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Wyświetlanie 1-15 z 65
Tytuł:
Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2014087.pdf
Data publikacji:
2000-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.-b
72.20.-i
Opis:
In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.
Źródło:
Acta Physica Polonica A; 2000, 98, 1-2; 123-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, Z.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2011094.pdf
Data publikacji:
1999-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
78.60.-b
Opis:
Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
Źródło:
Acta Physica Polonica A; 1999, 96, 3-4; 475-482
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Dynamics in Crystalline Semiconductors
Autorzy:
Zawadzki, W.
Powiązania:
https://bibliotekanauki.pl/articles/1400405.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.28.+d
73.61.Ey
72.20.-i
Opis:
Electron dynamics in crystalline semiconductors is described by distinguishing between an instantaneous velocity related to electron's momentum and an average velocity related to its quasi-momentum in a periodic potential. It is shown that the electron velocity used in the theory of electron transport and free-carrier optics is the average electron velocity, not the instantaneous velocity. An effective mass of charge carriers in solids is considered and it is demonstrated that, in contrast to the "acceleration" mass introduced in textbooks, it is a "velocity" mass relating carrier velocity to its quasi-momentum that is a much more useful physical quantity. Among other advantages, the velocity mass is a scalar for spherical but nonparabolic energy bands ϵ(k), whereas the acceleration mass is not a scalar. Important applications of the velocity mass are indicated. A two-band k·p^ model is introduced as the simplest example of a band structure that still keeps track of the periodic lattice potential. It is remarked that the two-band model, adequately describing narrow-gap semiconductors (including zero-gap graphene), strongly resembles the special theory of relativity. Instructive examples of the "semi-relativistic" analogy are given. The presentation has both scientific and pedagogical aspects.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 132-138
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
Autorzy:
Yildirim, T.
Gasanly, N.
Turan, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400156.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.20.Jv
72.80.Jc
Opis:
As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 766-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DX Puzzle: Where Are We Now?
Autorzy:
Wilamowski, Z.
Suski, T.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/1920958.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
71.55.-i
Opis:
A brief review of the experimental data on the metastable DX-centers in AlGaAs is presented. The experimental proofs of the two-electron nature and of the intermediate, one-electron state of the DX-centers are discussed. We collect the available experimental data on the ground state, electron-emission and capture energies and we discuss the nature of the lattice barrier. The effect of splitting of these energies in AlGaAs alloys and the consequences of the splitting on the capture and emission kinetics are analyzed. The different character of the barrier and of the alloy splitting for donors of the IV and VI group is underlined. The necessity to consider the interdonor Coulomb interaction when discussing the experimental data is also pointed out.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 561-571
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers
Autorzy:
Wilamowski, Z.
Jantsch, W.
Ostermayer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1888154.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
71.55.-i
Opis:
The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 283-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
La-doped and La/Mn-co-doped Barium Titanate Ceramics
Autorzy:
Vijatović Petrović, M.
Bobić, J.
Grigalaitis, R.
Stojanović, B.
Banys, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400499.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.20.Ka
81.40.Ef
77.80.B-
72.20.-i
84.37.+q
Opis:
Barium titanate ceramics doped with 0.3 mol.% lanthanum and co-doped with 0.3 mol.% lanthanum and 0.05 mol.% manganese were investigated. The powders were prepared by a modified polymeric precursor method based on the Pechini process. The ceramics were obtained by sintering at 1300C for 8 h. The influence of dopants on structural changes and grain size reduction was analyzed. The presence of dopants influenced the tetragonality of the barium titanate crystal structure. Reduction of polygonal grain size with dopant addition was noticed. In the doped ceramics, characteristic phase transitions were shifted to lower temperatures in comparison with pure barium titanate. The dielectric permittivity value showed the tendency of a slight increase with lanthanum addition and further increase with adding of manganese. La as a single dopant increased the diffuseness of phase transitions indicating the formation of a diffuse ferroelectric material but in the co-doped ceramics the phase transition diffuseness decreased. The resistivity of the co-doped ceramics was higher than for lanthanum doped ceramics, indicating possible segregation of manganese at grain boundaries that influenced the total resistivity of the material.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 155-160
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroconductive and Dielectric Properties of Composites Based on Bismuth Vanadate
Autorzy:
Torba, J.
