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    Wyświetlanie 1-15 z 15
    Tytuł:
    Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides
    Autorzy:
    Piccinini, E.
    Buscemi, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505465.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ee
    72.20.Ht
    72.80.Ng
    Opis:
    The I(V) characteristics of amorphous chalcogenides usually show a negative differential conductance region, which makes the material switch from a high-resistive to a high-conductive state. This feature is of the utmost importance for adopting these materials in the manufacturing of solid-state memory devices. We propose here two complementary models for the interpretation of the switching mechanism, both stemming from and updating the literature analysis. The former is based on macroscopic equations that can be solved analytically; the latter is a current-driven three-dimensional Monte Carlo simulation of the device. A critical analysis of the two models is also performed in order to identify the fundamental conditions accounting for the voltage snap-back of the I(V) curve.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 121-124
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Mn-Related Defect Band in InP
    Autorzy:
    Macieja, B.
    Korona, K. P.
    Piersa, M.
    Witowski, A. M.
    Wasik, D.
    Wysmołek, A.
    Strzelecka, G.
    Hruban, A.
    Surma, B.
    Palczewska, M.
    Kamińska, M.
    Twardowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036033.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ee
    72.20.Jv
    Opis:
    Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn$\text{}^{2+}$(d$\text{}^{5}$) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d$\text{}^{5}$ or d$\text{}^{5}$ plus a hole localized about 7Å around corresponding Mn core.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 637-642
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Resistivity of CrN Thin Films
    Autorzy:
    Batko, I.
    Batkova, M.
    Lofaj, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372678.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ga
    72.20.Ee
    78.30.Hv
    Opis:
    The work is focused on the measurements of electrical resistivity of CrN thin films deposited on glass substrates by DC-magnetron sputtering in Ar+$N_{2}$ atmosphere. The studied samples reveal semiconducting behaviour of electrical resistivity in the whole range of tested preparation parameters (such as pressure and composition of Ar-$N_{2}$ mixture), whereas the electrical transport regime is strongly influenced by parameters of preparation. Numerical analysis of the experimental data showed that electrical transport can be adequately described in terms of variable-range hopping conduction in selected temperature intervals. Moreover, S-shaped anomaly in ρ(T) dependence, being expected to be a consequence of phase transition to a low-temperature antiferromagnetic orthorhombic phase, has been observed for sample with the highest concentration of $N_{2}$ in the temperature interval of 220-250 K. The obtained results indicate that technology processes typically used for preparation of CrN coatings represent a promising potential to develop also high sensitivity cryogenic sensors for high magnetic fields applications.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 415-416
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low-Temperature DC Carrier Transport in $(Co_{0.45}Fe_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Nanocomposites Sputtered in Mixed Argon-Oxygen Atmosphere
    Autorzy:
    Svito, I.
    Fedotov, A.
    Saad, A.
    Koltunowicz, T.
    Zukowski, P.
    Bury, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366313.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    72.20.Ee
    64.60.ah
    Opis:
    This paper studies the temperature dependences (2 < T < 300 K) of the DC conductivity σ(T) for the $(Co_{0.45}Fe_{0.45}Zr_{0.10})_x(Al_2O_3)_{1-x}$ nanocomposites (30 < x < 65 at.%) sputtered in Ar + $O_2$ atmosphere. It is shown that at temperatures lower than 100-150 K dependences of DC conductance on temperature for all the studied samples are due to the Shklovski-Efros variable range hopping mechanism. It was also observed that σ(x,T) dependences can be attributed to the formation of FeCo-based oxide "shells" around metallic alloy nanoparticles due to incorporation of oxygen in the vacuum chamber during the deposition procedure.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1351-1354
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Electrical Properties of Some Composite Materials Based on Sodium and Tantalum Oxides
    Autorzy:
    Malaescu, D.
    Grozescu, I.
    Sfirloaga, P.
    Vlazan, P.
