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Tytuł:
Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications
Autorzy:
Joshua Gnanamuthu, S.
Kartharinal Punithavathy, I.
Johnson Jeyakumar, S.
Jobe Prabhakar, P.
Parasuraman, K.
Nagarethinam, V.
Usharani, K.
Balu, A.
Powiązania:
https://bibliotekanauki.pl/articles/1029811.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
77.84.Bw
78.66.Jg
68.55.Ln
78.20.Ci
73.61.Jc
Opis:
This paper reports the synthesis, crystal structure, surface morphology, optical and electrical properties of Mg-doped Sn₂S₃ thin films deposited by spray pyrolysis technique. All the films exhibit orthorhombic crystal structure with a (211) preferential orientation. Crystallite size calculations based on the Debye-Scherrer formula indicated that the Sn₂S₃ crystallite size increases with Mg content from 27.97 nm to 33.58 nm. Scanning electron microscopy images showed that all the films were very smooth composed of nanoneedle and nanoplate shaped grains. The band gap energy of the films exhibits a blue shift from 1.94 eV to 2.09 eV with increase in Mg concentration. Resistivity values of the undoped and Mg-doped Sn₂S₃ films were found to be in the order of 0.1 Ωcm. From the obtained results it is observed that the Sn₂S₃ film coated with 2 wt% Mg concentration exhibits better physical properties.
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 15-19
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical Properties of the Stellite 6 Cobalt Alloy Implanted with Nitrogen Ions
Autorzy:
Budzyński, P.
Kamiński, M.
Wiertel, M.
Pyszniak, K.
Droździel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030127.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
The effect of nitrogen ion implantation on Stellite 6 cobalt alloy was investigated. In this research, cobalt alloy was implanted with 65 keV nitrogen ions at the fluence of (1÷10)×10¹⁶ N⁺/cm². The distribution of implanted nitrogen ions and vacancies produced by them was calculated using the SRIM program. The surface morphology was examined and the elemental analysis was performed using scanning electron microscopy, energy dispersive X-ray spectroscopy and grazing incidence X-ray diffraction. The wear tests were conducted with the use of the pin-on-disc method. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear. The friction coefficient of the implanted sample at the fluence of 1×10¹⁷ N⁺/cm² increased to the values characteristic of an unimplanted sample after 5000 measurement cycles. The depth of the worn trace was about 2.0 μm. This implies that the thickness of the layer modified by the implantation process is ≈2.0 μm and exceeds the initial range of the implanted ions by an order of magnitude. This is referred to as a long-range implantation effect. The investigations have shown that the long-range effect is caused by movement of not only implanted nitrogen atoms but also carbon dopant atoms towards the friction zone. Diffusion of carbon atoms has been documented here for the first time. Furthermore, the increased content of oxygen atoms on the track bottom indicates a dominant oxidative wear of the Stellite samples after nitrogen implantation with the energy 65 keV and the fluences of 5×10¹⁶ and 10¹⁷ N⁺/cm².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 203-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Experimental characterization of antimony dopant in silicon substrate
Autorzy:
Serrar, H.
Labbani, R.
Benazzouz, C.
Powiązania:
https://bibliotekanauki.pl/articles/1065353.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
68.55.Ln
85.40.Ry
Opis:
Ion implantation is a method largely used to fabricate shallow junctions in the surface target. However, the ions are randomly redistributed and a huge damage is generated in the sample. Annealing treatments are thus necessary to restore defects and to activate the dopant. Among several elements, antimony is particularly attractive since it has low diffusivity in silicon which means that is suitable to obtain ultra shallow junctions. Moreover, antimony is attractive in many applications such as the fabrication of transistors and infrared detectors. In this work, the electrical activation of antimony is studied in case of silicon target.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 51-54
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profile Analysis of Phosphorus Implanted SiC Structures
Autorzy:
Konarski, P.
Król, K.
Miśnik, M.
Sochacki, M.
Szmidt, J.
Turek, M.
Żuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402214.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.49.Sf
68.55.Ln
82.80.Ms
85.40.Ry
Opis:
Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 864-866
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Induced Darkening in Tetrahedral Amorphous Carbon Thin Films
Autorzy:
Sandulov, M.
Berova, M.
Tsvetkova, T.
Zuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402243.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.U-
68.55.Ln
42.70.Ln
Opis:
The samples of thin film (d ≈ 40 nm) tetrahedral amorphous carbon (ta-C), deposited by the filtered cathodic vacuum arc have been implanted with N⁺ at a fluence of 3×10¹⁴ cm¯² and ion energy E=20 keV. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements. This shift is accompanied by a considerable increase of the absorption coefficient (photodarkening effect) in the measured wavelength range (350÷2500 nm). These effects could be attributed to both the additional defect introduction and the increased graphitization, as confirmed by the X-ray photoelectron spectroscopy measurements. The optical contrast thus obtained (between implanted and unimplanted film materials) could be made use of in the area of high-density optical data storage using the focused ion beams.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 953-956
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long-Range Effect in Ion-Implanted Titanium Alloys
Autorzy:
Budzynski, P.
Sielanko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402208.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
Surface modification of titanium alloy (Ti6Al4V) by nitrogen ion implantation and ion beam-assisted deposition (C, N) was investigated. The depth distribution of implanted nitrogen atoms was analysed using the Rutherford backscattering technique. Nitrogen implantation reduces the coefficient of friction and wear. A better effect can be obtained when nitrogen implantation is combined with carbon deposition. Based on the changes in the coefficients of friction and wear as well as profilograms of wear tracks, the improvement of the tribological properties was found at a depth exceeding nearly 5 times the range of the implanted nitrogen ions. Identification of the long-range effect for Ti6Al4V alloy was performed on the basis of tribological analyses. This study is a continuation of research conducted for AISI 316L and H11 steel.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method
Autorzy:
Gülen, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1205230.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.05.cp
68.55.Ln
Opis:
In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 763-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
Autorzy:
Dussan, A.
