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Wyświetlanie 1-15 z 16
Tytuł:
Resonant State of 4f$\text{}^{14}\text{}^{/}\text{}^{13}$ Yb Ion in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Story, T.
Slynko, E. T.
Vygranenko, Yu.K.
Willekens, M. M. H.
Swagten, H. J. M.
de Jonge, W. J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1950801.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
75.20.Ck
Opis:
The study of transport and of magnetic properties of Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te:Yb mixed crystals (0 ≤ x ≤ 0.04) is reported. It is shown that Yb forms a donor state resonant with the PbTe valence band. The donor state position may be tuned (shifted relative to the energy gap) by admixture of Ge. The properties of the Yb ion in the Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te matrix makes the system unique from the point of view of magnetic properties. It is demonstrated that the change of the conductivity type from p to n induces transitions from the paramagnetic state to the diamagnetic one.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 801-804
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:
Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Symmetry of the Sulfur Pair-Related Defect in Silicon
Autorzy:
Bennebroek, M. T.
Zakrzewski, A.
Frens, A. M.
Schmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929739.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Lh
71.55.Ht
Opis:
A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C$\text{}_{1h}$.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 725-728
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon
Autorzy:
Kopalko, K.
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1890843.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD$\text{}^{+}$ . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
Autorzy:
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929652.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 555-558
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Luminescence Study of Silicon-Vacancy in 6HSi
Autorzy:
Wysmołek, A.
Wardak, K.
Stępniewski, R.
Baranowski, J.
Potemski, M.
Tymicki, E.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/2047066.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
71.55.-i
71.55.Ht
Opis:
The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V$\text{}_{2}$ line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V$\text{}_{2}$ line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V$\text{}_{2}$-line in silicon carbide.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 437-442
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Indications for Diamagnetic Shift in the Ground State of Boron in Silicon
Autorzy:
Stöhr, M.
Chroboczek, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/1891427.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
71.70.-d
72.20.-i
Opis:
Indications for the observation of the diamagnetic shrinkage of the boron acceptor wave function (WF) in Si are reported. Uniaxial stress (X) was used to split the ground state (GS) of the boron acceptor into two energy levels with spatially complementary WF. The magnetic field selectively induces a shrinking of one of the two WF, depending on whether it is applied parallel or perpendicular to the X axis. As a result, the hopping transitions between lower and higher energy levels are redistributed, leading to significant changes in the activation energy ε$\text{}_{3}$. This effect was borne out by experiment.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 465-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigations of the Optical and EPR Spectra for $Cr^{3+}$ Ions in Diammonium Hexaaqua Magnesium Sulphate Single Crystal
Autorzy:
Wei, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1535818.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Fc
71.70.Ch
71.55.Ht
Opis:
The relations between spin-Hamiltonian parameters and local structure around $Cr^{3+}$ in diammonium hexaaqua magnesium sulphate single crystal were established. On the basis of this, the spin-Hamiltonian parameters, optical spectra and the local structure were investigated successfully. The calculated results are in good agreement with experimental data. This shows that the distortion model adopted in this paper is reasonable.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 670-672
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigations of the EPR and Optical Spectra for $VO^{2+}$ in $C_3H_7NO_2$ Powders
Autorzy:
Wei, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1537793.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Fc
71.70.Ch
78.50.Ec
71.55.Ht
Opis:
The EPR and optical spectra for $VO^{2+}$ in $C_3 H_7 NO_2$ powders are calculated from complete diagonalization method and perturbation theory method, respectively. The calculated results are in good agreement with observed values. The negative signs of hyperfine structure constants $A_∥$ and $A_⊥$ for $VO^{2+}$ in $C_3 H_7 NO_2$ powders are also suggested from the calculations.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 962-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopic and Laser Properties of LiNbO$\text{}_{3}$:Dy$\text{}^{3+}$ Crystals
Autorzy:
Malinowski, M.
Myziak, P.
Piramidowicz, R.
Pracka, I.
Łukasiewicz, T.
Surma, B.
Kaczmarek, S.
Kopczyński, K.