    Marin, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398686.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.20.Ev
    81.20.Fw
    72.20.Ee
    72.80.Tm
    Opis:
    Two samples of Na-Ta oxides were synthesized by the hydrothermal method at reaction temperatures of 160°C (sample A) and 200°C (sample B). For reference, a third sample of pure NaTaO₃ was prepared by the sol-gel method (sample C). Using X-ray diffraction, scanning electron microscopy, UV-vis diffuse reflectance spectra and electric measurements, structural, morphologic, spectroscopic and electric properties of samples were investigated. The structural characterization by X-ray diffraction revealed that samples A and B are mixtures of Na-Ta oxides (including NaTaO₃ and other compounds), whilst sample C is pure NaTaO₃. UV-vis diffuse reflectance spectra allowed evaluation of the band gap energy $(E_{g})$, resulting in 3.88 eV for sample A, 3.93 eV for sample B and 4.1 eV for sample C. Electrical resistivity measurements, over the temperature range 300-450 K, showed a typical semiconductor behavior of the investigated samples, with the effective activation energy, $E_{a}$ of 0.47 eV (sample A), 0.45 eV (sample B) and 0.82 eV (sample C). Based on the Mott variable range hopping model, the conductivity mechanism in the investigated samples was analyzed. The results shown that the density of states at the Fermi-level, $N(E_{F})$ is constant in the investigated temperature range and the typical values of $N(E_{F})$ are $0.713 \times 10^{18} eV^{-1} cm^{-3}$ (sample A), $0.621 \times 10^{18} eV^{-1} cm^{-3}$ (sample B) and $0.855 \times 10^{17} eV^{-1} cm^{-3}$ (sample C). Other parameters of VRH model such as the hopping distance R and the hopping energy W have also been computed and the following values at the room temperature were obtained: R=15.7 nm and W=86 meV (for sample A); R=16.3 nm and W=89 meV (for sample B) and R=26.7 nm and W=147 meV (for sample C).
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1; 133-137
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Morphology, Optical and AC Electrical Properties of Copper Phthalocyanine Thin Films
    Autorzy:
    Azim-Araghi, M.
    Haji Mirza Mohamadi, S.
    Bisadi, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1207291.pdf
    Data publikacji:
    2014-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Sx
    73.90.+f
    72.20.Ee
    72.80.Le
    Opis:
    AC electrical properties of sandwich devices composed of thermally evaporated thin films of copper phthalocyanine (CuPc) with aluminum and gold electrodes (Al/CuPc/Au) are investigated over frequency (f) range of $10^2 - 10^5$ Hz and temperature range of 293-453 K. Morphology of the samples was studied via field emission scanning electron microscope images and X-ray diffraction micrographs. The X-ray diffraction micrograph indicates the configuration of α-CuPc with the (510) plane as the preferred orientation. UV-Vis absorption spectrum was analyzed and the optical band-gap energy of CuPc thin film was determined to be 2.81 ± 0.01 eV. Capacitance increased with increasing temperature especially for $f = 10^2$ Hz. Loss factor decreased considerably with increasing frequency to a minimum value at about $f = 10^4$ Hz and increased afterwards. Capacitance is generally independent of frequency for T ≤ 413 K; however it decreases remarkably with increasing frequency for T > 413 K. The conductivity increases quite noticeably with increasing frequency particularly for T ≤ 413 K. The AC electrical characteristics are in good agreement with Goswami and Goswami model. According to our data, at high temperatures, the band theory is applicable in describing the conduction process, whereas hopping mechanism is dominant at low temperatures.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 1; 87-92
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503812.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 39-42
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
    Autorzy:
    Kołtunowicz, T.
    Zhukowski, P.
    Fedotova, V.
    Saad, A.
    Larkin, A.
    Fedotov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503798.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.20.Rf
    73.22.-f
    84.37.+q
    72.20.Ee
    Opis:
    The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 35-38
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Transport Properties of La$\text{}_{0.75-x}$RE$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3}$ (RE = Gd, Dy, Ho; 0≤ x≤0.75) Manganites
    Autorzy:
    Drozd, V.
    Pękała, M.
    Kovac, J.
    Skorvanek, I.
    Szymański, M.
