Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "72.10.Di" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 19
Tytuł:
Carrier Heating Efficiency in Optically Detected Cyclotron Resonance Experiment
Autorzy:
Dedulewicz, S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929627.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Gq
72.10.Di
72.10.Fk
Opis:
Monte Carlo calculations of carrier heating efficiency in optically detected cyclotron resonance experiment are presented. It is shown that electrons accelerated by microwave electric field gain energy sufficient for impact ionization of shallow centers and for exciton dissociation. It is also explained why very sharp thresholds for impact processes were observed in the optically detected cyclotron resonance investigations.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 535-537
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Nonequilibrium Plasmons on Electron-Plasmon Interactions in Semiconductors
Autorzy:
Popov, V. V.
Bagaeva, T. Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1968414.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.45.Gm
72.10.Di
Opis:
The effect of nonequilibrium plasmons on the steady-state high-dc-field response of electron gas in n-GaAs is numerically studied via iterative procedure using the Monte Carlo simulation algorithm for hot-electron transport and the Boltzmann equation for plasmons. The electron population inversion in wave vector space along the electric field is predicted to exist for fields in excess of about 10 kVcm. The plasmon distribution disturbances leave the steady-state velocity at low fields almost unaffected but lead to reduction of that up to 10% for fields around and above the maximum of the velocity-field characteristics.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 963-966
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Polarons in Two-Dimensional Systems
Autorzy:
Morkowski, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/2011229.pdf
Data publikacji:
2000-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
72.10.Di
74.20.Mn
Opis:
The problem of motion of holes on a square lattice of antiferromagnetically ordered spins is considered. An overview of the theory of hole dynamics in the antiferromagnetic background is presented. Motion of a single hole is rather well understood both by numerical and analytical methods. For small but finite concentration of holes a treatment analogous to the standard polaron theory is discussed starting with an exact mapping of the t-J Hamiltonian into holon and pseudospin variables.
Źródło:
Acta Physica Polonica A; 2000, 97, 1; 101-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment
Autorzy:
Baj, M.
Gryglas, M.
Jouault, B.
Maude, D.
Faini, G.
Gennser, U.
Cavanna, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046906.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.40.Gk
73.20.Hb
72.10.Di
72.10.Fk
Opis:
Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X$\text{}_{xy}$ and X$\text{}_{z}$ valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X$\text{}_{xy}$ states can be seen without any phonon participation.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 157-162
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Polarons in Antiferromagnetic Planes
Autorzy:
Morkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047298.pdf
Data publikacji:
2007-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.27.+a
72.10.Di
74.20.Mn
Opis:
In the lecture the theory of spin polarons is reviewed on the basis of its analogy with the theory of lattice polarons. The energy dispersion curve for a single polaron in a two-dimensional antiferromagnetic square lattice is calculated in the self-consistent Born approximation. Also in self-consistent Born approximation the energy of a pair of interacting spin polarons is calculated. The results of calculations for realistic values of parameters of the model lead to the conclusion that pairing of spin polarons is not a likely mechanism of superconductivity in cuprates.
Źródło:
Acta Physica Polonica A; 2007, 111, 4; 397-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Autorzy:
Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V.
Powiązania:
https://bibliotekanauki.pl/articles/1813388.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
73.21.Fg
73.40.Kp
Opis:
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Correlations Effect on the Electrical Resistivity in Rare Earth Intermetallics
Autorzy:
Szukiel, A.
Peisert, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812330.pdf
Data publikacji:
2008-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Gm
72.10.Di
72.15.Eb
Opis:
The magnetic resistance anomaly in the paramagnetic phase of ordered cubic rare earths systems is considered. Within simple model of the free electrons scattering on the localized moments of magnetic ions system in the Born approximation it is shown that the negative temperature coefficient of the resistivity can be attributed to the spin correlations. The condition for the anomaly is formulated, which generalizes the ones known for the crystal field-free systems in the critical region. The conclusions are illustrated by the results of the resistivity calculations for DyAg and their comparison with the experimental data.
Źródło:
Acta Physica Polonica A; 2008, 114, 1; 229-233
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transient Response of Electrons and Phonons in ZnTe Crystals
Autorzy:
Brazis, R.
Raguotis, R.
