoluminescence of a two-dimensional hole gas in a high magnetic field. The singlet, dark-triplet and bright-triplet states of a free trion are resolved, and their binding energies are determined. Recombination of acceptor-bound trions is also detected, including a low-energy cyclotron replica, corresponding to a hole shake-up process. Identification of all these different transitions was possible by analysis of optical selection rules and the comparison of experimental spectra with realistic numerical calculations.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 429-435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dyakonov--Perel Spin Relaxation Suppressed by an Applied Magnetic Field
Autorzy:
Wilamowski, Z.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036865.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Rb
73.21.Fg
85.75.-d
Opis:
We observe a strong anisotropy of spin relaxation and a decrease in the spin relaxation rate with increasing electron mobility in contrast to predictions of the classical D'yakonov-Perel spin relaxation model. We show that for high electron mobility the cyclotron motion causes an additional modulation of spin-orbit coupling, leading to an effective suppression of the spin relaxation rate.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 671-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
Autorzy:
Vorobjev, L.
Firsov, D.
Shalygin, V.
Panevin, V.
Sofronov, A.
Ustinov, V.
Zhukov, A.
Egorov, A.
Andrianov, A.
Zakhar'in, A.
Ganichev, S.
Danilov, S.
Kozlov, D.
Powiązania:
https://bibliotekanauki.pl/articles/1813218.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Fg
71.55.-i
71.55.Eq
73.21.Fg
73.61.Ey
78.55.Cr
78.66.-w
78.67.De
Opis:
We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 925-928
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Nature of Potential Fluctuations in the MBE CdTe/CdMgTe Quantum Well in a Magnetic Field: Experiment and Theory
Autorzy:
Szot, M.
Karpierz, K.
Avetisyan, A. A.
Djotyan, A. P.
Kossut, J.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047014.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
72.15.Rn
72.80.Ey
73.21.Fg
Opis:
Far infrared photoconductivity spectra of CdTe/Cd$\text{}_{0.8}$Mg$\text{}_{0.2}$Te quantum well uniformly n-type doped with iodine in barriers and in the well were investigated as a function of the magnetic field. The spectra were recorded for several fixed far infrared photon energies and peaks corresponding to intra donor transitions were observed. The magnetic field at which the peaks were observed was the same for all far infrared photon energies used. This is interpreted as an evidence of the presence of fluctuations of the electrostatic potential - quantum dots which reduce the dimensionality of the potential in which a shallow donor is placed. A characteristic size of the fluctuations was found to be of 23-25 nm and 30-40 nm. Theoretical calculations show a nonmonotonic dependence of the electron binding energy on the donor centre in such quantum dot, as a function of magnetic field. This explains why the position of experimentally observed peak is insensitive to far infrared photon energy used. Temperature evolution of spectra and the theoretical model proposed, indicate similarities between fluctuations in the two-dimensional structure investigated and fluctuations in bulk systems.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 379-387
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure
Autorzy:
Szczepański, T.
Dugaev, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402583.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.21.Fg
85.75.Mm
Opis:
We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range
Autorzy:
Syperek, M.
Ryczko, K.
Dallner, M.
Dyksik, M.
Motyka, M.
Kamp, M.
Höfling, S.
Misiewicz, J.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1398579.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.47.D-
78.30.Fs
78.47.jg
78.55.Cr
78.67.De
Opis:
Room temperature carrier kinetics has been investigated in the type-II W-design $AlSb//InAs//Ga_{0.80}In_{0.20}As_{0.15}Sb_{0.85}//InAs//AlSb$ quantum well emitting in the mid-infrared spectral range (at 2.54 μ m). A time-resolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2.3±0.2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240±10 ps time constant.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1224-1228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mesoscopic Structures for Microwave-THz Detection
Autorzy:
Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:
https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Intersubband Scattering on the Magnetic Field Dependence of the Conductivity Tensor
Autorzy:
Siwiec-Matuszyk, J.
Baj, M.
Babiński, A.
Kasprzak, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046999.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
73.50.Jt
73.21.Fg
73.61.Ey
Opis:
In this paper we show that intersubband scattering can lead to apparent inconsistency of the experimental results obtained by means of classical and quantum transport measurements and this discrepancy is entirely connected with the usage of classical formulae to describe magnetic field dependence of a conductivity tensor. We prove that there is no contradiction in our observations and that the models describing quantum oscillations and magnetic-field dependence of the conductivity tensor, which are present in the literature, complement each other.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 337-344
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crystal Orientation Dependence of the Fundamental Optical Transition in type-II W-Design Quantum Well Structures
Autorzy:
Ryczko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1376073.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
71.55.Eq
Opis:
Using a multiband k·p theory the band structure properties of type-II W-design AlSb/InAs/GaInSb/InAs/AlSb quantum wells on GaSb substrates of various crystallographic orientations have been investigated. Such structures are predicted for the emission in a broad range of mid infrared from below 3 μm to beyond 10 μm. The energy of the fundamental optical transition and the corresponding oscillator strength have been determined in function of the layer structure details and versus the substrate orientation. In addition, the resulting optical anisotropy in such type-II quantum wells has been derived.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1149-1153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Quantum Cascade Lasers in Strong Magnetic Field
Autorzy:
Radovanović, J.
Milanović, V.
Indjin, D.
Ikonić, Z.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1505456.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We have developed a comprehensive rate equations based model for calculating the optical gain in the active region of a quantum cascade laser in magnetic field perpendicular to the structure layers, which takes into account all the relevant scattering channels. The model is applied to gain-optimized quantum cascade laser active region, obtained by a systematic optimization procedure based on the use of genetic algorithm, which we have previously set up for designing novel structures and improving performance of existing ones. It has proven to be very efficient in generating optimal structures which emit radiation at specified wavelengths corresponding to absorption fingerprints of particular harmful pollutants found in the atmosphere. We also illustrate another interesting prospective application of quantum cascade laser-type structures: the design of metamaterials with tunable complex permittivity, based on amplification via intersubband transitions. In this case, the role of the magnetic field is to assist the attainment of sufficient optical gain (population inversion), necessary to effectively manipulate the permittivity and fulfill the conditions for negative refraction (left-handedness).
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 99-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Landau Level Scattering Processes in Magnetic Field Assisted THz Quantum Cascade Laser
Autorzy:
Radovanović, J.
Daničić, A.
Milanović, V.
Indjin, D.
Ikonic, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1503186.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
Opis:
We present a detailed analysis of GaAs/AlGaAs terahertz quantum cascade laser in the presence of an intense external magnetic field. One of the objectives in further development of THz quantum cascade laser is the realization of structures operating at higher temperatures. This is difficult to obtain as the operating photon emission energy is smaller than the longitudinal-optical phonon energy in the semiconductor material. With increased temperature, electrons in the upper radiative state gain sufficient in-plane energy to emit an longitudinal-optical phonon, which represents a non-radiative scattering and reduces the optical gain. By applying strong magnetic field, two-dimensional continuous energy subbands become split into series of discrete Landau levels, and at particular values of B it is possible to quench these non-radiative channels. Numerical simulations are performed on two-well design quantum cascade laser operating at 4.6 THz, implemented in GaAs/$Al_{0.15}Ga_{0.85}As$, and the magnetic field is perpendicular to the epitaxial layers. Strong oscillations of carrier lifetimes for the upper state of the laser transition, as a function of magnetic field are observed, which can be attributed to interface roughness scattering and longitudinal-optical phonon scattering between Landau levels.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 227-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:
Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:
https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:
The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Autorzy:
Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813388.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
73.21.Fg
73.40.Kp
Opis:
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Exciton-Longitudinal Optical Phonon Interaction οn Exciton Binding Energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ Quantum Wells
Autorzy:
Onodera, C.
Yoshida, M.
Powiązania:
https://bibliotekanauki.pl/articles/1535752.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.20.Bh
81.05.Dz
Opis:
We study the effects of exciton-longitudinal optical phonon interaction on the exciton binding energies in ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells. The heavy- and light-hole exciton binding energies increase to the exciton-logitudinal optical phonon interaction. The increase in the maximum heavy-hole (light-hole) exciton binding energy for x=0.74 is 68.3 meV (55.0 meV). In narrow ZnS/$Mg_{x}Be_{y}Zn_{1-x-y}S$ single quantum wells SQWs, the heavy- and light-hole exciton binding energies exceed the longitudinal optical phonon energy of ZnS when x ≥ 0.1.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 643-647
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 48

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