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Wyświetlanie 1-15 z 52
Tytuł:
Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964092.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz
Opis:
The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Adamczewska, J.
Misiuk, A.
Regiński, K.
Wierzchowski, W.
Wieteska, K.
Kozanecki, A.
Kuritsyn, D.
Glukhanyuk, W.
Trela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2030644.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
68.55.Ln
Opis:
The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 689-699
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Long-Range Effect in Ion-Implanted Titanium Alloys
Autorzy:
Budzynski, P.
Sielanko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402208.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
Surface modification of titanium alloy (Ti6Al4V) by nitrogen ion implantation and ion beam-assisted deposition (C, N) was investigated. The depth distribution of implanted nitrogen atoms was analysed using the Rutherford backscattering technique. Nitrogen implantation reduces the coefficient of friction and wear. A better effect can be obtained when nitrogen implantation is combined with carbon deposition. Based on the changes in the coefficients of friction and wear as well as profilograms of wear tracks, the improvement of the tribological properties was found at a depth exceeding nearly 5 times the range of the implanted nitrogen ions. Identification of the long-range effect for Ti6Al4V alloy was performed on the basis of tribological analyses. This study is a continuation of research conducted for AISI 316L and H11 steel.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mechanical Properties of the Stellite 6 Cobalt Alloy Implanted with Nitrogen Ions
Autorzy:
Budzyński, P.
Kamiński, M.
Wiertel, M.
Pyszniak, K.
Droździel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030127.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
62.20.Qp
61.82.Bg
61.80.-x
Opis:
The effect of nitrogen ion implantation on Stellite 6 cobalt alloy was investigated. In this research, cobalt alloy was implanted with 65 keV nitrogen ions at the fluence of (1÷10)×10¹⁶ N⁺/cm². The distribution of implanted nitrogen ions and vacancies produced by them was calculated using the SRIM program. The surface morphology was examined and the elemental analysis was performed using scanning electron microscopy, energy dispersive X-ray spectroscopy and grazing incidence X-ray diffraction. The wear tests were conducted with the use of the pin-on-disc method. The results demonstrate that implantation with nitrogen ions significantly reduces the friction factor and wear. The friction coefficient of the implanted sample at the fluence of 1×10¹⁷ N⁺/cm² increased to the values characteristic of an unimplanted sample after 5000 measurement cycles. The depth of the worn trace was about 2.0 μm. This implies that the thickness of the layer modified by the implantation process is ≈2.0 μm and exceeds the initial range of the implanted ions by an order of magnitude. This is referred to as a long-range implantation effect. The investigations have shown that the long-range effect is caused by movement of not only implanted nitrogen atoms but also carbon dopant atoms towards the friction zone. Diffusion of carbon atoms has been documented here for the first time. Furthermore, the increased content of oxygen atoms on the track bottom indicates a dominant oxidative wear of the Stellite samples after nitrogen implantation with the energy 65 keV and the fluences of 5×10¹⁶ and 10¹⁷ N⁺/cm².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 203-205
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
Autorzy:
Buyanov, A. V.
Holtz, P. O.
Pozina, G.
Monemar, B.
Thordson, J.
Andersson, T. G.
Powiązania:
https://bibliotekanauki.pl/articles/1968047.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.60.+g
61.72.Vv
68.55.Ln
Opis:
We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 727-732
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisite Defects in Epitaxial Films of Lutetium Doped Yttrium Iron Garnets Studied by Nuclear Magnetic Resonance
Autorzy:
Chlan, V.
Štěpánková, H.
Englich, J.
Řezníček, R.
Kouřil, K.
Kučera, M.
Nitsch, K.
Powiązania:
https://bibliotekanauki.pl/articles/1534129.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Gg
76.60.-k
76.60.Lz
68.35.Dv
68.55.Ln
Opis:
Series of lutetium doped yttrium iron garnet films is studied by means of $\text{}^{57}Fe$ nuclear magnetic resonance. Satellite spectral lines are resolved and identified in the spectra and concentrations of lutetium in dodecahedral sites as well as yttrium/lutetium antisite defects in octahedral sites are estimated. Compared to yttrium, lutetium cations are found to have stronger disposition towards creating the antisite defects.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 846-847
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen and its Complexes in Silicon
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Gosciński, K.