    Nedilko, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041482.pdf
    Data publikacji:
    2004-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Lx
    71.38.-k
    72.20.Ee
    75.50.Dd
    Opis:
    Structure and transport properties have been studied for a series of La$\text{}_{0.75-x}$RE$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3}$ manganites with heavy rare earth ions of Gd, Dy, Ho substituting La with x=0, 0.10, 0.25, 0.50, and 0.75. Polycrystalline samples were prepared by the carbonate precipitation route. The oxygen content was determined by the iodometric titration. The X-ray investigations carried out by the powder method show that the unit cell volume gradually decreases and orthorhombic distortion of the lattice increases with rising RE content. Below the room temperature the electrical resistivity is of the semiconducting type for all the samples studied. Electrical resistivity vs. temperature dependences were analyzed within different models: simple thermal activation, Mott's variable range hopping, adiabatic, nonadiabatic, and bipolaron. The Curie temperatures of Gd, Dy, and Ho substituted manganites determined from magnetization measurements show that at 280 K all the samples are in the paramagnetic phase. The increasing RE fraction reduces magnetization at 4 K as compared to La$\text{}_{0.75}$Ca$\text{}_{0.25}$MnO$\text{}_{3}$.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 5; 751-758
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mn Impurity in Bulk GaAs Crystals
    Autorzy:
    Pawłowski, M.
    Piersa, M.
    Wołoś, A.
    Palczewska, M.
    Strzelecka, G.
    Hruban, A.
    Gosk, J.
    Kamińska, M.
    Twardowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044520.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.20.Ee
    75.50.Pp
    76.30.Fc
    Opis:
    Magnetic and electron transport properties of GaAs:Mn crystals grown by Czochralski method were studied. Electron spin resonance showed the presence of Mn acceptor A in two charge states: singly ionized A$\text{}^{-}$ in the form of Mn$\text{}^{2+}$(d$\text{}^{5}$), and neutral A$\text{}^{0}$ in the form of Mn$\text{}^{2+}$(d$\text{}^{5}$) plus a bound hole (h). It was possible to determine the relative concentration of both types of centers from intensity of the corresponding electron spin resonance lines. Magnetization measured as a function of magnetic field (up to 6 T) in the temperature range of 2-300 K revealed overall paramagnetic behavior of the samples. Effective spin was found to be about 1.5 value, which was consistent with the presence of two types of Mn configurations. In most of the studied samples the dominance of Mn$\text{}^{2+}$(d$\text{}^{5}$)+h configuration was established and it increased after annealing of native donors. The total value of Mn content was obtained from fitting of magnetization curves with the use of parameters obtained from electron spin resonance. In electron transport, two mechanisms of conductivity were observed: valence band transport dominated above 70 K, and hopping conductivity within Mn impurity band at lower temperatures. From the analysis of the hopping conductivity and using the obtained values of the total Mn content, the effective radius of Mn acceptor in GaAs was estimated as a = 11±3Å.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 825-830
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dielectric and Ac Conductivity Studies of Mn-Doped $Na_{1.86}Li_{0.10}K_{0.04}Ti_3O_7$ Ceramics
    Autorzy:
    Singh, R.
    Shripal, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1206481.pdf
    Data publikacji:
    2014-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.10.Bg
    72.20.Ee
    72.60.+g
    77.22.-d
    77.22.Gm
    77.22.Jp
    Opis:
    Dielectric-spectroscopic and ac conductivity studies on 0.01 and 1.0 molar percentage manganese doped layered $Na_{1.86}Li_{0.10}K_{0.04}Ti_3O_7$ ceramics have been reported. The dependence of loss tangent (tan δ) and relative permittivity ($ε_{r}$) on temperature in the range 350-775 K and on frequency in the range 10 kHz-1 MHz have been undertaken. The losses are the characteristics of dipole mechanism, electrical conduction and space charge polarization. The obtained conductivity plots between log($σ_{ac}T$) versus 1000/T have been divided into four regions namely region I, II, III, and IV. The mechanism of conduction in region I is acknowledged to electronic hopping conduction. The less frequency and more temperature dependent region II is ascribed as a mixed mechanism "associated interlayer ionic conduction, electron hopping, and alkali ion hopping conduction". The unassociated interlayer ionic conduction along with alkali ion hopping conduction mechanisms are contributing to the transport process in the mid temperature region III. The mechanism of conduction in the highest temperature region IV may be recognized as the modified interlayer ionic conduction. The conductivity versus frequency curves lead to conclude that the electronic hopping conduction diminishes with the rise of temperature.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 1; 67-72
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
    Autorzy:
    Zhukowski, P.
