Indications for Diamagnetic Shift in the Ground State of Boron in Silicon

Indications for the observation of the diamagnetic shrinkage of the boron acceptor wave function (WF) in Si are reported. Uniaxial stress (X) was used to split the ground state (GS) of the boron acceptor into two energy levels with spatially complementary WF. The magnetic field selectively induces a shrinking of one of the two WF, depending on whether it is applied parallel or perpendicular to the X axis. As a result, the hopping transitions between lower and higher energy levels are redistributed, leading to significant changes in the activation energy ε$\text{}_{3}$. This effect was borne out by experiment.