Golubko, N.
Fortalnova, E.
Kaleva, G.
Safronenko, M.
Venskovskii, N.
Politova, E.
Powiązania:
https://bibliotekanauki.pl/articles/1549689.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Tm
77.22.Ch
72.20.-i
61.72.-y
Opis:
Ceramic composites $(100 - n)Bi_{4}V_{2}O_{11-z}-nCe_{0.9}Gd_{0.1}O_{1.9}$ with n=0÷25 wt% were prepared and studied by the X-ray diffraction, dielectric spectroscopy, and impedance methods. Slight increase in the unit cell volume accompanied by monotonous decrease in temperatures and broadening of the α-β and β-γ phase transitions with increasing fluorite content was observed in the composites studied. Increase in melting temperatures of composites with n ≥ 10 with the retention of their high ionic conductivity was also proved.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 24-26
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure and Photoemission States of $Bi_{1.96}Mg_{0.04}Se_3$
Autorzy:
Tokarz, W.
Zalecki, R.
Kowalik, M.
Kołodziejczyk, A.
Kozłowski, A.
Miotkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1374118.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.55.Ak
72.80.Ga
75.47.Lx
79.60.-i
Opis:
We present theoretical band structure calculations and ultraviolet electron photoemission spectroscopy of a topological insulator $Bi_{1.96}Mg_{0.04}Se_3$. Our calculations were based on the first-principles density functional theory with general gradient approximation using Wien2k package with the spin-orbit interaction included by a second-variation method. The R3̅m crystal structure was optimized. In consequence, 4% decrease of volume and 3% decrease of ratio c/a was obtained. This modified structure was multiplied three times in a and b direction in order to place proper amount of Mg. Final crystal structure P3m1 with 135 atoms was used for the calculations. As a result metallic band structure was obtained with conduction band extended from -5.6 eV up to 0.16 eV. It composes mostly from Se p states. Comparison of total DOS with ultraviolet photoemission spectrum shows similar features.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-127-A-129
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure and Photoemission States of $La_{2//3}Pb_{1//3}MnO_3$
Autorzy:
Tokarz, W.
Kowalik, M.
Zalecki, R.
Kołodziejczyk, A.
Powiązania:
https://bibliotekanauki.pl/articles/1427488.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.55.Ak
72.80.Ga
75.47.Lx
79.60.-i
Opis:
We present the theoretical study of electronic and magnetic properties in a manganese perovskite $La_{2//3}Pb_{1//3}MnO_3$. The calculations were carried out in frame of the first-principles density functional theory with the general gradient approximation using the WIEN 2K package. The P3c1 crystal structure was taken from the detailed X-ray diffraction data for the perovskite. The exact exchange energy was utilized for Mn d electrons. Density of states was determined by the modified tetrahedron method. As a result we get a valence band for the spin up and down density of states with the gap for the latter of 1.85 eV. We noticed that conduction band is mainly dominated by d spin up manganese electrons and $Mn (d_{xz}, d_{yz})$ states have twice larger contribution than $(d_{x^2 - y^2}, d_{xy})$. We attribute this to $Mn-O_6$ octahedral tilting. From the same reason $d_{3z^2 - r^2}$ state has no contribution to the density of states at the Fermi energy $(E_{F})$. Comparison of total density of states with the ultraviolet photoemission spectroscopy measurements shows similar features especially as far as the lead spectral intensity from the 6s electrons at about - 10 eV is concerned. The calculated total magnetic moment per formula unit is 3.66 $μ_{B}$, the measured one 3.48 $μ_{B}$/f.u.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1151-1153
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure of $La_{2//3}Pb_{1//3}Mn_{2//3}Fe_{1//3}O_3$
Autorzy:
Tokarz, W.
