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Wyświetlanie 1-15 z 21
Tytuł:
Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors
Autorzy:
Yurtsenyuk, N.
Kosyachenko, L.
Sklyarchuk, V.
Maslyanchuk, O.
Sklyarchuk, O.
Grushko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492970.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ey
78.20.Ci
Opis:
The electrical properties of single $Cd_{1 - x}Mn_{x}Te$ (x= 0.07 - 0.39) crystals with a resistivity of ≈ $10^8$ Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 957-959
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental and Theoretical Analysis οf PbTe-CdTe Solid Solution Grown by Physical Vapour Transport Method
Autorzy:
Szot, M.
Szczerbakow, A.
Dybko, K.
Kowalczyk, L.
Smajek, E.
Domukhovski, V.
Łusakowska, E.
Dziawa, P.
Mycielski, A.
Story, T.
Bukała, M.
Galicka, M.
Sankowski, P.
Buczko, R.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791366.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
61.50.Ah
71.20.Nr
78.60.Lc
72.20.Fr
Opis:
Bulk monocrystals of $Pb_{1-x}Cd_{x}Te$, with the Cd content x up to 0.11, were grown by physical vapour transport method. The structural, electrical and optical properties of these ternary crystals were studied experimentally and theoretically. All investigated samples exhibit rock-salt structure and high crystal quality, which was confirmed by X-ray rocking curve width parameter of about 100 arcsec. The decrease of the lattice parameter with increasing Cd content x was found experimentally, in agreement with ab initio calculations. The band structures of $Pb_{1-x}Cd_{x}Te$ mixed crystals for x values up to 0.2 were calculated using tight binding approach. The calculated band gap in the L-point increases with the Cd content in qualitative agreement with photoluminescence measurements in the infrared. For all studied $Pb_{1-x}Cd_{x}Te$ samples, the Hall effect and electrical conductivity measurements, performed in the temperature range from 4 to 300 K, revealed p-type conductivity.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 959-961
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance of a Quantum Wire with Finite Length
Autorzy:
Suhrke, M.
Wilke, S.
Keiper, R.
Powiązania:
https://bibliotekanauki.pl/articles/1879929.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.20.Fr
72.10.Bg
Opis:
The conductance of a ballistic quantum wire between two reservoirs exhibits steps of height 2e$\text{}^{2}$/h, if the occupation of transverse subbands is changed. We investigate conditions for observation of these steps starting from Kubo-Greenwood formula. We show how the conductance steps are influenced by the properties of the external regions as well as by the nature of the connection between these regions and the wire. Furthermore we incorporate residual scattering in long wires.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coulomb versus Madelung Gap: Ordering in a System of Point Charges
Autorzy:
Sobkowicz, P.
Wilamowski, Z.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929618.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Fr
Opis:
Spatial correlations of impurity charges in a mixed valence regime are studied with the use of Monte Carlo simulations. The influence of various kinds of disorder on the one-particle density of states is determined. A continuous transitions from a "soft" Coulomb gap (density of states vanishing only at the chemical potential) to a "hard" gap (with a finite range of energies with vanishing density of states) is found, driven by decreasing amount of built-in disorder in the system. The "hard" Coulomb gap resembles the Madelung gap, found in crystalline arrangements of charges. The similarity reflects the fact that both the Coulomb and Madelung gaps are manifestations of the same phenomenon, resulting from ordering of the positions of point charges, the only difference being the range of correlations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 515-518
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Scattering and the Band Structure of Mixed Crystals Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se
Autorzy:
Skierbiszewski, C.
Wilamowski, Z.
Suski, T.
Kossut, J.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1923803.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
In this paper the dependence of the band structure and the electron scattering mechanisms on the molar fraction x are studied in Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se. The crossover from the zero-gap band to the open band-gap configuration at x ≈ 0.08 is predicted. We explain the drop of the electron mobility for x > 0.002 by the alloy scattering mechanism.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 809-812
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evidence for Alloy Splitting of Ge Related DX State in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:
Skierbiszewski, C.
Piotrzkowski, R.
Lubke, K.
Powiązania:
https://bibliotekanauki.pl/articles/1992190.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Fr
Opis:
Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C$\text{}_{3v}$ configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 531-533
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metastability of Localized Neutral Donor State In GaAs
Autorzy:
Skierbiszewski, C.
Jantsch, W.
Lübke, K.
Wilamowski, Z.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933994.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
71.55.-i
Opis:
Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 905-908
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Study of Charged Donor Ordering in HgSe Doped with Iron and Gallium
Autorzy:
Skierbiszewski, C.
Suski, T.
Kossut, J.
Wilamowski, Z.
Dobrowolski, W.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891020.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Fk
72.20.Fr
72.80.Jc
Opis:
Transport experiments (Hall effect and conductivity) under hydrostatic pressure up to 1 GPa at liquid helium temperatures on HgSe: Fe, Ga (N$\text{}_{Fe}$ = 2 x 10$\text{}^{19}$ cm$\text{}^{-3}$; 0 ≤ N$\text{}_{Ga}$ ≤ 10$\text{}^{19}$ cm$\text{}^{-3}$) were performed. The results show that the gallium co-doping of HgSe:Fe decreases the degree of spatial correlations between charged impurities. Under the hydrostatic pressure, used as a tool for changing the ratio of the charged to neutral impurities, this effect is even more pronounced. A qualitative agreement between the calculation within the short-range correlation model and our experimental data is achieved.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 401-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Through Graphene Junctions with Rashba Spin-Orbit Coupling
Autorzy:
Rataj, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1386718.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Vp
73.23.Ad
73.40.Lq
75.70.Tj
Opis:
Electronic transport in a graphene junction is considered theoretically. Graphene is assumed to be deposited on a substrate which generates Rashba spin-orbit coupling. However, the Rashba parameters in the two parts of the junction are assumed to be generally different. Additionally, different gate voltages are applied to the two parts, which allow tuning the Fermi level and potential step. We analyze the probabilities of electron transmission through the junction and electrical conductance in the linear response regime.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 481-483
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering
Autorzy:
Pődör, B.
Powiązania:
https://bibliotekanauki.pl/articles/2044528.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.20.Dp
72.80.Ey
Opis:
Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T$\text{}^{-1}\text{}^{/}\text{}^{2}$ like temperature dependence dominated the hole mobility in the investigated temperature range.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 837-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of InGaP Doped with Si
Autorzy:
Litwin-Staszewska, E.
Trzeciakowski, W.
Piotrzkowski, R.
Gonzalez, L.
Powiązania:
https://bibliotekanauki.pl/articles/1991938.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ey
71.55.Eq
Opis:
We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(E$\text{}_{F}$). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 431-435
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$Zn_{1-x}(Mn,Co)_xGeAs_2$ Ferromagnetic Semiconductor: Magnetic and Transport Properties
Autorzy:
Kilanski, L.
Gorska, M.
Domukhovski, V.
Dobrowolski, W.
Anderson, J.
Rotundu, C.
Varniavskii, S.
Marenkin, S.
Powiązania:
https://bibliotekanauki.pl/articles/1811937.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.50.Pp
75.40.Cx
Opis:
We present the studies of magnetic and transport properties of the bulk $Zn_{1-x}(Mn, Co)_xGeAs_2$ mixed crystals with 0.052 ≤ x ≤0.182 grown using direct fusion method. Magnetic investigations showed that for samples with x ≥ 0.078 we observed a behavior typical of ferromagnets, with the Curie temperatures $T_C$ ≥ 300 K. The observed ferromagnetism was probably connected with the spinodal decomposition of the Mn ions in the alloy. The transport studies including resistivity and Hall effect (at B=1.4 T) were performed. The samples showed p-type conductivity with semiconducting or metallic character, depending on the alloy composition. The Hall carrier concentration, p ≥ $10^{18} cm^{-3}$, was composition dependent.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1151-1157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AC Magnetic Susceptibility Studies of $Ge_{1-x-y}Sn_{x}Mn_{y}Te$ Mixed Crystals
Autorzy:
Kilanski, L.
Arciszewska, M.
Domukhovski, V.
Dobrowolski, W.
Slynko, V.
Slynko, I.
Powiązania:
https://bibliotekanauki.pl/articles/1811934.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.80.Ga
75.40.Gb
75.50.Lk
75.50.Pp
Opis:
We present preliminary studies of magnetic and transport properties of $Ge_{1-x-y}Sn_xMn_yTe$ mixed crystals with 0.091 ≤ x ≤ 0.105 and 0.012 ≤ y ≤ 0.115. Qualitative analysis of our experimental results showed the appearance of a spin-glass phase at T < 50 K. The transport characterization (resistivity and Hall effect measurements) showed that the investigated samples had semimetallic p-type conductivity with relatively large carrier concentrations (p > $10^{21} cm^{-3}$) and low mobilities (μ < 100 $cm^2 V^{-1} s^{-1}$). The dependence of transport properties on the chemical composition of the samples was observed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1145-1150
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Irradiation by High-Energy Protons on GaN Detectors
Autorzy:
Kažukauskas, V.
Kalendra, V.
Vaitkus, J.
Jasiulionis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813395.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.20.Fr
72.80.Ey
78.70.-g
85.30.De
Opis:
We had investigated effects of the irradiation by 24 GeV protons with doses ranging from $1×10^{14}$ up to $1×10^{16} p//cm^2$ on the properties of GaN ionising radiation detectors. In theγ-spectra of the samples radiation of $\text{}^7Be,$ $\text{}^{22}Na,$ and other long-lived radionuclides with A <70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1013-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Carrier Transport in GaN Single Crystals and Radiation Detectors by Thermally Stimulated Methods
Autorzy:
Kažukauskas, V.
Kalendra, V.
Vaitkus, J.-V.
Powiązania:
https://bibliotekanauki.pl/articles/2041765.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.20.Fr
72.80.Ey
78.70.-g
85.30.De
Opis:
We investigated single crystals of GaN and thin film GaN radiation detectors by thermally stimulated currents and thermally stimulated depolarization methods in order to characterize carrier transport properties as influenced by material defect structure. In thick GaN no expressed structure of the thermally stimulated current spectra was observed in the temperature range from 100 K up to 350 K, which could be characteristic of the thermal carrier generation from trap levels. The experimental facts imply that the thermally stimulated current spectra might be caused not by carrier generation, but it could be due to thermal mobility changes. Therefore we had applied the numerical analysis by taking into account carrier scattering by ionized impurities and phonons. It was found that mobility limited by ionized impurities varies as T$\text{}^{2.8}$ and lattice scattering causes the dependence T$\text{}^{-3.5}$. The highest mobility values were up to 1550 cm$\text{}^{2}$/(V s) at 148-153 K. Such high values indicate relatively good quality of the single GaN thick crystals. In high resistivity GaN detectors irradiated by high doses of high-energy neutrons and X-rays current instabilities were observed which could be caused by the change of carrier drift paths in a highly disordered matter. A model of carrier percolation transport is presented.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 340-345
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

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