Andersen, O.
Powiązania:
https://bibliotekanauki.pl/articles/2014151.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 231-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Iron-Boron Pair in Silicon: Old Problem Anew
Autorzy:
Dobaczewski, L.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1946552.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
For the iron-boron pair in the p-type silicon two different configurations of the defect are observed: stable and metastable. The reported metastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rate equations for the two-step iron-boron pair dissociation allowed us to evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the metastable pair is the minority carrier injection followed by the electron-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy allowed us to demonstrate for both of the configurations the influence of the magnetic field on the hole emission.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 613-622
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Nylandsted Larsen, A.
Lundsgaard Hansen, J.
Gościński, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969056.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 297-299
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:
Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
Autorzy:
Dobaczewski, L.
Kamiński, P.
Kozłowski, R.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933733.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 703-706
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method
Autorzy:
Dussan, A.
Schmidt, J.
Koropecki, R.
Powiązania:
https://bibliotekanauki.pl/articles/1207505.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
73.61.Ga
61.72.uf
Opis:
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane $(SiH_4)$ diluted in hydrogen, and diborane $(B_2H_6)$ as a dopant gas. The concentration of $B_2H_6$ in $SiH_4$ was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the $μ_{n}τ_{n}$ product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 174-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistance in n-Si/$SiO_2$/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
Autorzy:
Fedotova, J.
Ivanou, D.
Ivanova, Y.
Fedotov, A.
Mazanik, A.
Svito, I.
Streltsov, E.
Saad, A.
Tyutyunnikov, S.
Kołtunowicz, T.
Demyanov, S.
Fedotova, V.
Powiązania:
https://bibliotekanauki.pl/articles/1504014.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
81.05.Rm
73.22.-f
73.50.Jt
Opis:
A study of magnetotransport in the n-Si/$SiO_2$/Ni nanostructures with granular Ni nanorods in $SiO_2$ pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/$SiO_2$/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 133-135
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected Cyclotron Resonance Studies of CdMnTe/CdTe Multiquantum Wells and CdMgTe/CdMnTe Superlattices
Autorzy:
Godlewski, M.
Świątek, K.
Harris, C. I.
Bergman, J. P.
Monemar, B.
Waag, A.
Powiązania:
https://bibliotekanauki.pl/articles/1932082.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+ρ
76.70.Hb
68.55.Ln
71.35.+z
Opis:
The results of photoluminescence, time resolved photoluminescence (decay times), optically detected cyclotron and magnetic resonances investigations of CdMnTe/CdTe multiquantum wells and CdMgTe/CdMnTe super-lattices are presented. The role of defects and quantum well width fluctuations in recombination processes of 2D carriers is discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 213-216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics of Ba-Doped PbS Thin Films Prepared by the SILAR Method
Autorzy:
Gülen, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1205230.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.05.cp
68.55.Ln
Opis:
In this material production research, undoped and Ba-doped nanostructured PbS films are fabricated on glass surfaces by SILAR method. The structural, optical and morphological properties of the films are examined via scanning electron microscopy, UV-vis spectrophotometry and X-ray diffraction analysis. Scanning electron microscopy analysis revealed that Ba-doping concentration influences the size of the thin film's nanoparticles. X-ray diffraction results showed that all of the thin films are in a face centered cubic structure. Optical studies, in the room temperature, revealed that the optical band gap of the films increases as Ba-doping concentration is increased. The intercept values on the energy axis in the range of 1.86 eV and 2.12 eV for 1% and 8% Ba-doped PbS films respectively. As a result, it is concluded that the structural, optical and morphological properties of the fabricated thin films are directly depend on the Ba doping ratio.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 763-767
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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