Extended X-ray Bremsstrahlung Isochromat Fine Structure of SiO$\text{}_{2}$

X-ray bremsstrahlung isochromat of amorphous SiO$\text{}_{2}$ deposited on Si crystal was measured in an energy range up to 250 eV above the threshold. Extended X-ray bremsstrahlung isochromat he structure (EXBIFS) was observed up to 150 eV for SiO$\text{}_{2}$ studied. The Fourier transform of EXBIFS showed two peaks originated from first and second neighbors around silicon and oxygen ions. Model calculations of EXBIFS of amorphous SiO$\text{}_{2}$ were performed in terms of single scattering of spherical waves and compared with experimental results.