Mierczyk, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1945542.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.40.Ha
78.47.+p
78.55.Hx
Opis:
The spectroscopic properties of trivalent dysprosium (Dy$\text{}^{3+}$) doped LiNbO$\text{}_{3}$ crystals have been investigated at various temperatures. Absorption, emission, excitation and lifetime measurements have been performed and discussed in the framework of Judd-Ofelt approach. The stimulated emission cross sections of the strongest transitions of Dy $\text{}^{3+}$ ion have been estimated. A stimulated emission has been demonstrated in the near infrared.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 181-189
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Spin and Spin-Other-Orbit Interactions of Spin-Hamiltonian Parameters for $3d^{2(8)}$ Ions in $Al_2O_3$ Crystals
Autorzy:
Wei, Q.
Guo, L.
Yang, Z.
Wei, B.
Powiązania:
https://bibliotekanauki.pl/articles/1505102.pdf
Data publikacji:
2011-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Fc
71.70.Ch
75.10.Dg
71.55.Ht
Opis:
By considering weaker magnetic interactions (including spin-spin and spin-other-orbit interactions) in Hamiltonian, the spin-Hamiltonian parameters, including the zero-field splitting parameter D and g factors $(g_∥, g_⊥)$ for $3d^{2(8)}$ ions in $Al_2O_3$ crystals have been investigated. The results show that the contributions to D, $g_∥$ and $g_⊥$ from the spin-orbit interaction are dominant. The contributions from weaker magnetic interactions to D decrease (increase) with increasing charge of impurity ions for $3d^2 (3d^8)$ ions.
Źródło:
Acta Physica Polonica A; 2011, 119, 6; 857-859
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP
Autorzy:
Subačius, L.
Kašalynas, I.
Vingelis, M.
Aleksiejūnas, R.
Jarašiūnas, K.
Powiązania:
https://bibliotekanauki.pl/articles/1179495.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ht
Opis:
We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 280-285
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector
Autorzy:
Yűcel Kurt, H.
Salamov, B.
Powiązania:
https://bibliotekanauki.pl/articles/1812045.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ht
Opis:
In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (i.e. electrode separation, gas pressure, diameter of the GaAs photodetector, etc.) on electrical breakdown and current oscillations were studied. Non-stationary and non-homogeneous states are generated in the structure, through the spatially uniform irradiation of the semiconductor photodetector. Instabilities occur due to the nonlinear features of the semiconductor photocathode, while the gas discharge serves to visualize transport processes in GaAs. Spatiotemporal variations of current and discharge light emissions are studied with the above-mentioned control parameters. Transformation of the profile and amplitude of the current densities of the filaments in different regions of the current-voltage characteristic are widely studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values are observed. A semiconductor gas discharge structure with an N-shaped current-voltage characteristic is analyzed via both the current and discharge light emissions data which shows the electrical instability in the GaAs photodetector.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 819-834
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating
Autorzy:
Subačius, L.
Kašalynas, I.
Powiązania:
https://bibliotekanauki.pl/articles/1179478.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ht
Opis:
Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 275-279
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Induced Localization in Semiinsulating GaAs
Autorzy:
Łusakowski, J.
Merten, R.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920957.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
72.15.Gd
72.20.Ht
Opis:
Conductivity experiments were carried out on samples of semiinsulating GaAs at liquid helium temperature in magnetic field up to 6 T. During the measurements the samples were persistently illuminated with infrared light which allowed to populate with electrons a part of shallow donor and conduction band states. Current-voltage characteristics showed an abrupt jump of the current at a threshold electric field which is interpreted as a result of impact ionization of electrons bound on shallow donors and in the tail of the bottom of the conduction band. The jump of the current decreases as the magnetic field increases and disappears for a sufficiently high magnetic field B$\text{}_{0}$. The value of B$\text{}_{0}$ grows with growing light intensity. These results are explained by magnetic-field induced localization of electrons on long-range fluctuations of the electrostatic potential. The localization transition was confirmed by the current dependence on temperature measured at different magnetic fields. A peak on these curves was observed. Its position coincides with the temperature above which impact ionization is not observed. A possible mechanism explaining appearance of the peak is presented.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 551-560
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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