    Kołtunowicz, T.
    Węgierek, P.
    Fedotova, J.
    Fedotov, A.
    Larkin, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503848.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.22.-f
    81.40.Ef
    84.37.+q
    72.20.Ee
    Opis:
    This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 43-45
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis, Roentgenophase Analysis and Physical Properties of $TlIn_{1-x}Er_xSe_2$ Solid Solutions
    Autorzy:
    Mustafaeva, S.
    Kerimova, E.
    Gasanov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402129.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    71.20.-b
    71.20.Nr
    71.55.-i
    72.15.Eb
    72.15.Rn
    72.20.-i
    72.20.Ee
    72.20.Jv
    72.30.+q
    Opis:
    The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 697-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnon Drag Effect on Resistivity and Thermoelectric Power of Semimetallic Antiferromagnet USb
    Autorzy:
    Henkie, Z.
    Wiśniewski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1943936.pdf
    Data publikacji:
    1995-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Eb
    72.20.Pa
    75.50.Ee
    72.15.Jf
    Opis:
    Resistivity ρ(T) and absolute thermoelectric power S(Τ) have been measured for USb single crystals characterized by different residual resistivity ratios, RRR = ρ(300 K)/ρ(4.2 K). A 50 μV/K peak of S(Τ) observed at 40 K for high RRR crystal vanishes for low RRR one. The ρ ∝ Τ$\text{}^{4}$ dependence observed below 40 K changes to the ρ ∝ Τ $\text{}^{5}\text{}^{/}\text{}^{2}$ one. These variations are ascribed to reduction of the magnon drag effect by an increased incoherent magnetic scattering of carriers, possibly induced by a small change of composition. Resistivity anomaly is analysed above the antiferromagnetic transition temperature T$\text{}_{N}$. We have found that resistivity decreases as tlnt in the range 0.02 ≤ t ≤ 0.35, where t = (Τ - T$\text{}_{N}$)/T$\text{}_{N}$. It is ascribed to a semimetallic character of this compound.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 6; 1103-1112
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance Anisotropy and Magnetic H-T Phase Diagram of $Tm_{0.996}Yb_{0.004}B_{12}$
    Autorzy:
    Sluchanko, N.
    Azarevich, A.
    Bogach, A.
    Glushkov, V.
    Demishev, S.
    Gavrilkin, S.
    Gabani, S.
    Flachbart, K.
    Shitsevalova, N.
    Filipov, V.
    Vanacken, J.
    Moshchalkov, V.
    Stankiewicz, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1371466.pdf
    Data publikacji:
    2014-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Gd
    73.43.Qt
    75.30.Kz
    75.20.Hr
    75.50.Ee
    Opis:
    The antiferromagnetic ground state has been studied by transverse magnetoresistance, heat capacity and magnetization measurements, which were carried out on high quality single crystals of $Tm_{0.996}Yb_{0.004}B_{12}$ dodecaboride in strong magnetic fields at liquid helium temperatures. Both antiferromagnetic-paramagnetic (AF-P) and spin-orientation (AF1-AF2) phase transitions have been observed, and allowed to construct a complicated magnetic H-T phase diagram for this compound. Strong magnetoresistance anisotropy was found both in AF states (ρ(H||[110])/ρ(H||[111])~ 1.2 at H~ 20 kOe) and at the critical field of AF-P transition $(H_{N}[100]$/$H_{N}[111]$~ 1.25) in this magnetic metal with a simple fcc crystal structure.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 1; 332-333
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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