Schmidt, J.
Koropecki, R.
Powiązania:
https://bibliotekanauki.pl/articles/1207505.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
61.72.uf
Opis:
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane $(SiH_4)$ diluted in hydrogen, and diborane $(B_2H_6)$ as a dopant gas. The concentration of $B_2H_6$ in $SiH_4$ was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the $μ_{n}τ_{n}$ product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 174-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Crystal Lattice Deformation by Ion Channeling
Autorzy:
Jóźwik, P.
Sathish, N.
Nowicki, L.
Jagielski, J.
Turos, A.
Kovarik, L.
Arey, B.
Shutthanandan, S.
Jiang, W.
Dyczewski, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400434.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.85.+p
68.55.Ln
02.70.Uu
68.37.Og
Opis:
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 828-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by $Ga^{+}$ Focused Ion Beams
Autorzy:
Tsvetkova, T.
Wright, C.
Hosseini, P.
Bischoff, L.
Zuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400488.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.40.Hp
81.16.Rf
68.55.Ln
Opis:
This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H samples, $Ga^{+}$ focused ion beam implanted, have been prepared. A range of samples has been focused ion beam patterned under different implantation conditions, with emphasis on different substrate temperatures (typically from 0C temperature to around room temperature). Some of the room temperature implanted samples were further annealed at + 250C in vacuum. The focused ion beam patterned samples were then analysed using near-field techniques, like atomic force microscopy, to define optimum implantation conditions and the resulting consequences for archival data storage applications. The atomic force microscopy analysis of $Ga^{+}$ focused ion beam implanted $a-Si_{1-x}C_{x}:H$ samples at room temperature and at 0C revealed an increase of both the depth and the width of the individual lines within the focused ion beam written patterns at the lower temperature, as a result of an increased ion beam induced sputtering yield, in good agreement with the previous results for the case of $Ga^+$ broad beam implantation in $a-Si_{1-x}C_{x}:H$ and again suggesting that the best conditions for optical data storage for archival storage applications would be using $Ga^+$ ion implantation in a-SiC:H films with an optimal dose at room temperatures. Similarly, the atomic force microscopy results confirm that no advantage is expected to result from post-implantation annealing treatments.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 952-955
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
Autorzy:
Ievtushenko, A.
Khyzhun, O.
Shtepliuk, I.
Tkach, V.
Lazorenko, V.
Lashkarev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1399119.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
77.55.hf
68.55.Ln
Opis:
Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 858-861
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Noncoil-Like Inductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$ Manufactured by Ion-Beam Sputtering of Complex Targets in $Ar+O_2$ Atmosphere
Autorzy:
Zhukowski, P.
Kołtunowicz, T.
Węgierek, P.
Fedotova, J.
Fedotov, A.
Larkin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1503848.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.22.-f
81.40.Ef
84.37.+q
72.20.Ee
Opis:
This paper investigates the inductive contribution to AC conductance in the granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x}$. The initial nanocomposites studied were manufactured in $Ar+O_2$ atmosphere by ion-beam sputtering of the target containing $Fe_{0.45}Co_{0.45}Zr_{0.10}$ and alumina stripes and then subjected to the annealing procedure in air over the temperature range 373 K < $T_{a}$ < 873 K. These samples, before and after annealing, were studied using the temperature 77 K < $T_{p}$ < 300 K and frequency 50 Hz < f < 1 MHz dependences of a real part of the admittance σ(T, f). Analysis of the observed σ (f, $T_{p}$) dependences for x < 0.5 demonstrated that in the studied samples the equivalent circuits with the capacitive and noncoil-like inductive contributions can be accomplished. Just in this case, the capacitive properties of RLC circuit with the phase angle - 90° ≤ $\Theta_{L}$ < 0° are exhibited at low frequencies and the inductive properties with 0° ≤ $\Theta_{H}$ < 90° become apparent at high frequencies. A value of the critical frequency $f_{R}$, where $\Theta_{H}$ changes sign, depends on the metallic phase concentration x, measuring temperature $T_{p}$, and annealing temperature $T_{a}$.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 43-45
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistance in n-Si/$SiO_2$/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
Autorzy:
Fedotova, J.
Ivanou, D.
Ivanova, Y.
Fedotov, A.
Mazanik, A.
Svito, I.
Streltsov, E.
Saad, A.
Tyutyunnikov, S.
Kołtunowicz, T.
Demyanov, S.
Fedotova, V.
Powiązania:
https://bibliotekanauki.pl/articles/1504014.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
81.05.Rm
73.22.-f
73.50.Jt
Opis:
A study of magnetotransport in the n-Si/$SiO_2$/Ni nanostructures with granular Ni nanorods in $SiO_2$ pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/$SiO_2$/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 133-135
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microwave Techniques Investigations of ZnCoO Films Grown by Atomic Layer Deposition
Autorzy:
Łukasiewicz, M.
Cabaj, A.
Godlewski, M.
Guziewicz, E.
Wittlin, A.
Jaworski, M.
Wołoś, A.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1492931.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
Electrical and magnetic properties of ZnCoO thin films grown on silicon substrates by atomic layer deposition method are investigated. The films were grown using reactive organic precursors of zinc and cobalt. The use of these precursors allowed us the significant reduction of a growth temperature to 200°C and below, which proved to be very important for the growth of uniform films of ZnCoO. We have measured the microwave AC conductivity and EPR for two types of ZnCoO samples, with different Co fractions.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 911-913
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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