- Tytuł:
- Effects of RF Power on Electrical and Structural Properties of Sputtered $SnO_2$:Sb Thin Films
- Autorzy:
-
Cevher, O.
Guler, M.
Tocoglu, U.
Cetinkaya, T.
Akbulut, H.
Okumus, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1218075.pdf
- Data publikacji:
- 2014-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.-a
68.55.ag
81.15.Cd - Opis:
- In this work, antimony doped tin oxide ($SnO_2$:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The $SnO_2$:Sb thin films were deposited for 1.0 h in a mixture of Ar and $O_2$ environment with $O_2$/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of $SnO_2$:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diffraction. The average surface roughness $(R_{a})$ was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.
- Źródło:
-
Acta Physica Polonica A; 2014, 125, 2; 293-295
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł