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Tytuł:
Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals as a New Thermoelectric Material
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Domuchowski, W.
Dybko, K.
Witkowska, B.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/2044514.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Pa
72.80.Jc
Opis:
We studied experimentally thermoelectric properties of p-type bulk crystals of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te and Pb$\text{}_{1-x-y}$Ag$\text{}_{y}$Mn$\text{}_{x}$Te (0≤ x≤ 0.083 and y≤0.017) at room and liquid nitrogen temperatures. Model calculations of the thermoelectric figure of merit parameter (Z) involved the analysis of carrier concentration, carrier mobility, density of states as well as electronic and lattice contributions to the thermal conductivity of PbMnTe. In the analysis we took into account the main effect of Mn concentration on the band structure parameters of PbMnTe, i.e. the increase of the energy gap. The analysis of electrical, thermoelectric, and thermal properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te crystals showed that, at room temperature, the maximum values of the parameter Z occur in crystals with Mn content 0.05≤ x≤0.07 and are comparable with a maximal value of Z observed in PbTe. At T=400 K the increase in the parameter Z by 10% is expected in Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te crystal (as compared to PbTe) for a very high concentration of holes of about p=5×10$\text{}^{19}$ cm$\text{}^{-3}$. The experimental data correctly reproduce the theoretical Z(p) dependence.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 809-816
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substrate-Induced Strain in Epitaxial Lead Chalcogenides by Galvanomagnetic Effect Rotational Dependence
Autorzy:
Berchenko, N. N.
Dobriansky, O. A.
Korovin, A. V.
Nikiforov, A. Yu.
Yakovyna, V. S.
Zogg, H.
Powiązania:
https://bibliotekanauki.pl/articles/1968034.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
72.20.My
Opis:
On the example of the PbTe and Pb$\text{}_{0.77}$Sn$\text{}_{0.23}$Te on BaF$\text{}_{2}$ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch-thermally induced strains in semiconductors with multivalley band structure is discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 715-718
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Polarization of Onsager Fluids. II. Birefringence. 1. Kerr Constants of Pure Substances
Autorzy:
Prezhdo, V. V.
Tarasova, G. V
Prezhdo, O. V.
Tyurin, S. A.
Akulova, O. N.
Kurskaya, T. N
Powiązania:
https://bibliotekanauki.pl/articles/1931288.pdf
Data publikacji:
1994-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Fm
72.80.Jc
Opis:
The Kerr constants of pure liquid organic compounds, which exhibit weak intermolecular interactions and possess widely varying electric, optical and polarizational molecular parameters, were computed from the data on dielectrometry and electric birefringence. Good agreement of the calculated and observed values was reached as the result of the introduction of the local field model, which develops the concepts of reactive field and local electric induction of a polarized fluid, into the orientational theory of the Kerr effect.
Źródło:
Acta Physica Polonica A; 1994, 85, 5; 797-804
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in TlInS$\text{}_{2}$ Layered Crystals by Thermally Stimulated Current Measurements
Autorzy:
Yuksek, N. S.
Gasanly, N. M.
Ozkan, H.
Karci, O.
Powiązania:
https://bibliotekanauki.pl/articles/2038188.pdf
Data publikacji:
2004-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Jc
Opis:
Thermally stimulated current measure ments are carried out on TlInS$\text{}_{2}$ layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS$\text{}_{2}$ crystal in the low-temperature region.
Źródło:
Acta Physica Polonica A; 2004, 106, 1; 95-103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Electron Transport in PbTe:Cr due to Presence of Resonant Impurity State
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Kossut, J.
Story, T.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1929686.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.10.Fk
72.80.Jc
Opis:
The results of transport investigation of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.009) in temperature range 3.5-300 K are presented. The obtained electron concentration and electron mobility vs. temperature and Cr concentration data are interpreted and discussed within the model assuming that Cr in PbTe forms a donor state resonant with the conduction band.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 599-603
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Trap Levels and Defect Inhomogeneities on Carrier Transport in SiC Crystals and Radiation Detectors
Autorzy:
Kažukauskas, V.
Kalendra, V.
Vaitkus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1178810.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.80.Jc
85.30.De
Opis:
We present investigation of carrier transport and trapping in 4H-SiC single crystals and high-energy radiation detectors. SiC detectors were produced from bulk vanadium-compensated semi-insulating single crystal 4H-SiC and provided with nickel ohmic and titanium Schottky contacts. The prevailing defect levels were revealed by means of thermally stimulated current and thermally stimulated depolarization methods and their advanced modification - multiple heating technique. From I-V measurements a Schottky barrier height of≈1.9 eV was found. In 4H-SiC:Va the following thermal activation values were deduced: 0.18-0.19 eV, 0.20-0.22 eV, 0.3-0.32 eV, 0.33 -0.41 eV, and 0.63 eV. The maximum with activation energy of 0.33-0.41 eV appears below 125 K and most probably is caused by thermal carrier generation from defect levels. In contrast, the first three maxima with lowest activation energies, which appear at higher temperatures, are likely associated with material inhomogeneities causing potential fluctuations of the band gap. The existence of different polarization sources in different temperature ranges is also demonstrated by thermally stimulated depolarization.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 333-339
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Traps Distribution in $TlInS_2$ Layered Crystals
Autorzy:
Isik, M.
Gasanly, N.
Ozkan, H.
Powiązania:
https://bibliotekanauki.pl/articles/1808125.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
The trap centers and distributions in $TlInS_2$ were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × $10^{-16}$, 2.7× $10^{-12}$, and 1.8× $10^{-11} cm^{2}$, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 732-737
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
Autorzy:
Yildirim, T.
Gasanly, N.
Turan, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400156.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 766-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermally Stimulated Current Study of Shallow Traps in As-Grown $TlInSe_2$ Chain Crystals
Autorzy:
Gasanly, N.
Yildirim, T.
Powiązania:
https://bibliotekanauki.pl/articles/1505407.pdf
Data publikacji:
2011-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
Thermally stimulated current measurements were carried out on as-grown $TlInSe_2$ single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K $s^{-1}$. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × $10^{13}$ and 3.4 × $10^{12} cm^{-3}$) and capture cross section (4.1 × $10^{-28}$ and 2.9 × $10^{-26} cm^2$) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
Źródło:
Acta Physica Polonica A; 2011, 119, 3; 437-441
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of the Electro-Optical Kerr Effect in Physical-Chemical Analysis of Binary Systems
Autorzy:
Prezhdo, O. V.
Tyurin, S. A.
Pisarczyk, M.
Odziemek, A.
Prezhdo, V. V.
Powiązania:
https://bibliotekanauki.pl/articles/2030490.pdf
Data publikacji:
2002-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.70.Dk
78.20.Fm
72.80.Jc
Opis:
Applications of the electro-optical Kerr effect in physical-chemical analysis of binary mixtures are reviewed. Improvements in the experimental techniques, in particular, development of the pulsed and alternating electric field based approaches, have led to significant advances in this area. However, problems associated with the description of the internal field of liquids remain and hamper broader applications of the techniques. It is shown that a further progress in the electro-optical Kerr effect characterization of chemical systems relies on the development of a more general theory of optical properties of condensed phase chemical mixtures that can account for nonlinear effects, such as hyperpolarizability, dispersion and specific conditions of the Kerr constant measurements.
Źródło:
Acta Physica Polonica A; 2002, 101, 4; 477-494
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mictomagnetic Order in Cd$\text{}_{0.87}$Cr$\text{}_{1.93}$V$\text{}_{0.06}$Se$\text{}_{4}$ Semiconductor
Autorzy:
Groń, T.
Malicka, E.
Zawisza, B.
Duda, H.
Krok-Kowalski, J.
Pacyna, A. W.