Kowalik, M.
Kołodziejczyk, A.
Powiązania:
https://bibliotekanauki.pl/articles/1431533.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.-b
71.55.Ak
72.80.Ga
75.47.lx
79.60.-i
Opis:
We present theoretical studies of electric and magnetic properties in manganese perovskite $La_{2//3}Pb_{1//3}Mn_{2//3}Fe_{1//3}O_3$. The calculations were carried out by means of the first-principles density functional theory (DFT) with general gradient approximation GGA+U using Wien2K package. The P-3c1 crystal structure was chosen from the detailed X-ray diffraction data for the perovskite. For Mn and Fe d electrons exact exchange energy was utilized. Different orientation of magnetic moments on Mn and Fe atoms was considered. The computed density of states display band gap for both spin orientations in accord with our previous work, indicating that this compound should show an insulating ground state
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 876-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semi-conducting properties of titanium dioxide layer on surface of Ti-15Mo implant alloy in biological milieu
Autorzy:
Szklarska, M.
Dercz, G.
Kubisztal, J.
Balin, K.
Łosiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1152668.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.85.jj
82.45.Bb
72.20.-i
Opis:
The object of this work was to investigate structure, electrochemical behavior and semiconducting properties of the TiO₂ oxide layer on the Ti-15Mo implant alloy surface in normal and inflammatory conditions of physiological saline solution. X-ray photoelectron spectroscopy measurements confirm the presence of the oxide layer on the Ti-15Mo alloy surface. Electrochemical studies indicate excellent corrosion resistance of Ti-15Mo alloy in physiological saline solution. It was found that the investigated material under normal and inflammatory conditions behave like an insulator and n-type semiconductor, respectively.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1085-1087
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
Autorzy:
Suproniuk, M.
Kamiński, P.
Kozłowski, R.
Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1364028.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
71.55.-i
72.20.-i
Opis:
A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1042-1048
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indications for Diamagnetic Shift in the Ground State of Boron in Silicon
Autorzy:
Stöhr, M.
Chroboczek, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/1891427.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
71.70.-d
72.20.-i
Opis:
Indications for the observation of the diamagnetic shrinkage of the boron acceptor wave function (WF) in Si are reported. Uniaxial stress (X) was used to split the ground state (GS) of the boron acceptor into two energy levels with spatially complementary WF. The magnetic field selectively induces a shrinking of one of the two WF, depending on whether it is applied parallel or perpendicular to the X axis. As a result, the hopping transitions between lower and higher energy levels are redistributed, leading to significant changes in the activation energy ε$\text{}_{3}$. This effect was borne out by experiment.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 465-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Controlling Mechanisms of Creep Deformation of New Air-Hardenable TiAl-Based Alloy
Autorzy:
Staneková, H.
Lapin, J.
Pelachová, T.
Powiązania:
https://bibliotekanauki.pl/articles/1418511.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
62.20.F-
62.40.+i
81.30.Mh
83.50.-v
Opis:
In the present work, controlling mechanisms of creep deformation of a new cast air-hardenable Ti-46Al-8Ta [at.%] alloy was studied. Long-term constant load tensile creep tests combined with an abrupt change of the applied stress were performed at 700°C. The response of the alloy to a stress reduction is analyzed. Transient behaviour with zero creep before recommencing creep at a reduced load is related to possible creep deformation mechanisms. The dislocation microstructures are analysed for creep strains corresponding to the minimum creep rate by transmission electron microscopy. The controlling mechanisms of creep deformation are identified from the transient creep behaviour of the alloy during stress reduction, the stress exponent and dislocation microstructures observed after creep testing.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 512-515
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 65

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