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Tytuł:
III-V Semiconducting Nitrides Energy Gap under Pressure
Autorzy:
Perlin, P.
Gorczyca, I.
Teisseyre, H.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Grzegory, I.
Christensen, N. E.
Powiązania:
https://bibliotekanauki.pl/articles/1921585.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 674-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Photovoltage Spectroscopy of Cd$\text{}_{0.97}$Fe$\text{}_{0.03}$Se and Cd$\text{}_{0.97}$Fe$\text{}_{0.03}$Te Crystals
Autorzy:
Sarem, A.
Οrlowski, B.
Kuźmiński, S.
Powiązania:
https://bibliotekanauki.pl/articles/1879851.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
The surface electronic structure of the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se and Cd$\text{}_{1-x}$Fe$\text{}_{x}$Τe crystals with x = 0 and x = 0.03 has been studied by Surface Photovoltage Spectroscopy (SPS). The change of surface photovoltage was observed due to photo-excitation of the electrons from the deep donor state Fe 3d to conduction band edge. This gave possibility to determine energy position of the Fe 3d state at 0.64 and 0.15 eV over the top of the valence band for CdSe and CdTe, respectively.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 183-186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature and Composition Dependence of Photovoltaic Spectra of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se Diodes
Autorzy:
Khoi, Le Van
Szczerbakow, A.
Karczewski, G.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1886570.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
Photovoltaic spectra of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se homojunctions have been measured in the infrared spectral region within the temperature range 15-300 K. The junctions have been formed by cadmium diffusion into the p-type Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals with manganese content 0 ≤ x ≤ 0.08. From the positions of the photovoltaic maxima the energy band gap of the diode material has been determined. A phenomenological expression describing the energy band gap of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se as a function of temperature and crystal composition has been proposed. In diodes containing high manganese content x = 0.06 and x = 0.08 a second photovoltaic maximum caused by indirect optical transitions between the main conduction band and the secondary valence band located along the $\Sigma$-axis of the Brillouin zone has been observed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 287-290
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Composition and Temperature Dependence of Energy-Band Parameters of Zn$\text{}_{x}$Cd$\text{}_{y}$Hg$\text{}_{1-x-y}$Te
Autorzy:
Andrukhiv, A.
Ivanov-Omskii, V.
Polit, J.
Sheregii, E.
Powiązania:
https://bibliotekanauki.pl/articles/1876920.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
The influence of addition of Zn on band parameters of Zn$\text{}_{x}$Cd$\text{}_{y}$Hg$\text{}_{1-x-y}$Te solid solution at different temperatures (4.2-200 K) was investigated. The cyclotron resonance at 4.2 K and magnetophonon resonance at 77-200 K were used to determine band structure parameters. The temperature dependence of band structure parameters (energy gap, effective mass of electron) for the composition of series of epilayers (x varied in 0.08-0.20 range and y - 0.07-0.12) was obtained. It is found that band structure parameters for some compositions (for example x = 0.17, y = 0.08) are almost independent from temperature and equal: γ₁$\text{}^{L}$= 19.55, γ₂$\text{}^{L}$ = γ₃$\text{}^{L}$ = 8.5, K$\text{}^{L}$ = 6.48, F = -0.5, E$\text{}_{g}$ = 0.35 eV, E$\text{}_{p}$ = 17.9 eV. The effective mass of electrons was found to be greater with addition of Zn while the effective mass of heavy holes is left unchanged.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 513-517
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Chemistry on the Energy Band Structure: AlAs Versus GaAs
Autorzy:
Bogusławski, P.
Gorczyca, I.
Powiązania:
https://bibliotekanauki.pl/articles/1891295.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
71.10.+x
Opis:
Energy band structure of AlAs and GaAs is analyzed in terms of the energy structure of the constituent atoms. Conduction band wave functions are projected on s-, p-, and d-symmetry atomic orbitals. The resulting information is combined with the eigenenergies of Al and Ga atoms, in order to-discuss the character of the band gaps, and the sign of deformation potentials.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 433-436
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Extended X-ray Bremsstrahlung Isochromat Fine Structure of SiO$\text{}_{2}$
Autorzy:
Sobczak, E.
Nietubyć, R.
Powiązania:
https://bibliotekanauki.pl/articles/1932134.pdf
Data publikacji:
1995-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
79.20.Kz
Opis:
X-ray bremsstrahlung isochromat of amorphous SiO$\text{}_{2}$ deposited on Si crystal was measured in an energy range up to 250 eV above the threshold. Extended X-ray bremsstrahlung isochromat he structure (EXBIFS) was observed up to 150 eV for SiO$\text{}_{2}$ studied. The Fourier transform of EXBIFS showed two peaks originated from first and second neighbors around silicon and oxygen ions. Model calculations of EXBIFS of amorphous SiO$\text{}_{2}$ were performed in terms of single scattering of spherical waves and compared with experimental results.
Źródło:
Acta Physica Polonica A; 1995, 87, 3; 649-656
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Temperature Dependence of the Band Gap in Hg$\text{}_{1-x-y}$Cd$\text{}_{x}$Mn$\text{}_{y}$Te and Hg$\text{}_{1-x}$Cd$\text{}_{x}$Te Alloys
Autorzy:
Dudziak, E.
Jędral, L. Z.
Bożym, J.
Brzeziński, J.
Powiązania:
https://bibliotekanauki.pl/articles/1886577.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
65.70.+y
Opis:
The temperature dependence of the band gap for HgCdTe and HgCdMnTe has been experimentally investigated in the temperature range of 7-250 K. The distinct nonlinear dependence has been observed in the low temperature range. It was shown that the lattice dilatation contribution calculated for HgCdTe is a significant part (about 30%) of the total temperature shift of the energy gap.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Band Structure and Refractive Index of Gallium Nitride Under Pressure
Autorzy:
Perlin, P.
Gorczyca, I.
Suski, T.
Teisseyre, H.
Grzegory, I.
Christensen, N.
Powiązania:
https://bibliotekanauki.pl/articles/1891272.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ci
Opis:
The effect of hydrostatic pressure on direct gap and refractive index of GaN is investigated up to 5.5 GPa. Band structure of GaN is calculated by Linear Muffin-Tin Orbitals (LMTO) method for different values of pressure. Resulting pressure coefficient of the main gap and of the refractive index are in a good agreement with the experimental ones.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 421-424
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
4f Contribution to Valence Band of Pb$\text{}_{1-x}$RE$\text{}_{x}$S (RE = Eu,Gd) Studied by Resonant Photoemission
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, E.
Orłowski, B. A.
Ghijsen, J.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1952558.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
79.60.-i
Opis:
Resonant photoemission experiments were carried out in order to reveal the contributions of partly filled Eu 4f$\text{}^{7}$ and Gd 4f$\text{}^{7}$ shells to the valence bands of Pb$\text{}_{0.95}$Eu$\text{}_{0.05}$S and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The coupling between these orbitals and the host electronic states is discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1035-1039
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnS/ZnSe Superlattices under Pressure
Autorzy:
Gorczyca, I.
Christensen, N. E.
Powiązania:
https://bibliotekanauki.pl/articles/1929746.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
73.20.Dx
Opis:
Self-consistent linear muffin-tin orbital method is used to calculate the band structure of ZnS/ZnSe (001) strained-layer superlattice and investigate the influence of hydrostatic pressure on the valence band offset (VBO). Three different strain modes corresponding to various values of the relative thicknesses of both materials are considered. A I → II type conversion associated with the conduction-band crossover between the ZnSe well and ZnS barrier layers is found in agreement with recent experimental data.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 753-756
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
s,p-d Exchange Constants of CdFeSe Semimagnetic Semiconductor
Autorzy:
Arciszewska, M.
Pakuła, K.
Perez, I.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1886791.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
71.70.Gm
71.35.+z
Opis:
We report determination of s, p-d exchange constants for hexagonal CdFeSe combining exciton splitting and magnetization measurements performed on the same samples.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition Dependence of the Energy Gap in HgFeSe - Optical Verification
Autorzy:
Szuszkiewicz, W.
Julien, C.
Bałkanski, M.
Dybko, K.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1921712.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
71.55.-i
78.30.Fs
Opis:
Infrared reflectivity was investigated for the mixed Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se crystals for x < 0.1. The theoretical analysis of the experimental curves suggests opening of the energy gap for the composition x = 0.087 at the temperature close to 80 K.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 757-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Effect on PbTe p-n Junction in the Presence of Magnetic Field
Autorzy:
Le Van, Khoi
Grodzicka, E.
Witkowska, B.
Story, T.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1929738.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ls
72.80.Ga
Opis:
Photovoltaic spectra of PbTe p-n junction have been measured in the infrared spectral region in the temperature range of 8-260 K. The p-n junctions have been formed by cadmium diffusion into the p-type PbTe crystals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltage was observed in the Faraday and Voigt configurations. Experiments were performed as a function of the magnetic field intensity at a constant wavelength of the incident light. The energy of the interband magnetooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the energy band structure for the IV-VI compounds.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 721-724
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical Study of Optical and XANES Spectra for CdTe within the k-dependent Matrix Element Approach
Autorzy:
Markowski, R.
Oleszkiewicz, J.
Kisiel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923768.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
78.20.Bh
71.25.Tn
Opis:
The reflectivity and X-ray absorption near-edge structure spectra for CdTe were calculated with the inclusion of the transition matrix elements from band structure obtained within self-consistent, relativistic linear muffin tin orbital method. The results were compared with experimental data for the case of CdTe and with our previous calculations.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of the Dipol Transition Matrix Element on the XANES and Optical Spectra for CdTe
Autorzy:
Markowski, R.
Oleszkiewicz, J.
Kisiel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1890915.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
78.20.Bh
71.25.Tn
Opis:
The reflectivity and X-ray absorption near-edge spectra (XANES) for CdTe have been calculated with inclusion of the transition matrix element from band structure obtained from self-consistent linear muffin-tin-orbital (LMTO) method. The result has been compared with experimental data for the case of CdTe.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 369-372
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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