Powiązania:
https://bibliotekanauki.pl/articles/2048136.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
75.50.Pp
75.50.Dd
Opis:
The complex ac dynamic magnetic susceptibility was used to study the mictomagnetic-like behavior in polycrystalline Cd$\text{}_{0.87}$Cr$\text{}_{1.93}$V$\text{}_{0.06}$Se$\text{}_{4}$ spinel. The temperature dependences of the zero field in-phase (real part) and out-of-phase (imaginary part) components of fundamental susceptibility measured at the oscillating field H$\text{}_{ac}$ = 0.5 Oe and at the constant frequency of 125 Hz are characteristic for the mictomagnetic order. These results well correlate with the anomalies in the second and third harmonics of the ac susceptibility indicating the cluster glass.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 714-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hopkinson-Like Effect in Single-Crystalline $CdCr_2Se_4$ and $Cd[Cr_{1.89}Ti_{0.08}]Se_4$
Autorzy:
Malicka, E.
Groń, T.
Pacyna, A.
Duda, H.
Krok-Kowalski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1489913.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
75.50.Pp
75.50.Dd
Opis:
The static (dc) and dynamic (ac) magnetic measurements of $CdCr_2Se_4$ and $Cd[Cr_{1.89}Ti_{0.08}]Se_4$ showed their ferromagnetic properties with a Curie temperature $T_{C}$ ≈ 130 K and revealed on the real component of ac susceptibility curve, the peaks near $T_{C}$ at 200 Oe, 450 Oe and 1 kOe, characteristic for the Hopkinson ones. The meaningful reduction of saturation moment to 4.73 $μ_{B}$/f.u. for $Cd[Cr_{1.89}Ti_{0.08}]Se_4$ suggests the diamagnetic configuration of Ti ions, which dilutes the ferromagnetic sublattice of Cr ones and causes reducing of the energy losses visible on the imaginary components of ac susceptibility curve. Close for zero values of higher susceptibility harmonics above $T_{C}$ are pointing out to the lack of the spin fluctuations in the paramagnetic state.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 690-693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Magnetic Characterization οf $ZnCr_{2-x}V_{x}Se_{4}$ Spinel Semiconductors
Autorzy:
Duda, H.
Malicka, E.
Groń, T.
Pacyna, A.
Kusz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791367.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
75.50.Pp
75.50.Dd
Opis:
Single crystals of $ZnCr_{2}Se_{4}$ spinel doped with vanadium were prepared by chemical vapour transport. The chemical compositions of three crystals have been determined by X-ray diffraction. The structure refinement using the SHELXL-93 program system determine the cation distribution in the system as $ZnCr_{2-x}V_{x}Se_{4}$. For x values equal to 0.03, 0.1 and 0.13 the observed symmetry was cubic, space group Fd3m. Based on the structural data, influence of the V ions on the magnetic and electrical properties has been analyzed.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 962-963
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Magnetic Studies of the $Cd_{x}Cr_{y}V_{z}Se_{4}$ Spinels
Autorzy:
Groń, T.
Duda, H.
Malicka, E.
Zawisza, B.
Krok-Kowalski, J.
Pacyna, A.
Powiązania:
https://bibliotekanauki.pl/articles/1791407.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
75.50.Pp
75.50.Dd
Opis:
The electrical and magnetic investigations carried out on the polycrystalline spinels with the general chemical formula $Cd_{x}Cr_{y}V_{z}Se_{4}$ (where z = 0.06, 0.12, 0.24, and 0.31) revealed semiconducting and ferromagnetic properties with a Curie temperature of 127.5 K. A step-like structure of the electrical conductivity, σ(T), was observed for the polycrystal containing 6% V ions in the octahedral sites while the remaining samples showed a typical Arrhenius behaviour of σ(T). These effects are interpreted in terms of ferromagnetic spin clusters which finally dissolve on going towards the paramagnetic limit including non-stoichiometry.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 969-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Polarization of Onsager Fluids. II. Birefringence. 2. Molar Kerr Constants of Binary Solutions
Autorzy:
Prezhdo, V. V.
Tarasova, G. V.
Prezhdo, O. V.
Tyurin, S. A.
Akulova, O. N.
Kurskaya, T. N.
Powiązania:
https://bibliotekanauki.pl/articles/1931555.pdf
Data publikacji:
1994-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Fm
72.80.Jc
31.70.Dk
Opis:
On the ground of dielectrometry and electric birefringence data we calculated molar Kerr constants of substances dissolved in organic media of diverse polarity and polarizability under the conditions of infinite dilution. Minimal errors of the calculated constants, in relation to their gaseous phase values, were achieved as a result of the introduction of the local field model, which evolves the concepts of reactive field and local electric induction of a polarized fluid, into the orientational theory of Kerr effect.
Źródło:
Acta Physica Polonica A; 1994, 86, 3; 327-332
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Polarization of Onsager Fluids. II. Birefringence. 3. Role of Universal Pairwise Interactions
Autorzy:
Prezhdo, V. V.
Tarasova, G. V.
Prezhdo, O. V.
Tyurin, S. A.
Akulova, O. N.
Ivanov, N. I.
Powiązania:
https://bibliotekanauki.pl/articles/1943971.pdf
Data publikacji:
1996-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.70.Dk
78.20.Fm
72.80.Jc
Opis:
A comparative analysis of several methods of interpretation of solvent influence on molar Kerr constants of solutes was done. The analysis was based on experimentally determined electro-optical and dielectric properties of binary solutions of organic substances with various polarities, polarizabilities and optical anisotropies. It was found that the role of universal van-der-Waals interactions treated via London-Debye-Keesom potentials was best accounted for by a modified orientational theory of Kerr effect that developed the ansatz of reactive field and local dielectric permittivity. An extrapolation method of determination of gas phase molar Kerr constants of solutes was deduced from the theory.
Źródło:
Acta Physica Polonica A; 1996, 89, 1; 47-59
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferromagnetic Order in Single-Crystalline (Cd$\text{}_{x}$Al$\text{}_{y}$)[Cr$\text{}_{2}$]Se$\text{}_{z}$ Semiconductors
Autorzy:
Duda, H.
Rduch, P.
Malicka, E.
Groń, T.
Kusz, J.
Powiązania:
https://bibliotekanauki.pl/articles/2048125.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
75.50.Pp
75.50.Dd
Opis:
Measurements of the magnetic properties, the electrical conductivity and the Seebeck effect were performed on single crystals (Cd$\text{}_{x}$Al$\text{}_{y}$)[Cr$\text{}_{2}$]Se$\text{}_{z}$ between 77 and 300 K. All samples have a ferromagnetic order with the Curie temperature of 130 K and the paramagnetic Curie-Weiss temperature of 155 K. Both these temperatures do not depend significantly on the Al substitution. The electrical conductivity of single crystals CdCr$\text{}_{2}$Se$\text{}_{4}$ doped with Al was p-type and showed the change of log σ versus 1/T slope above 150 K. This fact is interpreted as being due to the onset of impurity conduction and structural defects.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 702-704
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ballistic Transport Phenomena in Nanostructures of Paraelectric Lead Telluride
Autorzy:
Grabecki, G.
Powiązania:
https://bibliotekanauki.pl/articles/2047366.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Jc
73.21.Hb
73.23.Ad
77.22.Ch
Opis:
This is a review of our recent developments in the physics of lead telluride nanostructures. PbTe is a IV-VI narrow gap paraelectric semiconductor, characterized by the huge static dielectric constant ε >1000 at helium temperatures. We nanostructurized this material by means of e-beam lithography and wet chemical etching of modulation doped PbTe/Pb$\text{}_{1-x}$Eu$\text{}_{x}$Te quantum wells. Magnetoresistance measurements performed on the nano-structures revealed a number of magnetosize effects, confirming a ballistic motion of the carriers. The most important observation is that the conductance of narrow constrictions shows a precise zero-field quantization in 2e$\text{}^{2}$/h units, despite a significant amount of charged defects in the vicinity of the conducting channel. This unusual result is a consequence of a strong suppression of the Coulomb potential fluctuations in PbTe, an effect confirmed by numerical simulations. Furthermore, the orbital degeneracy of electron waveguide modes can be controlled by the width of PbTe/Pb$\text{}_{1-x}$Eu$\text{}_{x}$Te quantum wells, so that unusual sequences of plateau conductance can be observed. Finally, conductance measurements in a nonlinear regime allowed for an estimation of the energy spacing between the one-dimensional subbands.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 127-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long-Lasting Current Transient Phenomena in TlBr
Autorzy:
Kažukauskas, V.
Ziminskij, A.
Vainorius, N.
Gostilo, V.
Shorohov, M.
Bozhko, V.
Powiązania:
https://bibliotekanauki.pl/articles/1506282.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.40.+w
72.60.+g
72.80.Jc
Opis:
The persistent conductivity effects in TlBr were evidenced at the temperatures below about 200 K after the intrinsic light excitation. They were associated with the filling of the trapping states having thermal activation energy of about 0.08-0.12 eV and accompanied by the appearance of the pronounced maximum of the thermally stimulated currents. In this state the enhanced photoconductivity was observed that could be thermally quenched above about 180 K. The quenching is initiated by the emptying of the trapping states having activation energy of 0.63-0.65 eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 268-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Autorzy:
Grodzicki, M.
Wasielewski, R.
Surma, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807513.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Cf
81.15.Gh
72.80.Jc
79.60.Dp
68.37.Ps
Opis:
The surface of 6H-SiC(0001) samples was subjected to etching under $H_{2}$/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-82-S-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Power UV and VUV Excilamps and Their Applications
Autorzy:
Tarasenko, V.
Avdeev, S.
Erofeev, M.
Lomaev, M.
Sosnin, E.
Skakun, V.
Shitz, D.
Powiązania:
https://bibliotekanauki.pl/articles/1791243.pdf
Data publikacji:
2009-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.80.Tn
42.72.Bj
32.30.Jc
Opis:
In the present paper, the review of the basic results obtained at the Laboratory of Optical Radiation at High Current Electronics Institute SB RAS during 2007-2009 years is presented. Efficient radiation of $Ar_{2}$, $Kr_{2}$, $Xe_{2}$, $KrBr^\ast$, $KrCl^\ast$, $XeI^\ast$, $XeBr^\ast$, $XeCl^\ast$, $Cl_{2}^\ast$ molecules and I atoms was obtained in rare gas or in rare gas-$Br_{2}$ ($Cl_{2}$, $I_{2}$) mixtures. Study of radiation parameters and lifetime period of the manufactured barrier discharge excilamps has been performed.
Źródło:
Acta Physica Polonica A; 2009, 116, 4; 576-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films
Autorzy:
Kaczmarski, J.
Borysiewicz, M.
Pągowska, K.
Kamińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1398691.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Gc
81.15.Cd
72.80.Ng
73.61.Jc
Opis:
Zn-O-N thin films fabricated by reactive radio frequency magnetron sputtering have been investigated for their compositional, structural, transport and optical properties. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous films with the Hall mobility within the range from 15 to 80 cm²/(V s). In addition, it has been observed that the Hall mobility increases for Zn-O-N. Since it has a narrower bandgap than ZnO, it is put forward that the high mobility is due to the valence band maximum in this material lying above the trap states in the gap commonly observable in ZnO. These traps originate from oxygen vacancies and are localized at the bottom of the band gap influencing the carrier mobility.
Źródło:
Acta Physica Polonica A; 2016, 129, 1; 150-152
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
Autorzy:
Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399114.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc
Opis:
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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