Powiązania:
https://bibliotekanauki.pl/articles/1813220.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
72.20.Ht
72.15.Lh
78.45.+h
Opis:
The response of electron and phonon ensemble to the switching on and off electric field E in n-type ZnTe crystals is simulated by Monte Carlo method. The results at T=10 K show significant accumulation of LO-phonons and the LO phonon band population inversion with respect to the LA band;the inversion is necessary for the stimulated transfer of LO-LA energy difference to photons. The maximum inversion is at E=7 kV/cm. At T=300 K no phonon band inversion but fast (sub-picosecond) drift velocity switching with ≈100 GHz repetition is feasible.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 933-936
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon-Induced Pure Dephasing of Two-Electron Spin States in Vertical Quantum Dot Molecules
Autorzy:
Roszak, K.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791332.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
03.65.Yz
72.10.Di
03.67.Lx
Opis:
Phonon-induced dephasing of two-electron spin states in two vertically stacked self-assembled GaAs/InGaAs quantum dots is studied. A pure dephasing process due to elastic phonon scattering is found to dominate at low temperatures. This process is independent of the spin-orbit coupling and does not require the presence of a magnetic field. It relies on interdot tunneling and the Pauli principle, which make the double quantum dot gate for spin based quantum computing possible, and therefore cannot be avoided.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 877-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reiters Polaron Wave Function Applied to a t_{2_g} Orbital t-J Model
Autorzy:
Wohlfeld, K.
Oleś, A.
Daghofer, M.
Horsch, P.
Powiązania:
https://bibliotekanauki.pl/articles/1810332.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
75.30.Ds
71.38.-k
72.10.Di
Opis:
Using the self-consistent Born approximation we calculate Reiter's wave function for a single hole introduced into the undoped and orbitally ordered ground state of the t-J model with $t_{2g}$ orbital degrees of freedom. While the number of excitations is similar to the spin t-J model for a given J/t, a distinct structure of the calculated wave function and its momentum dependence is identified suggesting the formation of a novel type of mobile polarons.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 110-113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Singlet-Triplet Dephasing in Asymmetric Quantum Dot Molecules
Autorzy:
Marcinowski, Ł.
Roszak, K.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791331.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
03.65.Yz
72.10.Di
03.67.Lx
Opis:
We discuss pure dephasing of singlet-triplet superpositions in two-electron double quantum dots due to elastic phonon scattering. We generalize our previous results to a system built of two non-identical dots. We show that the asymmetry must be very strong in order to considerably affect the dephasing rate.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 874-876
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:
Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:
https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:
The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity and Electronic Structure of the $Tb_{x}Gd_{1-x}Ni_3$ System
Autorzy:
Chełkowska, G.
Bajorek, A.
Chrobak, A.
Kwiecień-Grudziecka, M.
Powiązania:
https://bibliotekanauki.pl/articles/1427391.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Eh
71.20.Lp
72.15.-v
72.10.Di
79.60.-i
Opis:
In the paper the electric properties and electronic structure of the intermetallic $Tb_{x}Gd_{1-x}Ni_3$ compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature $(T_{C})$ and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in ρ(T) have been analyzed. Moreover, the reduced form of the electrical resistivity $ρ_{Z} (T - T_{0})$ indicates a deviation from the linearity for x > 0.2. This kind of behaviour can be attributed to density of d states near by the Fermi level $(E_{F})$ which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the influence of Tb/Gd substitution on the electronic structure.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1139-1141
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum versus Classical Polarons in a Ferromagnetic $CuO_3$-Like Chain
Autorzy:
Bieniasz, K.
Oleś, A.
Powiązania:
https://bibliotekanauki.pl/articles/1374771.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.Di
75.10.Pq
75.50.Dd
79.60.-i
Opis:
We present an exact solution for an itinerant hole added into the oxygen orbitals of a $CuO_{3}$-like ferromagnetic chain. Using the Green function method, the quantum polarons obtained for the Heisenberg SU(2) interaction between localized Cu spins are compared with the polarons in the Ising chain. We find that magnons with large energy are favorable towards quasiparticle existence, even in the case of relatively modest electron-magnon coupling. We observe two quasiparticle states with dispersion ~2t each, which emerge from the incoherent continuum when the exchange coupling J increases. Quantum fluctuations in the spin system modify the incoherent part of the spectrum and change the spectral function qualitatively, beyond the bands derived from the perturbation theory.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-80-A-83
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies