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Wyświetlanie 1-15 z 65
Tytuł:
Vertical Electron Transport in GaN/AlGaN Heterostructures
Autorzy:
Reklaitis, A.
Powiązania:
https://bibliotekanauki.pl/articles/1178371.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
72.20.-i
72.30.+q
Opis:
Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 261-266
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
Autorzy:
Yildirim, T.
Gasanly, N.
Turan, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400156.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 766-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties in 2,6-Diamino Anthraquinone
Autorzy:
Khalil, S. M.
Darwish, S.
Powiązania:
https://bibliotekanauki.pl/articles/1931351.pdf
Data publikacji:
1994-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
Current density-voltage characteristics were obtained from 2,6-diamino anthraquinone samples using ohmic aluminium electrodes. Results showed that at low voltage the conduction process was ohmic, while at high voltage space-charge-limited conduction controlled by a single dominant trap level was presented. Thickness dependence measurements proved that the trapping sites were located at a discrete energy level. The transition voltage, V, between ohmic and space-charge-limited conduction was approximately proportional to the square of the sample thickness and was found to be temperature independent. The temperature dependence of ohmic and space-charge-limited current densities have been investigated. The results were interpreted in terms of extrinsic nature of ohmic conduction. Traps with density ≈ 2 × 10$\text{}^{24}$ m$\text{}^{-3}$ located at 0.50 ± 0.03 eV below the conduction band edge have been observed.
Źródło:
Acta Physica Polonica A; 1994, 85, 6; 953-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermally Stimulated Current Study of Shallow Traps in As-Grown $TlInSe_2$ Chain Crystals
Autorzy:
Gasanly, N.
Yildirim, T.
Powiązania:
https://bibliotekanauki.pl/articles/1505407.pdf
Data publikacji:
2011-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
Thermally stimulated current measurements were carried out on as-grown $TlInSe_2$ single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K $s^{-1}$. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × $10^{13}$ and 3.4 × $10^{12} cm^{-3}$) and capture cross section (4.1 × $10^{-28}$ and 2.9 × $10^{-26} cm^2$) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
Źródło:
Acta Physica Polonica A; 2011, 119, 3; 437-441
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Energy Spectrum of Single-Hole States in Transition Metal Oxides
Autorzy:
Lehmann-Szweykowska, A.
Wojciechowski, R. J.
Gehring, G. A.
Powiązania:
https://bibliotekanauki.pl/articles/2013222.pdf
Data publikacji:
2000-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
72.20.-i
Opis:
The p-d hybridised single-hole states of the transition-metal-oxygen tetrahedron (TMO$\text{}_{4}$) are collectivised due to the direct p-p hopping between oxygens of different clusters. The lowest-lying energy band is always narrow and fully occupied. The first excited band gets occupied as an effect of valence-uncompensated doping, so it can be almost localised. The possible hole excitations to the two higher energy bands, which are wider, may imply the Mott-like hopping form of charge transport in these systems.
Źródło:
Acta Physica Polonica A; 2000, 97, 3; 563-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis, Roentgenophase Analysis and Physical Properties of $TlIn_{1-x}Er_xSe_2$ Solid Solutions
Autorzy:
Mustafaeva, S.
Kerimova, E.
Gasanov, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402129.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Eh
71.20.-b
71.20.Nr
71.55.-i
72.15.Eb
72.15.Rn
72.20.-i
72.20.Ee
72.20.Jv
72.30.+q
Opis:
The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 697-699
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of the Diffused Reflectance and Microstructure for the Phase Transformation of $KNO_{3}$
Autorzy:
Hafez, M.
Yahia, I.
Taha, S.
Powiązania:
https://bibliotekanauki.pl/articles/1398861.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
64.60.-i
61.43.Gt
78.20.-e
72.15.Eb
Opis:
Optical, micro-structural, thermal and electrical properties of the investigated potassium nitrate ($KNO_{3}$) samples were characterized by various techniques such as X-ray analysis, scanning electron microscopy, UV-VIS-NIR absorption and differential scanning calorimetry. The presence of structural phase transition is checked by differential scanning calorimetry, electrical and X-ray analysis measurement. The thermal energy required for such transformation is calculated and found to be 46.2 J/g. The activation energies of the electrical conduction for $KNO_{3}$ were found to be 0.236 eV for phase II and 0.967 eV for phase I. The optical band gaps of $KNO_{3}$ for the higher photon energy are calculated and equal to 5.03 and 5.01 eV for II and I phases, respectively and at lower photon energy, the values are equal to 3.84 and 3.80 eV for II and I phases, respectively. The data which leads to the interpretation of electronic spectra of potassium nitrate is possible to assume that the long wavelength part of absorption band corresponds to n-π* transition. Then, the short-wavelength part is probably due to the transition in a higher excited state of symmetry π-π*. The mean values of crystalline sizes are determined by scanning electron microscopy analysis. Such information can considerably aid in understanding the process of transformations near the phase crystal modifications at 129°C.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 734-740
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
State of the Art Molecular Beam Epitaxy of III-V Compounds
Autorzy:
Foxon, C. T.
Powiązania:
https://bibliotekanauki.pl/articles/1933668.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
61.50.Cj
68.55.Bd
72.20.-i
Opis:
This paper discusses molecular beam epitaxy with particular emphasis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 559-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shielding Effectiveness of Ceramic Bodies Produced with Natural Zeolite
Autorzy:
Kanberoğlu, B.
Şükran Demirkıran, A.
Powiązania:
https://bibliotekanauki.pl/articles/1182903.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Je
07.50.Hp
13.40.-f
72.20.-i
Opis:
In this study, electromagnetic shielding effectiveness of ceramic bodies produced with natural zeolite illuminated by an electromagnetic pulse is investigated. A matrix model is used to calculate the propagation of electromagnetic pulse through sample. Shielding effectiveness of sample is determined for both transmitted electric and magnetic fields. Mathematical theory of the interaction and the shielding effectiveness of the sample is determined as a function of frequency, thickness of the material and the incidence angle of electromagnetic pulse. Zeolites used in this study were supplied from ETI Holding Company located in Turkey. Water was added as a binder and disc samples were shaped by uniaxial dry pressing at pressing pressure of 1.5 tone. Samples were fired in an electric furnace with a heating rate of 10°C/min at 1150C with a period of 60 min. Electrical measurements are performed to determine the dielectric constant and dielectric loss tangent at 25C constant temperature between frequency range from 1 kHz up to 2 MHz.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 642-644
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semiconductor Materials for Ultrafast Photoswitches
Autorzy:
Coutaz, J.-L
Powiązania:
https://bibliotekanauki.pl/articles/2035566.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
85.60.Dw
72.20.-i
72.40.+w
72.80.Ey
42.65.Re
Opis:
This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 495-512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semi-conducting properties of titanium dioxide layer on surface of Ti-15Mo implant alloy in biological milieu
Autorzy:
Szklarska, M.
Dercz, G.
Kubisztal, J.
Balin, K.
Łosiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1152668.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.85.jj
82.45.Bb
72.20.-i
Opis:
The object of this work was to investigate structure, electrochemical behavior and semiconducting properties of the TiO₂ oxide layer on the Ti-15Mo implant alloy surface in normal and inflammatory conditions of physiological saline solution. X-ray photoelectron spectroscopy measurements confirm the presence of the oxide layer on the Ti-15Mo alloy surface. Electrochemical studies indicate excellent corrosion resistance of Ti-15Mo alloy in physiological saline solution. It was found that the investigated material under normal and inflammatory conditions behave like an insulator and n-type semiconductor, respectively.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1085-1087
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Scattering of Excitons by Phonons in Quantum Wells
Autorzy:
Bardyszewski, W.
Prywata, M.
Powiązania:
https://bibliotekanauki.pl/articles/1947245.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
71.38.+i
72.80.Ey
Opis:
A method to describe the effects of the exciton-optical phonon interaction is presented using the cumulant expansion approximation. The functional-integral technique of coherent phonon states is used in order to justify the commonly used model Hamiltonian and generate the proper perturbation series. The influence of the mutual electron-hole screening on the polaronic effects in quantum wells is analyzed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 715-718
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polaron Problem in Quantum Wells
Autorzy:
Bardyszewski, W.
Prywata, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934053.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
71.38.+i
73.20.Dx
Opis:
The effect of polar interaction between an electron in a quantum well and bulk longitudinal optical phonons is analysed. Electron spectral density function is calculated in the lowest order cumulant approximation. The position and linewidth of the quasiparticle peak are obtained as a function of quantum well width and temperature.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 969-973
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Effect and Space Charge Limited Current Analysis in $TlGaTe_2$ Crystals
Autorzy:
Qasrawi, A.
Yaseen, T.
Eghbariy, B.
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1419787.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
72.20.Ht
72.40.+w
Opis:
Anisotropic space charge limited current density analysis and photovoltaic effect in $TlGaTe_2$ single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficiently low electric field values, the activation energy of the current density is found to depend on the one half power of electric field. At high electric fields, the activation energy is field invariant. This behavior is found to be due to the Pool-Frenkel effect and due to a trap set located at 0.26 eV, respectively. Along the c-axis the crystal is observed to operate under the Child-Langmuir space charge limited regime. $TlGaTe_2$ crystals are found to exhibit photovoltaic properties. The open circuit photovoltage is recorded as a function of illumination intensity at room temperature.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 152-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoionization of Ge¯-DX State in GaAs
Autorzy:
Piotrzkowski, R.
Dmowski, L. H.
Powiązania:
https://bibliotekanauki.pl/articles/1968412.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.Mt
71.55.-i
72.40.+w
Opis:
We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 950-952
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 65

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